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    ATGBICS 100G-QSFP28-LR4-10KM-BR-C

    Compatible QSFP28 100G
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    DigiKey 100G-QSFP28-LR4-10KM-BR-C Tray 6,632 1
    • 1 $455
    • 10 $455
    • 100 $432.3
    • 1000 $386.8
    • 10000 $386.8
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    Karl Kruse GmbH & Co KG 100G-QSFP28-LR4-10KM-BR-C 58
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    Tripp Lite SU10KMBPKX

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    DigiKey SU10KMBPKX Bulk 20
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    • 100 $3336.859
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    Newark SU10KMBPKX Bulk 1
    • 1 $4278.72
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    Tripp Lite SU210KMBPKX

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    Newark SU210KMBPKX Bulk 1
    • 1 $8905.9
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    FAG Bearings 239/710-K-MB

    Spherical Roller Bearing, 710MM ID, 950MM OD, 180MM Width | FAG Bearings (Schaeffler) 239/710-K-MB
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    RS 239/710-K-MB Bulk 2 Weeks 1
    • 1 $93272.06
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    FAG Bearings 239/710-K-MB-C3

    Spherical Roller Bearing, 710MM ID, 950MM OD, 180MM Width | FAG Bearings (Schaeffler) 239/710-K-MB-C3
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    RS 239/710-K-MB-C3 Bulk 2 Weeks 1
    • 1 $93272.07
    • 10 $90402.16
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    10KMB Datasheets Context Search

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    TP 152N

    Abstract: CI23 k7315 2A mosfet igbt driver stage as256words CY7C123
    Text: MbE D CYPRESS SEMICONDUCTOR E3 2 S 0 ciL.iJ2 D D O b B I R 7 C l C Y P CY7C123 CYPRESS SEMICONDUCTOR Functional Description 256 x 4 static RAM for control store in high-speed computers CMOS foroptimum speed/power High speed — 7 ns commercial — 10 ns (military)


    OCR Scan     		PDF QQQta31R CY7C123 300-mil CY7C123 as256words CY7C123-12LC CY7C123â 12DMB 12LMB TP 152N CI23 k7315 2A mosfet igbt driver stage

    12L10

    Abstract: 16L6 20L10 20L8 PLD20G10C 12DC
    Text: 4bE SEMICONDUCTOR SSÔTbtS D OGGbTMM PRELIMINARY CYPRESS SEMICONDUCTOR Features • Ultra high speed supports today’s and tomorrow’s fastest microprocessors — tpD = 7.5 ns — tsu = 3 ns — fM A X = 1 0 5 M tte • Reduced ground bounce and under­


    OCR Scan     		PDF PLD20G10C 24-Pin 10SMHZ 20L10, 12L10 PLD20G10C- 10KMB 10LMB 16L6 20L10 20L8 PLD20G10C 12DC

    Untitled

    Abstract: No abstract text available
    Text: PAL22V10C _ PAL22VP10C Universal PAL Device SEMICONDUCTOR Features • • Ultra high speed supports today’s and tomorrow’s fastest microprocessors 10 user>programmable output macrocells — Output polarity control — Registered or combinatorial


    OCR Scan     		PDF PAL22V10C PAL22VP10C PAL22VP10C) 28-Pin PAL22VP10CM 28-Square PAL22VP10CM 15KMB 12YMB

    Untitled

    Abstract: No abstract text available
    Text: CY101E484 CY10E484 CY100E484 .1 ^ CYPRESS SEMICONDUCTOR Features • 4096 x 4-bit organization • Ultra high speed/standard power — tAA = 4 ,5 ns — I e e ~ 320 mA • Low-power version — tAA = 7,10 ns — Iee = 200 mA • Both 10KH/10K- and 100K-compatible I/O versions


    OCR Scan     		PDF CY101E484 CY10E484 CY100E484 10KH/10K- 100K-compatible CY101E484, CY10E484, CY100E484 CY10E484â

    Untitled

    Abstract: No abstract text available
    Text: CYPRESS SEMICONDUCTOR Flash Erasable, Reprogrammable CMOS PAL Device DIP, LCC, and PLCC available — 7.5 ns commercial version 5 ns tco 5 ns t§ 7.5 ns tpo 133-MHz state machine — 10 ns military and industrial ver­ sions 6 ns tco 6 ns tg 10 ns tpo 110-MHz state machine


    OCR Scan     		PDF 133-MHz 110-MHz 15-ns 25-ns 28-Square 24-Lead PALC22V10Dâ PALC22V10D 24-Lead 300-Mil)

    Untitled

    Abstract: No abstract text available
    Text: CY10E494 CY100E494 CY101E494 CYPRESS SEMICONDUCTOR 16,384x4 ECL Static RAM Features • Capable o f w ithstanding >2001V E SD • 16,384 x 4 bits organization • Open emitter output for ease of memory expansion • Ultra high speed/standard power • Industry-standard pinout


