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    L2083

    Abstract: No abstract text available
    Text: polyfet rf devices L2083 PATENTED GOLD METALIZED General Description SILICON RF POWER MOSFET Silicon DMOS designed specifically for RF applications. Immune to forward and reverse bias secondary breakdown "Polyfet"1"1 process features gold metal for greatly extended


    OCR Scan     		PDF L2083 724100e] 0000EÃ L2083

    Untitled

    Abstract: No abstract text available
    Text: polyfet rf devices F2047 PATENTED GOLD METALIZED General Description SILICON RF POWER MOSFET Silicon DMOS designed specifically for RF applications. Immune to forward and reverse bias secondary breakdown "Polyfet"1111 process features gold metal for greatly extended


    OCR Scan     		PDF F2047 72410m 1110AvenidaAcaso, 72mDD1

    Untitled

    Abstract: No abstract text available
    Text: polyfet rf devices F1076 PATENTED GOLD METALIZED General Description SILICON RF POWER MOSFET Silicon DMOS designed specifically for RF applications. Immune to forward and reverse bias secondary breakdown "Polyfet"1"1 process features gold metal for greatly extended


    OCR Scan     		PDF F1076 J060- 1110AvenidaAcaso, 7241DDT

    Untitled

    Abstract: No abstract text available
    Text: polyfet if devices F1069 PATENTED GOLD METALIZED General Description Silicon D M O S designed specifically for R F applications. Immune to forward and reverse bias secondary breakdown "Polyfet"1”1 process features gold metal for greatly extended lifetime. Low output capacitance


    OCR Scan     		PDF F1069

    Untitled

    Abstract: No abstract text available
    Text: polyfet rf devices F1070 PATENTED GOLD METALIZED General Description SILICON RF POWER MOSFET Silicon DMOS designed specifically for RF applications. Immune to forward and reverse bias secondary breakdown "Polyfet"1”1 process features gold metal for greatly extended


    OCR Scan     		PDF F1070 1110AvenidaAcaso, 7241QCH

    Untitled

    Abstract: No abstract text available
    Text: polyfet rf devices F1208 PATENTED GOLD METALIZED General Description Silicon DMOS designed specifically for RF applications. Immune to forward and reverse bias secondary breakdown "Polyfet"1”1 process features gold metal for greatly extended lifetime. Low output capacitance


    OCR Scan     		PDF F1208 1110Avenida

    Untitled

    Abstract: No abstract text available
    Text: polyfet rf devices F1107 PATENTED GOLD METALIZED General Description Silicon DMOS designed specifically for RF applications. Immune to forward and reverse bias secondary breakdown "Polyfet"ta process features gold metal for greatly extended lifetime. Low output capacitance


    OCR Scan     		PDF F1107 1110AvenidaAcaso,

    Untitled

    Abstract: No abstract text available
    Text: polyfet rf devices F2001 PATENTED GOLD METALIZED General Description Silicon DMOS designed specifically for RF applications. Immune to forward and reverse bias secondary breakdown "Polyfet"tm process features gold metal for greatly extended lifetime. Low output capacitance


    OCR Scan     		PDF F2001 \G813V 1110AvenidaAcaso,

    Untitled

    Abstract: No abstract text available
    Text: polyfet rf devices F2211 PATENTED GOLD METALIZED General Description SILICON RF POWER MOSFET Silicon DMOS designed specifically for RF applications. Immune to forward and reverse bias secondary breakdown "Polyfet"1"1 process features gold metal for greatly extended


    OCR Scan     		PDF F2211 1110AvenidaAcaso, 724100e

    Untitled

    Abstract: No abstract text available
    Text: polyfet rf devices F2246 PATENTED GOLD METALIZED General Description SILICON RF POWER MOSFET Silicon DMOS designed specifically for RF applications. Immune to forward and reverse bias secondary breakdown "Polyfet"1” 1 process features gold metal for greatly extended


    OCR Scan     		PDF F2246 1110AvenidaAcaso, 7241DQÂ

    Untitled

    Abstract: No abstract text available
    Text: polyfet rf devices F1520 PATENTED GOLD METALIZED General Description Silicon DMOS designed specifically for RF applications. Immune to forward and reverse bias secondary breakdown "Polyfet"1"1 process features gold metal for greatly extended lifetime. Low output capacitance


    OCR Scan     		PDF F1520 \Q612V 1110AvenidaAcaso, 724100e

    Untitled

    Abstract: No abstract text available
    Text: polyfet rf devices F1516 PATENTED GOLD METALIZED General Description Silicon DMOS designed specifically for RF applications. Immune to forward and reverse bias secondary breakdown "Polyfet" ^ process features gold metal for greatly extended lifetime. Low output capacitance


