Untitled
Abstract: No abstract text available
Text: Si GEC PLE SS EY SEMICONDUCTORS QS4325-3.3 GP250MHB06S POWERUNE N-CHANNEL IGBT MODULE APPLICATIONS • High Power Switching. ■ Motor Control. ■ UPS. ■ AC And DC Servo Drive Amplifiers. TYPICAL KEY PARAMETERS 600V ^C E S v C E « a t 2.1V 250A ^ C (C O N T )
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QS4325-3
GP250MHB06S
290ns
430ns
44lbs
70lbs
88lbs
18lbs
1500g
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Untitled
Abstract: No abstract text available
Text: GEC P L E S S E Y S E M I C O N D U C T O R S DS4324-3.1 GP500LSS06S p o w e r l in e n -c h a n n e l ig b t m o d u l e TYPICAL KEY PARAMETERS VCES 600V VCE ial 2.1V W ond 500A APPLICATIONS • High Power Switching. ■ Motor Control. ■ UPS. ■ AC And DC Servo Drive Amplifiers.
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DS4324-3
GP500LSS06S
290ns
430ns
44lbs
70lbs
88lbs
18lbs
1500g
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DIM200MKS12-A000
Abstract: DS-5552
Text: DIM200MKS12-A000 DIM200MKS12-A000 IGBT Chopper Module Replaces November 2002, issue DS5552-1.2 FEATURES • 10µs Short Circuit Withstand ■ Non Punch Through Silicon ■ Isolated Copper Baseplate DS5552-1.2 November 2002 KEY PARAMETERS VCES typ VCE(sat)*
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DIM200MKS12-A000
DS5552-1
60arantee
DIM200MKS12-A000
DS-5552
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was dual transistor
Abstract: DIM200MBS12-A000
Text: DIM200MBS12-A000 DIM200MBS12-A000 IGBT Bi-Directional Switch Module Replaces issue May 2002, version DS5543-1.3 FEATURES • 10µs Short Circuit Withstand ■ Non Punch Through Silicon ■ Isolated Copper Baseplate DS5545-2.1 June 2002 KEY PARAMETERS VDRM
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DIM200MBS12-A000
DS5543-1
DS5545-2
DIM200MBS12-A000
was dual transistor
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Untitled
Abstract: No abstract text available
Text: JULY 1996 GP200MHB12S ADVANCE ENGINEERING DATA DS4339-4.2 GP200MHB12S POWERLINE N-CHANNEL IGBT MODULE APPLICATIONS TYPICAL KEY PARAMETERS 1200V VCES 2.8V VCE sat 200A IC(CONT) 400A IC(PK) 190ns tr 840ns tf • High Power Switching. ■ Motor Control. ■ UPS.
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GP200MHB12S
DS4339-4
190ns
840ns
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Untitled
Abstract: No abstract text available
Text: JULY 1996 GP1600FSS12S ADVANCE ENGINEERING DATA DS4337-4.2 GP1600FSS12S POWERLINE N-CHANNEL IGBT MODULE APPLICATIONS TYPICAL KEY PARAMETERS 1200V VCES 2.8V VCE sat 1600A IC(CONT) 3200A IC(PK) 190ns tr 840ns tf • High Power Switching. ■ Motor Control.
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GP1600FSS12S
DS4337-4
190ns
840ns
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GP150MHB16S
Abstract: No abstract text available
Text: IV II^ T E L GP150MHB16S L_ Powerline N-Channel IGBT Module S E M IC O N D U C T O R . . . , dvance Inform ation Supersedes April 1998 version, DS4131 -6 .6 The GP150MHB16S is a dual switch 1600 volt, robust
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GP150MHB16S
DS4131
GP150MHB16S
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Untitled
Abstract: No abstract text available
Text: M ITEL GP500LSS06S Powerline N-Channel IGBT Module SEMICONDUCTOR Supersedes July 1998 version, DS4324 - 4.3 The G P 500LS S 06S is a single sw itch 600V, robust n c h a n n e l e n h a n c e m e n t m od e in s u la te d g a te b ip o la r tran sistor IGBT . Designed fo r low p ow er loss, the m odule
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DS4324
GP500LSS06S
500LS
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Untitled
Abstract: No abstract text available
Text: GP1200FSS16S M ITEL Powerline N-Channel IGBT Module SEMICONDUCTOR Supersedes March 1998 version, DS4336 - 5.9 DS4336 - 6.0 December 1998 TYPICAL KEY PARAMETERS VCES 1600V V CE sat , 3.5V APPLICATIONS • High Pow er Sw itching. ■ M otor C ontrol. ■
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GP1200FSS16S
DS4336
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GP600FHB16S
Abstract: No abstract text available
Text: GP600FHB16S M ITEL Powerline N-Channel IGBT Module SEMICONDUCTOR Supersedes March 1998 version, DS4545 - 2.6 DS4545 - 2.7 December 1998 TYPICAL KEY PARAMETERS VCES 1600V V C E sat , 3.5V 'q c o N T , 600A ' c (PK, 1200A APPLICATIONS • High Pow er Sw itching.
