Untitled
Abstract: No abstract text available
Text: PRELIMINARY MT28F002 2 5 6 K x 8 FLASH MEMORY |U|IC=RON FLASH MEMORY 256K x 8 FEATURES PIN ASSIGNMENT Top View • Five erase blocks: 16KB boot block (protected) Two 8KB param eter blocks Two m ain m em ory blocks • 5V ±10% Vcc; 12V ±5% V pp • A ddress access times: 60ns, 80ns, 100ns
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MT28F002
100ns
40-Pin
00000H)
56-PIN
111S4T
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Untitled
Abstract: No abstract text available
Text: ADVANCE FLASH MEMORY 4 MEG martV oltage , BOOT BLOCK, EXTENDED TEMPERATURE S FEATURES PIN ASSIGNMENT Top View • Extended temperature range operation: -40° to +85° C • Seven erase blocks: 16KB/8K-word boot block (protected) Two 8KB/ 4K-word parameter blocks
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16KB/8K-word
100ns
110ns,
150ns
MT28SF400
56-PIN
111S4T
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T2D 93
Abstract: No abstract text available
Text: MICRON SEMICONDUCTOR INC b7E D • blll54T ÜQO'îEe? ñ'ÍQ BIMRN MICRON 256K SRAM MT5C2561 X 1 SR A M 256K X 1 SRAM • H igh speed: 1 0 ,1 2 ,1 5 ,2 0 ,2 5 and 35ns • High-perform ance, low-power, CM O S double-m etal process • Single +5V ±10% pow er supply_
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blll54T
MT5C2561
24-Pin
T2D 93
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Untitled
Abstract: No abstract text available
Text: n i CR ON S E M I C O N D U C T O R IN b3E D • blllS^ OOOflbTb 11b ■ MICRON I k m ,c o n d u c t o » « c NRN M T 4C 16256/7/8/9 L 256K X 16 W ID ED R A M WIDE DRAM 256KX16DRAM LOW POWER, EXTENDED REFRESH FEATURES • Industry-standard xl6 pinouts, timing, functions
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256KX16DRAM
MT4C16257/9
MT4C16258/9
512-cyde
MT4C16256/7/8/9
MT4C1C25OTV9L
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Untitled
Abstract: No abstract text available
Text: ADVANCE MICRON M T16LD T 464(S) 4 MEG X 64 DRAM MODULE I 4 MEG X 64 DRAM 3.3V, OPTIONAL SELF REFRESH FEATURES • Industry-standard pinout in a 168-pin, dual read-out, single-in-line package • High-perform ance CM OS silicon-gate process • Single +3.3V ±0.3V pow er supply
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168-pin,
048-cycle
MT16LD
A0-A11
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Untitled
Abstract: No abstract text available
Text: ADVANCE MT28F800 512K x 16, 1 MEG x 8 FLASH MEMORY 512Kx16,1 MEGx8 FLASH MEMORY FEATURES • Eleven erase blocks: 16KB/8K-word boot block protected Two 8KB/4K-word parameter blocks Eight main memory blocks • Deep Power-Down Mode: 5jiA MAX • 5V ±10% V cc and Vpp
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MT28F800
512Kx16
16KB/8K-word
100ns
288x16
100ns
00000H)
56-PIN
111S4T
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Untitled
Abstract: No abstract text available
Text: ADVANCE MT28SF161 MTZBSF161 1 MEG x 16, 2 MEG x 8 FLASH MEMORY MICRON I FLASH MEMORY 1 m eg x 16,2 MEGx8 3V FEATURES • • • • PIN ASSIGNMENT Top View Thirty-two 64KB/(32K-word) erase blocks Programmable sector lock Deep Power-Down Mode: 5(iA M A X
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MT28SF161
MTZBSF161
32K-word)
56-Pin
100ns,
150ns
G01S43L,
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