    OCR Scan     		PDF F1516 \GS12V 1110AvenidaAcaso, 805J-484-3393 00QD21S

    Untitled

    Abstract: No abstract text available
    Text: polyfet rf devices F1210 PATENTED GOLD METALIZED General Description SILICON RF POWER MOSFET Silicon DMOS designed specifically for RF applications. Immune to forward and reverse bias secondary breakdown "Polyfet"1”1 process features gold metal for greatly extended


    OCR Scan     		PDF F1210 1110AvenidaAcaso,

    Untitled

    Abstract: No abstract text available
    Text: polyfet rf devices F9012 PATENTED GOLD METALIZED General Description Silicon DMOS designed specifically for RF applications. Immune to forward and reverse bias secondary breakdown "Polyfet',tm process features gold metal for greatly extended lifetime. Low output capacitance


    OCR Scan     		PDF F9012 VGS12V 1110AvenidaAcaso, 72mOCH D0D0273

    Untitled

    Abstract: No abstract text available
    Text: polyfet rf devices P125 PATENTED GOLD METALIZED General Description SILICON RF POWER MOSFET Silicon DMOS designed specifically for RF applications. Immune to forward and reverse bias secondary breakdown "Polyfet"*"1 process features gold metal for greatly extended


    OCR Scan     		PDF 1110Avenida

    Untitled

    Abstract: No abstract text available
    Text: polyfet rf devices F2201S PATENTED GOLD METALIZED General Description SILICON RF POWER MOSFET Silicon DMOS designed specifically for RF applications. Immune to forward and reverse bias secondary breakdown "Polyfet"ta process features gold metal for greatly extended


    OCR Scan     		PDF F2201S

    Untitled

    Abstract: No abstract text available
    Text: polyfet rf devices F2202S PATENTED GOLD METALIZED General Description SILICON RF POWER MOSFET Silicon DMOS designed specifically for RF applications. Immune to forward and reverse bias secondary breakdown "Polyfet"1”1 process features gold metal for greatly extended


    OCR Scan     		PDF F2202S 1110AvenidaAcaso,

    Untitled

    Abstract: No abstract text available
    Text: polyfet rf devices F2002S PATENTED GOLD METALIZED General Description SILICON RF POWER MOSFET Silicon D M O S designed specifically for RF applications. Immune to forward and reverse bias secondary breakdown "Polyfet',tm process features gold metal for greatly extended


    OCR Scan     		PDF F2002S 1110Avenida

    Untitled

    Abstract: No abstract text available
    Text: polyfet rf devices F1077 PATENTED GOLD METALIZED General Description SILICON RF POWER MOSFET Silicon DMOS designed specifically for RF applications. Immune to forward and reverse bias secondary breakdown "Polyfet"tm process features gold metal for greatly extended


    OCR Scan     		PDF F1077 1110AvenidaAcaso, 7241am

    Untitled

    Abstract: No abstract text available
    Text: polyfet rf devices F1535 PATENTED GOLD METALIZED General Description Silicon DMOS designed specifically for RF applications. Immune to forward and reverse bias secondary breakdown "Polyfet"11,1 process features gold metal for greatly extended lifetime. Low output capacitance


    OCR Scan     		PDF F1535 1110AvenidaAcaso,

    Untitled

    Abstract: No abstract text available
    Text: polyfet rf devices F1222 PATENTED GOLD METALIZED General Description SILICON RF POWER MOSFET ¿P PACKAGE Silicon D M O S designed specifically for R F applications. Immune to forward and reverse bias secondary breakdown "Polyfet"process features gold metal for greatly extended


    OCR Scan     		PDF F1222 1110AvenidaAcaso,

    Untitled

    Abstract: No abstract text available
    Text: polyfet rf devices F1207 PATENTED GOLD METALIZED General Description SILICON RF POWER MOSFET Silicon DMOS designed specifically for RF applications. Immune to forward and reverse bias secondary breakdown "Polyfet"1”1 process features gold metal for greatly extended


    OCR Scan     		PDF F1207 060QfeOâ

    Untitled

    Abstract: No abstract text available
    Text: polyfet rf devices F1001C PATENTED GOLD METALIZED General Description SILICON RF POWER MOSFET Silicon DMOS designed specifically for RF applications. Immune to forward and reverse bias secondary breakdown "Polyfet"1111 process features gold metal for greatly extended


    OCR Scan     		PDF F1001C 1110AvenidaAcaso,

    Untitled

    Abstract: No abstract text available
    Text: polyfet rf devices F1006 PATENTED GOLD METALIZED General Description SILICON RF POWER MOSFET Silicon DMOS designed specifically for RF applications. Immune to forward and reverse bias secondary breakdown "Polyfet" *"* process features gold metal for greatly extended


    OCR Scan     		PDF F1006 1110Avenida