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    TP20N Search Results

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    TP20N Price and Stock

    STMicroelectronics STP20NM50FD

    MOSFET N-CH 500V 20A TO220AB
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    DigiKey STP20NM50FD Tube 992 1
    • 1 $5.68
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    Mouser Electronics STP20NM50FD 917
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    Newark STP20NM50FD Bulk 1
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    STMicroelectronics STP20NM50FD 917 1
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    TME STP20NM50FD 112 1
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    Component Electronics, Inc STP20NM50FD 4
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    EBV Elektronik STP20NM50FD 550 14 Weeks 50
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    STMicroelectronics STP20NM60FD

    MOSFET N-CH 600V 20A TO220AB
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    DigiKey STP20NM60FD Tube 945 1
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    Avnet Americas STP20NM60FD Bulk 19 Weeks, 4 Days 1
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    Mouser Electronics STP20NM60FD 1,633
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    Newark STP20NM60FD Bulk 490 1
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    STMicroelectronics STP20NM60FD 1,633 1
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    TME STP20NM60FD 108 1
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    STMicroelectronics STP20N65M5

    MOSFET N-CH 650V 18A TO220
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    DigiKey STP20N65M5 Tube 939 1
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    Avnet Americas STP20N65M5 Bulk 16 Weeks, 3 Days 1
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    Mouser Electronics STP20N65M5 746
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    STMicroelectronics STP20N65M5 746 1
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    Avnet Silica STP20N65M5 3,900 15 Weeks 50
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    STMicroelectronics STP20NK50Z

    MOSFET N-CH 500V 17A TO220AB
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    DigiKey STP20NK50Z Tube 929 1
    • 1 $5.83
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    Mouser Electronics STP20NK50Z 1,992
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    STMicroelectronics STP20NK50Z 1,992 1
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    STMicroelectronics STP20N95K5

    MOSFET N-CH 950V 17.5A TO220-3
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    DigiKey STP20N95K5 Tube 886 1
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    Mouser Electronics STP20N95K5 4,187
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    EBV Elektronik STP20N95K5 38,750 15 Weeks 50
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    Win Source Electronics STP20N95K5 7,000
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    Find more TP20N price and stock on Findchips.com

    TP20N Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: ¿57 TYP E TP20N 10L S TP20N10LFI SGS-THOMSON ¡m era « TP20N10L TP20N10LFI N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR V dss RDS on Id 100 V 100 V < 0.12 a < 0.12 a 20 A 12 A • TYPICAL RDS(on) = 0.09 Q . . AVALANCHE RUGGED TECHNOLOGY


    OCR Scan     		PDF STP20N TP20N10LFI STP20N10L STP20N10LFI ISOWATT220

    Untitled

    Abstract: No abstract text available
    Text: ¿57 S G S -T H O M S O N ¡m e ra « S T P 20 N06 s t p 2 0 N 0 6 FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYP E TP20N06 S TP20N06FI V dss RDS on Id 60 V 60 V < 0 .085 Q. < 0 .085 Q. 20 A 13 A • TYPICAL RDS(on) = 0.06 Q . . AVALANCHE RUGGED TECHNOLOGY


    OCR Scan     		PDF STP20N06 TP20N06FI STP20N06/FI ISQWATT220

    20N10L

    Abstract: TP20N IO832
    Text: TP20N10L TP20N10LFI SCS-THOMSON E T / in e N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR PRELIMINARY DATA TYPE STP 20N 10L S TP20N 10LFI . • . ■ . . . V dss R dsíoü Id 100 V 100 V 0 .1 2 n 0 .1 2 a 20 A 12 A AVALANCHE RUGGEDNESS TECHNOLOGY


    OCR Scan     		PDF STP20N10L STP20N10LFI TP20N 10LFI O-220 ISOWATT220 STP20N STP20N1 20N10L IO832

    irf530

    Abstract: IRF130 tr irf530 20n10 20N08 MTP20N10 MTP20N08 IRF131 IRF132 IRF133
    Text: _ _ _ _ _ F A jR C H i^ IRF130-133/IRF530-533 T - ! ? -" M TP20N08/20N10 / 39/ N-Channel Power MOSFETs, 20 A, 60-100 V A Schlumberger Company Power And Discrete Division_ _ _ Description These devices are n-channei, enhancement mode, power


    OCR Scan     		PDF IRF130-133/IRF530-533JjlHTÃ MTP20N08/20N10 IRF130 IRF130-133 IRF530-533 MTP20N08/20N10 PC10021F IRF130-133/IRF530-533 T-39-11 irf530 tr irf530 20n10 20N08 MTP20N10 MTP20N08 IRF131 IRF132 IRF133

