3SK103
Abstract: 3SK104V 3SK104
Text: - 232 - - 0 S F E T ii a & Ä J5 9 3 SK 1 0 3 B ü È ö 'S fé m 5 Efètt * « 'J ' mm 10. 00 15.00 Vg2s =3V, i d=10jiA, f =1kHz ft * « * 15 i 10 lY f s l a S CATV 3 ' S K - 9 Is t IF M o -b I o(mA) 35 Ciss(pF) 2.00 Vg2s=3V,Io-lOmA, f=lMHz » y - m m v t s iF is fs s io
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3SK103
10jiA,
900MHz
1D-10mA,
510MHz
200MHz,
3SK104V
3SK104
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ccd diode
Abstract: QS74LCX16823
Text: [fl q^ity HighSpeed CMOS3.3V 18-Bit Register qs74lcxi6823 S e m i c o n d u c t o r ,In c . DESCRIPTION FEATURES/BENEFITS • 5V tolerant inputs and outputs • 10jiA lCCQ quiescent power supply current • • • • • • • Hot insertable 2.0V-3.6V Vcc supply operation
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18-Bit
qs74lcxi6823
10jiA
500mA
56-pin
QS74LCX16823
MDSL-00191-00
QS74LCX16823
ccd diode
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Untitled
Abstract: No abstract text available
Text: Quality High Speed CMOS 3.3V 18-Bit Registered Transceivers t S emiconductor , I nc . qs 74l c x i 66oi FEATURES/BENEFITS DESCRIPTION • 5V tolerant inputs and outputs • Industry standard pinouts • 10jiA lCCQ quiescent power supply current • Hot insertable
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18-Bit
10jiA
500mA
56-pin
LCX16601
DSL-00238-00
QS74LCX16601
QS74FCT
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Untitled
Abstract: No abstract text available
Text: Quality S emiconductor , I nc . Highspeed CMOS3.3V 18-Bit Registered Transceivers QS74LCX16600 FEATURES/BENEFITS DESCRIPTION • 5V tolerant inputs and outputs • Industry standard pinouts • 10jiA ICC q quiescent power supply current • Hot insertable
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18-Bit
QS74LCX16600
10jiA
500mA
56-pin
LCX16600
DSL-00237-02
QS74LCX16600
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628A
Abstract: 15A10
Text: Bridge Rectifiers, cenerai Purpose Continued vf m a x @ if Ir MA X VRRM 1.1V @ 2.0A 1.1V @ 3.14A 1.1V @ 1.5A 1.1V @ 3.0A 1.1V @ 6.28A 1.1V @ 3.0A 10jiA 10fxA 10(iA 10nA 10(iA 10(xA 175 Centrar Sem iconducto r Corp.
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10jiA
10fxA
628A
15A10
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Untitled
Abstract: No abstract text available
Text: Advanced IR F W /I8 4 0 A P o w e r M O SFET FEATURES BVdss = 500 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ^DS on ~ ■ Lower Input Capacitance lD = 8 A ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current ; 10jiA (M ax.) @ VOS = 500V
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10jiA
32ing
IRFW/I840A
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a1t diode
Abstract: No abstract text available
Text: Advanced Power MOSFET S F W FEATURES • ■ ■ ■ ■ ■ /I9 6 4 4 BVdss = -250 V Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10jiA M ax. @ VOS= -250V
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10jiA
-250V
DD40127
SFW/I9644
a1t diode
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Untitled
Abstract: No abstract text available
Text: calocflc CO RPO RATIO N \J CLM185-1.2/CLM285-1.2/CLM385-1.2 FEATURES • • • • ORDERING INFORMATION Tight Tolerance. 1%-2% Operating Current. 10jiA - 20mA Dynamic Impedance. m
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CLM185-1
2/CLM285-1
2/CLM385-1
10jiA
CLM185T1
CLM285T1
CLM285Y1
CLM385T1
CLM385N1
CLM385Y1
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Untitled
Abstract: No abstract text available
Text: íf ! H A R R ICL7663S IS S E M I C O N D U C T O R CMOS Programmable Micropower Positive Voltage Regulator March1994 Features Description • Guaranteed 10jiA Maximum Quiescent Current Over All Temperature Ranges The ICL7663S Super Programmable Micropower Voltage
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ICL7663S
10jiA
ICL7663S
ICL7663B
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320E2
Abstract: No abstract text available
Text: ¡g qu autv Q ualh High Speed CMOS 3.3V QS74LCX16827 20-Bit Buffer S emiconductor . I nc . FEATURES/BENEFITS • • • • • • • • • • • • • DESCRIPTION 5V tolerant inputs and outputs 10jiA lCCQ quiescent power supply current Hot insertable
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QS74LCX16827
20-Bit
10jiA
500mA
56-pin
QS74LCX16827
MDSL-00192-01
320E2
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UM61L3232AF-7
Abstract: UM61L3232A um61 UM61L UM61L3232 UM61L3232AF-8 UM61-l-3232af
Text: UM61L3232A Series PRELIMINARY 32K X 32 Bit Synchronous High Speed SRAM with Burst Counter and Pipelined Data Output Features Fast access times: 5/6/7/8 ns Single +3.3V+10% or +3.3V-5% power supply Synchronous burst function Individual Byte W rite control and Global Write
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UM61L3232A
100-pin
10jiA.
