C2653
Abstract: C2651 C2657 C2658 C2659 C2652 7c26 C2694 C2695 C265
Text: 1CY 7C26 5 CY7C265 8K x 8 Registered PROM Features If the asynchronous enable E is being used, the outputs may be disabled at any time by switching the enable to a logic HIGH, and may be returned to the active state by switching the enable to a logic LOW.
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CY7C265
7C265W)
28-pin,
300-mil
C2653
C2651
C2657
C2658
C2659
C2652
7c26
C2694
C2695
C265
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CY7C265
Abstract: CY7C265-25QMB CY7C265-25WMB
Text: 65 CY7C265 8K x 8 Registered PROM Features are enabled. One pin on the CY7C265 is programmed to perform either the enable or the initialize function. • CMOS for optimum speed/power • High speed commercial and military — 15 ns address set-up If the asynchronous enable (E) is being used, the outputs may
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CY7C265
CY7C265
7C265W)
CY7C265-25QMB
CY7C265-25WMB
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Untitled
Abstract: No abstract text available
Text: CY7C265 8K x 8 Registered PROM Features are enabled. One pin on the CY7C265 is programmed to perform either the enable or the initialize function. • CMOS for optimum speed/power • High speed Commercial If the asynchronous enable (E) is being used, the outputs may
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CY7C265
CY7C265W)
28-pin,
300-mil
CY7C265
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CY7C265
Abstract: CY7C265-15JC CY7C265-15WC CY7C265W
Text: 65 CY7C265 8K x 8 Registered PROM Features If the asynchronous enable E is being used, the outputs may be disabled at any time by switching the enable to a logic HIGH, and may be returned to the active state by switching the enable to a logic LOW. • CMOS for optimum speed/power
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CY7C265
CY7C265W)
28-pin,
300-mil
CY7C265
CY7C265-15JC
CY7C265-15WC
CY7C265W
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7C265-25
Abstract: CY7C265 CY7C265-15JC CY7C265-15WC
Text: CY7C265 8K x 8 Registered PROM Features are enabled. One pin on the CY7C265 is programmed to perform either the enable or the initialize function. • CMOS for optimum speed/power • High speed Commercial If the asynchronous enable (E) is being used, the outputs may
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CY7C265
CY7C265
CY7C265W)
7C265-25
CY7C265-15JC
CY7C265-15WC
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Untitled
Abstract: No abstract text available
Text: TOSHIBA SG2000R24, SG2000U24 SG2000W24, SG2000EX24 Unit in mm Chopper, Inverter Application 2 - ¡*3.S±0.2 DEPTH • Repetitive Peak Off-State Voltage: v drm= • R.M.S. On-State Current: k RMS =1 0 5 0 A • Peak Turn-Off Current: 130°. 1600, 1800, 2500V
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SG2000R24,
SG2000U24
SG2000W24,
SG2000EX24
SG2000R24
SG2000W24
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Untitled
Abstract: No abstract text available
Text: TOSHIBA SG4500GXH25 TENTATIVE T O SH IBA GATE TURN-OFF THYRISTOR SG4500GXH25 INVERTER APPLICATIO N Repetitive Peak Off-State Voltage : V n^ivr—4500V Note 1 Repetitive Peak Reverse Voltage : V r r ]V[ = 4000V R.M.S On-State C urrent : I t (RMS) ~ 3000A
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SG4500GXH25
10msW
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SG1500GXH25
Abstract: RMA45
Text: TO SHIBA TENTATIVE SG1500GXH25 TOSHIBA GATE TURN-OFF THYRISTOR SG1500GXH25 Unit in mm INVERTER APPLICATION Vd RM—4500V Note 1 Repetitive Peak Reverse Voltage : V rrm = 4000V R.M.S On-State Current : i T(RMS) = 750A Peak Turn-Off Current : ^TGQM —1500A
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SG1500GXH25
10msWidth
1150C
