MWT-LN600
Abstract: LN600
Text: MwT-LN600 26 GHz Super Low Noise pHEMT Device May 2010 FEATURES APPLICATIONS 0.50 dB Minimum Noise Figure at 12 GHz Excellent Choice for Super Low Noise Applications 8.0 dB Associated Gain at 12 GHz Ideal for Commercial, Military, Hi-Rel Space Applications
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MwT-LN600
LN600
requireme50
12GHz,
MWT-LN600
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SOLAR TRANSISTOR
Abstract: H773
Text: MwT-H7 32 GHz Medium Power/ High Gain AlGaAs/InGaAs PHEMT DOWNLOAD ADDITIONAL DATA WWW.MWTINC.COM All Dimensions in Microns FEATURES 50 50 • 21.5 dBm POWER OUTPUT AT 12 GHz • EXCELLENT FOR HIGH GAIN AND MEDIUM POWER APPLICATIONS • 0.3 MICRON REFRACTORY METAL/GOLD GATE
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Fapp0001
SOLAR TRANSISTOR
H773
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Untitled
Abstract: No abstract text available
Text: Spezifikation für Freigabe / specification for release Kunde / customer : Artikelnummer / part number : Bezeichnung : description : 744306025 SPEICHERDROSSEL WE-HCM POWER-CHOKE WE-HCM RoHS compliant DATUM / DATE : 2009-01-19 A Mechanische Abmessungen / dimensions :
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10x10x5
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Untitled
Abstract: No abstract text available
Text: Spezifikation für Freigabe / specification for release Kunde / customer : Artikelnummer / part number : Bezeichnung : description : 744306030 SPEICHERDROSSEL WE-HCM POWER-CHOKE WE-HCM RoHS compliant DATUM / DATE : 2009-01-19 A Mechanische Abmessungen / dimensions :
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capacitor 0.33uf x2
Abstract: .0068uf "class x2" capacitor 0.15 .1uf M 275 vac MKP
Text: MKP Class X2 EMI/RFI Boxed Metallized polypropylene film capacitors Features • Metallized polypropylene High dvdt Small size Low self inductance Low ESR Across the line Antenna coupling Applications EMI Filter Line by pass
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100VDC
500VDC
100VDC
500VDC
0068uF,
E317135
E317132
SE/0252-3
GB/T14472-1998
capacitor 0.33uf x2
.0068uf
"class x2" capacitor 0.15
.1uf M 275 vac MKP
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SOLAR TRANSISTOR
Abstract: High Power Microwave Device
Text: MwT-H16 32 GHz High Power AlGaAs/InGaAs PHEMT DOWNLOAD ADDITIONAL DATA WWW.MWTINC.COM 50 50 FEATURES 75 241 72 50 35 52 52 35 35 52 35 1067 52 35 52 35 50 • 28 dBm POWER OUTPUT AT 12 GHz • 11 dB GAIN AT 12 GHz • 0.3 MICRON REFRACTORY METAL/GOLD GATE
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MwT-H16
MwT-H16
SOLAR TRANSISTOR
High Power Microwave Device
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MwT-16
Abstract: FPH16
Text: MwT-16 26 GHz High Power GaAs FET DOWNLOAD ADDITIONAL DATA WWW.MWTINC.COM 50 50 FEATURES 75 241 72 50 35 52 52 35 35 52 35 1067 52 35 52 35 50 CHIP THICKNESS = 125 MICRONS All Dimensions in Microns • 0.5 WATT POWER OUTPUT AT 12 GHz • +39 dBm THIRD ORDER INTERCEPT
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MwT-16
MwT-16
FPH16
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Untitled
Abstract: No abstract text available
Text: ISL97651 Data Sheet April 24, 2009 4-Channel Integrated LCD Supply Features The ISL97651 represents a high power, integrated LCD supply IC targeted at large panel LCD displays. The ISL97651 integrates a high power, 4.4A boost converter for AVDD generation, an integrated VON charge pump, a VOFF
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ISL97651
ISL97651
FN7493
AMSEY14
5m-1994.