UM61L3232AF-5
UM61L3232AE-5
UM61L3232AF-6
UM61L3232AE-6
UM61L3232AF-7
UM61L3232AE-7
um61
UM61L
UM61L3232
UM61L3232AF-8
UM61-l-3232af
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DN2620
Abstract: No abstract text available
Text: DN2620 DN2624 Advanced Information N-Channel Depletion-Mode Vertical DMOS FETs Ordering Information Order Num ber / Package BV dsx / B^DGX ^DS ON Idss (max) (min) TO-92 DICE 200V 4.0Q 600mA DN2620N3 DN2620ND 240V 4.0Q 600mA DN2624N3 DN2624ND Advanced DMOS Technology
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DN2620
DN2624
600mA
600mA
DN2620N3
DN2624N3
DN2620ND
DN2624ND
300mA,
300jxs
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C1026
Abstract: 1026 soic-8 IC 1026 X9116WM8I-2.7T1
Text: ¡eluom Semiconductor, Inc. PRELIMINARY INFORMATION TC1026 LINEAR BUILDING BLOCK - LOW POWER COMPARATOR WITH OP AMP AND VOLTAGE REFERENCE FEATURES GENERAL DESCRIPTION • T he T C 1026 is a m ixed-function device com bining a general purpose opam p, co m p a ra tor and voltage reference
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TC1026
100pA
10jiA
TC1026CUA
TC1026EUA
TC1026CPA
TC1026EPA
TC1026COA
TC1Q26EOA
TC1026-01
C1026
1026 soic-8
IC 1026
X9116WM8I-2.7T1
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Untitled
Abstract: No abstract text available
Text: Supertax inc. DN2624 N-Channel Depletion-Mode Vertical DMOS FETs Ordering Information Order Number / Package BVdsx/ R d s o n b v dgx (max) (min) TO-92 Die 240V 4.0£2 600mA DN2624N3 DN2624ND •d s s Advanced DMOS Technology Features □ High input impedance
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DN2624
600mA
DN2624N3
DN2624ND
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OD-669
Abstract: AT25 diode b33
Text: OPTO DIODE CORP SSE D • □□□□124 7T7 ■ O HIGH-POWER GaAIAs ILLUMINATOR P D fj» OD-669 FEATURES • High reliability LPE GaAIAs IRLEDs • Highest power output available • 880nm peak emission • Nine chips connected in series • TO-66 header with BeO substrates for
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OD-669
880nm
OD-669
AT25
diode b33
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87CS2
Abstract: 8052 microcontroller philips kje t2 80C32 Philips P80C32 P80C52EBA P87C52GFFFA KJe ro 80C51 80C52
Text: SbE ]> PHILIPS INTERNATIONAL m 711QöSb 003Ö7ÖÖ 775 » P H I N Product specincation Philips Semiconductors Microcontroller Products 80C32/80C52/87C52 CMOS single-chip 8-bit microcontroller T FEATURES • 80C51 based architecture In addition, the 8XC52 has two software
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80C32/80C52/87C52
80C32/80C52/87C52
8XC52
80C52)
87C52)
16-bit
48tcuCL
48tCLCL
87CS2
8052 microcontroller philips
kje t2
80C32 Philips
P80C32
P80C52EBA
P87C52GFFFA
KJe ro
80C51
80C52
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TPS2010
Abstract: TPS2010D TPS2010PWLE TPS2011 TPS2011D TPS2012 TPS2013
Text: TPS2010, TPS2011, TPS2012, TPS2013 POWER-DISTRIBUTION SWITCHES SLVS097 - DECEMBER 1994 D PACKAGE TOP VIEW 95-m a Max (5.5-V Input) High-Side MOSFET Switch With Logic Compatible Enable Input Short-Circuit and Thermal Protection GND [ 1 IN [ 2 IN [ 3 IN [ 4
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TPS2010,
TPS2011,
TPS2012,
TPS2013
SLVS097
