10N60G
Abstract: mosfet 10a 600v 10N60G-TF3-T utc 10n60l
Text: UNISONIC TECHNOLOGIES CO., LTD 10N60 Power MOSFET 10A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 10N60 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have
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10N60
10N60
O-220
O-220F1
O-220F2
QW-R502-119
10N60G
mosfet 10a 600v
10N60G-TF3-T
utc 10n60l
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10N60
Abstract: power mosfet 200A MOSFET 10n60 UTC10N60 Power MOSFET 50V 10A 10n60b equivalent data book of 10N60 mosfet mosfet 10a 600v MOSFET 10n60 Data sheet 10N60A
Text: UNISONIC TECHNOLOGIES CO., LTD 10N60 Power MOSFET 10 Amps, 600/650 Volts N-CHANNEL POWER MOSFET 1 DESCRIPTION The UTC 10N60 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a
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10N60
O-220
10N60
O-220F
O-220F1
10N60L
10N60G
QW-R502-119
power mosfet 200A
MOSFET 10n60
UTC10N60
Power MOSFET 50V 10A
10n60b
equivalent data book of 10N60 mosfet
mosfet 10a 600v
MOSFET 10n60 Data sheet
10N60A
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tf 10n60
Abstract: MOSFET 10n60 10N60 equivalent+of+10N60+mosfet
Text: UNISONIC TECHNOLOGIES CO., LTD 10N60 Power MOSFET 10A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 10N60 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have
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10N60
10N60
QW-R502-119
tf 10n60
MOSFET 10n60
equivalent+of+10N60+mosfet
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10N60G TO-220F
Abstract: UTC10N60L,10N60L, UTC10N60L,10N60L utc 10n60l
Text: UNISONIC TECHNOLOGIES CO., LTD 10N60 Power MOSFET 10A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 10N60 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have
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10N60
10N60
QW-R502-119
10N60G TO-220F
UTC10N60L,10N60L,
UTC10N60L,10N60L
utc 10n60l
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MOSFET 10n60
Abstract: 10n60b 10N60 10N60A 10n60 mosfet g 10N60 f 10n60 c G 10N60 A equivalent data book of 10N60 mosfet MOSFET 10n60 Data sheet
Text: UNISONIC TECHNOLOGIES CO., LTD 10N60 Power MOSFET 10 Amps, 600/650 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 10N60 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche
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10N60
10N60
10N60L
QW-R502-119
MOSFET 10n60
10n60b
10N60A
10n60 mosfet
g 10N60
f 10n60 c
G 10N60 A
equivalent data book of 10N60 mosfet
MOSFET 10n60 Data sheet
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UTC10N60
Abstract: utc 10n60l 10N60G 10N60G-TF3-T 10N60L 10N60L-TF2-T 10n60 QW-R502-119 10N60G-TQ2-T 10N60L-TQ2-T
Text: UNISONIC TECHNOLOGIES CO., LTD 10N60 Power MOSFET 10A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 10N60 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche
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10N60
10N60
QW-R502-119
UTC10N60
utc 10n60l
10N60G
10N60G-TF3-T
10N60L
10N60L-TF2-T
10N60G-TQ2-T
10N60L-TQ2-T
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10N60G TO-220F
Abstract: MOSFET 10n60 utc 10n60l 10N60 TO-220-F2 10N60G
Text: UNISONIC TECHNOLOGIES CO., LTD 10N60 Power MOSFET 10A, 600V N-CHANNEL POWER MOSFET 1 DESCRIPTION The UTC 10N60 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche
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10N60
O-220
10N60
O-220F
O-220F1
O-220F2
QW-R502-119
10N60G TO-220F
MOSFET 10n60
utc 10n60l
TO-220-F2
10N60G
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10N60
Abstract: 10n60b equivalent data book of 10N60 mosfet MOSFET 10n60 Data sheet MOSFET 10n60 mosfet 10a 600v mosfet 300V 10A datasheet 10N60A g 10N60 power mosfet 600v
Text: UNISONIC TECHNOLOGIES CO., LTD 10N60 Power MOSFET 10 Amps, 600/650 Volts N-CHANNEL POWER MOSFET 1 DESCRIPTION The UTC 10N60 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a
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10N60
O-220
10N60
O-220F
O-220F1
10N60L
10N60G
QW-R502-119
10n60b
equivalent data book of 10N60 mosfet
MOSFET 10n60 Data sheet
MOSFET 10n60
mosfet 10a 600v
mosfet 300V 10A datasheet
