DAC7512
Abstract: No abstract text available
Text: DAC7512 DAC 751 2 DAC 7512 SBAS156B – JULY 2002 Low-Power, Rail-to-Rail Output, 12-Bit Serial Input DIGITAL-TO-ANALOG CONVERTER FEATURES DESCRIPTION ● microPOWER OPERATION: 135µA at 5V ● POWER-DOWN: 200nA at 5V, 50nA at 3V ● POWER SUPPLY: +2.7V to +5.5V
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DAC7512
SBAS156B
12-Bit
200nA
OT23-6
DAC7512
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marking code D3 SOT23-6 DAC
Abstract: d12n marking DAC7512 D12N DAC7512E DAC7512N
Text: DAC7512 DAC 751 2 DAC 7512 SBAS156B – JULY 2002 Low-Power, Rail-to-Rail Output, 12-Bit Serial Input DIGITAL-TO-ANALOG CONVERTER FEATURES DESCRIPTION ● microPOWER OPERATION: 135µA at 5V ● POWER-DOWN: 200nA at 5V, 50nA at 3V ● POWER SUPPLY: +2.7V to +5.5V
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DAC7512
SBAS156B
12-Bit
200nA
OT23-6
DAC7512
DAC75reproduction
marking code D3 SOT23-6 DAC
d12n marking
D12N
DAC7512E
DAC7512N
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Bosch diode
Abstract: Bosch BD5024 BD5020 Diode pressfit
Text: BD5020 & BD5024 WTE POWER SEMICONDUCTORS Pb 50A AVALANCHE BOSCH TYPE PRESS-FIT DIODE Features Diffused Junction Low Leakage Low Cost High Surge Current Capability Typical IR less than 200nA Anode + C Mechanical Data D Case: 13mm Bosch Type Press-Fit Terminals: Contact Areas Readily Solderable
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BD5020
BD5024
200nA
BD5020R
BD5024R)
Bosch diode
Bosch
BD5024
BD5020
Diode pressfit
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mx29lv320ttc
Abstract: MX29LV320T Q0-Q15 SA10
Text: MX29LV320T/B 32M-BIT [4M x 8 / 2M x 16] SINGLE VOLTAGE 3V ONLY FLASH MEMORY FEATURES • Low Power Consumption - Low active read current: 10mA typical at 5MHz - Low standby current: 200nA (typical) • Minimum 100,000 erase/program cycle • 10-year data retention
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MX29LV320T/B
32M-BIT
200nA
10-year
64K-Byte
FEB/10/2003
MAR/26/2003
APR/23/2003
JUL/04/2003
mx29lv320ttc
MX29LV320T
Q0-Q15
SA10
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100nf chip cap
Abstract: DIL-16 SOIC-16 SSOP-16 UCC5343
Text: UCC5343 PRELIMINARY IrDA Transceiver with Encoder/Decoder FEATURES • Micropower in the Sleep Mode, 2µA • 3V to 5V Operation • Wide Dynamic Receiver Range from 200nA to 50mA Typical • Direct Interface to IrDA Compatible UARTs or Super I/O ICs •
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UCC5343
200nA
500mA
UCC5343
100nf chip cap
DIL-16
SOIC-16
SSOP-16
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MX29LV033
Abstract: No abstract text available
Text: ADVANCED INFORMATION MX29LV033A 32M-BIT [4M x 8] CMOS EQUAL SECTOR FLASH MEMORY FEATURES • Low Power Consumption - Low active read current: 10mA typical at 5MHz - Low standby current: 200nA (typical) • Minimum 100,000 erase/program cycle • 10-year data retention
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MX29LV033A
32M-BIT
200nA
10-year
PM1017
OCT/06/2003
MX29LV033
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DAC7512
Abstract: marking code 10 sot23 NATIONAL SEMICONDUCTOR MARKING CODE sot D12N DAC7512E DAC7512N D12e d12n marking
Text: DAC7512 DAC 751 2 DAC 7512 SBAS156B – JULY 2002 Low-Power, Rail-to-Rail Output, 12-Bit Serial Input DIGITAL-TO-ANALOG CONVERTER FEATURES DESCRIPTION ● microPOWER OPERATION: 135µA at 5V ● POWER-DOWN: 200nA at 5V, 50nA at 3V ● POWER SUPPLY: +2.7V to +5.5V
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DAC7512
SBAS156B
12-Bit
200nA
OT23-6
DAC7512
DAC75plifiers
marking code 10 sot23
NATIONAL SEMICONDUCTOR MARKING CODE sot
D12N
DAC7512E
DAC7512N
D12e
d12n marking
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DAC7512
Abstract: dac interfacing with 8051 microcontroller marking 332 sot23-6 400H DAC7512E
Text: DAC7512 DAC 751 2 DAC 751 2 www.ti.com Low-Power, Rail-to-Rail Output, 12-Bit Serial Input DIGITAL-TO-ANALOG CONVERTER FEATURES DESCRIPTION ● microPOWER OPERATION: 135µA at 5V ● POWER-DOWN: 200nA at 5V, 50nA at 3V ● POWER SUPPLY: +2.7V to +5.5V ● GUARANTEED MONOTONIC BY DESIGN
