50N06LE
Abstract: No abstract text available
Text: J W S S em icon du cto r RFG50N06LE, RFP50N06LE, RF1S50N06LESM I April 1999 Data Sheet 50A, 60V, 0.022 Ohm, ESD Rated, Logic Level N-Channel Power MOSFETs Features • 50A,60V These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature
|
OCR Scan
|
RFG50N06LE,
RFP50N06LE,
RF1S50N06LESM
TA49164.
022i2
50e-4
53e-6)
54e-3
21e-6)
50N06LE
|
PDF
|
Untitled
Abstract: No abstract text available
Text: HUF75307P3, HUF75307D3, HUF75307D3S Semiconductor Data Sheet June 1999 15A, 55V, 0.090 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,
|
OCR Scan
|
HUF75307P3,
HUF75307D3,
HUF75307D3S
HUF75307
|
PDF
|
lambda IC 101
Abstract: AN7254 AN7260 ITF86172SK8T MS-012AA TB370 vj04
Text: ITF86172SK8T interrii January. m i Data Sheet 10A, 30V, 0.016 Ohm, P-Channel, Logic Level, Power MOSFET File Number 4809.1 Features • Ultra Low On-Resistance Packaging ‘ rDS ON = 0 .0 1 6£i, v gs = - 1 0 V S 0 8 (JEDEC MS-012AA) ‘ rDS(ON) = 0.023i2, VGS = - 4 .5 V
|
OCR Scan
|
MS-012AA)
ITF86172SK8T
ITF86172SK8T
MS-012AA
330mm
EIA-481
lambda IC 101
AN7254
AN7260
MS-012AA
TB370
vj04
|
PDF
|
76105DK8
Abstract: No abstract text available
Text: HUF76105DK8 S e m ic o n d u c to r October 1998 Data Sheet • Logic Level Gate Drive This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in
|
OCR Scan
|
HUF76105DK8
1-800-4-HARRIS
76105DK8
|
PDF
|
F10P03L
Abstract: 10P03L p-channel mosfet BL Harris Semiconductor Integrated Circuits N10T TC227 RFD10P03L RFD10P03LSM RFD10P03LSM9A RFP10P03L
Text: RFD10P03L, RFD10P03LSM, RFP10P03L HARRIS S E M I C O N D U C T O R 10A, 30V, 0.200&, Logic Level P-Channel Power MOSFET May 1997 Features Description • 10A, 30V These products are P-Channel power MOSFETs manufac tured using the MegaFET process. This process, which uses
|
OCR Scan
|
RFD10P03L,
RFD10P03LSM,
RFP10P03L
1-800-4-HARRIS
F10P03L
10P03L
p-channel mosfet BL
Harris Semiconductor Integrated Circuits
N10T
TC227
RFD10P03L
RFD10P03LSM
RFD10P03LSM9A
RFP10P03L
|
PDF
|
60P06E
Abstract: 6b69e RS111
Text: RFG60P06E m HARRIS S E M I C O N D U C T O R 60A, 60V, ESD Rated, Avalanche Rated, P-Channel Enhancem ent-M ode Power MOSFET J a n u a ry 199 6 Features Package JEDEC STYLE TO-247 • 6 0 A ,6 0 V SOURCE • * *D S O N = 0 . 0 3 0 1 2 • T e m p e ra tu re C o m p e n s a tin g P S P IC E M o d e l
|
OCR Scan
|
RFG60P06E
O-247
72e-3
43e-3
91e-7
98e-9
11e-1
34e-3
46e-12)
15e-10
60P06E
6b69e
RS111
|
PDF
|
Untitled
Abstract: No abstract text available
Text: P *3 3 S RFG60P03, RFP60P03, RF1S60P03, RF1S60P03SM 60A, 30V, 0.027 Ohm, P-Channel Power MOSFETs September 1998 Features Description • 60A, 30V These P-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives opti
|
OCR Scan
|
RFG60P03,
RFP60P03,
RF1S60P03,
RF1S60P03SM
0-027Q
69e-4
33e-6
05e-9
33e-8)
80e-2
|
PDF
|
75307D
Abstract: No abstract text available
Text: HUF75307P3, HUF75307D3, HUF75307D3S Semiconductor Data Sheet March 1999 15A, 55V, 0.090 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,
|
OCR Scan
|
HUF75307P3,
HUF75307D3,
HUF75307D3S
HUF75307
75307D
|
PDF
|
Untitled
Abstract: No abstract text available
Text: HUF75332G3, HUF75332P3, HUF75332S3S Semiconductor Data Sheet June 1999 60A, 55V, 0.019 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,
|
OCR Scan
|
HUF75332G3,
HUF75332P3,
HUF75332S3S
58e-2
HUF75332
00e-3
50e-3
85e-2
|
PDF
|
Untitled
Abstract: No abstract text available
Text: HUF75639G3, HUF75639P3, HUF75639S3S Semiconductor Data Sheet June 1999 56A, 100V, 0.025 Ohm, N-Channel UltraFET Power MOSFETs F ile N u m b er 4477.6 Features • 56A, 100V These N-Channel power MOSFETs are manufactured using the innovative UltraFET process.