    TP20N

    Abstract: No abstract text available
    Text: MOT OR OL A SC CXSTRS/R 4bE F MOTOROLA • SEMICONDUCTOR D ■ b3b?254 00^3251 Order this data sheet by TP20N06/D 2 «flO Tb _ ^ 3 f - / TECHNICAL DATA Designer's Data Sheet M TP20N 06 Pow er M OSFET N-Channel Enhancement-Mode Silicon Gate


    OCR Scan     		PDF MTP20N06/D TP20N O-220AB MTP20N06

    TP20N

    Abstract: No abstract text available
    Text: *57 SGS-THOMSON s t p 2 on o6 ilLiCTIKMDe TP20N 06FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE TP20N 06 S TP20N 06FI • • . ■ ■ . ■ ■ V dss R DS on Id 60 V 60 V < 0.085 a < 0.085 a 20 A 13 A T Y P IC A L RDS(on) = 0.06 Q A V A LA N C H E R U G G ED T E C H N O LO G Y


    OCR Scan     		PDF STP20N TP20N

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA O rder this docum ent by M TP20N06V/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M TP20N06V TMOS V™ Pow er Field E ffect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS V is a new technology designed to achieve an on-resistance area product about one-half that of standard MOSFETs. This


    OCR Scan     		PDF TP20N06V/D TP20N06V 21A-06

    GCS1520

    Abstract: C8156 20NE06FP TP20N E06FP STP20NE06L
    Text: TP20NE06L TP20NE06LFP N - CHANNEL 60V - 0.06 Q - 20A TO-220/TO-220FP STripFET POWER MOSFET TYPE V dss R D S on Id TP20N E06L S TP20N E06LFP 60 V 60 V < 0 .0 7 Q. < 0 .0 7 Q, 20 A 13 A • . . . . TYPICAL RDS(on) = 0.06 £2 EXCEPTIONAL dv/dt CAPABILITY


    OCR Scan     		PDF STP20NE06L STP20NE06LFP O-220/TO-220FP STP20N TP20N E06LFP GCS1520 C8156 20NE06FP E06FP

    IGT4E10

    Abstract: 2N6976 THOMSON 58E THOMSON DISTRIBUTOR THOMSON DISTRIBUTOR 58e d 2N6975 2N6977 IGTH10N40 IGTH20N40 IGTH20N40A
    Text: THOMSO N/ DISTRIBUTOR SflE D TCSK ^□2 b ñ7 3 □0 QS 714 Insulated-Gate Bipolar Transistors IGBTs N-Channel Enhancement-Mode Conductivity Modulated Power Field-Effect Transistors—IGBTs Optimized for Switching Applications Package M axim um Ratings BV c e s


    OCR Scan     		PDF 0QS714 O-204AA O-218AC O-220AB 2N6975 2N6977 IGTM10N40 IGTM10N40A IGTM20N40 IGTM20N40A IGT4E10 2N6976 THOMSON 58E THOMSON DISTRIBUTOR THOMSON DISTRIBUTOR 58e d 2N6975 2N6977 IGTH10N40 IGTH20N40 IGTH20N40A

    MTP8N10

    Abstract: mtp7n06 mtp12n10 MTP7N15 power mosfets to 204aa MTP5N15 mtp25n10 MTP12P08 MTP3N15 MTH8P20
    Text: POWER TRANSISTORS — TMOS continued V b R(DSS) (Volt*) Min (Ohms) Max (Amp) 500 6 3 DS(on) @ >D Device 450 M TM 2P50 >D(Contl (Amp) Max PD @ TC = 25-C (Watts) Max Package 2 75 2 04AA M TP2P50 220AB M TM 2P45 204AA 220A8 M T P 2P45 200 0.7 4 M TM 8P20 1


    OCR Scan     		PDF O-218 O-22QAB MTM2P50 204AA MTP2P50 220AB MTM2P45 MTP2P45 MTP8N10 mtp7n06 mtp12n10 MTP7N15 power mosfets to 204aa MTP5N15 mtp25n10 MTP12P08 MTP3N15 MTH8P20

    TDA0161 equivalent

    Abstract: 1N3393 BDX54F equivalent byt301000 bux transient voltage suppressor ST90R9 ua776mh sgs 2n3055 Transistor morocco mje13007 inmos transputer reference manual
    Text: SHORTFORM 1995 NOVEMBER 1994 USE IN LIFE SUPPORT DEVICES OR SYSTEMS MUST BE EXPRESSLY AUTHORIZED SGS-THOMSON PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF SGS-THOMSON Microelectronics. As used herein:


