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ATGBICS CWDM-SFP-10G-1310-10-HP-MSA-AT MSA Compliant SFP+ 10G
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	CWDM-SFP-10G-1310-10-HP-MSA-AT	Tray	1,709		1	1 $135 10 $135 100 $128.3 1000 $114.8 10000 $114.8	Buy Now
ATGBICS CWDM-SFP-10G-1310-40-I-MSA-AT Compatible SFP+ 10G
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	CWDM-SFP-10G-1310-40-I-MSA-AT	Tray	1,684		1	1 $170 10 $170 100 $161.5 1000 $144.5 10000 $144.5	Buy Now
ATGBICS CWDM-SFP-10G-1310-20-MSA-AT Compatible SFP+ 10G
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	CWDM-SFP-10G-1310-20-MSA-AT	Tray	1,659		1	1 $118 10 $118 100 $112.1 1000 $100.3 10000 $100.3	Buy Now
ATGBICS CWDM-SFP-10G-1310-60-MSA-AT MSA Compliant SFP+ 10G
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	CWDM-SFP-10G-1310-60-MSA-AT	Tray	1,624		1	1 $179 10 $179 100 $170.1 1000 $152.2 10000 $152.2	Buy Now
ATGBICS CWDM-SFP10G-1310-80-C Compatible SFP+ 10G
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	CWDM-SFP10G-1310-80-C		1,544		1	1 $170 10 $170 100 $161.5 1000 $144.5 10000 $144.5	Buy Now

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10G131 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
10G131 Abstract: No abstract text available Text: 10G131 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT 10G131 Strobe Flash Applications Unit: mm • Supplied in compact and thin package requires only a small mounting area • 5th generation trench gate structure IGBT • Enhancement-mode	Original	GT10G131 10G131	PDF
Untitled Abstract: No abstract text available Text: 10G131 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT 10G131 Strobe Flash Applications Unit: mm • 5th generation trench gate structure IGBT • Enhancement-mode • 4-V gate drive voltage: VGE = 4.0 V (min) (@IC = 200 A) • Peak collector current: IC = 200 A (max)	Original	GT10G131	PDF
10g131 Abstract: GT10G131 RG110 ic 3 51 2A Text: 10G131 東芝伝導度変調型電界効果トランジスタシリコンNチャネルIGBT 10G131 ○ 直列式自動調光ストロボ用 • 薄型面実装外囲器です。単位: mm : 樹脂厚み 1.5 ± 0.2 mm • 第 5 世代トレンチゲート構造品です。	Original	GT10G131 20070701-JA 10g131 GT10G131 RG110 ic 3 51 2A	PDF
10G131 Abstract: No abstract text available Text: 10G131 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT 10G131 Strobe Flash Applications Unit: mm • 5th generation trench gate structure IGBT • Enhancement-mode • 4-V gate drive voltage: VGE = 4.0 V (min) (@IC = 200 A) • Peak collector current: IC = 200 A (max)	Original	GT10G131 10G131	PDF
Untitled Abstract: No abstract text available Text: 10G131 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT 10G131 Strobe Flash Applications Unit: mm • 5th generation trench gate structure IGBT • Enhancement-mode • 4-V gate drive voltage: VGE = 4.0 V (min) (@IC = 200 A) • Peak collector current: IC = 200 A (max)	Original	GT10G131	PDF
GT10G131 Abstract: 10G131 Text: 10G131 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT 10G131 Strobe Flash Applications Unit: mm • Supplied in compact and thin package requires only a small mounting area • 5th generation trench gate structure IGBT • Enhancement-mode	Original	GT10G131 GT10G131 10G131	PDF
10g131 Abstract: ic MARKING QG GT10G131 TOSHIBA IGBT DATA BOOK NOR GATE IC A3170 Text: 10G131 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT 10G131 Unit: mm Strobe Flash Applications • Supplied in compact and thin package requires only a small mounting area • 5th generation trench gate structure IGBT • Enhancement-mode	Original	GT10G131 10g131 ic MARKING QG GT10G131 TOSHIBA IGBT DATA BOOK NOR GATE IC A3170	PDF