190NS Search Results

Contextual Info: JULY 1996 GP200MHB12S ADVANCE ENGINEERING DATA DS4339-4.2 GP200MHB12S POWERLINE N-CHANNEL IGBT MODULE APPLICATIONS TYPICAL KEY PARAMETERS 1200V VCES 2.8V VCE sat 200A IC(CONT) 400A IC(PK) 190ns tr 840ns tf • High Power Switching. ■ Motor Control. ■ UPS.

Contextual Info: JULY 1996 GP1600FSS12S ADVANCE ENGINEERING DATA DS4337-4.2 GP1600FSS12S POWERLINE N-CHANNEL IGBT MODULE APPLICATIONS TYPICAL KEY PARAMETERS 1200V VCES 2.8V VCE sat 1600A IC(CONT) 3200A IC(PK) 190ns tr 840ns tf • High Power Switching. ■ Motor Control.

KM658128

Contextual Info: m s« KM658128 SAMSUNG Semiconductor 131,072 WORD x 8 BIT CMOS PSEUDO STATIC RAM May 1991 FEATURES DESCRIPTION • Fast Access Time: — CE Access Tim e. 80, 100, 120ns Max — Cycle Time Random Read/Write Cycle Time .130, 160, 190ns (Max)

Contextual Info: APT15F60B APT15F60S 600V, 16A, 0.43Ω Max, Trr ≤ 190nS N-Channel FREDFET POWER MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced

APT15F60B

Abstract: APT15F60S MIC4452
Contextual Info: APT15F60B APT15F60S 600V, 16A, 0.43Ω Max, Trr ≤ 190nS N-Channel FREDFET POWER MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced

PLESSEY CLA

Contextual Info: GEC PLESSEY S i S E M I C O N D U C T O R S DS4338-4.2 GP800DHB12S POWERLINE N-CHANNELIGBT MODULE APPLICATIONS TYPICAL KEY PARAMETERS 1200V ^CES 2.8V 800A l«COMT 1600A ^C PK) 190ns tr 840ns • High Power Switching. ■ Motor Control. ■ UPS. ■ AC And DC Servo Drive Amplifiers.

Contextual Info: GP1600FSS12S M ITEL Powerline N-Channel IGBT Module SEMICONDUCTOR Advance Inform ation Supersedes July 1996 version, DS4337 - 4.2 DS4337 - 4.3 March 1998 TYPICAL KEY PARAMETERS 1200V CES 2.8V ^CE sat 1600A C(CONT) 3200A C(PK) 190ns 840ns APPLICATIONS •

AM9064-15

Abstract: AM9064-15PC am9064 AM9064-10 R/Detector/"Detector IC"/"CD"/Am2964B/Am9064-15
Contextual Info: Am9064 65,536 x 1 Dynamic RAM DISTINCTIVE CHARACTERISTICS High speed RAS access of 100 and 120ns Single +5V ±10% power supply Low power 22mW standby - 330mW active — 220ns cycle time - 385mW active — 190ns cycle time Read, Write, Read-Modify-Write, Page-Mode and RASOnly refresh capability

Contextual Info: JULY 1996 GP1200FSS12S ADVANCE ENGINEERING DATA DS4547-1.2 GP1200FSS12S POWERLINE N-CHANNEL IGBT MODULE APPLICATIONS TYPICAL KEY PARAMETERS 1200V VCES 2.8V VCE sat 1200A IC(CONT) 2400A IC(PK) 190ns tr 840ns tf • High Power Switching. ■ Motor Control.

dc servo motor control

Abstract: DS4338
Contextual Info: GP800DHB12S M ITEL Powerline N-Channel IGBT Module SEMICONDUCTOR Advance Inform ation Supersedes July 1996 version, DS4338 - 4.2 DS4338 - 4.3 March 1998 TYPICAL KEY PARAMETERS 1200V 'c E sa„ 2.8V 'c c o n t 800A 'c ,P K , 1600A tr 190ns t. 840ns APPLICATIONS

GP1200FSS12S

Contextual Info: GP1200FSS12S M ITEL Powerline N-Channel IGBT Module SEMICONDUCTOR Advance Inform ation Supersedes July 1996 version, DS4547 -1 .2 DS4547 -1 .3 TYPICAL KEY PARAMETERS 1200V CES 2.8V ^CE sat 1200A C(CONT) 2400A C(PK) 190ns 840ns APPLICATIONS • High Power Switching.

