apd456
Abstract: No abstract text available
Text: 9 MOS INTEGRATED CIRCUIT pPD4564441,4564841,4564163 for Rev. E 64 M-bit Synchronous DRAM 4-bank, LVTTL Description The pPD4564441, 4564841, 4564163 are high-speed 67,108,864-bit synchronous dynamic random-access memories, organized as 4,194,304x4x4, 2,097,152x8x4, 1,048,576x16x4 word x bit x bank , respectively.
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pPD4564441
pPD4564441,
864-bit
304x4x4,
152x8x4,
576x16x4
54-pin
apd456
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Untitled
Abstract: No abstract text available
Text: 33 HftR ? : 3 0 HA-5020/883 10OMHz Current Feedback Video Amplifier March1993 Features Description • This Circuit is Processed in Accordance to Mii-Std883 and Is Fully Conformant Under the Provisions of Paragraph 1.2.1. The HA-5020/883 is a wide bandwidth, high slew rate
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HA-5020/883
10OMHz
Mii-Std883
HA-5020/883
1-800-4-HARRIS
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501RP
Abstract: No abstract text available
Text: HA5023/883 & W AR A D V A N C E IN FO RM ATIO N juiy 1994 Dual 10OMHz Video Current Feedback Amplifier Features Description This Circuit is Processed in Accordance to MIL-STD883 and is Fully Conform ant Under the Provisions of Paragraph 1.2.1. • W ide Unity Gain B a n d w id th . 125MHz
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HA5023/883
10OMHz
HA5023/883
HA-5020/883
501RP
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Untitled
Abstract: No abstract text available
Text: TEKTRONIX IN C / TRI ÚUINT SbE D • ÓTDÍaSlñ GD0Q3Ö0 T Q T R û T * 5 £ - l 5 le s a li ^ ' 9 a B i t L o g ic ÄB¥ÄM€E High Speed DRAM and SRAM Driver/Translator 10OMHZ Clock - 5 ns Delay Time 10G PicoLogic Family_ FEATURES 90 mA output capability for driving large
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10OMHZ
050P3
0080P
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Untitled
Abstract: No abstract text available
Text: C IÏ H A R R IS H S EMI CONDUCTOR January 1995 A - 5 2 10OMHz Current Feedback Video Amplifier Description Features Wide Unity Gain Bandwidth. 100MHz Slew R ate. 800V/|is
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10OMHz
100MHz
00b004b
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Untitled
Abstract: No abstract text available
Text: SURFACE MOUNT Ferrite Chip Beads NCB Series STYLE 1 EIA Size Chips STYLE 2 TERMINATION (Nickel Barrier With Solder Plate Finish) ^- YZZZZ2 PART NUMBERING SYSTEM NCB 0805 A 121 V S ///A TR^ Packaging: TR = Tape a nd Reel - Im pedance at 10OMhz 3 d ig it co d e ; firs t tw o d ig its a re s ig n ifica n t th ird d ig it is no. of ze ro s
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10OMhz
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Untitled
Abstract: No abstract text available
Text: m HA-5004 HARRIS S E M I C O N D U C T O R March1993 10OMHz Current Feedback Amplifier Features Description • Slew R ate. 1200V/|is The HA-5004 current feedback amplifier is a video/wideband amplifier optimized for low gain applications. The design is
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HA-5004
10OMHz
HA-5004
100MHz
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FERRANTI ELECTRONICS
Abstract: ferranti electron gun CRT Ferranti Semiconductors 4946 ZN454CJ ZN464CJ 74605 Ferranti iNTEGRATED circuits
Text: ì T C r i p le o n v e 4 - B r t e it V id e o D - A ZN 454C J r ADVANCE PRODUCT INFORMATION FEATURES DESCRIPTION • 3 Video D AC's - Ideal for Colour Graphics • Fast, 8ns Settling Time • Update Rates to 10OMHz The Z N 45 4 C J consists of three 4-bit D-A
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100MHz
ZN454CJ
203047F
ZN454CJ
28-Lead
FERRANTI ELECTRONICS
ferranti
electron gun CRT
Ferranti Semiconductors
4946
ZN464CJ
74605
Ferranti iNTEGRATED circuits
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Untitled
Abstract: No abstract text available
Text: IBM13M13734BCA 128M x 72 2-Bank Registered SDRAM Module Features • 168-Pin Registered 8-Byte Dual In-Line Memory Module • 128Mx72 Synchronous DRAM DIMM -75A : R eg: : DIMM CAS Latency : f CK ; Clock Frequency ; Clock Cycle IW : | Clock Access Tim e j Units ;
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IBM13M13734BCA
168-Pin
128Mx72
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CY2282-1
Abstract: CY2282-11S DD25
Text: CY2282-1 CY2282-11S PRELIMINARY r'YPRFÇÇ 10O-MHz Pentium II Clock Synthesizer/Driver with Spread Spectrum and USB for Desktop PCs Features 3.3 V USB clocks at 48 MHz, one 3.3 V reference clock at 14.318 M Hz, and one 2 .5 V A P IC clo ck at 14.318 MHz.
