AD7576
Abstract: AD7576BQ AD7576KN AD7576SQ AD7576TQ 74hc4000 6809 8bit Instruction set
Text: ANALOG DEVICES LC2M0S 10fxs jjiP Compatible 8-Bit ADC AD7576 FEATURES Single + 5V Operation with External Positive Reference Fast Conversion Time: IOjls No Missed Codes Over Full Temperature Range Microprocessor Compatible Low Cost Low Power 15mW 100ns Data Access Time
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AD7576
100ns
AD7576
cont741
mil-m-38s10
AD7576BQ
AD7576KN
AD7576SQ
AD7576TQ
74hc4000
6809 8bit Instruction set
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Untitled
Abstract: No abstract text available
Text: DS4393-2.6 ITC14415006D POWERLINE N-CHANNELIGBT CHIP FEATURES TYPICAL KEY PARAMETERS 25 C VCES 600V • n - Channel. ■ Enhancement Mode. ■ High Input Impedance. ■ High Switching Speed. ■ Latch-Free Operation. ■ Low Forward Voltage Drop. ■ Short Circuit Capability (10fxs)
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DS4393-2
ITC14415006D
10fxs)
37bfl522
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Untitled
Abstract: No abstract text available
Text: SP8603, SP8605, SP8610 SIGNAL PROCESSING EXCELLENCE 12-Bit Sampling A/D Converters • 3|is, 5|as or 10jxs Sample/Conversion Time ■ Unipolar OV to +10V and OV to +5V Input ■ No Missing Codes Over Temperature ■ AC Performance Over Temperature 72dB Signal-to-Noise Ratio at Nyquist
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SP8603,
SP8605,
SP8610
12-Bit
10jxs
49kHz
49kHz
28-Pin
SP86XX
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TDA 5700
Abstract: tda 7770 IM6402 SK 5207 tda 8838 SKI 3203 TDA 3006 hs 3161 z9009 IM6100
Text: IM 6 1 0 1 P ro gram m able In te rfa c e E lem en t P IE D m ü ^D L FEATURES GENERAL DESCRIPTION • Com patible with IM 6100 Microprocessor The IM6101 is a Program mable Interface Element (PIE) device designed for interfacing various peripheral chips such as U A R T ’s, F IF O ’s, Keyboard Scanner’s to
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IM6101
IM6100
IM6101-1
IM6101A
im6101-1ipl
im6101-aiplCVE,
TDA 5700
tda 7770
IM6402
SK 5207
tda 8838
SKI 3203
TDA 3006
hs 3161
z9009
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Untitled
Abstract: No abstract text available
Text: SGS-THOMSON M29F105B HIÊ ô [l[LI(gTÎ^ R!lD(êi 1 Mb (x16, Block Erase) SINGLE SUPPLY FLASH MEMORY PRELIMINARY DATA 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS FAST ACCESS TIME: 55ns FAST PROGRAMMING TIME: 10^is typical PROGRAM/ERASE CONTROLLER (P/E.C.)
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M29F105B
TSOP40
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IC CD 4440 pin diagram
Abstract: GZ150 MCM4L4400-70 MCM44400N70 MCM44400N-60
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCM44400 MCM4L4400 Advance Information 1M x 4 CMOS Dynamic RAM Fast Page Mode The MCM44400 is a 0.8n CMOS high-speed dynamic random access memory. It is organized as 1,048,576 four-bit words and fabricated with CMOS silicon-gate
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MCM44400
MCM4L4400
MOTOD010
4L4400
MCM44400N60
MCM44400N70
MCM44400N80
MCM4L4400N60
IC CD 4440 pin diagram
GZ150
MCM4L4400-70
MCM44400N-60
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SMBJ64A
Abstract: No abstract text available
Text: SMBG AND SMBJ5.0 THRU 170CA SURFACE MOUNT T ra n s Z orb TRANSIENT VOLTAGE SUPPRESSOR Stand-off Voltage - 5 . 0 to 170 Volts Peak Pulse Power - 600 Watts DO-214AA FEATURES MODIFIED J-BEND 0.086 2.20 J | Plastic package has Underwriters Laboratory Flammability
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170CA
DO-214AA
10/1000ns
10fxs
SMBJ64A
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Untitled
Abstract: No abstract text available
Text: PROGRAMMABLE FU JITSU SCHOTTK Y 16384-BIT MB 7134E-W READ ONLY MEMORY November 1985 Edition 1.0 SCHOTTKY 16384-BIT DEAP PROM 4096 WORDS x 4 BITS This Fujitsu MB 7T34-W is high speed Schottky TT L electrically field pro grammable read only memory organized as 4096 words by 4 bits. With threestate outpus on the MB 7134-W, memory expansion is simple.