300mA
SG1500GXH25
RMA45
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SG3000JXH25
Abstract: No abstract text available
Text: TOSHIBA TENTATIVE SG3000JXH25 TOSHIBA GATE TURN-OFF THYRISTOR SG3000JXH25 Unit in mm INVERTER APPLICATION Repetitive Peak Off-State Voltage VDRM = 6500V Note 1 Repetitive Peak Reverse Voltage : VRRM = 6500V R.M.S On-State Current • :T (RMS)= 800À Peak Turn-Off Current
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SG3000JXH25
--3000A
10msWidth
SG3000JXH25
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SG2200GXH24
Abstract: SG2200FXF24 thyristor 2200A
Text: TOSHIBA SG2200FXF24,SG2200GXH24 TOSHIBA GATE TURN-OFF THYRISTOR SG2200FXF24, SG2200GXH24 Unit in mm INVERTER APPLICATION 2 - 0 3 . 5 + 0.2 DEPTH 2.1 ±0 .4 Repetitive Peak Off-State Voltage : V]}R]y[ = 4500V, 3300V R.M.S On-State Current : It RMS = 1000A
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SG2200FXF24
SG2200GXH24
SG2200FXF24,
2200a
00A//Â
000V//Â
10ms-Width
SG2200GXH24
thyristor 2200A
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sgr3000gxh28
Abstract: 4500V 900A
Text: TO SHIBA SGR3000GXH28 TOSHIBA GATE TURN-OFF THYRISTOR REVERSE CONDUCTING TYPE SGR3000GXH28 Unit in mm INVERTER APPLICATION • Repetitive Peak Off-State Voltage : VDRM“ 4500V Note 1 • R.M.S On-State Current : lT(RMS) = 1200A(Tf=77°C) • R.M.S Reverse Current ; I r (RMS) —900A (Tf=77°C)
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SGR3000GXH28
--900A
sgr3000gxh28
4500V 900A
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C2653
Abstract: C2659 C2652 CY7C265 SAAB
Text: CYPRESS SEMICO NDUCTOR 4bE D B 250^2 Q D 0 b 7 ci3 5 E3C YP ^ V - ^ - v b - z r ] mSÈÊÆ CYPRESS s? SEMICONDUCTOR CY7C265 8192 x 8 Registered PROM Features Functional Description • CMOS for optimum speed/power • Highspeed — 15psm ax. set-up — 12 ns clock to output
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CY7C265
15psmax.
7C265W)
28-pin,
300-mil
CY7C265
CY7C265-50PC
-50WC
CY7C265-50DMB
C2653
C2659
C2652
SAAB
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Untitled
Abstract: No abstract text available
Text: CY7C265 CYPRESS SEMICONDUCTOR Features • CMOS for optimum speed/power • High speed commercial and military — 15 ns max. set-up — 1 2 ns clock to output • Low power — 660 mW (commercial) — 770 mW (military) • On-chip edge-triggered registers
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CY7C265
7C265W)
28-pin,
300-mil
CY7C265
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C2658
Abstract: C2653 C2653 H
Text: CY7C265 CYPRESS SEMICONDUCTOR Features • CMOS for optimum speed/power • High speed commercial and military — 15 ns max. set-up — 12 ns clock to output • Low power — 660 mW (commercial) — 770 mW (military) • On-chip edge-triggered registers
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CY7C265
7C265W)
28-pin,
300-mil
C2658
C2653
C2653 H
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SGRB000GXH26
Abstract: 4500V 900A GTO thyristor 4500V 4000A
Text: SEMICONDUCTOR TOSHIBA TECHNICAL DATA TOSHIBA GATE TURN-OFF THYRISTOR SGRB000GXH26 REVERSE CONDUCTING TYPE SGR3000GXH26 Unit in mm INVERTER APPLICATION Repetitive Peak Off-State Voltage V d RM = 4500V (Note 1) R.M.S On-State Current lT(RMS) = 1200A(Tf=77°C)
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SGRB000GXH26
SGR3000GXH26)
SGRB000GXH26
4500V 900A
GTO thyristor 4500V 4000A
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CY7C265
Abstract: No abstract text available
Text: CYPRESS SEMICONDUCTOR MOE D E3 2 5 6 ^ 2 0QQS2G4 7 Q ICYP 7 = ^ V 3 -2 S T CY7C265 ^ CYPRESS SEMICONDUCTOR 64K Registered PROM Features Functional Description • CMOS for optimum speed/power • High speed — IS ns max. set-up — 12 ns clock to output T he CY7C265 is a 64K registered PROM.