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CY2282-1
CY2282-11S
100-MHz
CY2282-11S
28-pin
CY228erein
CY2282-1
DD25
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30-RCT
Abstract: 208H
Text: Sch em atic: One of Eight 1CT:1 CT RJ45 RX- RD+ 3 o- 8 7 6 5 4 3 2 1 Shld RCT 5 0 RX+ RD- 6 0 - TD+ 1CT: 1CT 1o- TX- TCT 4 0 TD - TX+ 2o- R1 S R2 R3 -L R4 1000pF 2KV R1,R2,R3,R4: 75 OHMS ±1% .J 8 / E lectrical S p ecificatio n s: 25°C Isolation Voltage:
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30-RCT
1000pF
350uH
100KHz
100mV
100KHz-100MHz)
100MHz-125MHz)
-18dB
30MHz
80MHz
208H
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Untitled
Abstract: No abstract text available
Text: S i GEC P L E S S E Y APRIL 1994 ADVANCE INFORMATION S E M I C O N D U C T O R S SL3522 500MHz 75dB LOGARITHMIC / LIMITING AMPLIFIER Supersedes Edition in Professional Products 1C Handbook May 1991 The SL3522 is a monolithic seven stage successive detection logarithmic amplifier integrated circuit for use in the
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SL3522
500MHz
SL3522
100MHz
SL3522pad
37bflS22
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Untitled
Abstract: No abstract text available
Text: S i GEC PLESSEY S I M 1 C O i\ 1> U .T O H ADVANCE INFORMATION S SP8855D 1.7GHz PARALLEL LOAD PROFESSIONAL SYNTHESISER The SP88550 is one of a family of parallel load synthesisers containing all the elements apart from the loop amplifier to fabricate a PLL synthesis loop. Other parts in the
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SP8855D
SP88550
SP8852D
SP8854D
SP8855D
OP-27G
L7812CP
BB405B
40MHz
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RJ-9
Abstract: 208H
Text: S c h e m a ti c : S in g le r ' P a rt I 1CT: 1 CT .J Lsf i leu ISOLATION: 1500Vrm s TURNS RATIO: (PRI/SEC) 1CT:1CT ±2% OCL: 350uH MIN SIOOKHz 100mV BmADC RISE TIME: 2.50ns Max. INSERTION LOSS: — 1.1 dB Max 0.5M H z-100M H z 12 o - R ig lit LED SCHEMATIC
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1000PF
500Vrms
350uH
100KHz
100mV
5MHz-100MHz
-18dB
5MHz-40MHz
12-20LOG
-35dB
RJ-9
208H
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TB 1226 BN
Abstract: 531 T70 n03 0AS001 B05AD 2U 34
Text: in y Intel 450NX PCIset 82454NX PCI Expander Bridge PXB 82453NX Data Path Multiplexor (MUX) 82452NX RAS/CAS Generator (RCG) 82451 NX Memory & I/O Controller (MIOC) Revision 1.3 March 1999 Intel Corporation 1998,1999 Information in this document is provided in connection with Intel products. No license, express or
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450NX
82454NX
82453NX
82452NX
TB 1226 BN
531 T70 n03
0AS001
B05AD
2U 34
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Untitled
Abstract: No abstract text available
Text: cP IITSU November 1998 Revision 1.1 data sheet PDC16UV7284C- 102/103 T-S 128MByte (16Mx 72) CMOS, PC/100 Synchronous DRAM Module General Description The PDC16UV7284C-(102/103)T-S is a high performance, 64-megabyte synchronous, dynamic RAM module organized as 16M
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PDC16UV7284C-
128MByte
PC/100
64-megabyte
168-pin,
F64842C-
128MByte
100Mhz
100Mhz,
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038329
Abstract: No abstract text available
Text: IBM038329PQ6 IBM038329NQ6 256K x 32 Synchronous Graphics RAM Features • Fully synchronous; all signals registered on pos itive edge ot system clock. Single 3.3V + 0.3 100-pin LQFP 0.65mm lead pitch • Internal pipelined operation; column address can be changed every clock cycle.
