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    10J303 Search Results

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    10J303 Price and Stock

    Cal-Chip Electronics RM10J303CT

    RES SMD 30K OHM 5% 1/8W 0805
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    DigiKey RM10J303CT Reel 5,000
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    Bristol Electronics RM10J303CT 18,358
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    RM10J303CT 4,495
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    Component Electronics, Inc RM10J303CT 4,800
    • 1 $0.23
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    NIC Components Corp NRC-AS10J303TRF

    SULFUR RESISTANT THICK FILM CHIP RESISTORS - Tape and Reel (Alt: NRC-AS10J303TRF)
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    Avnet Americas NRC-AS10J303TRF Reel 16 Weeks 5,000
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    NIC Components Corp NRC10J303TRF

    Res Thick Film 0805 30K Ohm 5% 1/8W ?200ppm/?C Molded SMD SMD Paper T/R - Tape and Reel (Alt: NRC10J303TRF)
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    Avnet Americas NRC10J303TRF Reel 5,000
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    Bristol Electronics NRC10J303TRF 5,309
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    Chip1Stop NRC10J303TRF 85,000
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    NIC Components Corp NRCPS10J303TRQYF

    Res Anti-Surge Thick Film 0805 30k Ohm 5% 1/3W ?100ppm/?C Molded Paper T/R - Tape and Reel (Alt: NRCPS10J303TRQYF)
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    Avnet Americas NRCPS10J303TRQYF Reel 26 Weeks 5,000
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    NIC Components Corp NRC10J303TR10F

    Res Thick Film 0805 30K Ohm 5% 1/8W ?200ppm/?C Molded SMD SMD Paper T/R - Tape and Reel (Alt: NRC10J303TR10F)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas NRC10J303TR10F Reel 16 Weeks 100,000
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    Find more 10J303 price and stock on Findchips.com

    10J303 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    10j303

    Abstract: 2-10R1C GT10J303
    Text: 10J303 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT 10J303 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS Unit: mm z Third-generation IGBT z Enhancement mode type z High speed z Low saturation voltage : tf = 0.30 s Max. (IC = 10A)


    Original     		PDF GT10J303 10j303 2-10R1C GT10J303

    10j303

    Abstract: No abstract text available
    Text: 10J303 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT 10J303 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS Unit: mm z Third-generation IGBT z Enhancement mode type z High speed z Low saturation voltage : tf = 0.30µs Max. (IC = 10A)


    Original     		PDF GT10J303 10j303

    10j303

    Abstract: IGBT Guide GT10J303 Toshiba c
    Text: 10J303 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT 10J303 Unit: mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS Third-generation IGBT Enhancement mode type High speed Low saturation voltage : tf = 0.30µs Max. (IC = 10A)


    Original     		PDF GT10J303 10j303 IGBT Guide GT10J303 Toshiba c