10n03l
Abstract: 10N03LB
Text: 10N03LB G OptiMOS 2 Power-Transistor Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target application V DS 30 V R DS on),max 9.9 mΩ ID 50 A • N-channel - Logic level • Excellent gate charge x R DS(on) product (FOM)
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IPP10N03LB
PG-TO220-3-1
Q67045-A5033
10N03LB
10n03l
10N03LB
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10N03
Abstract: 10n03l IPP10N03LB JESD22 10N03LB
Text: 10N03LB G OptiMOS 2 Power-Transistor Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target application V DS 30 V R DS on),max 9.9 mΩ ID 50 A • N-channel - Logic level • Excellent gate charge x R DS(on) product (FOM)
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IPP10N03LB
PG-TO220-3-1
10N03LB
10N03
10n03l
JESD22
10N03LB
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10N03
Abstract: IPP10N03LB JESD22 10n03l
Text: 10N03LB G OptiMOS 2 Power-Transistor Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target application V DS 30 V R DS on),max 9.9 mΩ ID 50 A • N-channel - Logic level • Excellent gate charge x R DS(on) product (FOM)
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Original
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IPP10N03LB
PG-TO220-3-1
10N03LB
10N03
JESD22
10n03l
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PDF
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10n03
Abstract: No abstract text available
Text: 10N03LB G OptiMOS 2 Power-Transistor Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target application V DS 30 V R DS on),max 9.9 mΩ ID 50 A • N-channel - Logic level • Excellent gate charge x R DS(on) product (FOM)
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Original
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IPP10N03LB
PG-TO220-3-1
10N03LB
10n03
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Untitled
Abstract: No abstract text available
Text: 10N03LB G OptiMOS 2 Power-Transistor Product Summary Features V DS 30 V • Ideal for high-frequency dc/dc converters R DS on ,max 9.9 m: ID 50 A • Qualified according to JEDEC1) for target application • N-channel - Logic level • Excellent gate charge x R DS(on) product (FOM)
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IPP10N03LB
PG-TO220-3
10N03LB
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PEF 24628
Abstract: PSB 21493 siemens PMB 6610 47n60c3 psb 21553 Pmb7725 PEF 22628 PMB6610 psb 50505 PMB 6819
Text: 2006/2007 Published by Infineon Technologies AG Ordering No. B192-H6780-G10-X-7600 Printed in Germany PS 080648. nb Infineon Product Catalog for Distribution 2006/2007 Product Catalog for Distribution www.infineon.com/distribution Edition July 2006 Published by
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B192-H6780-G10-X-7600
SP000012954
SP000013610
SP000017969
SP000014627
SP000018085
SP000018086
PEF 24628
PSB 21493
siemens PMB 6610
47n60c3
psb 21553
Pmb7725
PEF 22628
PMB6610
psb 50505
PMB 6819
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BCM 4336
Abstract: 2A0565 C2335 2A280Z C1740 bipolar transistor transistor A1267 a1273 transistor c2335 r 2B0565 2b265
Text: 01.07.2005 11:10 Uhr Seite 2 Shor t Form Catalog for Distribution 2005/06 w w w. i n f i n e o n . c o m / d i s t r i b u t i o n Published by Infineon Technologies AG Ordering No. B192-H6780-G9-X-7600 Printed in Germany LM 060550. Shor t Form Catalog Distribution 2005/06
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B192-H6780-G9-X-7600
D-81669
VDSL5100i-E
VDSL6100i-E
BCM 4336
2A0565
C2335
2A280Z
C1740 bipolar transistor
transistor A1267
a1273 transistor
c2335 r
2B0565
2b265
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10n03
Abstract: IPB10N03LB JESD22 10n03l
Text: 10N03LB OptiMOS 2 Power-Transistor Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target applications V DS 30 V R DS on),max 9.6 mΩ ID 50 A • N-channel - Logic level • Excellent gate charge x R DS(on) product (FOM)
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IPB10N03LB
PG-TO263-3
10N03LB
10n03
IPB10N03LB
JESD22
10n03l
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10N03L
Abstract: 10N03LB 10N03
Text: 10N03LB OptiMOS 2 Power-Transistor Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target applications V DS 30 V R DS on),max 9.6 mΩ ID 50 A • N-channel - Logic level • Excellent gate charge x R DS(on) product (FOM)
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IPB10N03LB
P-TO263-3
Q67045-A5032
10N03LB
10N03L
10N03LB
10N03
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