    OCR Scan     		PDF CY10E494 CY100E494 CY101E494 384x4 CY101E494 CY10E494L--12VC 494-10D 10E494--10KMB 10E494--12DM 10E494--12KMB

    Untitled

    Abstract: No abstract text available
    Text: PLD20G10C ¡5 r CYPRESS SEMICONDUCTOR Features • • Ultra high speed supports today’s and tomorrow’s fastest microprocessors — tpD = 7.5 ns Generic 24-Pin PAL Device 10 user-programmable output macrocells — Output polarity control U sing B iC M O S process and Ti-W fuses,


    OCR Scan     		PDF PLD20G10C 24-Pin 300-M 24-Lead 300-Mil) 24-Lead 28-Square

    12L10

    Abstract: 16L6 18L4 20L10 20L8
    Text: PLD20G10C i f CYPR ESS Features • 10 user-programmable output macrocells — Output polarity control — Registered or combinatorial operation — Pin or product term output enable control • Ultra high speed supports today’s and tomorrow’s fastest microprocessors


    OCR Scan     		PDF PLD20G10C 24-Pin 20L10, 12L10 PLD20G10C-12DMB 24-Lead 300-Mil) PLD20G10C 12KMB 24-Lead 16L6 18L4 20L10 20L8

    L22V10C-10PC

    Abstract: No abstract text available
    Text: PAL22V10C PAL22VP10C y CYPRESS Universal PAL Device B iC M O S process and Ti-W fuses, the PAL22V10C and PAL22VP10C use the fam iliarsum -of-products A N D -O R logic structure and a new concept, the program ­ m able m acrocell. • 10 user-programmable output


    OCR Scan     		PDF PAL22VP10C) PAL22V10C PAL22VP10C PAL22VP10C 300-M 28-Square 28-Pin 24-Lead L22V10C-10PC

    Untitled

    Abstract: No abstract text available
    Text: CY101E484 CY10E484 CY100E484 CYPRESS SEMICONDUCTOR Features • Open emitter output for ease of memory expansion • 4096 x 4-bit organization • 4K x 4 ECL Static RAM • Industry-standard pinout Ultra high speed/standard power — t AA = 4, 5 ns Functional Description


    OCR Scan     		PDF CY101E484 CY10E484 CY100E484 28-pin 400-M 484--5D 484--5KC 10E484 10E484--5D 10E484--5KM

    28D03

    Abstract: CY10E484 HT12 WA 934 CY10E484L CY10E484L7JC decoder HT12
    Text: CY101E484 CY10E484 CY100E484 CYPRESS SEMICONDUCTOR 4K x 4 ECL Static RAM • Open emitter output for ease of memory expansion • Industry-standard pinout Features • 4096 x 4-bit organization • Ultra high speed/standard power Functional Description — U a = 4, 5 n s


    OCR Scan     		PDF CY101E484 CY10E484 CY100E484 10KH/10K- CY101E484, CY10E484, 10KH-/10K-compatible. 28D03 HT12 WA 934 CY10E484L CY10E484L7JC decoder HT12

    Untitled

    Abstract: No abstract text available
    Text: CY101E484 CY10E484 CY100E484 r CYPRESS SEMICONDUCTOR Features 4K x 4 ECL Static RAM • Open emitter output for ease o f memory expansion 4096 x 4-bit organization • Industry-standard pinout Ultra high speed/standard power — tAA = 4, 5 ns — Ie e = 320 III A


    OCR Scan     		PDF CY101E484 CY10E484 CY100E484 10KH/10K- 100K-compatibie 400-M 10E484--5D 484--5YC 10E484 10E484--5KM

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY CYPRESS SEMICONDUCTOR • Ultra high speed supports today’s and tomorrow’s fastest microprocessors — tpD = 7.5 ns — tsi = 3 ns — fMAX = 105MHz • Reduced ground bounce and under­ shoot • PLCC and LCC packages with addi­ tional V cc and Vss pins for lowest


    OCR Scan     		PDF 105MHz 20L10, 12L10 24-Pin de10Câ 10C-12DM PLD20G10Câ 12KMB PLD20G10C-12LM 12YMB

    236s2

    Abstract: No abstract text available
    Text: PALCE22V10 F CYPRESS Features 3 ns t$ 5 ns tpD 181-MHz state machine • Low power — 90 mA max. commercial 10 11s Functional Description — 10 ns m ilitai? and industrial ver­ sions 7 n stc o 6 n s ts 10 n s tpD 110-MHz state m achine — 130 mA max. commercial (5 ns)


    OCR Scan     		PDF PALCE22V10 181-MHz 110-MHz 15-ns 25-ns 24-Lead 300-Mil) PALCE22V10â 25KMB 236s2

