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    110N055 Search Results

    110N055 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    NP110N055PUG-E1-AY Renesas Electronics Corporation Power MOSFETs for Automotive Visit Renesas Electronics Corporation
    NP110N055PUG-E2-AY Renesas Electronics Corporation Power MOSFETs for Automotive Visit Renesas Electronics Corporation
    NP110N055PUJ-E1B-AY Renesas Electronics Corporation Power MOSFETs for Automotive Visit Renesas Electronics Corporation
    NP110N055PUG-E1-AZ Renesas Electronics Corporation Power MOSFETs for Automotive Visit Renesas Electronics Corporation
    NP110N055PUJ-E2B-AY Renesas Electronics Corporation Power MOSFETs for Automotive Visit Renesas Electronics Corporation
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    110N055 Price and Stock

    Renesas Electronics Corporation NP110N055PUK-E1-AY

    MOSFET N-CH 55V 110A TO263
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey NP110N055PUK-E1-AY Cut Tape 799 1
    • 1 $5.54
    • 10 $3.698
    • 100 $5.54
    • 1000 $5.54
    • 10000 $5.54
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    NP110N055PUK-E1-AY Digi-Reel 799 1
    • 1 $5.54
    • 10 $3.698
    • 100 $5.54
    • 1000 $5.54
    • 10000 $5.54
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    NP110N055PUK-E1-AY Reel 800
    • 1 -
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    • 1000 $2.1025
    • 10000 $2.1025
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    Avnet Americas NP110N055PUK-E1-AY Reel 18 Weeks 800
    • 1 $2.244
    • 10 $2.244
    • 100 $2.244
    • 1000 $2.244
    • 10000 $2.244
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    Mouser Electronics NP110N055PUK-E1-AY 780
    • 1 $4.98
    • 10 $3.73
    • 100 $2.67
    • 1000 $2.1
    • 10000 $2.1
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    Renesas Electronics America NP110N055PUK-E1-AY Tape & Reel (TR) 799 1
    • 1 $5.54
    • 10 $3.698
    • 100 $2.6517
    • 1000 $2.1025
    • 10000 $2.1025
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    Littelfuse Inc IXTP110N055T2

    MOSFET N-CH 55V 110A TO220AB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXTP110N055T2 Tube 300 1
    • 1 $3.1
    • 10 $3.1
    • 100 $3.1
    • 1000 $1.22838
    • 10000 $1.22838
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    Newark IXTP110N055T2 Bulk 300
    • 1 -
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    • 100 $1.92
    • 1000 $1.51
    • 10000 $1.35
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    IXYS Corporation IXTQ110N055P

    MOSFET N-CH 55V 110A TO3P
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXTQ110N055P Tube 30
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    • 100 $2.332
    • 1000 $2.332
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    Bristol Electronics IXTQ110N055P 30
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    IXYS Corporation IXTP110N055P

    MOSFET N-CH 55V 110A TO220AB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXTP110N055P Tube 50
    • 1 -
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    • 100 $1.9904
    • 1000 $1.9904
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    IXYS Corporation IXTP110N055T

    MOSFET N-CH 55V 110A TO220AB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXTP110N055T Tube 50
    • 1 -
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    • 100 $1.2654
    • 1000 $1.2654
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    Find more 110N055 price and stock on Findchips.com

    110N055 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    110N055

    Abstract: 123B16
    Text: Advanced Technical Information PolarHTTM Power MOSFET IXTQ 110N055P IXTA 110N055P IXTP 110N055P VDSS ID25 = 55 V = 110 A Ω = 13.5 mΩ RDS on N-Channel Enhancement Mode TO-3P (IXTQ) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ


    Original     		110N055P O-220 065B1 728B1 123B1 728B1 110N055P 110N055 123B16 PDF

    607V

    Abstract: No abstract text available
    Text: PolarHTTM Power MOSFET IXTQ 110N055P IXTA 110N055P IXTP 110N055P VDSS ID25 = 55 V = 110 A Ω = 13.5 mΩ RDS on N-Channel Enhancement Mode TO-3P (IXTQ) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ


    Original     		110N055P O-220 O-263 110N055P 607V PDF

    110N055P

    Abstract: No abstract text available
    Text: PolarHTTM Power MOSFET IXTQ 110N055P IXTA 110N055P IXTP 110N055P VDSS ID25 = 55 V = 110 A Ω = 13.5 mΩ RDS on N-Channel Enhancement Mode TO-3P (IXTQ) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ


