10EDB Search Results
10EDB Price and Stock
Vishay Siliconix SI8810EDB-T2-E1MOSFET N-CH 20V 2.1A MICROFOOT |
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SI8810EDB-T2-E1 | Digi-Reel | 8,432 | 1 |
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Skyworks Solutions Inc SI8610ED-B-ISDGTL ISOLTR 5KV 1CH GP 16-SOIC |
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SI8610ED-B-IS | Tube | 46 | 1 |
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SI8610ED-B-IS | 68 |
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SI8610ED-B-IS | 1 |
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Skyworks Solutions Inc SI8610ED-B-ISRDGTL ISOLTR 5KV 1CH GP 16-SOIC |
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SI8610ED-B-ISR | Reel | 1,250 |
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SI8610ED-B-ISR |
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SI8610ED-B-ISR | 1 |
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Vishay Intertechnologies SI8810EDB-T2-E1N-CHANNEL 20-V (D-S) MOSFET - Tape and Reel (Alt: SI8810EDB-T2-E1) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SI8810EDB-T2-E1 | Reel | 20 Weeks | 3,000 |
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SI8810EDB-T2-E1 | 25,643 |
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SI8810EDB-T2-E1 | Reel | 6,000 | 3,000 |
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SI8810EDB-T2-E1 | 3,482 |
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SI8810EDB-T2-E1 | 21 Weeks | 3,000 |
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Integrated Silicon Solution Inc IS61WV10248EDBLL-10TLISRAM 8M, 2.4V-3.6V, 10ns LP Async SRAM |
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IS61WV10248EDBLL-10TLI | 66 |
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10EDB Datasheets (4)
Part |
ECAD Model |
Manufacturer |
Description |
Curated |
Datasheet Type |
PDF |
|---|---|---|---|---|---|---|
| 10EDB10 | Nihon Inter Electronics | Diode - 1A, 100v, Tj = 150°C | Original | |||
| 10EDB20 | Nihon Inter Electronics | Diode - 1A, 200v, Tj = 150°C | Original | |||
| 10EDB40 | Nihon Inter Electronics | DIODE - 1A 400V TJ = 150 deg C | Original | |||
| 10EDB60 | Nihon Inter Electronics | DIODE - 1A 600V TJ =150 deg C | Original |
10EDB Datasheets Context Search
Catalog Datasheet |
Type |
Document Tags |
PDF |
|---|---|---|---|
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Contextual Info: 1A 400V Tjw150℃ 拡散型シリコンダイオード Axial Lead Type Diffusion-type Silicon Rectifier Diode Diffusion 外 形 10EDB40 図 拡散型シリコンダイオード,リード線型 構造 Construction Diffusion-type Silicon Rectifier Diode 一般整流用 |
Original |
Tjw150 10EDB40 10EDB60 | |
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Contextual Info: 1A 600V Tjw150℃ 拡散型シリコンダイオード Axial Lead Type Diffusion-type Silicon Rectifier Diode Diffusion 外 形 図 10EDB60 拡散型シリコンダイオード,リード線型 構造 Construction Diffusion-type Silicon Rectifier Diode 一般整流用 |
Original |
Tjw150â 10EDB60 | |
10EDB20Contextual Info: ｓ DIODE Type : 10EDB20 OUTLINE DRAWING 1A 200V Tj =150 °C FEATURES * Miniature Size * Low Forward Voltage drop * Low Reverse Leakage Current * High Surge Capability * 26mm and 52mm Inside Tape Spacing Package Available Maximum Ratings Approx Net Weight:0.17g |
Original |
10EDB20 10EDB20 | |