10N60A
g 10N60
power mosfet 600v
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 10N60 Power MOSFET 10 Amps, 600/650 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 10N60 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche
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10N60
10N60
10N60L
QW-R502-119
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 10N60 Power MOSFET 10A, 600V N-CHANNEL POWER MOSFET DESCRIPTION 1 The UTC 10N60 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche
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10N60
10N60
O-220
O-220F
O-220at
QW-R502-119
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10N60L
Abstract: 10N60G
Text: UNISONIC TECHNOLOGIES CO., LTD 10N60 Power MOSFET 10A, 600V N-CHANNEL POWER MOSFET 1 DESCRIPTION The UTC 10N60 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche
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10N60
O-220
10N60
O-220F
O-220F1
O-220F2
QW-R502-119
10N60L
10N60G
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mosfet 10a 600v
Abstract: MOSFET 10n60 10N60 10N60G 10N60G-TA3-T 10N60L tr 10n60 UTC10N60 utc 10n60l
Text: UNISONIC TECHNOLOGIES CO., LTD 10N60 Power MOSFET 10A, 600V N-CHANNEL POWER MOSFET DESCRIPTION 1 The UTC 10N60 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche
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10N60
10N60
O-220
O-220F
O-220F1
QW-R502-119
mosfet 10a 600v
MOSFET 10n60
10N60G
10N60G-TA3-T
10N60L
tr 10n60
UTC10N60
utc 10n60l
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UTC10N60
Abstract: 10N60G-TF1-T tr 10n60 10N60L-TQ2-T 10N60G TO-220F UTC 10N60L
Text: UNISONIC TECHNOLOGIES CO., LTD 10N60 Power MOSFET 10A, 600V N-CHANNEL POWER MOSFET 1 DESCRIPTION The UTC 10N60 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche
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10N60
O-220
10N60
O-220F
O-220F1
O-220F2
QW-R502-119
UTC10N60
10N60G-TF1-T
tr 10n60
10N60L-TQ2-T
10N60G TO-220F
UTC 10N60L
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MOSFET 10n60
Abstract: TF 10N60 e MTN10N60FP 10N60 equivalent data book of 10N60 mosfet MOSFET 10n60 Data sheet mosfet 10a 600v CYStech Electronics
Text: CYStech Electronics Corp. N-Channel Enhancement Mode Power MOSFET MTN10N60FP Spec. No. : C406FP Issued Date : 2008.12.02 Revised Date :2009.04.20 Page No. : 1/9 BVDSS : 650V @Tj=150℃ RDS ON : 0.75Ω ID : 10A Description The MTN10N60FP is a N-channel enhancement-mode MOSFET, providing the designer with the best
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MTN10N60FP
C406FP
MTN10N60FP
O-220FP
UL94V-0
MOSFET 10n60
TF 10N60 e
10N60
equivalent data book of 10N60 mosfet
MOSFET 10n60 Data sheet
mosfet 10a 600v
CYStech Electronics
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MOSFET 10n60
Abstract: 10N60 MTN10N60E3 CYStech Electronics TF 10N60 e MOSFET 10n60 Data sheet ISD10* information storage device mtn10n60e
Text: CYStech Electronics Corp. N-Channel Enhancement Mode Power MOSFET MTN10N60E3 Spec. No. : C406E3 Issued Date : 2008.12.02 Revised Date :2008.12.09 Page No. : 1/9 BVDSS : 650V @Tj=150℃ RDS ON : 0.75Ω ID : 10A Description The MTN10N60E3 is a N-channel enhancement-mode MOSFET, providing the designer with the best
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MTN10N60E3
C406E3
MTN10N60E3
O-220
UL94V-0
MOSFET 10n60
10N60
CYStech Electronics
TF 10N60 e
MOSFET 10n60 Data sheet
ISD10* information storage device
mtn10n60e
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10N60A
Abstract: IGBT 10N60 10N60 IXSH10N60 IXSH10N60A g 10N60
Text: Preliminary data High Speed IGBT IXSH10N60 IXSH10N60A Short Circuit SOA Capability VCES IC 25 VCE(sat) 600 V 600 V 20 A 20 A 2.5 V 3.0 V TO-247 AD Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ
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IXSH10N60
IXSH10N60A
O-247
10N60A
IGBT 10N60
10N60
IXSH10N60
IXSH10N60A
g 10N60
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equivalent of 10N60 mosfet
Abstract: MOSFET 10n60 10n60 3VD446600YL MOSFET 10n60 Data sheet
