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    Rochester Electronics LLC RFP50N05

    N-CHANNEL POWER MOSFET
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    DigiKey RFP50N05 Bulk 22,764 325
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    onsemi RFP50N05L

    MOSFET N-CH 50V 50A TO220-3
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    DigiKey RFP50N05L Tube
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    Renesas Electronics Corporation RFP50N05

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    Fairchild Semiconductor Corporation RFP50N05L

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    Harris Semiconductor RFP50N05

    MOSFET Transistor, N-Channel, TO-220AB
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    Quest Components RFP50N05 1,166
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    RFP50N05 640
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    RFP50N05 12
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    Rochester Electronics RFP50N05 22,264 1
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    RFP50N05 Datasheets (13)

    Part ECAD Model Manufacturer Description Curated Type PDF
    RFP50N05 Harris Semiconductor Power MOSFET Selection Guide Original PDF
    RFP50N05 Intersil 20A, 500V, 0.270 Ohm, N-Channel Power MOSFET Original PDF
    RFP50N05 Intersil 50A, 50V, 0.022 ?, N-Channel Power MOSFETs Original PDF
    RFP50N05 Toshiba Power MOSFETs Cross Reference Guide Original PDF
    RFP50N05 Harris Semiconductor Power Field-Effect Transistor (MegaFET) Scan PDF
    RFP50N05 Harris Semiconductor Power MOSFET Data Book 1990 Scan PDF
    RFP50N05 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    RFP50N05L Fairchild Semiconductor 50A, 50V, 0.022 ?, Logic Level, N-Channel Power Original PDF
    RFP50N05L Harris Semiconductor Power MOSFET Selection Guide Original PDF
    RFP50N05L Intersil 50A, 50V, 0.022 ?, Logic Level, N-Channel Power MOSFETs Original PDF
    RFP50N05L Toshiba Power MOSFETs Cross Reference Guide Original PDF
    RFP50N05L Intersil Over 600 obsolete distributor catalogs now available on the Datasheet Archive - MOSFET, N Channel, Logic Level, 50V, 50A, Pkg Style TO220AB Scan PDF
    RFP50N05L Unknown Shortform Datasheet & Cross References Data Short Form PDF

    RFP50N05 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IRF540 complementary

    Abstract: IRFZ44N complementary std2n52 TOSHIBA IRFZ44A datasheet STP2NA60 SSH6N80 rfp60n06 ste38na50 IRF630 complementary IRF3205 IR
    Text: Sales type RFP6N50 RFD16N03LSM RFP15N05L RFP50N05 RFP15N05 RFP50N05L RFD14N05L RFD14N05LSM RFD14N05SM RFP14N05L RFP25N05 RFP14N05 HUF75344P3 HUF75344S3S HUF75345S3S HUF75345G3 HUF75343S3S HUF75307D3S HUF75344G3 HUF75345P3 HUF75343P3 HUF5343G3 HUF75321P3 HUF75329P3


    Original     		PDF RFP6N50 RFD16N03LSM RFP15N05L RFP50N05 RFP15N05 RFP50N05L RFD14N05L RFD14N05LSM RFD14N05SM RFP14N05L IRF540 complementary IRFZ44N complementary std2n52 TOSHIBA IRFZ44A datasheet STP2NA60 SSH6N80 rfp60n06 ste38na50 IRF630 complementary IRF3205 IR

    F50n05l

    Abstract: f50n05 50130A SST12CP11-QVCE AN7254 RFP50N05L RFP50N05L9A TB334
    Text: RFP50N05L Data Sheet 50A, 50V, 0.022 Ohm, Logic Level, N-Channel Power MOSFETs These are logic-level N-channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon,


    Original     		PDF RFP50N05L F50n05l f50n05 50130A SST12CP11-QVCE AN7254 RFP50N05L RFP50N05L9A TB334

    TA09872

    Abstract: AN7254 RFG50N05L RFP50N05L RFP50N05L9A TB334 RFG50N
    Text: RFG50N05L, RFP50N05L Data Sheet 50A, 50V, 0.022 Ohm, Logic Level, N-Channel Power MOSFETs These are logic-level N-channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon,


    Original     		PDF RFG50N05L, RFP50N05L TA09872 AN7254 RFG50N05L RFP50N05L RFP50N05L9A TB334 RFG50N

    50130A

    Abstract: RFP50N05L9A AN7254 RFG50N05L RFP50N05L TB334
    Text: RFG50N05L, RFP50N05L Data Sheet 50A, 50V, 0.022 Ohm, Logic Level, N-Channel Power MOSFETs These are logic-level N-channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon,