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GP600FHB16S
DS4545
GP600FHB16S
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200NH
Abstract: DS4325
Text: MITEL GP250MHB06S Powerline N-Channel IGBT Module SEMICONDUCTOR Supersedes July 1998 version, DS4325 - 4.3 DS4325 - 4.4 Decem ber 1998 The G P 250M H B 06S is a dual sw itch 600V robust n c h a n n e l e n h a n c e m e n t m od e In su la te d g a te b ip o la r
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DS4325
GP250MHB06S
200NH
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1kva inverter circuit diagram
Abstract: circuit diagram of 5kva online ups 8kva inverter circuit diagram 3kva UPS charger circuit diagram 2kva ups circuit diagram 2kva inverter circuit diagram inverter 5kva circuit diagram single phase inverter IGBT 3kva 3 phase UPS block WITH CIRCUIT diagram ASE10S1
Text: TRUE ON LINE UPS MODEL TYPE ASE-H HIGH RELIABILITY FAULT TOLERANT UPS SYSTEM Uninterruptible Power Supply Input ASE-H True On-Line Supporting Method Network All Time Inverter Power Feeding years 19-inch 5Life Rack Rack Mountable of battery unit Output AC100,110,115,120V AC100,110,115,120V
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19-inch
AC100
AC208
1kva inverter circuit diagram
circuit diagram of 5kva online ups
8kva inverter circuit diagram
3kva UPS charger circuit diagram
2kva ups circuit diagram
2kva inverter circuit diagram
inverter 5kva circuit diagram
single phase inverter IGBT 3kva
3 phase UPS block WITH CIRCUIT diagram
ASE10S1
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bi-directional switches IGBT
Abstract: DIM200MBS12-A000 7404* 15v
Text: DIM200MBS12-A000 DIM200MBS12-A000 IGBT Bi-Directional Switch Module Preliminary Information DS5545-1.3 May 2002 FEATURES • 10µs Short Circuit Withstand ■ Non Punch Through Silicon KEY PARAMETERS VDRM typ VT (max) IC (max) IC(PK) ±1200V 4.3V 200A 400A
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DIM200MBS12-A000
DS5545-1
DIM200MBS12-A000
bi-directional switches IGBT
7404* 15v
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AN4502
Abstract: AN4503 GP401LSS18 DSA0018823 ups sine wave inverter circuit diagram
Text: GP401LSS18 GP401LSS18 Powerline N-Channel Single Switch Low Loss IGBT Module Preliminary Information DS5288-1.3 January 2000 The GP401LSS18 is a single switch 1800V, robust n channel enhancement mode insulated gate bipolar transistor IGBT module. Designed for low power loss, the
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GP401LSS18
DS5288-1
GP401LSS18
AN4502
AN4503
DSA0018823
ups sine wave inverter circuit diagram
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DIM400LSS17-A000
Abstract: No abstract text available
Text: DIM400LSS17-A000 DIM400LSS17-A000 Single Switch IGBT Module Replaces issue February 2002, version DS5497-2.0 FEATURES • 10µs Short Circuit Withstand ■ Non Punch Through Silicon ■ Isolated Copper Base DS5497-3.0 March 2002 KEY PARAMETERS VCES typ VCE(sat) *
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DIM400LSS17-A000
DS5497-2
DS5497-3
DIM400LSS17-A000
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DS5458
Abstract: DFM300MXS18-A000
Text: DFM300MXS18-A000 DFM300MXS18-A000 Fast Recovery Diode Module Preliminary Information DS5458-1.1 May 2001 FEATURES • Low Reverse Recovery Charge ■ High Switching Speed ■ Low Forward Voltage Drop KEY PARAMETERS VRRM VF typ (max) IF (max) IFM 1800V 2.0V
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DFM300MXS18-A000
DS5458-1
DFM300MXS18-A000
DS5458
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DIM400LSS17-A000
Abstract: No abstract text available