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16384-BIT
7134E-W
7T34-W
134-W,
DIP-20C-C03
8C-A01)
28-PAD
LCC-28C-A02)
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diode byt 45
Abstract: DIODE DO-220
Text: / = T SGS-THOMSON ^ 7 # BYT 08PI-1000 f FAST RECOVERY RECTIFIER DIODE • VERY HIGH REVERSE VOLTAGE CAPA BILITY ■ VERY LOW REVERSES RECOVERY TIME ■ VERY LOW SWITCHING LOSSES ■ LOW NOISE TURN-OFF SWITCHING ■ INSULATED : Capacitance 7pF Insulting voltage 500 Vrms
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08PI-1000
100cm
diode byt 45
DIODE DO-220
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8542A
Abstract: No abstract text available
Text: General Purpose CMOS Rail-to-Rail Amplifiers AD8541/AD8542/AD8544 ANALOG DEVICES PIN CONFIGURATIONS FEATURES Single Supply Operation: +2.7 V to +5.5 V Low Supply Current: 45 jiA/Am plifier W ide Bandwidth: 1 MHz No Phase Reversal Low Input Currents: 4 pA
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AD8541/AD8542/AD8544
RU-14
14-Lead
SO-14)
RU-08)
8542A
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CQ220-8B
Abstract: CQ220-8D CQ220-8M CQ220-8N
Text: Datasheet ^ - iie n ir n M CQ220-8B CQ220-8D CQ220-8M CQ220-8N • Sem iconductor Corp. 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 8.0 AMP TRIAC 200 THRU 800 VOLTS Manufacturers of World Class Discrete Semiconductors
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CQ220-8B
CQ220-8D
CQ220-8M
CQ220-8N
O-220AB
CQ220
CQ220
CQ220-8N
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Untitled
Abstract: No abstract text available
Text: SGS-THOMSON K8D §Mim(Sfflfi!W[] i M29F040 4 Mb (512K x 8, Block Erase SINGLE SUPPLY FLASH MEMORY • 5V ± 10% SUPPLY VOLTAGE for PROGRAM/ERASE and READ OPERATIONS ■ FAST ACCESS TIME: 70ns ■ BYTE PROGRAMMING TIME: 1Ojas typical ■ ERASE TIME - Block: 1.0 sec typical
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M29F040
12MHz)
TSOP32
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MAX512CPD
Abstract: No abstract text available
Text: 19-0252; Rev 0, 4/94 Low-Cost, 7Wpfe, 8-Bit Voltage-Output DACs w ith S erial In te rfa c e .Features ♦ Operate from a Single +5V MAX512 or +3V (MAX513) Supply, or from Bipolar Supplies ♦ Low Power Consumption 1mA Operating Current <1nA Shutdown Current
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MAX512)
MAX513)
14-Pin
MAX512CPD
MAX512CSD
MAX512C/D
IQ127mm|
004in.
