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onsemi NVH4L020N120SC1 SICFET N-CH 1200V 102A TO247
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	NVH4L020N120SC1	Tube	1,342		1	1 $49.69 10 $49.69 100 $35.38533 1000 $35.38533 10000 $35.38533	Buy Now
Avnet Americas	NVH4L020N120SC1	Tube		17 Weeks	450	1 - 10 - 100 - 1000 $34.9484 10000 $31.45356	Buy Now
Mouser Electronics	NVH4L020N120SC1		296			1 $48.63 10 $42 100 $40.34 1000 $39.72 10000 $39.72	Buy Now
Newark	NVH4L020N120SC1	Bulk	258		1	1 $39.79 10 $38.69 100 $32.93 1000 $31.83 10000 $31.83	Buy Now
Richardson RFPD	NVH4L020N120SC1				450	1 - 10 - 100 - 1000 $35.39 10000 $35.39	Buy Now

Avnet Silica	NVH4L020N120SC1		180	18 Weeks	30	1 - 10 - 100 - 1000 - 10000 -	Buy Now
EBV Elektronik	NVH4L020N120SC1		180	19 Weeks	30	1 - 10 - 100 - 1000 - 10000 -	Buy Now
New Advantage Corporation	NVH4L020N120SC1		150		1	1 - 10 - 100 $72.97 1000 $67.52 10000 $67.52	Buy Now
onsemi NTBG020N120SC1 SICFET N-CH 1200V 8.6A/98A D2PAK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	NTBG020N120SC1	Cut Tape	1,222		1	1 $36.41 10 $27.015 100 $36.41 1000 $36.41 10000 $36.41	Buy Now
	NTBG020N120SC1	Digi-Reel	1,222		1	1 $36.41 10 $27.015 100 $36.41 1000 $36.41 10000 $36.41	Buy Now
	NTBG020N120SC1	Reel	800		800	1 - 10 - 100 - 1000 $24.07113 10000 $24.07113	Buy Now
Avnet Americas	NTBG020N120SC1	Reel		17 Weeks	800	1 - 10 - 100 - 1000 $24.68833 10000 $21.4605	Buy Now
Mouser Electronics	NTBG020N120SC1		339			1 $32.86 10 $25.56 100 $24.08 1000 $24.07 10000 $24.07	Buy Now
Newark	NTBG020N120SC1	Cut Tape	526		1	1 $34.4 10 $33.11 100 $29.9 1000 $29.89 10000 $29.88	Buy Now
Rochester Electronics	NTBG020N120SC1		15		1	1 $26.75 10 $26.75 100 $25.15 1000 $22.74 10000 $22.74	Buy Now

Richardson RFPD	NTBG020N120SC1				800	1 - 10 - 100 - 1000 $24.07 10000 $24.07	Buy Now
Avnet Asia	NTBG020N120SC1		32	17 Weeks	800	1 - 10 - 100 - 1000 $5.77706 10000 $5.77128	Buy Now
Avnet Silica	NTBG020N120SC1			18 Weeks	800	1 - 10 - 100 - 1000 - 10000 -	Buy Now
EBV Elektronik	NTBG020N120SC1		8,800	19 Weeks	800	1 - 10 - 100 - 1000 - 10000 -	Buy Now
New Advantage Corporation	NTBG020N120SC1		1,624		1	1 - 10 - 100 - 1000 $32.73 10000 $30.55	Buy Now
Wuhan P&S	NTBG020N120SC1		651		1	1 $67.13 10 $67.13 100 $42.85 1000 $32.49 10000 $32.49	Buy Now
onsemi NVBG020N120SC1 MOSFET N-CH 1200V 8.6A/98A D2PAK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	NVBG020N120SC1	Digi-Reel	1,143		1	1 $47.63 10 $35.799 100 $47.63 1000 $47.63 10000 $47.63	Buy Now
	NVBG020N120SC1	Cut Tape	1,143		1	1 $47.63 10 $35.799 100 $47.63 1000 $47.63 10000 $47.63	Buy Now
	NVBG020N120SC1	Reel	800		800	1 - 10 - 100 - 1000 $34.63413 10000 $34.63413	Buy Now
Avnet Americas	NVBG020N120SC1	Reel	800	17 Weeks	800	1 - 10 - 100 - 1000 $35.52218 10000 $30.78589	Buy Now
Newark	NVBG020N120SC1	Cut Tape	742		1	1 $38.94 10 $37.87 100 $32.23 1000 $31.16 10000 $31.16	Buy Now
Rochester Electronics	NVBG020N120SC1		4,600		1	1 $38.48 10 $38.48 100 $36.17 1000 $32.71 10000 $32.71	Buy Now
Richardson RFPD	NVBG020N120SC1				800	1 - 10 - 100 - 1000 $34.63 10000 $34.63	Buy Now

