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    D040

    Abstract: dd 127 dd 127 d TC59S6408FT
    Text: TOSHIBA THMY7280D1EG-80H TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT TENTATIVE 8,388,608-WORD BY 72-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY7280D1EG is a 8,388,608-word by 72-bit synchronous dynamic RAM module consisting of nine TC59S6408FT DRAMs and an unbuffer on a printed circuit board.


    OCR Scan     		PDF THMY7280D1EG-80H THMY7280D1EG 608-word 72-bit TC59S6408FT 72-bit 409fr D040 dd 127 dd 127 d

    22 J capacitor

    Abstract: No abstract text available
    Text: @ LG Semicon. Co. LTD. Description Features The GMM7328100AS/SG is a 8M x 32 bits Dynamic RAM MODULE which is assembled 16 pieces of 4M x 4bit DRAMs in 24 pin SOJ package on both sides the printed circuit board with decoupling capacitors. The GMM7328100AS/SG is optimized for


    OCR Scan     		PDF GMM7328100AS/SG GMM7328100AS/SG GMM7328100AS GMM7328100ASG 111111111il 1111111111il 22 J capacitor

    transistor 8331

    Abstract: AD583BD AD588BD AD588TQ rtd with wheatstone bridge K4515 AD588 AD588AQ AD588JQ AD588SE
    Text: ANALOG ► DEVICES High Precision Voltage Reference FUNCTIONAL BLOCK DIAGRAM FEATURES Low Drift: 1.5 ppm/°C Low Initial Error: 1 mV Pin-Program m able Output +10 V, +5 V, ± 5 V Tracking, - 5 V, -1 0 V Flexible Output Force and Sense Terminals High Impedance Ground Sense


    OCR Scan     		PDF MIL-STD-883 AD588 transistor 8331 AD583BD AD588BD AD588TQ rtd with wheatstone bridge K4515 AD588AQ AD588JQ AD588SE