sono2
Abstract: mosfet 600V 10A ic
Text: MITSUBISHI Neh POWER MOSFET FK10KM-12 HIGH-SPEED SWITCHING USE FK1OKM-12 • Voss . 600V • rDS ON (MAX) .1.18Í2 • Id . 10A
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FK10KM-12
FK1OKM-12
150ns
UJ10l/l
sono2
mosfet 600V 10A ic
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Mosfet
Abstract: SSF10N60
Text: SSF10N60 600V N-Channel MOSFET Main Product Characteristics VDSS 600V RDS on 0.69Ω (typ.) ID 10A TO-220 Schematic Diagram Assignment Features and Benefits Marking and Pin Advanced MOSFET process technology Special designed for PWM, load switching and
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SSF10N60
O-220
inN60
Mosfet
SSF10N60
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F11NM60N
Abstract: f11nm60 p11nm60 JESD97 STD11NM60N STD11NM60N-1 STF11NM60N STP11NM60N f11n
Text: STD11NM60N - STD11NM60N-1 STP11NM60N - STF11NM60N N-channel 600V - 0.37Ω - 10A - TO-220 - TO-220FP- IPAK - DPAK Second generation MDmesh Power MOSFET General features Type VDSS @Tjmax RDS(on) ID 3 2 1 3 STD11NM60N 650V <0.45Ω 10A STD11NM60N-1 650V
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STD11NM60N
STD11NM60N-1
STP11NM60N
STF11NM60N
O-220
O-220FP-
STD11NM60N
STP11NM60N
F11NM60N
f11nm60
p11nm60
JESD97
STD11NM60N-1
STF11NM60N
f11n
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p10nk60
Abstract: p10nk60z p10nk60zfp B10n STP10NK60ZFP
Text: STB10NK60Z/-1- STP10NK60Z STP10NK60ZFP - STW10NK60Z N-channel 600V - 0.65Ω - 10A - I2/D2PAK - TO-220/FP - TO-247 Zener-protected SuperMESH Power MOSFET General features Type VDSS @T jMax RDS on ID Pw STB10NK60Z-1 650V <0.75Ω 10A 115W STB10NK60Z 650V
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STB10NK60Z/-1-
STP10NK60Z
STP10NK60ZFP
STW10NK60Z
O-220/FP
O-247
STB10NK60Z-1
STB10NK60Z
p10nk60
p10nk60z
p10nk60zfp
B10n
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p10nk60
Abstract: p10nk60zfp VDD-300 STP10NK60ZFP B10NK B10n W10NK60Z B10NK60Z p10nk STB10NK60Z
Text: STB10NK60Z/-1- STP10NK60Z STP10NK60ZFP - STW10NK60Z N-channel 600V - 0.65Ω - 10A - I2/D2PAK - TO-220/FP - TO-247 Zener-protected SuperMESH Power MOSFET General features Type VDSS @TjMax RDS on ID Pw STB10NK60Z-1 650V <0.75Ω 10A 115W STB10NK60Z 650V
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STB10NK60Z/-1-
STP10NK60Z
STP10NK60ZFP
STW10NK60Z
O-220/FP
O-247
STB10NK60Z-1
STB10NK60Z
STP10NK60ZFP
p10nk60
p10nk60zfp
VDD-300
B10NK
B10n
W10NK60Z
B10NK60Z
p10nk
STB10NK60Z
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Mosfet
Abstract: SSF10N60F
Text: SSF10N60F 600V N-Channel MOSFET Main Product Characteristics VDSS 600V RDS on 0.8ohm(typ.) ID 10A TO220F Schematic Diagram Assignment Features and Benefits Marking and Pin Advanced trench MOSFET process technology Special designed for PWM, load switching and
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SSF10N60F
O220F
dev60F
Mosfet
SSF10N60F
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f11nm60
Abstract: F11NM60N p11nm60n STD11NM60N STD11NM60N-1 p11nm60 JESD97 STF11NM60N STP11NM60N
Text: STD11NM60N - STD11NM60N-1 STP11NM60N - STF11NM60N N-channel 600V - 0.37Ω - 10A - TO-220 - TO-220FP- IPAK - DPAK Second generation MDmesh Power MOSFET General features Type VDSS @Tjmax RDS(on) ID 3 2 1 3 STD11NM60N 650V <0.45Ω 10A STD11NM60N-1 650V
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STD11NM60N
STD11NM60N-1
STP11NM60N
STF11NM60N
O-220
O-220FP-
STD11NM60N
STP11NM60N
f11nm60
F11NM60N
p11nm60n
STD11NM60N-1
p11nm60
JESD97
STF11NM60N
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P12NM60
Abstract: F12NM60N STP12NM60N STP12NM60 STB12NM60N STB12NM60N-1 STF12NM60N STW12NM60N
Text: STB12NM60N/-1 - STF12NM60N STP12NM60N - STW12NM60N N-channel 600V - 0.35Ω - 10A - D2/I2PAK - TO-220/FP - TO-247 Second generation MDmesh Power MOSFET Features Type VDSS @Tjmax RDS(on) ID 3 3 12 1 STB12NM60N 650V < 0.41Ω 10A STB12NM60N-1 650V < 0.41Ω
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STB12NM60N/-1
STF12NM60N
STP12NM60N