Avnet Silica	NVBG020N120SC1			18 Weeks	800	1 - 10 - 100 - 1000 - 10000 -	Buy Now
EBV Elektronik	NVBG020N120SC1		1,600	19 Weeks	800	1 - 10 - 100 - 1000 - 10000 -	Buy Now
New Advantage Corporation	NVBG020N120SC1		1,600		1	1 - 10 - 100 - 1000 $45.5 10000 $42.47	Buy Now
Wuhan P&S	NVBG020N120SC1		671		1	1 $96.59 10 $96.59 100 $61.65 1000 $46.74 10000 $46.74	Buy Now
STMicroelectronics SCT20N120 SICFET N-CH 1200V 20A HIP247
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SCT20N120	Tube	674		1	1 $14.17 10 $14.17 100 $8.63767 1000 $7.25 10000 $7.25	Buy Now
Avnet Americas	SCT20N120	Tube		32 Weeks	600	1 - 10 - 100 - 1000 $7.54 10000 $7.105	Buy Now
	SCT20N120	Tube			600	1 - 10 - 100 - 1000 $7.54 10000 $7.105	Buy Now
Mouser Electronics	SCT20N120		359			1 $9.68 10 $9.68 100 $7.25 1000 $7.25 10000 $7.25	Buy Now
Newark	SCT20N120	Bulk	532		1	1 $11.46 10 $10.71 100 $9.38 1000 $6.89 10000 $6.72	Buy Now
STMicroelectronics	SCT20N120		359		1	1 $9.49 10 $9.49 100 $7.11 1000 $7.11 10000 $7.11	Buy Now

TME	SCT20N120				1	1 $14.89 10 $13.56 100 $13.56 1000 $13.56 10000 $13.56	Get Quote
Avnet Silica	SCT20N120		450	17 Weeks	30	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Chip One Stop	SCT20N120	Tube	321			1 $8.7 10 $8.56 100 $8.5 1000 $8.14 10000 $8.14	Buy Now
EBV Elektronik	SCT20N120		180	33 Weeks	30	1 - 10 - 100 - 1000 - 10000 -	Buy Now
STMicroelectronics SCTWA20N120 IC POWER MOSFET 1200V HIP247
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SCTWA20N120	Tube	526		1	1 $14.06 10 $11.091 100 $14.06 1000 $8.90698 10000 $8.71551	Buy Now
Avnet Americas	SCTWA20N120	Bulk		32 Weeks	600	1 - 10 - 100 - 1000 $7.425 10000 $6.96429	Buy Now
STMicroelectronics	SCTWA20N120		600		1	1 $12.21 10 $10.8 100 $9.25 1000 $8.72 10000 $8.72	Buy Now
TME	SCTWA20N120		1		1	1 $15.26 10 $15.26 100 $13.36 1000 $11.18 10000 $11.18	Buy Now
Avnet Silica	SCTWA20N120			17 Weeks	30	1 - 10 - 100 - 1000 - 10000 -	Buy Now

EBV Elektronik	SCTWA20N120			33 Weeks	30	1 - 10 - 100 - 1000 - 10000 -	Buy Now

Find more 20N120 price and stock on Findchips.com

20N120 Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
20N120E2		Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.		Historical	PDF