    Original     		PDF RFG50N05L, RFP50N05L 50130A RFP50N05L9A AN7254 RFG50N05L RFP50N05L TB334

    TA09872

    Abstract: No abstract text available
    Text: RFG50N05L, RFP50N05L Data Sheet Title FP5 05L G50 5L bt A, V, 22 m, gic vel, Cha el wer OSTs) utho July 1999 50A, 50V, 0.022 Ohm, Logic Level, N-Channel Power MOSFETs Features These are logic-level N-channel power MOSFETs manufactured using the MegaFET process. This process,


    Original     		PDF RFG50N05L, RFP50N05L O-247 TB334 TA09872

    MOSFET 4465

    Abstract: circuit 4466 9310 AN7254 RFG50N05 RFP50N05 RFG50N05 to-247
    Text: RFG50N05, RFP50N05 Data Sheet 50A, 50V, 0.022 Ohm, N-Channel Power MOSFETs These are N-Channel power MOSFET’S manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding


    Original     		PDF RFG50N05, RFP50N05 175oC TA09772. MOSFET 4465 circuit 4466 9310 AN7254 RFG50N05 RFP50N05 RFG50N05 to-247

    fqp60n06

    Abstract: spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640
    Text: MOSFETs Progress in Power Switching Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions FAIRCHILD / SAMSUNG FAIRCHILD / INTERSIL HITACHI ON-SEMI PHILIPS INFINEON SIEMENS TEMIC / VISHAY TOSHIBA IR IXYS ST Nearest Preferred Supplier


    Original     		PDF STP7NB40 STT3PF30L STD20NE03L STP60NE03L-12 STP60NE03L-10 STP40NF03L STP80NE03L-06 STS4DPF30L fqp60n06 spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640

    BC548 TRANSISTOR REPLACEMENT

    Abstract: TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587
    Text: 5.2 5.4 5.46 5.124 5.130 5.130 5.140 5.180 Introduction Diodes & Rectifiers Transistors Triacs,Thyristors and Diacs Sensors Cross Reference General Application discretes Cross Reference Power discretes Cross Reference RF discretes Discrete Components 5.1 Introduction


    Original     		PDF BAP1321-02 BAP65-05 BAP65-03 BAP65-05W BAP65-02 BAP63-03 BAP63-02 BAP64-03 BAP64-02 BB143 BC548 TRANSISTOR REPLACEMENT TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587

    Complementary MOSFETs buz11

    Abstract: irfd120 Power MOSFET Selection Guide HRF3205 MOSFET Selection Guide IRFP440 BUZ71 IRFD120 HRF3205 equivalent IRF610 complementary IRFD110
    Text: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 | | ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12


    Original     		PDF 1-888-INTERSIL MS-012AA MO-153AA RF1K49090 RF1K49093 RF1K49092 ITF87056DQT ITF87072DK8T ITF87008DQT RF1K49223 Complementary MOSFETs buz11 irfd120 Power MOSFET Selection Guide HRF3205 MOSFET Selection Guide IRFP440 BUZ71 IRFD120 HRF3205 equivalent IRF610 complementary IRFD110

    TCA780

    Abstract: TFK U 111 B TFK U 4614 B TFK S 186 P TFK U 217 B TFK BP w 41 n TFK BPW 41 N Tfk 880 TFK 148 TDSR 5150 G
    Text: Industry Part Number 1N3245 1N3611GP 1N3612GP 1N3613GP 1N3614GP 1N3725 1N3957GP 1N4001GP 1N4002GP 1N4003GP 1N4004GP 1N4005GP 1N4006GP 1N4007GP 1N4245GP 1N4246GP 1N4247GP 1N4248GP 1N4249GP 1N4678.1N4717 1N4728A.1N4761A 1N4933GP 1N4934GP 1N4935GP 1N4936GP


    Original     		PDF 1N3245 1N3611GP 1N3612GP 1N3613GP 1N3614GP 1N3725 1N3957GP 1N4001GP 1N4002GP 1N4003GP TCA780 TFK U 111 B TFK U 4614 B TFK S 186 P TFK U 217 B TFK BP w 41 n TFK BPW 41 N Tfk 880 TFK 148 TDSR 5150 G

    12SnOFC

    Abstract: BQ37 PMC-90 PMC-90 leadframe material MKT-TO220B03 FDP3672 HRF3205 equivalent mosfet number Tamac4 a105 transistor HRF3205 equivalent
    Text: Date Created: 1/9/2004 Date Issued: 2/13/2004 PCN # 20040204 FORECAST CHANGE NOTIFICATION This is to inform you that a design and/or process change will be made to the following product s . This notification is for your information and concurrence. This is a preliminary notification. A final PCN will


