C1740S

Abstract: c1740-s 1740S 2SC17 2SA933LN 2SA933S BU100
Contextual Info: 2SC 1740LN /2S C 1740S LN |s - j > v 7s $ / I ransistors 2S C 1 7 40ä L N ä • 2SC1 7 40S LN i t \$ * V 7 } \r t\/—m Epitaxial Planar NPN Silicon Transistors mm • « * NPN y ' J - 1 > f ö l Ä & I M i l l i f f l / L o w Freq. Low Noise Amp. • ^ - } K T t - j i / Di"10nSi0nS U n * : mn1

SFS1601G

Abstract: SFS1608G SFS1602G
Contextual Info: is TAIWAN SEMICONDUCTOR SFS1601G - SFS1608G 16.0 AMPS. Surface Mount Super Fast Rectifiers RoHS D2PAK COMPLIANCE .185 4.701 .175(4.44 Features ❖ •fr 4- 4- Glass passivated junction chip High efficiency, low VF High current capability High reliability

LTRG

Contextual Info: “H Y U N D A I HYM5V64224A R-Series Unbuffered 2M x 64-bit CMOS DRAM MODULE with EXTENDED DATA OUT DESCRIPTION The HYM5V64224A is a 2M x 64-bit EDO mode CMOS DRAM module consisting of four HY5V18164B 42/42 pin SOJ or 44/50 pin TSOP-II and one 2048bit EEPROM on a 168 pin glass-epoxy printed circuit board. 0 1mF and

TFK 03 d 36

Contextual Info: 19-1124; Rev0; 9/96 A lilX IV M Low-Power, 13-B it VoÊtage-Output DAC w ith S e ria l In te rfa c e The serial interface is compatible with either SPI / QSPI™ or Microwire™. The DAC has a double-buffered input organized as an input register followed by a DAC

Contextual Info: • « Y U N P ftl • HYM5V72A804A N-Series Buffered 8Mx72 bit EDO DRAM MODULE based on 4Mx4 DRAM, with ECC, 3.3V, 4K-Refresh GENERAL DESCRIPTION The HYM5V72A804A N-Series is a 8Mx72-bit Extended Data Out mode CMOS DRAM module consisting of thirty-six HY51V16404A in 24/26 pin TSOP-II and two 16-bit BiCMOS line driver in TSSOP on a 168 pin

M5214L

Abstract: UPC1190C TA7158P UPC1235C hitachi FM stereo MPX Decoder M5169P M51381P TA7157AP BA515 TA7204P
Contextual Info: B3TOSHIBA TO SH I B A MODEL NO. DESCRIPTIONS TA 706 3P Pre-amplifier TA 7 0 6 6 P U n iv er sa l TA 71 20 P Pre-amplifier TA7122BP High vo lt ag e TA7129AP ff for car stereo amplifier for car st ereo pre-amplifier n ft TA 7 1 3 0 P EM-IE a m p l i f i e r with d e t e c t o r

SF11G

Abstract: SF18G
Contextual Info: IM TAIWAN SEMICONDUCTOR RoHS COMPLIANCE SF11G - SF18G 1.0 AMP. Glass Passivated Super Fast Rectifiers DO-41 -xaFeatures > -4A -yA High efficiency, low VF High current capability High reliability High surge current capability Low pow er loss. For use in low voltage, high frequency inventor, free

HYM536410CM

Contextual Info: -HYUNDAI - • HYM536410C M-Series 4Mx36 bit FP DRAM MODULE based on 4Mx4 DRAM, with Parity, 5V, 2K-Refresh GENERAL DESCRIPTION The HYM536410C M-Series is a 4Mx36-bit Fast Page mode CMOS DRAM m odule consisting o f eight H Y5117400C in 24/26 pin SOJ and four HY514100A in 20/26 pin SOJ on a 72 pin glass-epoxy printed

1602G

Abstract: 1603G HERF1601G HERF1608G
Contextual Info: i s TAIWAN SEMICONDUCTOR HERF1601G - HERF1608G Isolated 16.0 AMPS. Glass Passivated High Efficient Rectifiers RoHS COMPLIANCE ITQ-220AB .121 3.1 .098(2.5) Features •0A -vA •4* UL Recognized File # E-326243 Glass passivated chip junction. High efficiency, Low VF