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FPH15
Abstract: No abstract text available
Text: MwT-H15 38 GHz High Power AlGaAs/InGaAs PHEMT DOWNLOAD ADDITIONAL DATA WWW.MWTINC.COM 50 50 FEATURES 75 • 27 dBm POWER OUTPUT AT 12 GHz • 11 dB GAIN AT 12 GHz • 0.3 MICRON REFRACTORY METAL/GOLD GATE • 630 MICRON GATE WIDTH 241 72 52 35 50 35 52 775
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MwT-H15
MwT-H15
FPH15
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Untitled
Abstract: No abstract text available
Text: MKP Boxed Metallized Polypropylene Film Capacitors Class X2 EMI/RFI Features Applications Metallized polypropylene – Low self inductance – Small size – High dvdt – Low ESR EMI Filter – Line by-pass – Across the line – Antenna coupling Operating Temperature Range
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100VDC
500VDC
154MKP275KE
18x10
565MKP275KJ
224MKP275KB
18x11
565MKP275KH
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Untitled
Abstract: No abstract text available
Text: FEATURES Small size – Safety Agency approved – Metalized Polypropylene APPLICATIONS EMI filters – Line bypass – Across the line – Antenna coupling Operating Temperature Range Capacitance Tolerance AC voltage 50/60 Hz -40°C to +110°C +10% at 1 kHz, 20°C
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100VDC
154MKP275K
26x14
475MKP275KJ
5x30x17
154MKP275KE
18x10
565MKP275KJ
224MKP275KB
18x11
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Untitled
Abstract: No abstract text available
Text: Small size – Safety Agency approved – Metalized Polypropylene FEATURES APPLICATIONS EMI filters – Line bypass – Across the line – Antenna coupling Operating Temperature Range Capacitance Tolerance AC voltage 50/60 Hz -40°C to +110°C +10% at 1 kHz, 20°C
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100VDC
154MKP275K
26x14
475MKP275KJ
5x30x17
154MKP275KE
18x10
565MKP275KJ
224MKP275KB
18x11
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ISL97651
Abstract: ISL97651ARTZ ISL97651ARTZ-T ISL97651ARTZ-TK Cooper Bussmann GS -L 0.1uF Capacitor
Text: ISL97651 Data Sheet August 14, 2006 4-Channel Integrated LCD Supply Features The ISL97651 represents a high power, integrated LCD supply IC targeted at large panel LCD displays. The ISL97651 integrates a high power, 4.4A boost converter for AVDD generation, an integrated VON charge pump, a VOFF
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ISL97651
ISL97651
FN7493
ISL97651ARTZ
ISL97651ARTZ-T
ISL97651ARTZ-TK
Cooper Bussmann
GS -L 0.1uF Capacitor
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Untitled
Abstract: No abstract text available
Text: MwT-15 26 GHz Power GaAs FET DOWNLOAD ADDITIONAL DATA WWW.MWTINC.COM 50 50 FEATURES 75 • +24 dBm POWER OUTPUT AT 12 GHz • 9.5 dB SMALL SIGNAL GAIN AT 12 GHz • 0.3 MICRON REFRACTORY METAL/GOLD GATE • 630 MICRON GATE WIDTH 241 72 35 52 35 50 52 775 35
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MwT-15
MwT-15
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capacitor 0.22 uF MKP X2
Abstract: "class x2" capacitor 0.15 iec 60384-14 393m Capacitor 0.027 capacitor MKP X2 IEC 60384-14 1414 MKP x2 105MKP275KG 0.0068UF 104MKP275K
Text: Class X2 Radial Lead Metallized Polypropylene Capacitors MKP • EMI filter • Antenna coupling • Across the line • Line bypass Operating Temperature Range -40°C to +110°C Capacitance Tolerance ±10% at 1kHz, 25°C Voltage Range 50-60Hz 310 UL, CSA
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50-60Hz
100VDC
500VDC
1000Vrms
E-317132
8-M1986
capacitor 0.22 uF MKP X2
"class x2" capacitor 0.15
iec 60384-14
393m
Capacitor 0.027
capacitor MKP X2
IEC 60384-14 1414 MKP x2
105MKP275KG
0.0068UF
104MKP275K
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MwT-LN240
Abstract: super low noise