|
OCR Scan
|
HUF75639G3,
HUF75639P3,
HUF75639S3S
54e-2
98e-1
99e-1
97e-2
HUF75639
95e-3
95e-2
|
PDF
|
AN7254
Abstract: RF650N06 RFP50N05 RFP50N06 AN-7254 RFG50N05 mosfat 24v mosfat RFP70N06 34069
Text: 3 } H a r r is May 1992 R FP 50N 05 R FG 50N 05 N-Channel Enhancement-Mode Power Field-Effect Transistors MegaFETs Features Package TO-220AB TOP VIEW • 50 A , 5 0 V • rDS(on) = 0 .0 2 2 0 DRAIN (FLANGE) • UIS SO A Rating Curve (Single Pulse) u • SO A is P ow er-D issipation Lim ited
|
OCR Scan
|
RFP50N05
RFG50N05
0-022O
11e-12
91e-3TRS1
26e-3
07e-6
12e-9
AN7254
RF650N06
RFP50N06
AN-7254
mosfat 24v
mosfat
RFP70N06
34069
|
PDF
|
65e9
Abstract: TB370 AN7254 AN7260 ITF86116SQT
Text: ITF86116SQT interrii 10A, 30 V, 0.012 Ohm, N-Channel, Logic Level, Power MOSFET mi J a n u a ry . Data Sheet File Number 4808.1 Features • Ultra Low On-Resistance ‘ rDS ON = 0.012£i, VGs = 10V Packaging ‘ rDS(ON) = 0.016£i, VGs = 4.5V TSSOP8 • Gate to Source Protection Diode
|
OCR Scan
|
ITF86116SQT
ITF86116SQT
65e9
TB370
AN7254
AN7260
|
PDF
|
TSOP-6 .54
Abstract: AN7254 AN7260 ITF87012SVT SC-95 TB370
Text: ITF87012SVT interrii January. m i Data Sheet PRELIMINARY 6A, 20 V, 0.035 Ohm, N-Channel, 2.5V Specified Power MOSFET File Number 4810.1 Features • Ultra Low On-Resistance ‘ rDS ON = 0.035i2, VGs = 4.5V Packaging ‘ rDS(ON) = 0.038i2, VGs = 4.0V TSOP-6
|
OCR Scan
|
ITF87012SVT
00e-3
10e-2
00e-2
00e-1
20e-2
00e-2
TSOP-6 .54
AN7254
AN7260
ITF87012SVT
SC-95
TB370
|
PDF
|
KP120
Abstract: No abstract text available
Text: HUF76132P3, HUF76132S3S S em iconductor Data Sheet 75A, 30V, 0.011 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,
|
OCR Scan
|
HUF76132P3,
HUF76132S3S
51e-2
03e-2
05e-2
81e-1
45e-1
HUF76132
50e-3
18e-2
KP120
|
PDF
|
|
|
Untitled
Abstract: No abstract text available
Text: RFT2P03L Semiconductor October 1998 Data Sheet 2.1 A, 30 V, 0.150 Ohm, P-Channel Logic Level, Power MOSFET File Number 4574.1 Features • 2.1 A, 30V This product is a P-Channel power M O S F E T manufactured • r DS ON = 0 .1 5 0 i2 using the M eg aF E T process. This process, which uses
|
OCR Scan
|
RFT2P03L
1-800-4-HARR
|
PDF
|
75639p
Abstract: No abstract text available
Text: HUF75639G3, HUF75639P3, HUF75639S3, HUF75639S3S Semiconductor October 1998 Data Sheet 53A, 100V, 0.028 Ohm, N-Channel UltraFET Power MOSFETs File Number 4477.3 Features 5 3 A ,1 0 0 V These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This
|
OCR Scan
|
HUF75639G3,
HUF75639P3,
HUF75639S3,
HUF75639S3S
1-800-4-HARR
75639p
|
PDF
|
fp50n06
Abstract: F50N06LE 50N06LE rfp50n06 T0-262AA
Text: U A D D ic RFG50N06LE. RFP50N06LE, RF1S50N06LE, RF1S50N06LESM 50A, 60V, ESD Rated, Avalanche Rated, Logic Level N-Channel Enhancement-Mode Power MOSFETs juiy 1996 Features Packages JEDEC STYLE TO-247 • 50A,60V • rDS ON =0.022i2 • • • • • SOURCE
|
OCR Scan
|
RFG50N06LE.