    OCR Scan     		PDF

    EATON CM20A

    Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
    Text: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main


    OCR Scan     		PDF

    MFE9200

    Abstract: BUZ84A BUZ90 equivalent IRF150 MOSFET AMP circuit BUZ35S MTP40N06M IRFZ22 mosfet 1RF620 MTM12N10L MTP25N10E
    Text: MOTOROLA SC XSTRS/R IM E F D | b3b?254 O O fl'ìB n 1 | Selection by Package by contacting a Motorola sale office In your area or by con­ tacting a Motorola Literature Distribution Center listed on the back cover. Order the disk by requesting DK101/D. The product listed in Tables t through 22 have been com­


    OCR Scan     		PDF DK101/D. O-22QI 0020-H MFE9200 BUZ84A BUZ90 equivalent IRF150 MOSFET AMP circuit BUZ35S MTP40N06M IRFZ22 mosfet 1RF620 MTM12N10L MTP25N10E

    HG20N60B3

    Abstract: hG20N60 hg20n60b3 equivalent HG20N60B G20N60B3 hg*20n60 g20n60 vqe 24 d HGTG20N60B3 G20N60B
    Text: interrii HGT1S20N60B3S, TP20N60B3, HGTG20N60B3 J a n u a ry . m Data Sheet 40A, 600V, UFS Series N-Channel IGBTs The HGT1S20N60B3S, the TP20N60B3 and the HGTG20N60B3 are Generation III MOS gated high voltage switching devices combining the best features of MOSFETs


    OCR Scan     		PDF HGT1S20N60B3S, HGTP20N60B3, HGTG20N60B3 HGTP20N60B3 HGTG20N60B3 HG20N60B3 hG20N60 hg20n60b3 equivalent HG20N60B G20N60B3 hg*20n60 g20n60 vqe 24 d G20N60B

    TP8N10

    Abstract: th15n20 TH7N50 TP4N10 TP10N05 IRFP350FI TP5N35 tp5n40 TP4N45 TP3N40
    Text: CROSS REFERENCE INDUSTRY STANDARD SGS-THOMSON NEAREST PAGE INDUSTRY STANDARD SGS-THOMSON 2SK295 2SK296 2SK308 2SK310 2SK311 SGSP351 IRF723 IRF142 IRF722 IRF833 499 307 261 307 331 BUZ11A BUZ11FI BUZ11P BUZ11S2 BUZ11S2FI BUZ11A BUZ11FI BUZ11FI BUZ11S2 BUZ11S2FI


    OCR Scan     		PDF 2SK295 2SK296 2SK308 2SK310 2SK311 2SK312 2SK313 2SK319 2SK320 2SK324 TP8N10 th15n20 TH7N50 TP4N10 TP10N05 IRFP350FI TP5N35 tp5n40 TP4N45 TP3N40

    20N15

    Abstract: 35n05 mje13002 to92 ur3060 AN803 motorola 2N6823 isolated dc-dc mc34063 mje12007 Motorola Switchmode 1 special
    Text: C O N TE N TS Page What Everyone Should Know About Switching Power Supplies In tro du ctio n. Comparison w ith Linear Regulations.


    OCR Scan     		PDF

    IRFD1Z3 equivalent

    Abstract: 8N60 equivalent TP8N20 TP8N10 siemens semiconductor manual What is comparable with IRF 3205 2N6823 irf8408 MTM5N90 designers datasheet smps cook circuit
    Text: The information in this book has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. Motorola reserves the right to make changes with­ out further notice to any products herein to improve reliability, function or design. Motorola does not


    OCR Scan     		PDF VP1204N TP8P08 5001D VP1206N 1208N 5002D 1209N VP1209N IRFD1Z3 equivalent 8N60 equivalent TP8N20 TP8N10 siemens semiconductor manual What is comparable with IRF 3205 2N6823 irf8408 MTM5N90 designers datasheet smps cook circuit

    Cross Reference power MOSFET

    Abstract: irf 3502 mosfet SD500KD irf3203 mosfet irf equivalent book sem 2106 inverter diagram IFR822 Diode BYW 56 BUZ41 equivalent transistor f630
    Text: FAIRCH ILD Power Products Data Book FA IR C H ILD Power Data Book A S chlum berger C om pany 1 9 86/8 7 Power and Discrete Division 1986 Fairchild Semiconductor Corporation Power and Discrete Division 4300 Redwood Highway, San Rafael, CA 94903 415 479-8000 TWX 910-384-4258