20N120 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
IC IGBT 20N120 Abstract: 20n120 20N120 IGBT ixys ixdh 20n120 IXDH20N120D1 20N120D1 Text: IXDH 20N120 VCES = 1200 V = 38 A IXDH 20N120 D1 IC25 VCE sat typ = 2.4 V High Voltage IGBT with optional Diode Short Circuit SOA Capability Square RBSOA C C G TO-247 AD G G C E IXDH 20N120 Symbol Conditions VCES TJ = 25°C to 150°C IXDH 20N120 D1 Maximum Ratings	Original	20N120 20N120 O-247 IXDH20N120D1 IC IGBT 20N120 20N120 IGBT ixys ixdh 20n120 IXDH20N120D1 20N120D1	PDF
20n120 Abstract: induction heating cooker igbt induction cooker siemens igbt 20A 20N120BD1 induction cooker application notes Text: High Voltage IGBT with Diode VCES IC25 VCE sat IXGP 20N120B IXGP 20N120BD1 = 1200 = 40 = 3.4 = 160 tfi(typ) Preliminary Data Sheet V A V ns D1 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ	Original	20N120B 20N120BD1 IC110 O-220 6A/DSEC16-06A 20n120 induction heating cooker igbt induction cooker siemens igbt 20A 20N120BD1 induction cooker application notes	PDF
IC IGBT 20N120 Abstract: IXDH20N120AU1 ixdh20n120au 20N120 Text: IXDA 20N120 AS VCES = 1200 V = 34 A IC25 VCE sat typ = 2.8 V High Voltage IGBT Short Circuit SOA Capability Square RBSOA C Preliminary Data TO-263 AB G G E E Symbol Conditions VCES TJ = 25°C to 150°C Maximum Ratings 1200 VCGR TJ = 25°C to 150°C; RGE = 20 kW	Original	20N120 O-263 IXDH20N120AU1 IC IGBT 20N120 IXDH20N120AU1 ixdh20n120au	PDF
Untitled Abstract: No abstract text available Text: Advanced Technical Data High Voltage IGBT IXGH 20N120B VCES IXGT 20N120B IC25 VCE sat = 1200 = 40 = 3.4 = 160 tfi(typ) Symbol Test Conditions VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20 V VGEM Transient	Original	20N120B O-268 O-247 728B1 123B1 065B1	PDF
Untitled Abstract: No abstract text available Text: High Voltage IGBT with Diode VCES IC25 VCE sat IXGH 20N120BD1 IXGT 20N120BD1 tfi(typ) Preliminary Data Sheet Symbol Test Conditions VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20 V VGEM Transient ±30	Original	20N120BD1 20N120BD1 IC110 O-247AD O-268 O-247) Fea140	PDF
IXGH20N120BD1 Abstract: IXGH 20N120BD1 Text: High Voltage IGBT with Diode VCES IC25 VCE sat IXGH 20N120BD1 IXGT 20N120BD1 tfi(typ) Preliminary Data Sheet Symbol Test Conditions VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20 V VGEM Transient ±30	Original	20N120BD1 20N120BD1 IC110 O-247AD O-268 O-247) Fea140 IXGH20N120BD1 IXGH 20N120BD1	PDF
20N120D1 Abstract: IC IGBT 20N120 20n120 FII30-12E ISOPLUS247 Text: IXER 20N120 IXER 20N120D1 NPT3 IGBT IC25 = 36 A VCES = 1200 V VCE sat typ = 2.4 V in ISOPLUS247 C ISOPLUS247™ C G G G C E IXER 20N120 Isolated Backside E E IXER 20N120D1 G = Gate C = Collector E = Emitter Features IGBT Symbol Conditions VCES TVJ = 25°C to 150°C	Original	20N120 20N120D1 ISOPLUS247TM 20080118a 20N120D1 IC IGBT 20N120 20n120 FII30-12E ISOPLUS247	PDF
Untitled Abstract: No abstract text available Text: Advanced Technical Information VCES IC25 VCE sat tfi(typ) IXGH 20N120 IXGT 20N120 IGBT High Voltage, Low VCE(sat) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1200 V VGES Continuous ±20 V VGEM	Original	20N120 20N120 O-268 O-247 O-268AA	PDF
MJ480 Abstract: No abstract text available Text: IXDA 20N120AS High Voltage IGBT IC25 = 38 A = 1200 V VCES VCE sat typ = 2.4 V Short Circuit SOA Capability Square RBSOA TAB 1 h 3 TAB Features IGBT Symbol Conditions VCES TVJ = 25°C to 150°C Maximum Ratings VGES IC25 IC90 TC = 25°C TC = 90°C ICM VCEK	Original	20N120AS 20110118a MJ480	PDF
20N120 Abstract: No abstract text available Text: Advanced Technical Information HiPerFETTM Power MOSFETs IXFN 20N120 N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr VDSS ID25 = 1200 V = 20 A RDS on = 0.75 Ω ≤ 300 ns trr D G S S Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C	Original	20N120 728B1 123B1 728B1 065B1 20N120	PDF
20N120BD1 Abstract: ixys dsep 8-12a Text: High Voltage IGBT with Diode IXGP 20N120B IXGP 20N120BD1 VCES IC25 VCE sat Designed for induction heating applications = 1200 = 40 = 3.4 = 160 tfi(typ) V A V ns D1 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ	Original	20N120B 20N120BD1 IC110 O-220 728B1 123B1 065B1 20N120BD1 ixys dsep 8-12a	PDF
20N120 Abstract: IC IGBT 20N120 Text: IXDH 20N120 AU1 High Voltage IGBT with Diode C Short Circuit SOA Capability Square RBSOA VCES = 1200 V = 34 A IC25 VCE sat typ = 2.8 V G E Preliminary Data Symbol Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 20 kΩ	Original	20N120 O-247 IXDH20N120AU1 D-68623 IC IGBT 20N120	PDF
Untitled Abstract: No abstract text available Text: High Voltage IGBT IXGH 20N120B VCES IXGT 20N120B IC25 VCE sat tfi(typ) Preliminary Data Sheet Symbol Test Conditions VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20 V VGEM Transient ±30 V Maximum Ratings	Original	20N120B IC110 O-268 O-247 728B1	PDF
Untitled Abstract: No abstract text available Text: IXGH 20N120 VCES IXGT 20N120 IC25 VCE sat tfi(typ) IGBT = 1200 V = 40 A = 2.5 V = 380 ns Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20 V VGEM	Original	20N120 O-247 O-268 O-268 728B1	PDF

