Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    16N60C2 Search Results

    SF Impression Pixel

    16N60C2 Price and Stock

    IXYS Corporation IXGC16N60C2

    IGBT 600V 20A 63W ISOPLUS220
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXGC16N60C2 Tube
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    Buy Now

    IXYS Corporation IXGP16N60C2

    IGBT 600V 40A 150W TO220
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXGP16N60C2 Tube
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    Buy Now

    IXYS Corporation IXGC16N60C2D1

    IGBT 600V 20A 63W ISOPLUS220
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXGC16N60C2D1 Tube
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    Buy Now

    IXYS Corporation IXGA16N60C2D1

    IGBT 600V 40A 150W TO263
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXGA16N60C2D1 Tube
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    Buy Now

    IXYS Corporation IXGH16N60C2D1

    IGBT 600V 40A 150W TO247
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXGH16N60C2D1 Tube
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    Buy Now

    16N60C2 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    16N60

    Abstract: 16N60C2D1
    Text: Advance Technical Information HiPerFASTTM IGBT C2-Class High Speed IGBT IXGA IXGP IXGA IXGP 16N60C2 16N60C2 16N60C2D1 16N60C2D1 VCES IC25 VCE sat = 600 V = 40 A = 3.0 V = 35 ns tfi(typ) D1 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600


    Original
    PDF 16N60C2 16N60C2D1 IC110 ID110 16N60C2D1 O-220 728B1 123B1 16N60

    16N60C2D1

    Abstract: 16N60C2 E153432 IXGC16N60C2D1
    Text: IXGC 16N60C2 HiPerFASTTM IGBT IXGC 16N60C2D1 C2-Class High Speed IGBT in ISOPLUS220TM Case VCES IC25 VCE sat Electrically Isolated Back Surface tfi(typ) = 600 V = 20 A = 3.0 V = 35 ns Preliminary Data Sheet D1 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C


    Original
    PDF 16N60C2 16N60C2D1 ISOPLUS220TM IC110 ID110 IXGC16N60C2D1 405B2 16N60C2D1 16N60C2 E153432

    16N60

    Abstract: 16N60C2D1 IXGC16N60C2D1 16N60C2
    Text: Advance Technical Information IXGC 16N60C2 HiPerFASTTM IGBT IXGC 16N60C2D1 C2-Class High Speed IGBT in ISOPLUS220TM Case VCES IC25 VCE sat Electrically Isolated Back Surface tfi(typ) = 600 V = 20 A = 3.0 V = 35 ns D1 Symbol Test Conditions Maximum Ratings


    Original
    PDF 16N60C2 16N60C2D1 ISOPLUS220TM IC110 ID110 IXGC16N60C2D1 065B1 728B1 123B1 728B1 16N60 16N60C2D1 16N60C2

    16N60C2D1

    Abstract: 16n60c2 16N60
    Text: Advance Technical Information IXGC 16N60C2 HiPerFASTTM IGBT IXGC 16N60C2D1 C2-Class High Speed IGBT in ISOPLUS220TM Case VCES IC25 VCE sat Electrically Isolated Back Surface tfi(typ) = 600 V = 20 A = 3.0 V = 35 ns D1 Symbol Test Conditions Maximum Ratings


    Original
    PDF 16N60C2 16N60C2D1 ISOPLUS220TM IC110 ID110 IXGC16N60C2D1 220TM E153432 065B1 728B1 16N60

    ID110

    Abstract: No abstract text available
    Text: Advance Technical Information HiPerFASTTM IGBT C2-Class High Speed IGBT IXGA IXGP IXGA IXGP 16N60C2 16N60C2 16N60C2D1 16N60C2D1 VCES IC25 VCE sat = 600 V = 40 A = 3.0 V = 35 ns tfi(typ) D1 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600


    Original
    PDF 16N60C2 16N60C2D1 16N60C2D1 IC110 ID110 O-263 O-220

    16N60C2D1

    Abstract: 16N60 IF110
    Text: Advance Technical Information HiPerFASTTM IGBT C2-Class High Speed IGBT IXGH 16N60C2D1 VCES IC25 VCE sat tfi(typ) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM


    Original
    PDF 16N60C2D1 IC110 O-247 IF110 065B1 728B1 123B1 728B1 16N60C2D1 16N60 IF110

    7N60B equivalent

    Abstract: 60N60B2-7Y 7N60C-2X 7N60B-2X 10n60b ixgd 28N12 60N60C2-7Y 20N120 16N60C2
    Text: Chip-Shortform2004.pmd Insulated Gate Bipolar Transistors G-Series Type VCES VCE sat @ IC Chip type Chip size dimensions 6 TJM = 150°C V V A mm mils Source bond wire Equivalent device recommended data sheet 26.10.2004, 12:44 High Gain High Gain High Gain


    Original
    PDF 7N60B-2X 7N60C-2X 16N60B2-3X 16N60C2-3X 30N60B2-4X 30N60C2-4X 40N60B2-5Y 40N60C2-5Y 60N60B2-7Y 60N60C2-7Y 7N60B equivalent 10n60b ixgd 28N12 20N120 16N60C2

    7N60B equivalent

    Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
    Text: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches


    Original
    PDF MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2