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    110N055P Search Results

    110N055P Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    NP110N055PUG-E1-AY Renesas Electronics Corporation Power MOSFETs for Automotive Visit Renesas Electronics Corporation
    NP110N055PUG-E2-AY Renesas Electronics Corporation Power MOSFETs for Automotive Visit Renesas Electronics Corporation
    NP110N055PUJ-E1B-AY Renesas Electronics Corporation Power MOSFETs for Automotive Visit Renesas Electronics Corporation
    NP110N055PUG-E1-AZ Renesas Electronics Corporation Power MOSFETs for Automotive Visit Renesas Electronics Corporation
    NP110N055PUJ-E2B-AY Renesas Electronics Corporation Power MOSFETs for Automotive Visit Renesas Electronics Corporation
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    110N055P Price and Stock

    Renesas Electronics Corporation NP110N055PUK-E1-AY

    MOSFET N-CH 55V 110A TO263
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    DigiKey NP110N055PUK-E1-AY Cut Tape 799 1
    • 1 $5.54
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    NP110N055PUK-E1-AY Digi-Reel 799 1
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    NP110N055PUK-E1-AY Reel 800
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    Avnet Americas NP110N055PUK-E1-AY Reel 18 Weeks 800
    • 1 $2.244
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    Mouser Electronics NP110N055PUK-E1-AY 780
    • 1 $4.98
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    Renesas Electronics America NP110N055PUK-E1-AY Tape & Reel (TR) 799 1
    • 1 $5.54
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    • 100 $2.6517
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    IXYS Corporation IXTQ110N055P

    MOSFET N-CH 55V 110A TO3P
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    DigiKey IXTQ110N055P Tube 30
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    Bristol Electronics IXTQ110N055P 30
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    IXYS Corporation IXTP110N055P

    MOSFET N-CH 55V 110A TO220AB
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    DigiKey IXTP110N055P Tube 50
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    IXYS Corporation IXTA110N055P

    MOSFET N-CH 55V 110A TO263
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    DigiKey IXTA110N055P Tube 50
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    Renesas Electronics Corporation NP110N055PUG-E1-AY

    MOSFET N-CH 55V 110A TO263
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    DigiKey NP110N055PUG-E1-AY Reel
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    110N055P Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    110N055

    Abstract: 123B16
    Text: Advanced Technical Information PolarHTTM Power MOSFET IXTQ 110N055P IXTA 110N055P IXTP 110N055P VDSS ID25 = 55 V = 110 A Ω = 13.5 mΩ RDS on N-Channel Enhancement Mode TO-3P (IXTQ) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ


    Original     		110N055P O-220 065B1 728B1 123B1 728B1 110N055P 110N055 123B16 PDF

    607V

    Abstract: No abstract text available
    Text: PolarHTTM Power MOSFET IXTQ 110N055P IXTA 110N055P IXTP 110N055P VDSS ID25 = 55 V = 110 A Ω = 13.5 mΩ RDS on N-Channel Enhancement Mode TO-3P (IXTQ) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ


    Original     		110N055P O-220 O-263 110N055P 607V PDF

    110N055P

    Abstract: No abstract text available
    Text: PolarHTTM Power MOSFET IXTQ 110N055P IXTA 110N055P IXTP 110N055P VDSS ID25 = 55 V = 110 A Ω = 13.5 mΩ RDS on N-Channel Enhancement Mode TO-3P (IXTQ) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ


    Original     		110N055P 110N055P O-220 O-263 PDF

    110N055

    Abstract: 110N055P IXTQ110N055P
    Text: PolarHTTM Power MOSFET IXTA 110N055P IXTP 110N055P IXTQ 110N055P = 55 V = 110 A ≤ 13.5 mΩ Ω VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ


    Original     		110N055P O-263 110N055P 110N055 IXTQ110N055P PDF

    Untitled

    Abstract: No abstract text available
    Text: PolarHTTM Power MOSFET IXTA 110N055P IXTP 110N055P IXTQ 110N055P = 55 V = 110 A ≤ 13.5 mΩ Ω VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ


    Original     		110N055P O-263 17Fig. 110N055P PDF

    DIODE 1334

    Abstract: 1334 diode 96N20 36N30P equivalent 88N30 100N25P 36N30 IXTP75N10P IXTP IXTP IXTP IXTP 200N10P-88
    Text: Chip-Shortform2004.pmd PolarHTTM MOSFET, very low RDS on Type VDSS max. RDSon max. Chip type Chip size dimensions 11 Source bond wire recommended Equivalent device data sheet 26.10.2004, 12:44 V mΩ mm mils IXTD 110N055P-5S 55 21 5S 6.20 x 5.20 244 x 205


    Original     		110N055P-5S 75N10P-5S 110N10P-6S 140N10P-7S 170N10P-8S 200N10P-88 62N15P-5S 96N15P-6S 120N15P-7S 150N15P-8S DIODE 1334 1334 diode 96N20 36N30P equivalent 88N30 100N25P 36N30 IXTP75N10P IXTP IXTP IXTP IXTP PDF

    IXTD08N100P-1A

    Abstract: IXTQ22N60P IXFH20N80P DWS20-200A IXFH24N80P IXFK180N15P IXTQ22N50P DWHP16-12 IXGH64N60A3 IXFB50N80Q2
    Text: www.ixys.com Contents Page Symbols and Definitions Nomenclature General Informations for Chips Assembly Instructions FRED, Rectifier Diode and Thyristor Chips in Planar Design 2 2 3 4 5 IGBT Chips VCES G-Series, Low VCE sat B2 Types G-Series, Fast C2 Types


    Original     		PDF

    7N60B equivalent

    Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
    Text: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches


    Original     		MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2 PDF

    STW20N60

    Abstract: 2n60p IXFB100N50 IXFB100N50P STW20N60FD IXFB100N50P TO-264 ixys ixfn100n50p IXFN48n60p IXFH30N60P ixfn100n50p
    Text: PolarHTTM 55V to 300V Standard Power MOSFETs Benefits of Polar HTTM and Polar HVTM This new “Polar” technology platform utilizes a patented proprietary cell design, as well as numerous process improvements that reduce RDS(on) by over 30% per unit area, while also reducing Qg by an equal


    Original     		O-220, ISOPLUS220TM, O-247, ISOPLUS247TM, O-264, ISOPLUS264TM. PLUS220 ISOPLUS220TM PLUS220SMD O-252 STW20N60 2n60p IXFB100N50 IXFB100N50P STW20N60FD IXFB100N50P TO-264 ixys ixfn100n50p IXFN48n60p IXFH30N60P ixfn100n50p PDF