MAX512CPD
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2sb504
Abstract: 2t306 2N5983 2SD588 2sd73 2sc497 HD6801V
Text: /T 1 4 R C“ 4 j r\ & M- -_ ~- i l^ it 4 4 ~\ 3 — 4 & 3 * 4 i3 !. 3: " & -\ vi- W- 4 3: - x 1 — v!r 'Hv j 4 n 3 fr 4 j •& $ 3t * 3 r^-. r+ *; 5+ x i •3I .<> iS I R k Q PS Q fit S r\ tiSE H-, 4 4 ~9> x-v r-i 5+ ' s, (vs •u- lit ZSZ\'1* n 3 St
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S029747
SS963&
2sb504
2t306
2N5983
2SD588
2sd73
2sc497
HD6801V
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Untitled
Abstract: No abstract text available
Text: GEC P LE SS EY Si S E M I C O N D U C T O R S DS4326-3.1 GP2000FSS06S POWERLINE N-CHANNELIGBT MODULE TYPICAL KEY PARAMETERS v¥ c e s 600V v CE sal 2.1V 1 2000A C(CONT) 1 4000A C(PK) 290ns tr 430ns t. APPLICATIONS • High Power Switching. ■ Motor Control.
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DS4326-3
GP2000FSS06S
290ns
430ns
10fxs)
44lbs
70lbs
88lbs
18lbs
1500g
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A4NV
Abstract: No abstract text available
Text: HYUNDAI H Y 5 1 1 6 4 1 0 S e r ie s 4M x 4-bit CMOS DRAM with Write-Per-Bit DESCRIPTION The HY5116410 is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit with function of Write-Per-Bit. The HY5116410 utilizes Hyundai's CMOS silicon gate process technology as well as advanced
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HY5116410
1A003-10-MAY94
HY511641OJC
HY5116410UC
HY5116410TC
HY5116410LTC
HY5116410RC
A4NV
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TOLD-9211
Abstract: told 9211 driver transistor ztx told 9211 toshiba told 9211
Text: X T L in C A B . - TECHNOLOGY y / LT111Q M icropow er DC-DC C onverter Adjustable and Fixed 5V, 12V F€ATUR€S DCSCRIPTIOfl • Operates at Supply Voltages From 1,0V to 30V ■ Works in Step-Up or Step-Down Mode ■ Only Three External Off-the-Shelf Components
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LT111Q
LT1110
TOLD-9211
told 9211 driver
transistor ztx
told 9211
toshiba told 9211
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Untitled
Abstract: No abstract text available
Text: M29F040 4 Mbit 512Kb x 8, Block Erase Single Supply Flash Memory • 5V ± 10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ FAST ACCESS TIME: 70ns ■ BYTE PROGRAMMING TIME: 1Ojas typical ■ ERASE TIME - Block: 1.0 sec typical - Chip: 2.5 sec typical
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M29F040
512Kb
12MHz)
TSOP32
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Untitled
Abstract: No abstract text available
Text: SGS-THOMSON M29F102B HIÊ ô [l[LI(gTÎ^ R!lD(êi 1 Mb (x16, Block Erase) SINGLE SUPPLY FLASH MEMORY PRELIM IN ARY DATA • 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ FAST ACCESS TIME: 55ns ■ FAST PROGRAMMING TIME: 1Ojas typical
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M29F102B
M28F10TH
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lm358 thermocouple
Abstract: adjustable zero span circuit with lm358 AD208-SPECIFICATI0NS D246R 1P250 lm358 square wave lm358 thermocouple k AMPLI DUAL CV 60
Text: A N A LO G D E V IC E S High Precision, Low Offset, mV Input Isolation Amplifier AD208 FEATURES Wide Gain Range: 1 to 1000 V /V Low Nonlinearity: ±0.0125% Low Input Offset Voltage: ±0.27 mV, max G = 1000 V/V Low Offset Drift: ±1.5 (j.V/°C , max (G = 1000 V /V )
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AD208
AD204
AD208
lm358 thermocouple
adjustable zero span circuit with lm358
AD208-SPECIFICATI0NS
D246R
1P250
lm358 square wave
lm358 thermocouple k
AMPLI DUAL CV 60
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