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Contextual Info: ｓ DIODE 10EDB20 Type : OUTLINE DRAWING 1A 200V Tj =150 °C FEATURES * Miniature Size * Low Forward Voltage drop * Low Reverse Leakage Current * High Surge Capability * 26mm and 52mm Inside Tape Spacing Package Available Maximum Ratings Approx Net Weight:0.17g |
Original |
10EDB20 10EDB20 | |
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Contextual Info: 1A 200V Tjw150℃ 拡散型シリコンダイオード Axial Lead Type Diffusion-type Silicon Rectifier Diode Diffusion 外 10EDB20 形 図 拡散型シリコンダイオード,リード線型 構造 Construction Diffusion-type Silicon Rectifier Diode 一般整流用 |
Original |
Tjw150 10EDB20 | |
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Contextual Info: 拡散型シリコンダイオード 1A 400V Tjw150℃ Axial Lead Type Diffusion-type Silicon Rectifier Diode Diffusion 外 形 図 10EDB40 拡散型シリコンダイオード,リード線型 構造 Construction Diffusion-type Silicon Rectifier Diode 一般整流用 |
Original |
Tjw150â 10EDB40 | |
10EDBContextual Info: ｓ DIODE 10EDB60 Type : OUTLINE DRAWING 1A 600V Tj =150 °C FEATURES * Miniature Size * Low Forward Voltage drop * Low Reverse Leakage Current * High Surge Capability * 26mm and 52mm Inside Tape Spacing Package Available Maximum Ratings Approx Net Weight:0.17g |
Original |
10EDB60 10EDB60 10EDB | |
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Contextual Info: 1A 600V Tjw150℃ 拡散型シリコンダイオード Axial Lead Type Diffusion-type Silicon Rectifier Diode Diffusion 外 形 図 10EDB60 拡散型シリコンダイオード,リード線型 構造 Construction Diffusion-type Silicon Rectifier Diode 一般整流用 |
Original |
Tjw150 10EDB60 10JDA10 | |
10EDB40Contextual Info: ｓ DIODE Type : 10EDB40 OUTLINE DRAWING 1A 400V Tj =150 °C FEATURES * Miniature Size * Low Forward Voltage drop * Low Reverse Leakage Current * High Surge Capability * 26mm and 52mm Inside Tape Spacing Package Available Maximum Ratings Approx Net Weight:0.17g |
Original |
10EDB40 10EDB40 | |
10EDB60Contextual Info: 10EDB60 GLASS PASSIVATED RECTIFIER VOLTAGE: 600V CURRENT: 1.0A FEATURE R-1 Molded case feature for auto insertion High current capability Low leakage current High surge capability High temperature soldering guaranteed 250°C /10sec/0.375" lead length at 5 lbs tension |
Original |
10EDB60 /10sec/0 UL-94 10EDB60 | |
10EDB10Contextual Info: ｓ DIODE Type : 10EDB10 OUTLINE DRAWING 1A 100V Tj =150 °C FEATURES * Miniature Size * Low Forward Voltage drop * Low Reverse Leakage Current * High Surge Capability * 26mm and 52mm Inside Tape Spacing Package Available Maximum Ratings Approx Net Weight:0.17g |
Original |
10EDB10 10EDB10 | |
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Contextual Info: 拡散型シリコンダイオード 1A 200V Tjw150℃ Axial Lead Type Diffusion-type Silicon Rectifier Diode Diffusion 外 10EDB20 形 図 拡散型シリコンダイオード,リード線型 構造 Construction Diffusion-type Silicon Rectifier Diode 一般整流用 |
Original |
Tjw150â 10EDB20 | |
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Contextual Info: 拡散型シリコンダイオード 1A 600V Tjw150℃ Axial Lead Type Diffusion-type Silicon Rectifier Diode Diffusion 外 形 図 10EDB60 拡散型シリコンダイオード,リード線型 構造 Construction Diffusion-type Silicon Rectifier Diode 一般整流用 |
Original |
Tjw150â 10EDB60 | |
10EDB40Contextual Info: ｓ DIODE 10EDB40 Type : OUTLINE DRAWING 1A 400V Tj =150 °C FEATURES * Miniature Size * Low Forward Voltage drop * Low Reverse Leakage Current * High Surge Capability * 26mm and 52mm Inside Tape Spacing Package Available Maximum Ratings Approx Net Weight:0.17g |