    Original     		PDF HUF75343P3 HUF75542P3 HUF75631P3 HUF75645P3 HUF75939P3 HUF76107P3 HUF76132P3 HUF76143P3 HUF76419P3 HUF76432P3 12SnOFC BQ37 PMC-90 PMC-90 leadframe material MKT-TO220B03 FDP3672 HRF3205 equivalent mosfet number Tamac4 a105 transistor HRF3205 equivalent

    std2n52

    Abstract: stp2na60 buz102 equivalent SSH6N80 rfp60n06 replacement for IRL2203N BUZ91 equivalent RFP60N06LE IRFP460 cross reference buz91a equivalent
    Text: POWER MOSFETS CROSS REFERENCE Industry standard 2SK1119 2SK1120 2SK1151 2SK1152 2SK1153 2SK1154 2SK1155 2SK1156 2SK1157 2SK1158 2SK1159 2SK1160 2SK1161 2SK1164 2SK1166 2SK1167 2SK1168 2SK1169 2SK1170 2SK1199 2SK1202 2SK1203 2SK1204 2SK1205 2SK1231 2SK1232


    Original     		PDF 2SK1119 2SK1120 2SK1151 2SK1152 2SK1153 2SK1154 2SK1155 2SK1156 2SK1157 2SK1158 std2n52 stp2na60 buz102 equivalent SSH6N80 rfp60n06 replacement for IRL2203N BUZ91 equivalent RFP60N06LE IRFP460 cross reference buz91a equivalent

    AN6675

    Abstract: working principle of ic cd4066 F150 Voltage Regulator smd 5pin AN6680 AN6616 an6671 an6677 smd diode f54 m1a transistor smd AN6682
    Text: Application Note 66 August 1996 Linear Technology Magazine Circuit Collection, Volume II Power Products Richard Markell, Editor INTRODUCTION Application Note 66 is a compendium of “power circuits” from the first five years of Linear Technology. The objective


    Original     		PDF S-191 AN66-104 AN6675 working principle of ic cd4066 F150 Voltage Regulator smd 5pin AN6680 AN6616 an6671 an6677 smd diode f54 m1a transistor smd AN6682

    SSP35n03

    Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
    Text: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A


    Original     		PDF 5KE100A 5KE100CA 5KE10A 5KE10CA 5KE110A 5KE110CA 5KE11A 5KE11CA 5KE120A 5KE120CA SSP35n03 bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent

    hp laptop charging CIRCUIT diagram

    Abstract: cd4051 spice NPH-8-100AH 1k821j TL4426 0.1 MICROFARAD 120 ohm 300v 4N28 SPICE MODEL 74hc123 Spice CD4066 LTC485 Spice
    Text: LINEAR TECHNOLOGY FEBRUARY 1994 IN THIS ISSUE… COVER ARTICLE C-Load TM Op Amps Tame Instabilities . 1 VOLUME IV NUMBER 1 C-Load TM Op Amps Tame Instabilities by William Jett and George Feliz William Jett and George Feliz Editor's Page . 2


    Original     		PDF 500ksps LT1203: 150MHz LTC1065, 1-800-4-LINEAR hp laptop charging CIRCUIT diagram cd4051 spice NPH-8-100AH 1k821j TL4426 0.1 MICROFARAD 120 ohm 300v 4N28 SPICE MODEL 74hc123 Spice CD4066 LTC485 Spice

    irf540n irf640

    Abstract: IRF630 complementary IRF840 complementary irf630 irf640 IRF730 complementary irfp460 complementary MOSFET IRF540n complementary Complementary MOSFETs buz11 IRF9540 complementary Irfp250 irfp460
    Text: MOSFET Selection Trees Power MOSFET Products N-CHANNEL MOSFETs N-CHANNEL STANDARD GATE MOSFETs BUZ11 BUZ71 BUZ71A BUZ72A HRF3205 HRF3205S HRFZ44N HUF75307D3 HUF75307D3S HUF75307P3 HUF75307T3ST HUF75309D3 HUF75309D3S HUF75309P3 HUF75309T3ST HUF75321D3 HUF75321D3S


    Original     		PDF BUZ11 BUZ71 BUZ71A BUZ72A HRF3205 HRF3205S HRFZ44N HUF75307D3 HUF75307D3S HUF75307P3 irf540n irf640 IRF630 complementary IRF840 complementary irf630 irf640 IRF730 complementary irfp460 complementary MOSFET IRF540n complementary Complementary MOSFETs buz11 IRF9540 complementary Irfp250 irfp460

    fp50n05

    Abstract: 50n05
    Text: j h a r f r RFP50N05 RFG50N05 is May 1992 N -C hannel Enhancem ent-M ode Power Field-Effect Transistors (MegaFETs Features Package TO-220AB TOP VIEW • 50A, 50V • r DS(on) = 0 .0 2 2 fi DRAIN (FLANGE) • UIS SOA Rating Curve (Single Pulse) u • SOA is P o w e r-D issip atio n Lim ited