514000

Contextual Info: SIEMENS PRELIMINARY DATA SHEET, 11/88 HYB 514000-80/10 41 9 4 3 0 4 Bit Dynamic RAM 4194304 words by 1 bit orgânizâtion Fast access and cycle time 80ns access time 160ns cycle time HYB 514000-80 100ns access time 190ns cycle tim e (HYB 514000-10) Fast page m ode cycle time

KM41C1001

Abstract: A953
Contextual Info: ^ —— SAMSUNG SEM ICO NDUCTOR INC Ifl — i* s PRELIMINARY SPECIFICATION CMOS DRAM KM41C1001 1 Mx 1 Bit Dynamic RAM with Nibble Mode GENERAL DESCRIPTION FEATURES • Performance range: tu e tcAC ♦ rc KM41C1001-10 100ns 25ns 190ns KM41C1001-12 120ns 30ns

Contextual Info: Si G E C P L E S S E Y S E M I C O N D U C T O R S DS4547-1.2 GP1200FSS12S POWERLINE N-CHANNELIGBT MODULE TYPICAL KEY PARAMETERS VCES 1200V 2.8V CE sai APPLICATIONS • High Power Switching. ■ Motor Control. 1200A ^C(COhfT) ■ UPS. 2400A 190ns 840ns C(PK)

Contextual Info: APT15F60B APT15F60S 600V, 16A, 0.43Ω Max, Trr ≤ 190nS N-Channel FREDFET TO POWER MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced

Contextual Info: JULY 1996 GP400LSS12S ADVANCE ENGINEERING DATA DS4137-6.2 GP400LSS12S POWERLINE N-CHANNEL IGBT MODULE APPLICATIONS TYPICAL KEY PARAMETERS 1200V VCES 2.8V VCE sat 400A IC(CONT) 800A IC(PK) 190ns tr 840ns tf • High Power Switching. ■ Motor Control. ■ UPS.

2SK1262

Abstract: 2SK12
Contextual Info: P o w er F-MOS FET 2SK 1262 2SK 1262 Silicon N-channel Power F-M O S FET • Package Dim ensions ■ Features • Low ON resistance R d s on : R Us (on) l = 0.048fl (typ.) • High switching ra te : tf = 190ns (typ.) Unit: mm • No secondary breakdow n

514000

Abstract: 350mil
Contextual Info: SIEMENS PRELIMINARY DATA SHEET, 11/88 HYB 514000-80/10 41 9 4 3 0 4 Bit Dynamic RAM 4 1 9 4 3 0 4 w o rd s by 1 bit o r g a n iz a tio n Fast access a n d cycle tim e 80ns access tim e 160ns cycle t im e HYB 5 1 4 0 0 0 -8 0 100ns access t im e 190ns cycle ttm e (HYB 5 1 4 0 0 0 -1 0 )

KM41C1000

Abstract: KM41C1000P km41c1000 B 1mx1 DRAM DIP
Contextual Info: SAMSUNG SEMICONDUCTOR INC T f i D Ë J 7 T t.4 1 4 E 0 0 0 5 4 ^ 3 7 - y £ - '. CMOS DRAM KM41C1000 1Mx1 Bit Dynamic RAM with Fast Page Mode GENERAL DESCRIPTION FEATURES • Performance range: tRAC tcAC tRC KM41C1000-10 100ns 25ns 190ns KM41C1000-12 120ns

TC51832FL10

Abstract: TC51832 TC51832FL-10 TC51832PL-10 256IC 832P
Contextual Info: 832P/S 832 P/S 832P/S 32,768 WORD x 3 BIT CMOS PSEUDO STATIC RAM IDESCRIPTION] The TC51832 Family is a 256IC bit high-speed CMOS Pseudo-Static RAM organized as 32,768 words by 8 bits. The TC51832 Family utilizes one transistor dynamic memory cell array with

Contextual Info: TOSHIBA MOS MEMORY PRODUCTS THM 81002S/L-85, 10 , 12 description! The T K M 8 1 0 0 2 S / L is a 1,048,576 w o r d s b y 8 b i t s pcs of TC511 0 0 2 J on the p r i nted c i rcuit board. The T H M 8 1 0 0 2 S / L is o p t i m i z e d for a p p l i c a t i o n to

TC518129

Abstract: de interlace
Contextual Info: TOSHIBA TC518129AP/ASP/AF/AFW-80/10/12 TC518129APL/ASPL/AFL/AFWL30/10/12 TC518129AFTLS0/10/12 SILICON GATE CMOS 131,072 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description The T C 5 1 8 1 2 9 A is a 1M bit high speed C M O S p se udo static R AM organized as 131,07 2 w o rd s by 8 bits. The TC 5 18 1 29A utilizes

2PG001

Abstract: Panasonic IGBT TO220 2PG002 2PG003
Contextual Info: Fast switching 150 ns and low VCE(sat) (2.4 V) PDP Drive IGBT Devices: 2PG00X Series „ Overview The 2PG00X series are PDP drive IGBT devices that respond to the needs for fast switching and low loss characteristics associated with the increasing image quality and lower power of PDP displays. These

IRZ 40

Abstract: ISL8107 ISL8107IRZ ISL8107IRZ-T MO-220 TB347 TB379
Contextual Info: ISL8107 Data Sheet October 29, 2008 Single-Phase Pulse-Width Modulation PWM Controller with Integrated High-Side Gate Drivers The ISL8107 is a single phase, non-synchronous buck controller with an integrated high-side MOSFET driver. The controller operates from 9V to 75V input voltage range. The