2SD895
Abstract: 2SB775 1116MW 6792 transistor 679f
Text: Ordering number:679F 2SB775 : PNP Epitaxial Planar Silicon Transistor 2SD895 : NPN Triple Diffused Planar Silicon Transistor 2SB775/2SD895 85V/6A, AF 35W Output Applications Features Package Dimensions • Wide ASO because of on-chip ballast resistance. · Capable of being mounted easily becasuse of onepoint fixing type plastic molded package
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2SB775
2SD895
2SB775/2SD895
2SB775/2SD895]
2SD895
2SB775
1116MW
6792
transistor 679f
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CXK5B18120TM
Abstract: No abstract text available
Text: CXK5B18120TM -12 65536-word x 18-bit High Speed Bi-CMOS Static RAM For the availability of this product, please contact the sales office. Description CXK5B18120TM is a high speed 1M bit BiCMOS static RAM organized as 65536 words by 18 bits. Operating on a single 3.3V supply this
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CXK5B18120TM
65536-word
18-bit
1116mW
400mil
44pin
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LTM9012
Abstract: LTM9009-14 LTM9010-14
Text: LTM9012 Quad 14-Bit, 125Msps ADC with Integrated Drivers FEATURES n n n n n n n n DESCRIPTION The LTM 9012 is a 4-channel, simultaneous sampling 14-bit µModule® analog-to-digital converter ADC with integrated, fixed gain, differential ADC drivers. The low
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LTM9012
14-Bit,
125Msps
14-bit
318mW
Msps/65Msps
99mW/126mW/191mW,
QFN-40
LTC2266-14/LTC2267-14/
LTC2268-14
LTM9012
LTM9009-14
LTM9010-14
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2sb77
Abstract: 2SB 545 2SB775 2SD895 2SD 388 A 2sb32
Text: Ordering number : ENN679F SANYO Semiconductors DATA SHEET 2SB775 / 2SD895 PNP Epitaxial Planar Silicon Transistor NPN Triple Diffused Planar Silicon Transistor 85V/6A AF 35W Output Applications Features • Wide ASO because of on-chip ballast resistance. · Capable of being mounted easily becasuse of one-point fixing type plastic molded package
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ENN679F
2SB775
2SD895
2SB775
2sb77
2SB 545
2SD895
2SD 388 A
2sb32
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2SB775
Abstract: 2SB77 2SD895 1116MW
Text: Ordering number:ENN679F 2SB775 : PNP Epitaxial Planar Silicon Transistor 2SD895 : NPN Triple Diffused Planar Silicon Transistor 2SB775/2SD895 85V/6A, AF 35W Output Applications Package Dimensions unit:mm 2022A [2SB775/2SD895] 15.6 14.0 3.2 3.5 4.8 2.0 1.3
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ENN679F
2SB775
2SD895
2SB775/2SD895
2SB775/2SD895]
2SB775
2SB77
2SD895
1116MW
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CHN 519
Abstract: CHN 833 CHN 535 chn 714 CS9012 9012 011 chn 734 CHN 647 234mW sck 054 519
Text: LTM9012 Quad 14-Bit, 125Msps ADC with Integrated Drivers Features Description 4-Channel Simultaneous Sampling ADC with Integrated, Fixed Gain, Differential Drivers n 68.3dB SNR n 78dB SFDR n Low Power: 1.27W Total, 318mW per Channel n 1.8V ADC Core and 3.3V Analog Input Supply
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LTM9012
14-Bit,
125Msps
318mW
14-bit
inMsps/105Msps/125Msps
80Msps/105Msps/125Msps
178mW/234mW/360mW,
QFN-52
CHN 519
CHN 833
CHN 535
chn 714
CS9012
9012 011
chn 734
CHN 647
234mW
sck 054 519
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Untitled
Abstract: No abstract text available
Text: SONY C X K 5B 18120TM -12 65536-word x 18-bit High Speed Bi-CMOS Static RAM Description CXK5B18120TM is a high speed 1M bit Bi CM OS static RAM organized as 65536 words by 18 bits. Operating on a single 3.3V supply this asynchronous IC is suitable for use in high speed
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18120TM
65536-word
18-bit
CXK5B18120TM
1116mW
400mil
44pin
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NG42
Abstract: No abstract text available
Text: 5 18120 J/TM 12 SONY CXK B 65,536-word x 18-bit High-Speed Bi-CMOS Static RAM Description C XK5B18120J/TM are high speed 1Mbit Bi-CMOS sta tic RAMs orga nize d as 6 5 ,5 3 6 -w o rd s-b y-1 8 -b its. Operating on a single 3.3V supply these asynchronous ICs are suitable for use in high speed and low power
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536-word
18-bit
XK5B18120J/TM
1116mW
CXK5B18120J
400mil,
44-pin
CXK5B18120TM
NG42
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