Untitled
Abstract: No abstract text available
Text: LF PA K 56 PSMN3R0-30YLD N-channel 30 V, 3.0 mΩ logic level MOSFET in LFPAK56 using NextPowerS3 Technology 18 February 2014 Product data sheet 1. General description Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package. NextPowerS3 portfolio utilising NXP’s unique “SchottkyPlus” technology delivers
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PSMN3R0-30YLD
LFPAK56
LFPAK56
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MIFARE DESFire
Abstract: No abstract text available
Text: BUK9K29-100E Dual N-channel TrenchMOS logic level FET 28 August 2012 Product data sheet 1. Product profile 1.1 General description Dual logic level N-channel MOSFET in a LFPAK56D package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use
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BUK9K29-100E
LFPAK56D
MIFARE DESFire
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Untitled
Abstract: No abstract text available
Text: LF PA K 56 PSMN1R4-40YLD N-channel 40 V 1.4 mΩ logic level MOSFET in LFPAK56 using NextPower-S3 technology 11 July 2014 Product data sheet 1. General description Logic level gate drive N-channel enhancement mode MOSFET in 175 °C LFPAK56 package using advanced TrenchMOS Superjunction technology. This product has been
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PSMN1R4-40YLD
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LFPAK56
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Untitled
Abstract: No abstract text available
Text: PSMN1R0-30YLD N-channel 30 V, 1.0 mΩ logic level MOSFET in LFPAK56 using NextPowerS3 Technology 19 September 2014 Product data sheet 1. General description Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package. NextPowerS3 portfolio utilising NXP’s unique “SchottkyPlus” technology delivers
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PSMN1R0-30YLD
LFPAK56
LFPAK56
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Untitled
Abstract: No abstract text available
Text: LF PA K 56 PSMN1R2-30YLD N-channel 30 V, 1.2 mΩ logic level MOSFET in LFPAK56 using NextPowerS3 Technology 5 May 2014 Preliminary data sheet 1. General description Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package. NextPowerS3 portfolio utilising NXP’s unique “SchottkyPlus” technology delivers
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PSMN1R2-30YLD
LFPAK56
LFPAK56
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Untitled
Abstract: No abstract text available
Text: LF PA K 56 PSMN1R0-40YLD N-channel 40 V 1.1 mΩ logic level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus technology 11 July 2014 Product data sheet 1. General description Logic level gate drive N-channel enhancement mode MOSFET in 150 °C LFPAK56 package using advanced TrenchMOS Superjunction technology. This product has been
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PSMN1R0-40YLD
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LFPAK56
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Untitled
Abstract: No abstract text available
Text: LF PA K 56D BUK9K17-60E Dual N-channel 60 V, 17 mΩ logic level MOSFET 19 March 2014 Product data sheet 1. General description Dual logic level N-channel MOSFET in an LFPAK56D Dual Power-SO8 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101
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BUK9K17-60E
LFPAK56D
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Untitled
Abstract: No abstract text available
Text: LF PA K 56 PSMN1R4-40YLD N-channel 40 V 1.4 mΩ logic level MOSFET in LFPAK56 using NextPower-S3 technology 21 August 2014 Product data sheet 1. General description Logic level gate drive N-channel enhancement mode MOSFET in 175 °C LFPAK56 package using advanced TrenchMOS Superjunction technology. This product has been
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PSMN1R4-40YLD
LFPAK56
LFPAK56
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Untitled
Abstract: No abstract text available
Text: LF PA K5 6D SOT1205 LFPAK56D; Reel pack, SMD, 7" Q1/T1 Standard product orientation Orderable part number ending, 115 or X Ordering code 12NC ending 115 Rev. 1 — 13 August 2013 Packing information 1. Packing method Printed plano box Barcode label Reel
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OT1205
LFPAK56D;
001aak603
OT1205
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LFPAK56
Abstract: No abstract text available
Text: BUK7K5R1-30E Dual N-channel TrenchMOS standard level FET 23 July 2012 Product data sheet 1. Product profile 1.1 General description Dual standard level N-channel MOSFET in a LFPAK56D package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use
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BUK7K5R1-30E
LFPAK56D
LFPAK56
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04180
Abstract: No abstract text available
Text: LF PA K 56 PSMN041-80YL N-channel 80 V 41 mΩ logic level MOSFET in LFPAK56 1 May 2013 Product data sheet 1. General description Logic level gate drive N-channel enhancement mode Field-Effect Transistor FET in LFPAK56 package. This product has been designed and qualified for use in a wide range
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PSMN041-80YL
LFPAK56
LFPAK56
04180
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96E840
Abstract: No abstract text available