Untitled Abstract: No abstract text available Text: Advanced Technical Information HiPerFETTM Power MOSFETs IXFN 20N120 N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr VDSS ID25 = 1200 V = 20 A RDS on = 0.75 Ω ≤ 300 ns trr D G S Symbol Test Conditions S Maximum Ratings VDSS TJ = 25°C to 150°C	Original	20N120 OT-227 E153432 728B1 123B1 728B1 065B1	PDF
Untitled Abstract: No abstract text available Text: Advanced Technical Information IXFK 20N120 IXFX 20N120 HiPerFETTM Power MOSFETs VDSS ID25 = 1200 V = 20 A = 0.75 Ω RDS on trr ≤ 300 ns Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ VGS VGSM Continuous	Original	20N120 247TM	PDF
Untitled Abstract: No abstract text available Text: IXDA 20N120AS IC25 = 38 A = 1200 V VCES VCE sat typ = 2.4 V High Voltage IGBT Short Circuit SOA Capability Square RBSOA TAB 1 h 3 TAB Features IGBT Symbol Conditions VCES TVJ = 25°C to 150°C Maximum Ratings VGES IC25 IC90 TC = 25°C TC = 90°C ICM VCEK	Original	20N120AS O-263 20110118a	PDF
Untitled Abstract: No abstract text available Text: High Voltage IGBT IXGH 20N120B VCES IXGT 20N120B IC25 VCE sat tfi(typ) Preliminary Data Sheet Symbol Test Conditions VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20 V VGEM Transient ±30 V Maximum Ratings	Original	20N120B O-268 IC110 728B1 123B1 728B1 065B1 20N120B	PDF
Untitled Abstract: No abstract text available Text: IXDH 20N120 VCES = 1200 V = 38 A IXDH 20N120 D1 IC25 VCE sat typ = 2.4 V High Voltage IGBT with optional Diode C C Short Circuit SOA Capability Square RBSOA G G E E IXDH 20N120 Preliminary Data IXDH 20N120 D1 Symbol Conditions Maximum Ratings VCES TJ = 25°C to 150°C	Original	20N120 20N120 O-247 IXDH20N120D1 D-68623	PDF
IC IGBT 20N120 Abstract: 20N120 Text: IGBT IXGA 20N120 VCES IXGP 20N120 IC25 VCE sat tfi(typ) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 40 A IC90 TC = 90°C	Original	20N120 O-220AB O-263 728B1 IC IGBT 20N120	PDF
TO-247 weight Abstract: 20N120 20N120 IGBT Text: IGBT IXGH 20N120 VCES IXGT 20N120 IC25 VCE sat tfi(typ) = 1200 V = 40 A = 2.5 V = 380 ns Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20 V VGEM	Original	20N120 O-247 O-268 O-268 728B1 TO-247 weight 20N120 IGBT	PDF
IXDH20N120D1 Abstract: IXDH20N120 20N120 IC IGBT 20N120 ixys ixdh 20n120 20N120 IGBT 20N120D1 200-Millimeter Text: IXDH 20N120 VCES = 1200 V = 38 A IXDH 20N120 D1 IC25 VCE sat typ = 2.4 V High Voltage IGBT with optional Diode Short Circuit SOA Capability Square RBSOA C C G TO-247 AD G G C E IXDH 20N120 Symbol Conditions VCES TJ = 25°C to 150°C IXDH 20N120 D1 Maximum Ratings	Original	20N120 20N120 O-247 IXDH20N120D1 IXDH20N120D1 IXDH20N120 IC IGBT 20N120 ixys ixdh 20n120 20N120 IGBT 20N120D1 200-Millimeter	PDF
Untitled Abstract: No abstract text available Text: MOTOROLA Order this document by MGW20N 120/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M GW 20N120 In su late d G ate Bipolar T ransistor Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced	OCR Scan	MGW20N 120/D 20N120 MGW20N120/D	PDF
Untitled Abstract: No abstract text available Text: □IXYS High Voltage IGBT with optional Diode IXDH 20N120 IXDH 20N120 D1 V CES ^C25 vCE sat typ 1200 V 38 A 2.4 V Short Circuit SOA Capability Square RBSOA IXDH 20N120 Preliminary Data Symbol Conditions IXDH 20N120 D1 Maximum Ratings VCES Tj = 25°C to 150°C	OCR Scan	20N120 20N120	PDF

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20N120 Datasheets (1)

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