Text: 3VD446600YL 3VD446600YL HIGH VOLTAGE MOSFET CHIPS DESCRIPTION Ø 3VD446600YL is a High voltage N-Channel enhancement mode power MOS-FET chip fabricated in Ø 3 1 advanced silicon epitaxial planar technology; Advanced termination scheme to provide enhanced
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3VD446600YL
3VD446600YL
O-220
10N60;
equivalent of 10N60 mosfet
MOSFET 10n60
10n60
MOSFET 10n60 Data sheet
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8N65
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 產 品 變 更 通 知 PRODUCT CHANGE NOTIFICATION PCN No. TITLE IC-PPCN-110605 xN60 MOSFET Part Number Change Issue Date Jun-29-2011 Page 1 of 2 變更主旨 TITLE : xN60系列取消檔次及650V產品變更品名 Bin code cancellation for xN60 series and part number change for 650V of xN60 series MOSFET Devices
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IC-PPCN-110605
Jun-29-2011
QR-0205-02
8N65
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RX10N60
Abstract: 10n60 transistor
Text: CPEC 成都瑞芯电子有限公司 CHENGDU PROMISING CHIP ELECTRONICS CO., LTD RX10N60 600V N 沟道功率 MOSFET 产品简介 地址；成都高新区世纪城南路 216 号天府软件园 D 区 6 号楼 14 层 Tel：086-28-85198496 85198428 Fax：086-28-8519893
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RX10N60
Tel086-28-85198496
Fax086-28-8519893
RX10N60]
10N60
RX10N60,
O-220AB,
RX10N60
10n60 transistor
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9n90c
Abstract: 9n50c IGBT 20N50 kmb*050n60p 7N65C 5n50c smd diode S4 58a 2N60C 2N60 MOSFET SMPS str TV SMPS
Text: Power MOS -FET Selection Guide MOS-FET 2007. 2007. First First Version Version Http://www.kec.co.kr KEC-H Corp. Product classification First & Best First & Best MOSFET MOSFET SS-MOSFET MOSFET Trench TrenchMOSFET MOSFET Planar PlanarMOSFET MOSFET Pw Pw<<1W
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2N7000
2N7000A
2N7000K
70Max
45Max
55Max
80Max
9n90c
9n50c
IGBT 20N50
kmb*050n60p
7N65C
5n50c
smd diode S4 58a
2N60C
2N60 MOSFET SMPS
str TV SMPS
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50n50c
Abstract: 50N60 IXGH20N60AU1 10N60A IXGH20N60U1 G 50N60 G20N60 sot-227 footprint A48A 24N60
Text: Preliminary data HiPerFASTTM IGBT VCES IXGH 50N50B IXGH 50N60B IC25 VCE sat 500 V 75 A 600 V 75 A tfi 2.3 V 100 ns 2.5 V 120 ns TO-247 AD C (TAB) Symbol Test Conditions Maximum Ratings 50N50 50N60 VCES TJ = 25°C to 150°C 500 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ
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50N50B
50N60B
O-247
50N50
50N60
IXGH24N50BU1
IXGH24N60BU1
50n50c
50N60
IXGH20N60AU1
10N60A
IXGH20N60U1
G 50N60
G20N60
sot-227 footprint
A48A
24N60
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MOSFET 10n60
Abstract: 10N60A ir 10n60 10N60 IXTH10N60 IXTM10N60 10N60R 3N90R
Text: I X Y S CORP IflE D • 4L,ab22b OOOObO'ï ? ■ □IXYS MAXIMUM RATINGS , 'T '2 ° 1 Parameter Sym. Drain-Source Voltage 1 Drain-Qate Voltage (RGS=1.0 MQ) (1) Gate-Source Voltage Continuous Gate-Source Voltage Transient Drain Current Continuous (Tc =25°C)
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4bab22b
IXTH10N60,
IXTM10N60
55Q/0
IXTH10N60
O-247
300ns,
MOSFET 10n60
10N60A
ir 10n60
10N60
10N60R
3N90R
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10N60A
Abstract: IGBT 10N60 10N60 IXGH10N60A IXGH10N60
Text: □ IXYS Preliminary data L 0 W V CE,sa. I G B T IXGA/IXGP/IXGH10N60 IXGA/IXGP/IXGH10N60A High speed IGBT Vv CES ^C25 600 V 600 V 20 A 20 A V C E sat) 2.5 V 3.0 V T0-220AB (IXG P) Symbol Test Conditions v CES Tj = 25°C to 150°C 600 V V CGR Tj = 25°C to 150°C; RGE = 1 M£i
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IXGA/IXGP/IXGH10N60
IXGA/IXGP/IXGH10N60A
150i2
O-247
10N60A
IGBT 10N60
10N60
IXGH10N60A
IXGH10N60
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IXTH10N60
Abstract: IXTM10N60
Text: CORP IflE D • 4bab22b □ IX Y S OOOObO'ï 7 ■ IXTH10N60, IXTM10N60 MAXIMUM RATINGS 10 AMPS, 600 V, 0.55Q/0.7S2 'T-201 -IS , Sym. Parameter Drain-Source Voltage 1 Drain-Qate Voltage (RGS=1.0 MQ) (1) IXTH10N60 IXTM10N60 Unit 600 600 ±20 ±30 Vd0 Vdc
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4bab22b
IXTH10N60,
IXTM10N60
55Q/0
IXTH10N60
CHARACTE420
O-204
O-220
O-247
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