Text: MwT-LN240 26 GHz Super Low Noise pHEMT Device May 2010 FEATURES APPLICATIONS 0.5 dB Minimum Noise Figure at 12 GHz Excellent Choice for Super Low Noise Applications 10 dB Associated Gain at 12 GHz Ideal for Commercial, Military, Hi-Rel Space Applications 16 dBm P1dB at 12 GHz
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MwT-LN240
LN240
12GHz,
MwT-LN240
super low noise
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h770
Abstract: H773
Text: MwT-H7 28 GHz Medium Power/ High Gain AlGaAs/InGaAs PHEMT DOWNLOAD ADDITIONAL DATA WWW.MWTINC.COM All Dimensions in Microns FEATURES 50 50 • 21.5 dBm POWER OUTPUT AT 12 GHz • EXCELLENT FOR HIGH GAIN AND MEDIUM POWER APPLICATIONS • 0.3 MICRON REFRACTORY METAL/GOLD GATE
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Fapp0001
h770
H773
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Untitled
Abstract: No abstract text available
Text: Small size – Safety Agency approved – Metalized Polypropylene FEATURES APPLICATIONS EMI filters – Line bypass – Across the line – Antenna coupling Operating Temperature Range Capacitance Tolerance AC voltage 50/60 Hz -40°C to +110°C +10% at 1 kHz, 20°C
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100VDC
154MKP275K
26x14
475MKP275KJ
5x30x17
154MKP275KE
18x10
565MKP275KJ
224MKP275KB
18x11
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SOLAR TRANSISTOR
Abstract: MwT-H15
Text: MwT-H15 38 GHz High Power AlGaAs/InGaAs PHEMT DOWNLOAD ADDITIONAL DATA WWW.MWTINC.COM 50 50 FEATURES 75 • 27 dBm POWER OUTPUT AT 12 GHz • 11 dB GAIN AT 12 GHz • 0.3 MICRON REFRACTORY METAL/GOLD GATE • 630 MICRON GATE WIDTH 241 72 52 35 50 35 52 775
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MwT-H15
MwT-H15
effec300
SOLAR TRANSISTOR
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pdcr 910
Abstract: PDCR 910 series PDCR 900 series PDCR 900 "drum core" AL pdcr 340
Text: Introduction Purpose Introduction the WE-PDF Flatwire Inductor series Objectives Overview the available products Explain the key features and technical background of Flatwire Technology explanation flatwire advantages typical applications Content
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7443556xxx
7443557xxx
13x13
18x18
pdcr 910
PDCR 910 series
PDCR 900 series
PDCR 900
"drum core" AL
pdcr 340
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Untitled
Abstract: No abstract text available
Text: MwT-16 M ic r o w ave 26 GHz High Power G aAs FET Technology rr • • • • 0.5 W ATT P O W ER OUTPUT AT 12 GHz +39 dBm THIRD O R D E R IN TERCEPT HIGH A S S O C IA T E D G AIN 0.3 M IC R O N R E F R A C T O R Y M ETAL/GO LD G ATE • 900 M IC RO N G A T E WIDTH
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MwT-16
MwT-16
e-177
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Untitled
Abstract: No abstract text available
Text: MwT-A7 26 GHz High Gain, Low Noise GaAs FET M ic r o w a v e T e c h n o l o g y n • • • • • HIGH AVAILABLE GAIN WHEN BIASED FOR LOW-NOISE EXCELLENT FOR BROADBAND GAIN OR OSCILLATOR BUFFER APPLICATIONS 0.3 MICRON REFRACTORY METAUGOLD GATE 250 MICRON GATE WIDTH
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Untitled
Abstract: No abstract text available
Text: MwT-A3 I E S I 26 GHz High Gain, Low Noise GaAs FET M ic r o w a v e T e c h n o l o g y so |4 1.8 dB NOISE FIGURE A T 12 GHZ +20 DBM OUTPUT POWER A T 12 GHZ 11 DB SMALL SIGNAL GAIN A T 12 GHZ 0.3 MICRON REFRACTORY METAL/GOLD GATE 300 MICRON GATE WIDTH CHOICE OF CHIP AND THREE
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MICRON POWER RESISTOR MLS
Abstract: chip die hp transistor
Text: MwT-A11 14 GHz High Power GaAs FET MICROWAVE TECHNOLOGY J*- 7S +| • • • rn inmmin 101ini r F Ì - 86 -J 1/1 ''I t- 75 J £ Ì - 186 - * N- + 68 mmt m i 343 - 1 • • • 1 WATT POWER OUTPUT AT 12 GHz HIGH ASSOCIATED GAIN
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MwT-A11
MwT-A11
MICRON POWER RESISTOR MLS
chip die hp transistor
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