RFP50N06LE,
RF1S50N06LE,
RF1S50N06LESM
O-247
022i2
RFG50N06LE,
RF1S50N06LESM
fp50n06
F50N06LE
50N06LE
rfp50n06
T0-262AA
|
PDF
|
in3600
Abstract: No abstract text available
Text: • 1N4150-1 AVAILABLE IN JAN, JANTX, AND JANTXV PER MIL-PRF-19500/231 • 1N3600 AVAILABLE IN JAN, JANTX, AND JANTXV PER MIL-PRF-19500/231 1N4150 and 1N4150-1 and 1N3600 •SWITCHING DIODES • HERMETICALLY SEALED • METALLURGICALLY BONDED . DOUBLE PLUG CONSTRUCTION
|
OCR Scan
|
MIL-PRF-19500/231
1N3600
1N4150-1
1N4150
1N3600
10toXK
IN4150,
IN4150-1
in3600
|
PDF
|
76639p
Abstract: AN9321 AN9322 HUF76639P3 HUF76639S3S HUF76639S3ST TB334 76639S 92e2 OT 180
Text: HUF76639P3, HUF76639S3S interrii Data Sheet November 1999 File Num ber 4694.3 50A, 100V, 0.027 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Packaging Features JEDEC TO-220AB JEDEC TO-263AB SO U R CE DRAIN FLA N G E • Ultra Low On-Resistance ‘ rDS(ON) = 0.026i2, VGS = 10V
|
OCR Scan
|
O-220AB
O-263AB
HUF76639P3
HUF76639S3S
HUF76639P3,
HUF76639P3
O-220AB
76639P
HUF76639S3S
76639p
AN9321
AN9322
HUF76639S3ST
TB334
76639S
92e2
OT 180
|
PDF
|
AN7254
Abstract: AN7260 ITF87052SVT SC-95 TB370 0190-S
Text: ITF87052SVT interrii J a n u a ry . Data Sheet PRELIMINARY 3A, 20V, 0.115 Ohm, P-Channel, 2.5V Specified Power MOSFET m File Num ber i 4800.2 Features • Ultra Low On-Resistance ‘ rDS ON = 0-115£2, v q s = -4 .5 V Packaging ‘ rDS(ON) = 0-120£2, v q s = -4 .0 V
|
OCR Scan
|
ITF87052SVT
120avGS
AN7254
AN7260
ITF87052SVT
SC-95
TB370
0190-S
|
PDF
|
75639p
Abstract: 75639G
Text: HUF75639G3, HUF75639P3, HUF75639S3, HUF75639S3S Semiconductor October 1998 Data Sheet 53A, 100 V, 0.028 Ohm, N-Channel UltraFET Power MOSFETs File Num ber 4477.3 Features • 53A,100V These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This
|
OCR Scan
|
HUF75639G3,
HUF75639P3,
HUF75639S3,
HUF75639S3S
1-800-4-HARR
75639p
75639G
|
PDF
|
61E2
Abstract: No abstract text available
Text: HUF76131SK8 November 1998 Data Sheet 10A, 30V, 0.013 Ohm, N-Channel, Logic Level UltraFET Power MOSFET File Number 4396.3 Features • Logic Level Gate Drive This N-Channel power MOSFET is manufactured using the innovative w UltraFET process. This advanced
|
OCR Scan
|
HUF76131SK8
HUF76131SK8
MS-012AA
61E2
|
PDF
|
Untitled
Abstract: No abstract text available
Text: HUF75329D3, HUF75329D3S Semiconductor March 1999 Data Sheet 20A, 55V, 0.026 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,
|
OCR Scan
|
HUF75329D3,
HUF75329D3S
57e-2
13e-1
26e-2
HUF75329D
80e-3
00e-2
00e-3
|
PDF
|
75344G
Abstract: 75344P 75344 RELAY TC1 TA75344 HUF75344 HUF75344G3 HUF75344P3 HUF75344S3S HUF75344S3ST
Text: interrii HUF75344G3, HUF75344P3, HUF75344S3S January 2000 Data Sheet 75A, 55V, 0.008 Ohm, N-Channel UltraFET Power MOSFETs -9 These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,
|
OCR Scan
|
HUF75344G3,
HUF75344P3,
HUF75344S3S
75344G
75344P
75344
RELAY TC1
TA75344
HUF75344
HUF75344G3
HUF75344P3
HUF75344S3S
HUF75344S3ST
|
PDF
|