    OCR Scan     		PDF T0-204AA T0-204AE T0-220AB T0-220AC Cross Reference power MOSFET irf 3502 mosfet SD500KD irf3203 mosfet irf equivalent book sem 2106 inverter diagram IFR822 Diode BYW 56 BUZ41 equivalent transistor f630

    MTM13N50E

    Abstract: P40N10 24N40 p50n05 8n50e Power MOSFET Cross Reference Guide motorola 20n50e TP50N05E IRF510 mosfet irf640 33N10E
    Text: ir tmos Cross-Reference The follow ing table represents a cro ss-re fe re n ce guide for all T M O S P ow er M O SFETs w hich are m an ufacture d directly by M otorola. W here the M otorola part nu m be r differs from the Industry part num ber, the M otorola de vice is a “form , fit and fu n ctio n ”


    OCR Scan     		PDF BUZ10 BUZ11 BUZ11A BUZ11S2 BUZ15 BUZ171 BUZ20 BUZ21 BUZ23 BUZ31 MTM13N50E P40N10 24N40 p50n05 8n50e Power MOSFET Cross Reference Guide motorola 20n50e TP50N05E IRF510 mosfet irf640 33N10E

    MTP8N10

    Abstract: MTP25N10 mtp7n06 MTP20N10 MTP7N15 irf510 MTP12N10 MTP5N06 MTP5N15 MTP20N08
    Text: POWER TRAN SISTO RS — T M O S PLASTIC continued Plastic TM OS Power MOSFETS — TO-220AB (continued) C A S E 221A -02 rD S(on) (Ohm s) M ax (Amp) 150 2.4 1.25 20 2.5 1.5 MTP3N15 3 50 2.5 IRF623 4 40 0.9 MTP5N15 5 50 0.8 IRF621 4 40 75 0.7 3.5 M TP7N15


    OCR Scan     		PDF O-220AB 21A-02 IRF613 IRF611 MTP3N15 IRF623 MTP5N15 IRF621 MTP7N15 IRF633 MTP8N10 MTP25N10 mtp7n06 MTP20N10 irf510 MTP12N10 MTP5N06 MTP20N08

    UC3828

    Abstract: UNITRODE applications handbook flux walking UC2828 UC1828 U147 UR3020W DN-55 power supply with uc3842 TP20N U-147
    Text: IN T E G R A T E D C IR C U IT S U N IT R O D E Current Mode PWM Controller 1C UC1828 UC2828 UC3828 ADVANCED INFORMATION FEATURES DESCRIPTION • 7.5V - 65V Operating Range • Programmable Duty Cycle Clamp The UC1828 family of PW M controllers builds upon the features offered in the


    OCR Scan     		PDF 200nA UC1828 UC2828 UC3828 UC1842 DN-55 U-147 UC3828 UC3842 UNITRODE applications handbook flux walking U147 UR3020W DN-55 power supply with uc3842 TP20N U-147

    Untitled

    Abstract: No abstract text available
    Text: ïfA R m S HGTG20N60C3, TP20N60C3, HGT1S20N60C3, HGT1S20N60C3S Data Sheet May 1999 45A, 600V, UFS Series N-Channel IGBT This family of MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of


    OCR Scan     		PDF HGTG20N60C3, HGTP20N60C3, HGT1S20N60C3, HGT1S20N60C3S 108ns

    mtm20n10

    Abstract: MTP20N10 TP20N
    Text: MOTOROLA SC XSTRS/R 14'E D I F b3b?S54 QDTQQflS ? | MOTOROLA • SEMICONDUCTOR TECHNICAL DATA MTM20N10 TP20N08 TP20N10 Designer's Data Sheet P o w e r Field E ffe c t T ra n sisto r N-Channel Enhancement-Mode Silicon Gate TMOS TM O S PO W ER F ET s 20 A M P E R E S


    OCR Scan     		PDF T01E3ANOE TQ-204AA 21A-04 TQ-220AB mtm20n10 MTP20N10 TP20N

    transistor TE 901 equivalent

    Abstract: bd 743 transistor
    Text: TP20N60B3 f f t H A R R IS U V S E M I C O N D U C T O R 40A, 600V, UFS Series N-Channel IGBT Features 40A, 600V at T c = +25°C Square Switching SOA Capability Typical Fall Tim e - 140ns at +150°C Short Circuit Rated Low Conduction Loss Description The TP20N60B3 is a MOS gated high voltage switching


    OCR Scan     		PDF HGTP20N60B3 140ns HGTP20N60B3 transistor TE 901 equivalent bd 743 transistor