Original |
10EDB40 10EDB40 | |
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10EDB10Contextual Info: ｓ DIODE 10EDB10 Type : OUTLINE DRAWING 1A 100V Tj =150 °C FEATURES * Miniature Size * Low Forward Voltage drop * Low Reverse Leakage Current * High Surge Capability * 26mm and 52mm Inside Tape Spacing Package Available Maximum Ratings Approx Net Weight:0.17g |
Original |
10EDB10 10EDB10 | |
10EDB10Contextual Info: 1A 100V Tjw150℃ 拡散型シリコンダイオード Axial Lead Type Diffusion-type Silicon Rectifier Diode Diffusion 10EDB10 外 形 図 拡散型シリコンダイオード,リード線型 構造 Construction Diffusion-type Silicon Rectifier Diode 一般整流用 |
Original |
Tjw150 10EDB10 10EDB10 | |
10EDB60Contextual Info: ｓ DIODE Type : 10EDB60 OUTLINE DRAWING 1A 600V Tj =150 °C FEATURES * Miniature Size * Low Forward Voltage drop * Low Reverse Leakage Current * High Surge Capability * 26mm and 52mm Inside Tape Spacing Package Available Maximum Ratings Approx Net Weight:0.17g |
Original |
10EDB60 10EDB60 | |
10EDB10Contextual Info: 1A Avg. 100 Volts Standard Recovery Diode •最大定格 Maximum Ratings ■OUTLINE DRAWING mm Item Symbol Conditions く り 返 し ピ ー ク 逆 電 圧 Repetitive Peak Reverse Voltage V RRM 100 平 均 整 流 電 流 Average Rectified Output Current |
Original |
10EDB10 10EDB10 | |
10EDB40Contextual Info: 1A Avg. 400 Volts Standard Recovery Diode •最大定格 Maximum Ratings ■OUTLINE DRAWING mm Item Symbol Conditions く り 返 し ピ ー ク 逆 電 圧 Repetitive Peak Reverse Voltage V RRM 400 平 均 整 流 電 流 Average Rectified Output Current |
Original |
10EDB40 10EDB40 | |
3PHA 20
Abstract: 3PFB 60 3PHA 3PRA 20 CL6B030 3PRA 60 EP10QY04 EP10HY marking code s4 SMc 3pra
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Original |
TYPE/SOD-123 10DDA EP05DA EP05DA40 10JDA 10EDA 10EDB EC10DS 3PHA 20 3PFB 60 3PHA 3PRA 20 CL6B030 3PRA 60 EP10QY04 EP10HY marking code s4 SMc 3pra | |
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Contextual Info: 1A Avg. 400 Volts Standard Recovery Diode •最大定格 Maximum Ratings ■OUTLINE DRAWING mm Item Symbol Conditions く り 返 し ピ ー ク 逆 電 圧 Repetitive Peak Reverse Voltage V RRM 400 50Hz 正弦半波抵抗負荷 50Hz half sine wave Resistance load |
Original |
10EDB40 | |
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Contextual Info: 1A Avg. 100 Volts Standard Recovery Diode •最大定格 Maximum Ratings ■OUTLINE DRAWING mm Item Symbol Conditions く り 返 し ピ ー ク 逆 電 圧 Repetitive Peak Reverse Voltage V RRM 100 50Hz 正弦半波抵抗負荷 50Hz half sine wave Resistance load |
Original |
10EDB10 | |
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Contextual Info: 1A Avg. 600 Volts Standard Recovery Diode •最大定格 Maximum Ratings ■OUTLINE DRAWING mm Item Symbol Conditions く り 返 し ピ ー ク 逆 電 圧 Repetitive Peak Reverse Voltage V RRM 600 50Hz 正弦半波抵抗負荷 50Hz half sine wave Resistance load |
Original |
10EDB60 | |
diode smd ED 74
Abstract: 200v dc 10A buck converter 1N538 30dl4 FRD FCF10A20 12v 50w smps smps 10w 12V FRD 31DF2 EIAJ ED-4701 B-121 VFIR
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Original |
O-220 O-247 O-247 aSn-37Pb bSn-37Pb diode smd ED 74 200v dc 10A buck converter 1N538 30dl4 FRD FCF10A20 12v 50w smps smps 10w 12V FRD 31DF2 EIAJ ED-4701 B-121 VFIR | |