95-mn
TPS2010;
TPS2011;
TPS2012;
TPS2013
TPS2010
TPS2010D
TPS2010PWLE
TPS2011
TPS2011D
TPS2012
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DK52
Abstract: No abstract text available
Text: IS0809 B U R R - B R O W N Isolated 16-Bit Sampling ANALOG-TO-DIGITAL CONVERTER FEATURES DESCRIPTION • 100kHz SAMPLING RATE The IS0809 is a low-power isolated sampling ADC using state-of-the-art CMOS structures and high volt age capacitors. The IS0809 contains a complete 16-bit
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IS0809
16-Bit
100kHz
IS0809
16-bit
1500Vrms
28-pin
17313bS
DK52
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Untitled
Abstract: No abstract text available
Text: P-Channel Enhancement Mode MOSFET General Purpose Amplifier calocflc CORPORATION v IT1700 ABSOLUTE MAXIMUM RATINGS Ta = 25°C unless otherwise specified FEATURES • • • • • Low ON-Resistance High Gain Low Noise Voltage High Input Impedance Low Leakage
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IT1700
-10mA
300ms
MM322
0D0CH51
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Untitled
Abstract: No abstract text available
Text: 2N7002W N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package SOT-323 - * \ , h -A TO P VIEW B C 1 Mechanical Data_
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2N7002W
OT-323
OT-323,
MIL-STD-202,
DS30099
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Untitled
Abstract: No abstract text available
Text: 2SK2980 Silicon N Channel MOS FET High Speed Power Switching HITACHI ADE-208-571B Z 3rd. Edition Jun 1998 Features • Low on-resistance RDS(on) = 0. 2 ß typ. (VGS = 4 V, ID= 500 mA) • 2.5V gate drive devices. • Small package (MPAK) Outline 2SK2980
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2SK2980
ADE-208-571B
du601
D-85622
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Untitled
Abstract: No abstract text available
Text: Bridge Rectifiers, General Purpose Single Phase, Full Wave 1.0 to 35 Amperes 100 to 1000 Volts 1.5 1.0 10 AMPS @TA(°C) 2.0 50 50 75 50 50 55 50 50 30 50 50 60 @ Tc (°C) IFSM (AMPS) Jm 1 # CASE DIP SMDIP CASE B-M CASE A CASE B-M CASE A 3N247-M CBR1-010
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3N247-M
CBR1-010
CBR1-L010M
CBR2-010
CBR1-D010
CBR1-D020
CBR1-D020S
3N248-M
CBR1-020
CBR1-L020M
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Untitled
Abstract: No abstract text available
Text: AN AL OG « F VI CF X INC 51E D A N A LO G D E V IC E S Dual PNP Transistor T-H3-2£r MAT-03 FEATURES Dual Matched PNP Transistor Low Offset Voltage. . Low Noise. 1nV/VHz @ 1kHz Max High G ain . .
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MAT-03
DAC-08,
992mA
992rnA,
008mA
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Untitled
Abstract: No abstract text available
Text: Or, Call Customer Service at 1-8B0-548-S132 USA Only Optically-Coupled Linear ISOLATION AMPLIFIER FEATURES APPLICATIONS • EASY TO USE, SIMILAR TO AN OP AMP Vqu^Im = Rf, Current Input Vom/V* = FVR«, Voltage Input • 100% TESTED FOR BREAKDOWN: 750V Continuous Isolation Voltage
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1-8B0-548-S132
40V/60HZ
60kHz
18-PIN
IS0100
DD25257
17313bS
IS0100
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