STW12NM60N
O-220/FP
O-247
STB12NM60N
STB12NM60N-1
STP12NM60N
P12NM60
F12NM60N
STP12NM60
STB12NM60N
STB12NM60N-1
STF12NM60N
STW12NM60N
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P12NM60
Abstract: STP12NM60N
Text: STB12NM60N/-1 - STF12NM60N STP12NM60N - STW12NM60N N-channel 600V - 0.35Ω - 10A - D2/I2PAK - TO-220/FP - TO-247 Second generation MDmesh Power MOSFET Features Type VDSS @Tjmax RDS(on) ID 3 3 12 1 STB12NM60N 650V < 0.41Ω 10A STB12NM60N-1 650V < 0.41Ω
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STB12NM60N/-1
STF12NM60N
STP12NM60N
STW12NM60N
O-220/FP
O-247
STB12NM60N
STB12NM60N-1
P12NM60
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P12NM60
Abstract: F12NM60N STF12NM60N
Text: STB12NM60N/-1 - STF12NM60N STP12NM60N - STW12NM60N N-channel 600V - 0.35Ω - 10A - D2/I2PAK - TO-220/FP - TO-247 Second generation MDmesh Power MOSFET Features Type VDSS @Tjmax RDS(on) ID 3 3 12 1 STB12NM60N 650V < 0.41Ω 10A STB12NM60N-1 650V < 0.41Ω
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STB12NM60N/-1
STF12NM60N
STP12NM60N
STW12NM60N
O-220/FP
O-247
STB12NM60N
STB12NM60N-1
P12NM60
F12NM60N
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F12NM60N
Abstract: STP12NM60N STP12NM60 STB12NM60N STB12NM60N-1 STF12NM60N STW12NM60N
Text: STB12NM60N/-1 - STF12NM60N STP12NM60N - STW12NM60N N-channel 600V - 0.35Ω - 10A - D2/I2PAK - TO-220/FP - TO-247 Second generation MDmesh Power MOSFET Features Type VDSS @Tjmax RDS(on) ID 3 3 12 1 STB12NM60N 650V < 0.41Ω 10A STB12NM60N-1 650V < 0.41Ω
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STB12NM60N/-1
STF12NM60N
STP12NM60N
STW12NM60N
O-220/FP
O-247
STB12NM60N
STB12NM60N-1
STP12NM60N
F12NM60N
STP12NM60
STB12NM60N
STB12NM60N-1
STF12NM60N
STW12NM60N
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P12NM60
Abstract: No abstract text available
Text: STB12NM60N/-1 - STF12NM60N STP12NM60N - STW12NM60N N-channel 600V - 0.35Ω - 10A - D2/I2PAK - TO-220/FP - TO-247 Second generation MDmesh Power MOSFET Features Type VDSS @Tjmax RDS(on) ID 3 3 12 1 STB12NM60N 650V < 0.41Ω 10A STB12NM60N-1 650V < 0.41Ω
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STB12NM60N/-1
STF12NM60N
STP12NM60N
STW12NM60N
O-220/FP
O-247
STB12NM60N
STB12NM60N-1
STP12NM60N
P12NM60
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F10GZ47
Abstract: F10JZ47 SF-10
Text: SF10GZ47, SF10JZ47 TOSHIBA THYRISTOR SILICON PLANAR TYPE SF10GZ47, SF10JZ47 MEDIUM POWER CONTROL APPLICATIONS Unit: mm Repetitive Peak Off−State Voltage: VDRM = 400V,600V Repetitive Peak Reverse Voltage: VRRM = 400V,600V Average On−State Current: IT AV = 10A
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SF10GZ47,
SF10JZ47
SF10GZ47
SF10JZ47
F10GZ47
F10JZ47
SF-10
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TOSHIBA Thyristor
Abstract: SF10J41A SF10G41A f10g41
Text: SF10G41A, SF10J41A TOSHIBA THYRISTOR SILICON PLANAR TYPE SF10G41A, SF10J41A MEDIUM POWER CONTROL APPLICATIONS Unit: mm Repetitive Peak Off−State Voltage: VDRM = 400V,600V Repetitive Peak Reverse Voltage: VRRM = 400V,600V Average On−State Current: IT AV = 10A
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SF10G41A,
SF10J41A
SF10G41A
TOSHIBA Thyristor
SF10J41A
SF10G41A
f10g41
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MSK4105
Abstract: No abstract text available
Text: MIL-PRF-38534 & 38535 CERTIFIED FACILITY HIGH TEMPERATURE 600V/10A HERMETIC HALF BRIDGE 4105 FEATURES: Operational From -55°C to 190°C Half Bridge Configuration Silicon Carbide Power MOSFETS Silicon Carbide Recovery Diodes 600V Rated Voltage 20A Continuous Output Current at Tc=25°C
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MIL-PRF-38534
00V/10A
MIL-PRF-38534
MSK4105
MIL-PRF-38534,
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P10N60
Abstract: F10N60 10A600VRDS PJF10N60 PJP10N60
Text: PJP10N60 / PJF10N60 TO-220AB / ITO-220AB 600V N-Channel Enhancement Mode MOSFET FEATURES • 10A , 600V, RDS ON =1.0Ω@VGS=10V, ID=5.0A • • • • • • TO-220AB Low ON Resistance Fast Switching Low Gate Charge Fully Characterized Avalanche Voltage and Current