Text: LF PA K 56D BUK9K6R8-40E Dual N-channel 40 V, 7.2 mΩ logic level MOSFET 5 December 2013 Product data sheet 1. General description Dual logic level N-channel MOSFET in an LFPAK56D Dual Power-SO8 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101
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BUK9K6R8-40E
LFPAK56D
96E840
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Untitled
Abstract: No abstract text available
Text: LF PA K 56 PSMN3R0-30YLD N-channel 30 V, 3.0 mΩ logic level MOSFET in LFPAK56 using NextPowerS3 Technology 1 October 2013 Objective data sheet 1. General description Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package. NextPowerS3 portfolio utilising NXP’s unique “SchottkyPlus” technology delivers
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PSMN3R0-30YLD
LFPAK56
LFPAK56
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Untitled
Abstract: No abstract text available
Text: LF PA K 56 PSMN6R0-30YLD N-channel 30 V, 6.0 mΩ logic level MOSFET in LFPAK56 using NextPowerS3 Technology 10 February 2014 Product data sheet 1. General description Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package. NextPowerS3 portfolio utilising NXP’s unique “SchottkyPlus” technology delivers
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PSMN6R0-30YLD
LFPAK56
LFPAK56
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Untitled
Abstract: No abstract text available
Text: LF PA K 56 PSMN1R0-30YLD N-channel 30 V, 1.0 mΩ logic level MOSFET in LFPAK56 using NextPowerS3 Technology 30 May 2014 Product data sheet 1. General description Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package. NextPowerS3 portfolio utilising NXP’s unique “SchottkyPlus” technology delivers
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LFPAK56
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Untitled
Abstract: No abstract text available
Text: LF PA K 56 BUK7Y12-40E N-channel 40 V, 12 mΩ standard level MOSFET in LFPAK56 9 May 2013 Product data sheet 1. General description Standard level N-channel MOSFET in an LFPAK56 Power SO8 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101
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BUK7Y12-40E
LFPAK56
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Untitled
Abstract: No abstract text available
Text: LF PA K 56 BUK7Y21-40E N-channel 40 V, 21 mΩ standard level MOSFET in LFPAK56 7 May 2013 Product data sheet 1. General description Standard level N-channel MOSFET in an LFPAK56 Power SO8 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101
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BUK7Y21-40E
LFPAK56
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91840E
Abstract: S/91840E
Text: LF PA K 56D BUK9K18-40E Dual N-channel TrenchMOS logic level FET 23 April 2013 Product data sheet 1. General description Dual logic level N-channel MOSFET in a LFPAK56D package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use
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BUK9K18-40E
LFPAK56D
91840E
S/91840E
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MOSFET 4604
Abstract: 4604 mosfet
Text: LF PA K 56 BUK9Y15-100E N-channel 100 V, 15 mΩ logic level MOSFET in LFPAK56 9 May 2013 Product data sheet 1. General description Logic level N-channel MOSFET in an LFPAK56 Power SO8 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use
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BUK9Y15-100E
LFPAK56
MOSFET 4604
4604 mosfet
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BUK9Y65-100E
Abstract: No abstract text available
Text: LF PA K 56 BUK9Y65-100E N-channel 100 V, 65 mΩ logic level MOSFET in LFPAK56 9 May 2013 Product data sheet 1. General description Logic level N-channel MOSFET in an LFPAK56 Power SO8 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use
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BUK9Y65-100E
LFPAK56
BUK9Y65-100E
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Untitled
Abstract: No abstract text available
Text: LF PA K 56D BUK9K52-60E Dual N-channel TrenchMOS logic level FET 23 April 2013 Product data sheet 1. General description Dual logic level N-channel MOSFET in a LFPAK56D package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use
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Untitled
Abstract: No abstract text available
Text: LF PA K 56 BUK9Y12-100E N-channel 100 V, 12 mΩ logic level MOSFET in LFPAK56 9 May 2013 Product data sheet 1. General description Logic level N-channel MOSFET in an LFPAK56 Power SO8 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use
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BUK9Y12-100E
LFPAK56
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Untitled
Abstract: No abstract text available
Text: LF PA K 56 BUK7Y29-40E N-channel 40 V, 29 mΩ standard level MOSFET in LFPAK56 7 May 2013 Product data sheet 1. General description Standard level N-channel MOSFET in an LFPAK56 Power SO8 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101
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BUK7Y29-40E
LFPAK56
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BUK9Y25-60E
Abstract: marking 92560E
Text: LF PA K 56 BUK9Y25-60E N-channel 60 V, 25 mΩ logic level MOSFET in LFPAK56 7 May 2013 Product data sheet 1. General description Logic level N-channel MOSFET in an LFPAK56 Power SO8 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use
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BUK9Y25-60E
LFPAK56
BUK9Y25-60E
marking 92560E
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