Untitled
Abstract: No abstract text available
Text: NICHIA STS-DA1-1819B <Cat.No.111207> NICHIA CORPORATION SPECIFICATIONS FOR RED LED NCSR119T Pb-free Reflow Soldering Application RoHS Compliant NICHIA STS-DA1-1819B <Cat.No.111207> SPECIFICATIONS 1 Absolute Maximum Ratings Symbol Absolute Maximum Rating
|
Original
|
PDF
|
STS-DA1-1819B
NCSR119T
|
MIFARE DESFire
Abstract: No abstract text available
Text: BUK9K29-100E Dual N-channel TrenchMOS logic level FET 28 August 2012 Product data sheet 1. Product profile 1.1 General description Dual logic level N-channel MOSFET in a LFPAK56D package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use
|
Original
|
PDF
|
BUK9K29-100E
LFPAK56D
MIFARE DESFire
|
LFPAK56
Abstract: No abstract text available
Text: BUK7K5R1-30E Dual N-channel TrenchMOS standard level FET 23 July 2012 Product data sheet 1. Product profile 1.1 General description Dual standard level N-channel MOSFET in a LFPAK56D package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use
|
Original
|
PDF
|
BUK7K5R1-30E
LFPAK56D
LFPAK56
|
Untitled
Abstract: No abstract text available
Text: BUK9K45-100E Dual N-channel TrenchMOS logic level FET 23 July 2012 Product data sheet 1. Product profile 1.1 General description Dual logic level N-channel MOSFET in a LFPAK56D package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use
|
Original
|
PDF
|
BUK9K45-100E
LFPAK56D
|
Untitled
Abstract: No abstract text available
Text: BUK9K6R2-40E Dual N-channel TrenchMOS logic level FET 19 July 2012 Product data sheet 1. Product profile 1.1 General description Dual logic level N-channel MOSFET in a LFPAK56D package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use
|
Original
|
PDF
|
BUK9K6R2-40E
LFPAK56D
|
Untitled
Abstract: No abstract text available
Text: BUK9K89-100E Dual N-channel TrenchMOS logic level FET 23 July 2012 Product data sheet 1. Product profile 1.1 General description Dual logic level N-channel MOSFET in a LFPAK56D package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use
|
Original
|
PDF
|
BUK9K89-100E
LFPAK56D
|
LFPAK56D
Abstract: No abstract text available
Text: BUK7K25-40E Dual N-channel TrenchMOS standard level FET 5 September 2012 Product data sheet 1. Product profile 1.1 General description Dual standard level N-channel MOSFET in a LFPAK56D package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use
|
Original
|
PDF
|
BUK7K25-40E
LFPAK56D
|
Untitled
Abstract: No abstract text available
Text: BUK9K29-100E Dual N-channel TrenchMOS logic level FET 28 August 2012 Product data sheet 1. Product profile 1.1 General description Dual logic level N-channel MOSFET in a LFPAK56D package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use
|
Original
|
PDF
|
BUK9K29-100E
LFPAK56D
|
LFPAK56D
Abstract: No abstract text available
Text: BUK7K5R6-30E Dual N-channel TrenchMOS standard level FET 23 July 2012 Product data sheet 1. Product profile 1.1 General description Dual standard level N-channel MOSFET in a LFPAK56D package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use
|
Original
|
PDF
|
BUK7K5R6-30E
LFPAK56D
|
aichi
Abstract: No abstract text available
Text: AMI603 Specifications Aichi Steel Corporation Contents [ 1 ] Scope of Application . 2 [ 2 ] General Description. 2
|
Original
|
PDF
|
AMI603
168Hr
200Hr
AMI603.
111207C
aichi
|
Untitled
Abstract: No abstract text available
Text: BUK7K6R8-40E Dual N-channel TrenchMOS standard level FET 23 July 2012 Product data sheet 1. Product profile 1.1 General description Dual standard level N-channel MOSFET in a LFPAK56D package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use
|
Original
|
PDF
|
BUK7K6R8-40E
LFPAK56D
|
Untitled
Abstract: No abstract text available
Text: BUK9K18-40E Dual N-channel TrenchMOS logic level FET 23 July 2012 Product data sheet 1. Product profile 1.1 General description Dual logic level N-channel MOSFET in a LFPAK56D package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use
|
Original
|
PDF
|
BUK9K18-40E
LFPAK56D
|
Untitled
Abstract: No abstract text available
Text: BUK9K52-60E Dual N-channel TrenchMOS logic level FET 23 July 2012 Product data sheet 1. Product profile 1.1 General description Dual logic level N-channel MOSFET in a LFPAK56D package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use
|
Original
|
PDF
|
BUK9K52-60E
LFPAK56D
|
bcm 4330
Abstract: telemecanique contactor catalogue A5 GNC mosfet philips ecg master replacement guide Elektronikon II keltron electrolytic capacitors PART NO SELEMA DRIVER MOTOR AC 12v dc EIM Basic MK3 lenze 8600 Atlas copco rc universal 60 min
Text: NEED IT NOW? BUY REMAN! SEE PAGE lxx xx xvi SOLUTIONS, SOLUTIONS. Q A r e q u a l i t y, c o s t , a n d t i m e i m p o r t a n t to you? A ELECTRICAL SOUTH! Q Do you spend too much of your valuable time dealing with too m a n y d i ff e r e n t r e p a i r v e n d o r s ?