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00Q52G4
CY7C265
7C265W)
28-pin,
300-mil
CY7C265
additio7C265-50WC
5-50DMB
CY7C265-50WMB
CY7C265-50LMB
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C2657
Abstract: 8193rd
Text: p vp: v «*1 X X CY7C265 - 8K x 8 Registered PROM Features If the asynchronous enable E is being used, the outputs may be disabled at any tim e by switching the enable to a logic HIGH, and may be returned to the active state by switching the enable to a logic LOW.
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CY7C265
7C265W
28-pin,
300-m
C2657
8193rd
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Untitled
Abstract: No abstract text available
Text: _ CY7C265 SEMICONDUCTOR 64K Registered PROM Features Functional Description • CMOS for optimum speed/power T he CY7C265 is a 64K registered PROM. It is organized as 8,192 words by 8 bits wide, and has a pipeline output register. In addi
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CY7C265
7C265W)
28-pin,
300-m
synchrono265-40DC
CY7C265-40LC
CY7C265-40QC
CY7C265-40WC
CY7C265-50PC
CY7C265-50DC
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SG3000EX24
Abstract: Gate Turn-off Thyristor Thyristor 1000v Toshiba 750V 1600A
Text: SG3000EX24 TOSHIBA GATE TURN-OFF THYRISTOR SG3000EX24 SG3000EX24 INVERTER APPLICATION U n it in mm Repetitive Peak Off-State Voltage : V d r m = 2500V R.M.S On-State C urrent : It (RMS) = 1600A Peak Turn-O ff C urrent : It G Q M = 3000A C ritical Rate of Rise of On-State C urrent : d i/d t= 4 0 0 A //us
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SG3000EX24
SG3000EX24)
10ms-Width
SG3000EX24
Gate Turn-off Thyristor
Thyristor 1000v
Toshiba 750V 1600A
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TENTATIVE SG3000JX26G TOSHIBA GATE TURN-OFF THYRISTOR SG3000JX26G INVERTER APPLICATION Repetitive Peak Off-State Voltage V d RM = 6000V Note 1 Repetitive Peak Reverse Voltage : Vr r m =17V R.M.S On-State Current • It (RMS)= 1200À Peak Turn-Off Current
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SG3000JX26G
--3000A
10msWidth
300mA
-6000V,
--3000A,
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SG1500GXH25
Abstract: No abstract text available
Text: SG1500GXH25 TOSHIBA TENTATIVE TOSHIBA GATE TURN-OFF THYRISTOR SG 1500GXH25 INVERTER APPLICATION Repetitive Peak Off-State Voltage Repetitive Peak Reverse Voltage R.M.S On-State Current Peak Turn-Off Current Critical Rate of Rise of On-State Current Critical Rate of Rise of Off-State Voltage
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SG1500GXH25
1500GXH25
--200A
--1500A,
SG1500GXH25
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Untitled
Abstract: No abstract text available
Text: TOSHIBA SG2200FXF24, SG2200GXH24 Unit in mm Inverter Application I -¿3.5 ±0.2 • Repetitive Peak Off-State Voltage: VDrm=4500V, 3300V • R.M.S. On-State Current: h rm s = 1 0 0 0 A • Peak Turn-Off Current: it g q m = 2 2 0 0 A • Critical Rate of Rise of On-State Current:
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SG2200FXF24,
SG2200GXH24
SG2200FXF24
10ms-Width
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SG3000GXH29
Abstract: No abstract text available
Text: SEMICONDUCTOR T O SH IB A TECHNICAL TOSHIBA GATE TURN-OFF THYRISTOR. SG3000GXH29 DATA S G 3 0 0 0 G XH 2 9 J Unit in mm INVERTER APPLICATION Repetitive Peak Off-State Voltage : V d rm ;= 4500V R.M.S On-State Current : It (RMS = 1200A Peak Turn-Off Current
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SG3000GXH29
SG3000GXH29
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C2653
Abstract: No abstract text available
Text: CY7C265 CYPRESS SEMICONDUCTOR 8192 X 8 Registered PROM Features Functional Description • C M O S for o ptim um speed/pow er T he CY7C265 is a 8192 x 8 registered PR O M . It is organized as 8,192 words by 8 bits wide, and has a pipeline o u tp u t re g
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CY7C265
7C265W)
28-pin,
300-mil
--25W
7C265
--40JC
CY7C265
--60D
C2653
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