Text: DIM400LSS17-A000 DIM400LSS17-A000 Single Switch IGBT Module Replaces issue MArch 2002, version DS5497-3.0 FEATURES • 10µs Short Circuit Withstand ■ Non Punch Through Silicon ■ Isolated Copper Base Plate DS5497-4.1 June 2002 KEY PARAMETERS VCES typ
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DIM400LSS17-A000
DS5497-3
DS5497-4
DIM400LSS17-A000
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GP350MHB06S
Abstract: No abstract text available
Text: GP350MHB06S GP350MHB06S Half Bridge IGBT Module Replaces April 2002 version, DS4923-6.0 FEATURES DS4923-6.1 july 2002 KEY PARAMETERS • n - Channel VCES 600V ■ High Switching Speed VCE sat * (typ) 2.0V ■ Low Forward Voltage Drop (max) 500A Isolated Base
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GP350MHB06S
DS4923-6
GP350MHB06S
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Untitled
Abstract: No abstract text available
Text: DIM400LSS17-A000 DIM400LSS17-A000 Single Switch IGBT Module Replaces issue June 2002, version DS5497-4.1 FEATURES • 10µs Short Circuit Withstand ■ Non Punch Through Silicon ■ Isolated Copper Base Plate FDS5497-5.0 July 2003 KEY PARAMETERS VCES typ
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DIM400LSS17-A000
DS5497-4
FDS5497-5
DIM400LSS17-A000
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Untitled
Abstract: No abstract text available
Text: DIM400LSS12-A000 DIM400LSS12-A000 Single Switch IGBT Module Replaces March 2003, version DS5534-3.0 FEATURES • 10µs Short Circuit Withstand ■ Non Punch Through Silicon ■ Isolated Copper Baseplate FDS5534-4.0 July 2003 KEY PARAMETERS VCES typ VCE(sat)*
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DIM400LSS12-A000
DS5534-3
FDS5534-4
DIM400LSS12-A000
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TL024
Abstract: 802C-E53M6 802C-E53M6B-S7 802C-H55M6B 802F-E60M2 802C-J57M18BR 802F-S62PM2-CG 802F-S62P8-CG 802C-E53M6B 802F-E60MS2-N5
Text: An Investment in Plant Floor Safety 802C Safety Cable Pull Switches 802E Hinge Safety Interlock Switches 802F Safety Interlock Switches Safety Switches Notes 2 Safety Switches 802C Cable Pull Safety Switches 3. The installation of a stop switch
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802SS-2
TL024
802C-E53M6
802C-E53M6B-S7
802C-H55M6B
802F-E60M2
802C-J57M18BR
802F-S62PM2-CG
802F-S62P8-CG
802C-E53M6B
802F-E60MS2-N5
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Untitled
Abstract: No abstract text available
Text: @ M ITEL GP400LSS16S Powerline N-Channel IGBT Module SEMICONDUCTOR Advance Inform ation DS4987 - 1.3 The GP400LSS16S is a single switch 1600V, robust n channel en han cem ent m ode insulated gate b ipolar transistor IGBT module. Designed for low power loss, the
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GP400LSS16S
DS4987
GP400LSS16S
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GP250MHB06S
Abstract: IGBT 3300V 250A
Text: GP250MHB06S GP250MHB06S Half Bridge IGBT Module Replaces April 2002 version, DS4325 -7.0 FEATURES DS4325-7.1 July 2002 KEY PARAMETERS • n - Channel VCES ■ High Switching Speed VCE sat * (typ) ■ Low Forward Voltage Drop (max) 350A Isolated Base IC25 ■
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GP250MHB06S
DS4325
DS4325-7
GP250MHB06S
IGBT 3300V 250A
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GP500LSS06S
Abstract: transistor 600v 500a A50B
Text: GP500LSS06S GP500LSS06S Single Switch IGBT Module Replaces July 2002 version, DS4324-7.1 FEATURES FDS4324-8.0 July 2003 KEY PARAMETERS • n - Channel VCES ■ High Switching Speed VCE sat * (typ) ■ Low Forward Voltage Drop Isolated Base IC25 (max) 700A
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GP500LSS06S
DS4324-7
FDS4324-8
GP500LSS06S
transistor 600v 500a
A50B
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