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IBM038329PQ6
IBM038329NQ6
10OMhz
cycles/16ms
cycles/128ms
038329
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Untitled
Abstract: No abstract text available
Text: cP IITSU July 1998 Revision 1.0 data sheet P D C 16 R V 7 2 4 4 J - 102/10 3 T -S 128MByte (16Mx 72) CMOS, PC/100 Synchronous DRAM Module - ECC (Registered) General Description The PDC16RV7244J-(102/103)T-S is a high performance, 128-megabyte synchronous, dynamic RAM module organized as 16M
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128MByte
PC/100
PDC16RV7244J-
128-megabyte
168-pin,
F64442C-(
16Mx4
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Untitled
Abstract: No abstract text available
Text: cP IITSU July 1998 Revision 1.1 data sheet GOB512UV6431 A -(67/84/100/125)Q-S 4MByte (512Kx 64) CMOS Synchronous Graphic Module General Description The GOB512UV6431 (A)-(67/84/100/125)Q-S is a high performance, 4-megabtye synchronous, graphic RAM module organized
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GOB512UV6431
512Kx
GOB512UV6431
144-pin,
B81G83222-
256Kx32
GOB512UV6431A
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L133A
Abstract: No abstract text available
Text: CY7C1346 64K X 36 Synchronous-Pipelined Cache RAM Features The C Y 7 C 1 346 I/O pins can op era te at eith er the 2.5V o r the 3.3V level; the I/O pins are 3.3 V to le ra n t w h en V DDQ=2.5V. • Supports 10O-MHz bus for Pentium and PowerPC operations with zero wait states
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CY7C1346
10O-MHz
166-MHz
133-MHz
100-MHz
L133A
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Untitled
Abstract: No abstract text available
Text: Preliminary CMOS SDRAM KM44S32030 8M X 4Bit X 4 Banks Synchronous DRAM GENERAL DESCRIPTION FEATURES The KM 44S32030 is 134,217,728 bits synchronous high data • JEDEC standard 3.3V pow er supply • LVTTL com patible with m ultiplexed address rate Dynam ic RAM organized as 4 x 8,388,608 w ords by 4 bits,
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KM44S32030
44S32030
10/AP
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Untitled
Abstract: No abstract text available
Text: TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT TC59S6416AFT, TC59S6408AFT, TC59S6404AFT 1,048,576 WORDS X 4 BANK X 16 BITS 2,097,152 WORDS X 4 BANK X 8 BITS 4,194,304 WORDS X 4 BANK X 4 BITS SYNCHRONOUS DRAM Description TC59S6416FT is a CMOS synchronous dynamic random access memory organized as 1,048,576-words x4-banks x16-bits and
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TC59S6416AFT,
TC59S6408AFT,
TC59S6404AFT
TC59S6416FT
576-words
x16-bits
TC59S6408FTis
152-wordsx4-banks
andTC59S1604FTorganized
304-wordsx4-banks
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Untitled
Abstract: No abstract text available
Text: DIRFRD006 REVISION RECORD REV Part Number: ECO CHKD 2 —6u 1 —3 u ” 3 —15 u ” 5 —5 0 u ” 4 —3 0 u ” O -W /O LOGO — 1 —W /” F” LOGO * 21.5 1 6 .0 DRFT E5TAB- G 1XXXX-L KO-LEFT LEDiGREEN LED, RIGHT LED:G+0 LED • K4—LEFT LED:GREEN LED, RIGHT LED:Y+0 LED
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DIRFRD006
DATE2005/4/4
DATE200S/4/4
350uH
ATE2005/
DATE2009/4/4
10PIN)
D4/02/05
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Untitled
Abstract: No abstract text available
Text: DIRFRD006 *2 5 ,5 5 *6,50 | o S = > 1 n- *7,73 w4 *3,18 *14,36 1. VOLTAGE RATING 125 VAC RMS. 2 . CURRENT RATING 1.5 AMP. 3. CONTACT RESISTANCE 3 5 MILLIOHMS MAX. 4. INSULATION RESISTANCE 10 00 MEGOHMS MIN @ 5 0 0 VDC. 5. DIELECTRIC STRENGTH 10 00 VAC RMS 60H z, 1 MIN.
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DIRFRD006
60SEC
CYC60sec
1500VAC
DATE2005/12/17
DATE200S
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