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PJP10N60
PJF10N60
O-220AB
ITO-220AB
O-220AB
2002/95/EC
ITO-220AB
MIL-STD-750
P10N60
F10N60
10A600VRDS
PJF10N60
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igbt 300V 10A
Abstract: 10A motor drive 6MBI10F-060 M604 AC Motor Servo Schematic 6mbi
Text: 6MBI10F-060 10A IGBT Module 600V / 10A 6 in one-package 外形寸法 Outline Drawings 特長 ：Features 特長： 低飽和電圧 Low Saturation Voltage 電圧駆動(MOSｹﾞｰﾄ構造）Voltage Drive 豊富な容量系列 Variety of Power Capacity Series
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6MBI10F-060
igbt 300V 10A
10A motor drive
6MBI10F-060
M604
AC Motor Servo Schematic
6mbi
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6MBI10L-060
Abstract: M604
Text: 6MBI10L-060 10A IGBT Module 600V / 10A 6 in one-package 外形寸法 Outline Drawings 特長 ：Features 特長： 高速ｽｲｯﾁﾝｸﾞ High speed switching 低飽和電圧 Low Saturation Voltage 高入力ｹﾞｰﾄ抵抗(MOS 構造） High Input Impedance
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6MBI10L-060
6MBI10L-060
M604
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AOTF10N60
Abstract: VA36 MOSFET 700V 10A AOTF10N6
Text: AOT10N60 / AOTF10N60 600V, 10A N-Channel MOSFET formerly engineering part number AOT9608/AOTF9608 General Description Features The AOT10N60 & AOTF10N60 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance
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AOT10N60
AOTF10N60
AOT9608/AOTF9608
AOT10N60
AOTF10N60
O-220
O-220F
VA36
MOSFET 700V 10A
AOTF10N6
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PDF
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10JL2CZ47A
Abstract: No abstract text available
Text: 10JL2CZ47A TOSHIBA HIGH EFFICIENCY DIODE STACK HED SILICON EPITAXIAL TYPE 10JL2CZ47A Unit: mm SWITCHING MODE POWER SUPPLY APPLICATION CONVERTER & CHOPPER APPLICATION Repetitive Peak Reverse Voltage : VRRM = 600V Average Output Rectified Current : IO = 10A
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10JL2CZ47A
10JL2CZ47A
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F10N60
Abstract: No abstract text available
Text: SDP/F10N60 Green Product S a mHop Microelectronics C orp. Preliminary 600V N-Channel Planar MOSFET FEATURES PRODUCT SUMMARY V DSS ID Fast Switching. R DS ON (m Ω) Max 100% Avalanche Rated. 600V 10A G D S 0.75 @ VGS=10V,ID=5A TO-220 TO-220F G D S ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted )
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SDP/F10N60
O-220
O-220F
SDP10N60
SDF10N60
O-220/220F
F10N60
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PDF
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10JL2CZ47
Abstract: No abstract text available
Text: 10JL2CZ47 TOSHIBA HIGH EFFICIENCY DIODE STACK HED SILICON EPITAXIAL TYPE 10JL2CZ47 Unit: mm SWITCHING MODE POWER SUPPLY APPLICATION CONVERTER & CHOPPER APPLICATION Repetitive Peak Reverse Voltage : VRRM = 600V Average Output Rectified Current : IO = 10A
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10JL2CZ47
10JL2CZ47
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ISOPLUS247
Abstract: 16P60P
Text: Preliminary Technical Information PolarPTM Power MOSFET IXTR16P60P VDSS ID25 RDS on = - 600V = - 10A ≤ 790mΩ Ω P-Channel Enhancement Mode Avalanche Rated ISOPLUS247 (IXTR) E153432 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C - 600
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IXTR16P60P
ISOPLUS247
E153432
100ms,
16P60P
ISOPLUS247
16P60P
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Untitled
Abstract: No abstract text available
Text: HI-SINCERITY Spec. No. : MOS200902 Issued Date : 2009.01.20 Revised Date : Page No. : 1/5 MICROELECTRONICS CORP. H10N60F H10N60F N-Channel Power MOSFET 600V,10A Applications • Switch Mode Power Supply • Uninterruptable Power Supply • High Speed Power Switching
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MOS200902
H10N60F
O-220FP)
H10N60F
183oC
217oC
260oC
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