    Original     		110N055P 110N055P O-220 O-263 PDF

    110N055

    Abstract: 110N055P IXTQ110N055P
    Text: PolarHTTM Power MOSFET IXTA 110N055P IXTP 110N055P IXTQ 110N055P = 55 V = 110 A ≤ 13.5 mΩ Ω VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ


    Original     		110N055P O-263 110N055P 110N055 IXTQ110N055P PDF

    Untitled

    Abstract: No abstract text available
    Text: PolarHTTM Power MOSFET IXTA 110N055P IXTP 110N055P IXTQ 110N055P = 55 V = 110 A ≤ 13.5 mΩ Ω VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ


    Original     		110N055P O-263 17Fig. 110N055P PDF

    DIODE 1334

    Abstract: 1334 diode 96N20 36N30P equivalent 88N30 100N25P 36N30 IXTP75N10P IXTP IXTP IXTP IXTP 200N10P-88
    Text: Chip-Shortform2004.pmd PolarHTTM MOSFET, very low RDS on Type VDSS max. RDSon max. Chip type Chip size dimensions 11 Source bond wire recommended Equivalent device data sheet 26.10.2004, 12:44 V mΩ mm mils IXTD 110N055P-5S 55 21 5S 6.20 x 5.20 244 x 205


    Original     		110N055P-5S 75N10P-5S 110N10P-6S 140N10P-7S 170N10P-8S 200N10P-88 62N15P-5S 96N15P-6S 120N15P-7S 150N15P-8S DIODE 1334 1334 diode 96N20 36N30P equivalent 88N30 100N25P 36N30 IXTP75N10P IXTP IXTP IXTP IXTP PDF

    NEC 110N055

    Abstract: 110N055 110n055 NEC NP110N055PUJ-E1B-AY NP110N055PUJ-E2B-AY MP-25ZP
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF

    180N055T

    Abstract: No abstract text available
    Text: Advance Technical Information IXTQ 180N055T IXTA 180N055T IXTP 180N055T Trench Gate Power MOSFET VDSS ID25 = 55 V = 180 A Ω = 4.0 mΩ RDS on N-Channel Enhancement Mode TO-3P (IXTQ) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ


    Original     		180N055T O-220 180N055T PDF

    IXTD08N100P-1A

    Abstract: IXTQ22N60P IXFH20N80P DWS20-200A IXFH24N80P IXFK180N15P IXTQ22N50P DWHP16-12 IXGH64N60A3 IXFB50N80Q2
    Text: www.ixys.com Contents Page Symbols and Definitions Nomenclature General Informations for Chips Assembly Instructions FRED, Rectifier Diode and Thyristor Chips in Planar Design 2 2 3 4 5 IGBT Chips VCES G-Series, Low VCE sat B2 Types G-Series, Fast C2 Types


    Original     		PDF

    NEC 110N055

    Abstract: 110n055 110n055 NEC nec d 1590 NP110N055PUJ-E1B-AY NP110N055PUJ-E2B-AY NP110N055PUJ MARKING E2B MP-25ZP date code marking NEC
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 110N055PUJ SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 110N055PUJ is N-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER 110N055PUJ-E1B-AY


    Original     		NP110N055PUJ NP110N055PUJ NP110N055PUJ-E1B-AY NP110N055PUJ-E2B-AY O-263 MP-25ZP) AEC-Q101 O-263) NEC 110N055 110n055 110n055 NEC nec d 1590 NP110N055PUJ-E1B-AY NP110N055PUJ-E2B-AY MARKING E2B MP-25ZP date code marking NEC PDF

    7N60B equivalent

    Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
    Text: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches


    Original     		MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2 PDF

    STW20N60

    Abstract: 2n60p IXFB100N50 IXFB100N50P STW20N60FD IXFB100N50P TO-264 ixys ixfn100n50p IXFN48n60p IXFH30N60P ixfn100n50p
    Text: PolarHTTM 55V to 300V Standard Power MOSFETs Benefits of Polar HTTM and Polar HVTM This new “Polar” technology platform utilizes a patented proprietary cell design, as well as numerous process improvements that reduce RDS(on) by over 30% per unit area, while also reducing Qg by an equal


    Original     		O-220, ISOPLUS220TM, O-247, ISOPLUS247TM, O-264, ISOPLUS264TM. PLUS220 ISOPLUS220TM PLUS220SMD O-252 STW20N60 2n60p IXFB100N50 IXFB100N50P STW20N60FD IXFB100N50P TO-264 ixys ixfn100n50p IXFN48n60p IXFH30N60P ixfn100n50p PDF