|
Original
|
PDF
|
|
|
|
TB-580
Abstract: No abstract text available
Text: top hat Surface Mount Power Splitter/Combiner 2 Way-180° 75Ω Storage Temperature 5 to 1000 MHz Features Maximum Ratings Operating Temperature SBTCJ-13-75+ -40°C to 85°C -55°C to 100°C Power Input as a splitter 1.0W max. Permanent damage may occur if any of these limits are exceeded.
|
Original
|
PDF
|
Way-180°
SBTCJ-13-75+
DB1627
TB-580
|
res 301 ohm 1 1w
Abstract: SBTCJ-13-75 TB-580
Text: top hat Surface Mount Power Splitter/Combiner 2 Way-180° 75Ω Storage Temperature 5 to 1000 MHz Features Maximum Ratings Operating Temperature SBTCJ-13-75+ -40°C to 85°C -55°C to 100°C Power Input as a splitter 1.0W max. Permanent damage may occur if any of these limits are exceeded.
|
Original
|
PDF
|
Way-180°
SBTCJ-13-75+
DB1627
res 301 ohm 1 1w
SBTCJ-13-75
TB-580
|
Untitled
Abstract: No abstract text available
Text: BUK9K6R2-40E Dual N-channel TrenchMOS logic level FET 19 July 2012 Product data sheet 1. Product profile 1.1 General description Dual logic level N-channel MOSFET in a LFPAK56D package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use
|
Original
|
PDF
|
BUK9K6R2-40E
LFPAK56D
|
LFPAK56D
Abstract: sot1205 E2HD
Text: Package outline Plastic single ended surface mounted package LFPAK56D ; 8 leads A E E1 A b1 E2 c1 mounting base D H SOT1205 D1 D2 L 1 2 3 4 b (8x) e A1 w c A X C θ Lp detail X 2.5 mm 5 mm scale Dimensions Unit y C A max 1.05 nom min c c1 D(1) D1(1) A1 b
|
Original
|
PDF
|
LFPAK56D)
OT1205
sot1205
OT1205
LFPAK56D
E2HD
|
BUK9K45-100E
Abstract: No abstract text available
Text: BUK9K45-100E Dual N-channel TrenchMOS logic level FET 23 July 2012 Product data sheet 1. Product profile 1.1 General description Dual logic level N-channel MOSFET in a LFPAK56D package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use
|
Original
|
PDF
|
BUK9K45-100E
LFPAK56D
BUK9K45-100E
|
pico psu
Abstract: PFE1000F PFE500A PFC 600w
Text: APPLICATION GUIDE Content DPA Solutions 2 Point of Load Converters 3 Intermediate Bus Converters 5 DC/DC Converters 7 AC/DC Front Ends 15 Innovating reliable power About TDK-Lambda TDK-Lambda Corporation is one of the world’s largest manufacturers of standard and configurable power
|
Original
|
PDF
|
D-40472
pico psu
PFE1000F
PFE500A
PFC 600w
|
Untitled
Abstract: No abstract text available
Text: top hat Surface Mount Power Splitter/Combiner 2 Way-180° 75Ω Storage Temperature 5 to 1000 MHz Features Maximum Ratings Operating Temperature SBTCJ-13-75+ -40°C to 85°C -55°C to 100°C Power Input as a splitter 1.0W max. .
|
Original
|
PDF
|
Way-180Â
SBTCJ-13-75+
|
Untitled
Abstract: No abstract text available
Text: BUK7K5R1-30E Dual N-channel TrenchMOS standard level FET 23 July 2012 Product data sheet 1. Product profile 1.1 General description Dual standard level N-channel MOSFET in a LFPAK56D package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use
|
Original
|
PDF
|
BUK7K5R1-30E
LFPAK56D
|
PE2030
Abstract: No abstract text available
Text: .1050 HOLES SPECIFICATIONS FREQUENCY RANGE: 8 TO 18 GHz NUMBER OF OUTPUT PORTS: 4 MINIMUM ISOLATION: 1 8 dB MAXIMUM VSWR: 1 .5 0 MAXIMUM INSERTION LOSS: 1 .5 0 dB .380 2.000 ,2 5 0 -36 UNS- PASTERNACK ENTERPRISES, INC. P.O BOX 16759, IRVINE, CA 92623 PHONE 949) 261-1920 FAX (949) 261-7451
|
OCR Scan
|
PDF
|
PE2030
PE2030
|
D92N
Abstract: No abstract text available
Text: »v^-r‘^ 'V - M P T 1-112-07-G -T M a te i w ith : MPS NO. PINS PER ROW MPT1 Specifications: MPT1 I In sulator M aterial: Nature I Liquid Crystal P olym sr Term inal Material: Phosphor Bronze O p erating Tem p Range: -65°C to + 1 2 5 °C with Gold -65°C to +105°C with Tin
|
OCR Scan
|
PDF
|
1-112-07-G
1-800-SAMTEC-9
D92N
|
