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    10N60B Price and Stock

    Rochester Electronics LLC SSS10N60B

    N-CHANNEL POWER MOSFET
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    IXYS Corporation IXSA10N60B2D1

    IGBT 600V 20A 100W TO263
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    DigiKey IXSA10N60B2D1 Bulk 50
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    New Advantage Corporation IXSA10N60B2D1 66 1
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    STMicroelectronics STG3P2M10N60B

    IGBT MOD 600V 19A 56W SEMITOP2
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    DigiKey STG3P2M10N60B Bulk 30
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    IXYS Corporation IXSP10N60B2D1

    IGBT 600V 20A 100W TO220AB
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    DigiKey IXSP10N60B2D1 Bulk 50
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    IXYS Corporation IXSH10N60B2D1

    IGBT 600V 20A 100W TO247
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    DigiKey IXSH10N60B2D1 Box 30
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    New Advantage Corporation IXSH10N60B2D1 209 1
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    Find more 10N60B price and stock on Findchips.com

    10N60B Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    10N60-B-TA3-T Unisonic Technologies 10 Amps, 600/650 Volts N-CHANNEL POWER MOSFET Original PDF

    10N60B Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    10n60b

    Abstract: No abstract text available
    Text: High Speed IGBT with Diode IXSH 10N60B2D1 IXSQ 10N60B2D1 Short Circuit SOA Capability VCES = 600 V I C25 = 20 A V CE sat = 2.5 V Preliminary Data Sheet D1 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ


    Original     		10N60B2D1 10N60B2D1 IC110 O-247 8-06B 405B2 10n60b PDF

    Untitled

    Abstract: No abstract text available
    Text: High Speed IGBT with Diode IXSH 10N60B2D1 IXSQ 10N60B2D1 Short Circuit SOA Capability VCES = 600 V I C25 = 20 A V CE sat = 2.5 V Preliminary Data Sheet D1 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ


    Original     		10N60B2D1 IC110 8-06B 405B2 PDF

    10n60b

    Abstract: No abstract text available
    Text: High Speed IGBT with Diode IXSH 10N60B2D1 IXSQ 10N60B2D1 Short Circuit SOA Capability VCES = 600 V I C25 = 20 A V CE sat = 2.5 V Preliminary Data Sheet D1 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ


    Original     		10N60B2D1 IC110 8-06B 405B2 10n60b PDF

    Untitled

    Abstract: No abstract text available
    Text: High Speed IGBT with Diode IXSA 10N60B2D1 IXSP 10N60B2D1 Short Circuit SOA Capability VCES = 600 V I C25 = 20 A V CE sat = 2.5 V Preliminary Data Sheet D1 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ


    Original     		10N60B2D1 IC110 8-06B 405B2 PDF

    10n60b

    Abstract: 10n60b2d1
    Text: High Speed IGBT with Diode IXSA 10N60B2D1 IXSP 10N60B2D1 Short Circuit SOA Capability VCES = 600 V = 20 A I C25 V CE sat = 2.5 V Preliminary Data Sheet D1 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ


    Original     		10N60B2D1 IC110 8-06B 405B2 10n60b 10n60b2d1 PDF

    10N60

    Abstract: power mosfet 200A MOSFET 10n60 UTC10N60 Power MOSFET 50V 10A 10n60b equivalent data book of 10N60 mosfet mosfet 10a 600v MOSFET 10n60 Data sheet 10N60A
    Text: UNISONIC TECHNOLOGIES CO., LTD 10N60 Power MOSFET 10 Amps, 600/650 Volts N-CHANNEL POWER MOSFET „ 1 DESCRIPTION The UTC 10N60 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a


    Original     		10N60 O-220 10N60 O-220F O-220F1 10N60L 10N60G QW-R502-119 power mosfet 200A MOSFET 10n60 UTC10N60 Power MOSFET 50V 10A 10n60b equivalent data book of 10N60 mosfet mosfet 10a 600v MOSFET 10n60 Data sheet 10N60A PDF

    MOSFET 10n60

    Abstract: 10n60b 10N60 10N60A 10n60 mosfet g 10N60 f 10n60 c G 10N60 A equivalent data book of 10N60 mosfet MOSFET 10n60 Data sheet
    Text: UNISONIC TECHNOLOGIES CO., LTD 10N60 Power MOSFET 10 Amps, 600/650 Volts N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 10N60 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche


    Original     		10N60 10N60 10N60L QW-R502-119 MOSFET 10n60 10n60b 10N60A 10n60 mosfet g 10N60 f 10n60 c G 10N60 A equivalent data book of 10N60 mosfet MOSFET 10n60 Data sheet PDF

    7N60B equivalent

    Abstract: 60N60B2-7Y 7N60C-2X 7N60B-2X 10n60b ixgd 28N12 60N60C2-7Y 20N120 16N60C2
    Text: Chip-Shortform2004.pmd Insulated Gate Bipolar Transistors G-Series Type VCES VCE sat @ IC Chip type Chip size dimensions 6 TJM = 150°C V V A mm mils Source bond wire Equivalent device recommended data sheet 26.10.2004, 12:44 High Gain High Gain High Gain


    Original     		7N60B-2X 7N60C-2X 16N60B2-3X 16N60C2-3X 30N60B2-4X 30N60C2-4X 40N60B2-5Y 40N60C2-5Y 60N60B2-7Y 60N60C2-7Y 7N60B equivalent 10n60b ixgd 28N12 20N120 16N60C2 PDF

    8N65

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 產 品 變 更 通 知 PRODUCT CHANGE NOTIFICATION PCN No. TITLE IC-PPCN-110605 xN60 MOSFET Part Number Change Issue Date Jun-29-2011 Page 1 of 2 變更主旨 TITLE : xN60系列取消檔次及650V產品變更品名 Bin code cancellation for xN60 series and part number change for 650V of xN60 series MOSFET Devices


    Original     		IC-PPCN-110605 Jun-29-2011 QR-0205-02 8N65 PDF

    7N60B equivalent

    Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
    Text: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches


    Original     		MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2 PDF

    10N60

    Abstract: 10n60b equivalent data book of 10N60 mosfet MOSFET 10n60 Data sheet MOSFET 10n60 mosfet 10a 600v mosfet 300V 10A datasheet 10N60A g 10N60 power mosfet 600v
    Text: UNISONIC TECHNOLOGIES CO., LTD 10N60 Power MOSFET 10 Amps, 600/650 Volts N-CHANNEL POWER MOSFET „ 1 DESCRIPTION The UTC 10N60 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a


    Original     		10N60 O-220 10N60 O-220F O-220F1 10N60L 10N60G QW-R502-119 10n60b equivalent data book of 10N60 mosfet MOSFET 10n60 Data sheet MOSFET 10n60 mosfet 10a 600v mosfet 300V 10A datasheet 10N60A g 10N60 power mosfet 600v PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 10N60 Power MOSFET 10 Amps, 600/650 Volts N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 10N60 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche


    Original     		10N60 10N60 10N60L QW-R502-119 PDF