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DAC7512
12-Bit
200nA
OT23-6
DAC7512
DAC751customer
dac interfacing with 8051 microcontroller
marking 332 sot23-6
400H
DAC7512E
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BD5024
Abstract: Bosch BD5020
Text: BD5020 & BD5024 WTE POWER SEMICONDUCTORS Pb 50A AVALANCHE BOSCH TYPE PRESS-FIT DIODE Features ! Diffused Junction ! Low Leakage ! Low Cost ! High Surge Current Capability ! Typical IR less than 200nA Mechanical Data
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BD5020
BD5024
200nA
BD5020R
BD5024R)
BD5024
Bosch
BD5020
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MD3520
Abstract: MD3524 a 770
Text: MD3520 & MD3524 WTE POWER SEMICONDUCTORS Pb 35A AVALANCHE MOTOROLA TYPE PRESS-FIT DIODE Features ! Diffused Junction ! Low Leakage ! Low Cost ! High Surge Current Capability ! Typical IR less than 200nA
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MD3520
MD3524
200nA
MD3520R
MD3524R)
MD3520
MD3524
a 770
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DAC7512
Abstract: No abstract text available
Text: DAC7512 DAC 751 2 DAC 7512 SBAS156B – JULY 2002 Low-Power, Rail-to-Rail Output, 12-Bit Serial Input DIGITAL-TO-ANALOG CONVERTER FEATURES DESCRIPTION ● microPOWER OPERATION: 135µA at 5V ● POWER-DOWN: 200nA at 5V, 50nA at 3V ● POWER SUPPLY: +2.7V to +5.5V
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DAC7512
SBAS156B
12-Bit
200nA
OT23-6
DAC7512
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Untitled
Abstract: No abstract text available
Text: MD3520 & MD3524 WTE POWER SEMICONDUCTORS Pb 35A AVALANCHE MOTOROLA TYPE PRESS-FIT DIODE Features ! Diffused Junction ! Low Leakage ! Low Cost ! High Surge Current Capability ! Typical IR less than 200nA
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MD3520
MD3524
200nA
MD3520R
MD3524R)
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Untitled
Abstract: No abstract text available
Text: R MX29LV320AT/B 32M-BIT [4M x 8 / 2M x 16] SINGLE VOLTAGE 3V ONLY FLASH MEMORY FEATURES • Low Power Consumption - Low active read current: 10mA typical at 5MHz - Low standby current: 200nA (typical) • Minimum 100,000 erase/program cycle • 10 years data retention
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MX29LV320AT/B
32M-BIT
200nA
64K-Byte
PM1008
JAN/30/2004
MAY/28/2004
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Untitled
Abstract: No abstract text available
Text: LD3520, LD3524, LD3536 35A AVALANCHE LUCAS TYPE PRESS-FIT DIODE WON-TOP ELECTRONICS Pb Features Diffused Junction Low Leakage Low Cost High Surge Current Capability Typical IR less than 200nA Anode + C Mechanical Data E D
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LD3520,
LD3524,
LD3536
200nA
LD3520R
LD3524R)
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marking code 5H diode
Abstract: No abstract text available
Text: MMDL707 Schottky Barrier Diode SOD-323 Features Low reverse leakage—IR=200nA Max. . Very Low Capacitance—1.0pF @20V. Extremely Low minority carrier lifetime. High reverse leakage—70V(min.) Dimensions in inches and (millimeters) Applications
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MMDL707
OD-323
200nA
leakage--70V
MMDL770
marking code 5H diode
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Untitled
Abstract: No abstract text available
Text: LD2520 & LD2524 WTE POWER SEMICONDUCTORS Pb 25A AVALANCHE LUCAS TYPE PRESS-FIT DIODE Features ! Diffused Junction ! Low Leakage ! Low Cost ! High Surge Current Capability ! Typical IR less than 200nA C
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LD2520
LD2524
200nA
LD2520R
LD2524R)
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Untitled
Abstract: No abstract text available