    OCR Scan     		PDF RFP50N05 RFG50N05 O-220AB O-247 RFG50N05 92CS-43040 BVD88 fp50n05 50n05

    RFG50N05

    Abstract: HRX-50 TI0H RFP50N05
    Text: £2 HARRIS 2-50 RFP50N05 RFG50N05 fciz N-Channel Enhancement-Mode Power Field-Effect Transistors MegaFETs May 1992 P ackag e Features TO-220AB TOP VIEW • 50A, 50V • rDS(on) = 0.022ft uo DRAIN . (FLANGE) • UIS SOA Rating Curve (Single Pulse) • SOA is Power-Dissipation Limited


    OCR Scan     		PDF RFP50N05 RFG50N05 022ft RFG50N05 CAPGEP50N0CCF3 92CS-43040 an-7254 an-7260) ins240b HRX-50 TI0H

    RFP50N05

    Abstract: AN72G4 AN7260
    Text: Power MegaFETs RFP50N05 File N um b er 2119 N-Channel Enhancement-Mode Power Field-Effect Transistors MegaFETs 50 A, 50 V rD s (o n ) = 0 .0 2 2 O N -C H A N N E L E N H A N C E M E N T M ODE Features: • S ingle p u lse avalanche e n e rg y ra ted » SO A is p o w e r-d is s ip a tio n lim ite d


    OCR Scan     		PDF RFP50N05 RFP50N05 9zcs-43040 AN72G4 AN7260. IN92408 1CB-43MO AN7260

    Untitled

    Abstract: No abstract text available
    Text: Hormis S RFP50N05, RFG50N05 Semiconductor 7 50A, 50V, 0.022 Ohm, N-Channel Power MOSFETs September 1998 Features Description • 50A,50V These are N-Channel power MOSFET’S manufactured using the MegaFET process. This process, which uses fea­ ture sizes approaching those of LSI integrated circuits, gives


    OCR Scan     		PDF RFP50N05, RFG50N05 TB334 AN7254 AN7260

    TA09872

    Abstract: RFP50N05L9A
    Text: interrii RFG50N05L, RFP50N05L D a ta S h e e t 50A, 50V, 0.022 Ohm, Logic Level, N-Channel Power MOSFETs These are logic-level N-channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon,


    OCR Scan     		PDF RFG50N05L, RFP50N05L AN7254 AN7260. TA09872 RFP50N05L9A

    Untitled

    Abstract: No abstract text available
    Text: RFG50N05L, RFP50N05L Semiconductor A p ril 1999 D ata S h eet 50A, 50V, 0.027 Ohm, Logic Level, N-Channel Power MOSFETs These are logic-level N-channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI


    OCR Scan     		PDF RFG50N05L, RFP50N05L AN7254 AN7260.

    p50n05l

    Abstract: 50N05L fp50n05l FP50N
    Text: m RFP50N05L RFG50N05L H a r r is May 1992 N -C h a n n e l Logic Level E n h an ce m e n t-M o d e Pow er F ie ld -E ffe c t Transistors M egaFETs Features Package • UIS S O A Rating C urve {Single Pulse) R FP50N 05L T 0 -2 2 0 A B TOP VIEW • Design O p tim ized for 5V G ate Drive


    OCR Scan     		PDF RFP50N05L RFG50N05L FP50N AN7254 AN-7260. p50n05l 50N05L fp50n05l

    AN7254

    Abstract: RF650N06 RFP50N05 RFP50N06 AN-7254 RFG50N05 mosfat 24v mosfat RFP70N06 34069
    Text: 3 } H a r r is May 1992 R FP 50N 05 R FG 50N 05 N-Channel Enhancement-Mode Power Field-Effect Transistors MegaFETs Features Package TO-220AB TOP VIEW • 50 A , 5 0 V • rDS(on) = 0 .0 2 2 0 DRAIN (FLANGE) • UIS SO A Rating Curve (Single Pulse) u • SO A is P ow er-D issipation Lim ited


    OCR Scan     		PDF RFP50N05 RFG50N05 0-022O 11e-12 91e-3TRS1 26e-3 07e-6 12e-9 AN7254 RF650N06 RFP50N06 AN-7254 mosfat 24v mosfat RFP70N06 34069