    10DC IR 3 PINS

    Abstract: No abstract text available
    Text: PAL22V10C PAL22VP10C CYPRESS SEMICONDUCTOR • Ultra high speed supports today's and tomorrow's fastest microprocessors — tp j * user-programmable output macrocells — Output polarity control BiCMOS process and Ti-W fuses, the PAL22V10C and PAL22VP10C use the


    OCR Scan     		PDF PAL22V10C PAL22VP10C PAL22VP10C PAL22VP10CM 22VP10CM --15DMB 10DC IR 3 PINS

    Untitled

    Abstract: No abstract text available
    Text: _ PALC22V10D SEMICONDUCTOR Flash Erasable, Reprogrammable CMOS PAL Device • Advanced second-generation PAL ar­ chitecture • Low power — 90 mA max. commercial 10 ns — 130 mA max. commercial (7.5 ns) • CMOS Flash EPROM technology for


    OCR Scan     		PDF PALC22V10D 133-MHz 300-Mil) 24-Lead 28-Lead 24-Lead 28-Square

    Untitled

    Abstract: No abstract text available
    Text: PLD20G10C CYPRESS SEMICONDUCTOR Features • Ultra high speed supports today’s and tomorrow’s fastest microprocessors — tpD —7.5 ns — tsu = 3 ns — f\lAX = 105 MHz • Reduced ground bounce and under­ shoot • PLCC and LCC packages with addi­


    OCR Scan     		PDF PLD20G10C 20L10, 12L10 24-Pin 24-Lead 300-Mil) 28-Lead

    22V10C

    Abstract: PAL22V10C-7DC
    Text: — . _ PAL22V10C _ PAL22VP10C SEMICONDUCTOR Features • Ultra high speed supports today’s and tomorrow’s fastest microprocessors — tpD = 6 ns — tsu = 3 ns — fMAX = 117 MHz • Reduced ground bounce and under­ shoot • PLCC and LCC packages with addi­


    OCR Scan     		PDF PAL22V10C PAL22VP10C PAL22V10C PAL22VP10C PAL22VP10C--12DC PAL22VP10C-12JC 22V10C PAL22V10C-7DC

    22V10D-10

    Abstract: CERAMIC LEADLESS CHIP CARRIER 22V10D 238Q PALC22V10D PALCE22V10
    Text: For new designs, please refer to the PALCE22V10. m w CYPRESS PALC22V10D Flash Erasable, Reprogrammable CMOS PAL Device Features DIP, L C C , an d PLC C available • A dvanced secon d -gen eration PAL ar­ chitectu re — 7.5 n s com m ercial v ersion 5 n s tCo


    OCR Scan     		PDF PALCE22V10. PALC22V10D 133-MHz 24-Lead 300-Mil) PALC22V10Dâ 28-Lead 22V10D-10 CERAMIC LEADLESS CHIP CARRIER 22V10D 238Q PALC22V10D PALCE22V10

    Untitled

    Abstract: No abstract text available
    Text: V CYPRESS Features PALC22V10D Flash Erasable, Reprogrammable CMOS PAL Device — Proven Flash EPROM technology • DIP, LCC, and PLCC available — 7 J ns commercial version • Advanced second-generation PAL ar­ chitecture • Low power — 90 mA max. commercial 10 ns


    OCR Scan     		PDF PALC22V10D 133-MHz 28-Square 24-Lead PALC22V10D- 28-Lead PALC22V10Dâ 24-Lead 300-Mil) PALC22V10D

    Untitled

    Abstract: No abstract text available
    Text: CY7C123 CYPRESS SEMICONDUCTOR Features Functional Description • 256 x 4 static RAM for control store in high-speed computers • CMOS for optimum speed/power • High speed — 7 ns commercial — 10 ns (military) • Low power — 660 mW (commercial)


    OCR Scan     		PDF CY7C123 300-mil CY7C123 256words CY7C123â

    PAL22

    Abstract: No abstract text available
    Text: PAL22V10C PAL22VP10C CYPRESS SEMICONDUCTOR Universal PAL Device BiCMOS process and Ti-W fuses, the PAL22V10C and PAL22VP10C use the familiar sum-of-products AND-OR log­ ic structure and a new concept, the pro­ grammable macrocell. • 10 user-programmable output


    OCR Scan     		PDF PAL22V10C PAL22VP10C PAL22V10C PAL22VP10C L22VP10CMâ 15KMB PAL22VP10CM 15LMB PAL22

    AH 101K

    Abstract: sd 484 ip
    Text: CY101E484 CY10E484 CY100E484 CYPRESS SEMICONDUCTOR W Features • 40% x 4-blt organization • U ltra high speed/standard power — tAA = 4 , 5 ns — I ee s 320 mA • Low-power version — ‘ a a = 7, 10 ns — I ee = 200 mA • Both 10KH/10K- and 100K-compatible I/O versions


    OCR Scan     		PDF CY101E484 CY10E484 CY100E484 28-pin 10-ns CY10E484-4DC CY10E484-4RC CY10E484-- CY10E484-5KC AH 101K sd 484 ip