Text: BD5020 & BD5024 WTE POWER SEMICONDUCTORS Pb 50A AVALANCHE BOSCH TYPE PRESS-FIT DIODE Features Diffused Junction Low Leakage Low Cost High Surge Current Capability Typical IR less than 200nA Anode + C Mechanical Data D Case: 13mm Bosch Type Press-Fit Terminals: Contact Areas Readily Solderable
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BD5020
BD5024
200nA
BD5020R
BD5024R)
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Untitled
Abstract: No abstract text available
Text: ADVANCED INFORMATION MX29LV320T/B 32M-BIT [4M x 8 / 2M x 16] SINGLE VOLTAGE 3V ONLY FLASH MEMORY FEATURES • Low Power Consumption - Low active read current: 10mA typical at 5MHz - Low standby current: 200nA (typical) • Minimum 100,000 erase/program cycle
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MX29LV320T/B
32M-BIT
64K-Byte
250mAAR/21/2002
PM0742
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SD101AWS
Abstract: SD101BWS SD101CWS
Text: Product Catalog > Diodes > Small Signal Schottky Diodes > Part Number SD101BWS product family SMALL SIGNAL SCHOTTKY DIODES package type SOD-323 VRM PRV 50V Ifsm 2.0A IF(AV) @Vf 0.40V @If 1mA Trr 1.0nS IR 200nA @VR 50V Package Qty Tape : 3K/Reel , 120K/Ctn;
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SD101BWS
OD-323
200nA
120K/Ctn;
SD101AWS
SD101CWS
SD101AWS
SD101BWS
SD101CWS
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BAS40
Abstract: BAS40-04 BAS40-05 BAS40-06 BAS70 BAS70-04 BAS70-05 BAS70-06
Text: Product Catalog > Diodes > Small Signal Schottky Diodes > Part Number BAS40-05 product family SMALL SIGNAL SCHOTTKY DIODES package type SOT-23 VRM PRV 40V Ifsm 600mA IF(AV) 200mA @Vf 1V @If 40mA Trr 5nS IR 200nA @VR 30V Package Qty Tape : 3K/Reel, 120K/Ctn;
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BAS40-05
OT-23
600mA
200mA
200nA
120K/Ctn;
BAS40
BAS70
OT-23
BAS40
BAS40-04
BAS40-05
BAS40-06
BAS70
BAS70-04
BAS70-05
BAS70-06
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SD101AW
Abstract: SD101BW SD101CW
Text: Product Catalog > Diodes > Small Signal Schottky Diodes > Part Number SD101BW product family SMALL SIGNAL SCHOTTKY DIODES package type SOD-123 VRM PRV 50V Ifsm 2.0A IF(AV) @Vf 0.40V @If 1mA Trr 1.0nS IR 200nA @VR 50V Package Qty Tape : 3K/Reel , 120K/Ctn;
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SD101BW
OD-123
200nA
120K/Ctn;
SD101AW
SD101CW
SD101AW
SD101CW
SD101BW
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dac7512
Abstract: fsr 12.5
Text: DAC7512 DAC 751 2 DAC 7512 SBAS156B – JULY 2002 Low-Power, Rail-to-Rail Output, 12-Bit Serial Input DIGITAL-TO-ANALOG CONVERTER FEATURES DESCRIPTION ● microPOWER OPERATION: 135µA at 5V ● POWER-DOWN: 200nA at 5V, 50nA at 3V ● POWER SUPPLY: +2.7V to +5.5V
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DAC7512
SBAS156B
12-Bit
200nA
OT23-6
DAC7512
fsr 12.5
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5101ab
Abstract: ic 5101 ram 5101 cmos ram L21S
Text: in t e i M5101-4, M5101L-4 256 x 4 BIT STATIC CMOS RAM Single +5V Power Supply Military Temperature Range: -55° C to +125° C Ultra Low Standby Current: 200nA/Bit C E 2 Controls Unconditional Standby Mode Fast Access Time — 800ns Three-State Output T h e Intel M 5101 is an u ltra -lo w p o w er 2 5 6 X 4 C M O S R A M sp e cifie d over th e - 5 5 ° C to + 1 2 5 °C tem p e ra tu re range. T h e R A M
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OCR Scan
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M5101-4,
M5101L-4
200nA/Bit
800ns
M5101L-4
5101ab
ic 5101 ram
5101 cmos ram
L21S
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MC33172
Abstract: MC33172N MC35172
Text: r^ J SG S -T H O M S O N MgœiUKgTOIiîDtg MC33172 - MC35172 LOW POWER DUAL BIPOLAR OPERATIONAL AMPLIFIERS . GOOD CONSUMPTION/SPEED RATIO : ONLY 200nA/Amp FOR 2.1 MHz, 2 V/|iS • SINGLE OR DUAL SUPPLY OPERATION FROM +4V TO +44V (±2V TO ±22V) . WIDE INPUT COMMON MODE VOLTAGE
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OCR Scan
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MC33172
MC35172
100mV
200nA/Amp)
7TET237
MC33172N
MC35172
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