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    113 SOT Search Results

    113 SOT Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    7UL2T125FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T126FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    TCR2EF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation
    TCR2LF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation
    SF Impression Pixel

    113 SOT Price and Stock

    Linear Integrated Systems SST113-SOT-23-3L-ROHS

    JFET N-CH 35V SOT23-3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SST113-SOT-23-3L-ROHS Cut Tape 7,194 1
    • 1 $3.4
    • 10 $2.344
    • 100 $3.4
    • 1000 $1.3875
    • 10000 $1.3875
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    SST113-SOT-23-3L-ROHS Digi-Reel 7,194 1
    • 1 $3.4
    • 10 $2.344
    • 100 $3.4
    • 1000 $1.3875
    • 10000 $1.3875
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    SST113-SOT-23-3L-ROHS Reel 6,000 3,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $1.3875
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    Renesas Electronics Corporation ISL28113SOT23EVAL1Z

    EVALUATION BOARD FOR ISL28113
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey ISL28113SOT23EVAL1Z Box 1
    • 1 $68.75
    • 10 $68.75
    • 100 $68.75
    • 1000 $68.75
    • 10000 $68.75
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    Avnet Americas ISL28113SOT23EVAL1Z Box 18 Weeks 1
    • 1 $61.11111
    • 10 $61.11111
    • 100 $61.11111
    • 1000 $61.11111
    • 10000 $61.11111
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    Mouser Electronics ISL28113SOT23EVAL1Z
    • 1 $69.43
    • 10 $69.43
    • 100 $69.43
    • 1000 $69.43
    • 10000 $69.43
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    Linear Integrated Systems SST113-SOT-23

    N-CH JFET Switches
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    NAC SST113-SOT-23 Reel 14,540 1
    • 1 $1.62
    • 10 $1.62
    • 100 $1.54
    • 1000 $1.47
    • 10000 $1.47
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    113 SOT Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    copper bonding wire

    Abstract: No abstract text available
    Text: PCN #: 113 Notification Date: 25 May 2010 mailto:processchange@centralsemi.com http://www.centralsemi.com/processchange Process Change Notice Parts Affected: All discrete semiconductor devices manufactured in the SOD-123, SOT-23, and SOT-323 packages. Extent of Change:


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    PDF OD-123, OT-23, OT-323 copper bonding wire

    Untitled

    Abstract: No abstract text available
    Text: UTC MMBT1815 NPN EPITAXIAL SILICON TRANSISTOR AUDIO FREQUENCY AMPLIFIER HIGH FREQUENCY OSC NPN TRANSISTOR FEATURES 2 *Collector-Emitter voltage: BVCEO=50V *Collector current up to 150mA * High hFE linearity *complimentary to MMBT1015 1 3 MARKING SOT-113 C4


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    PDF MMBT1815 150mA MMBT1015 OT-113 QW-R210-004

    Untitled

    Abstract: No abstract text available
    Text: UTC MMBT1015 PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY PNP AMPLIFIER TRANSISTOR FEATURES *Collector-Emitter Voltage: BVCEO=-50V *Collector current up to 150mA *High Hfe linearity *Complement to MMBT1815 2 1 3 MARKING A4 SOT-113 1:EMITTER 2:BASE 3: COLLECTOR


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    PDF MMBT1015 150mA MMBT1815 OT-113 QW-R210-003

    MMBT1015

    Abstract: MMBT1815
    Text: UTC MMBT1815 NPN EPITAXIAL SILICON TRANSISTOR AUDIO FREQUENCY AMPLIFIER HIGH FREQUENCY OSC NPN TRANSISTOR FEATURES 2 *Collector-Emitter voltage: BVCEO=50V *Collector current up to 150mA * High hFE linearity *complimentary to MMBT1015 1 3 MARKING SOT-113 C4


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    PDF MMBT1815 150mA MMBT1015 OT-113 QW-R210-004 MMBT1015

    Untitled

    Abstract: No abstract text available
    Text: UTC MMBT1015 PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY PNP AMPLIFIER TRANSISTOR FEATURES *Collector-Emitter Voltage: BVCEO=-50V *Collector current up to 150mA *High Hfe linearity *Complement to MMBT1815 2 1 3 MARKING A4 SOT-113 1:EMITTER 2:BASE 3: COLLECTOR


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    PDF MMBT1015 150mA MMBT1815 OT-113 QW-R210-003

    SMD IC sot23-5 5K

    Abstract: No abstract text available
    Text: TSH110-111-112-113-114 WIDE BAND, LOW NOISE OPERATIONAL AMPLIFIERS • ■ ■ ■ ■ ■ ■ ■ ■ LOW NOISE: 3nV/√Hz PIN CONNECTIONS top view LOW SUPPLY CURRENT: 3.2mA 47mA OUTPUT CURRENT BANDWIDTH: 100MHz TSH110 : SOT23-5 Output 1 5V to 12V SUPPLY VOLTAGE


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    PDF TSH110-111-112-113-114 100MHz OT23-5, TSH110 OT23-5 TSH111 TSH110 TSH111, TSH112, TSH113 SMD IC sot23-5 5K

    TSH110

    Abstract: TSH111 TSH112 TSH113 TSH114 TSSOP14 TSH110-TSH111-TSH112-TSH113-TSH114
    Text: TSH110-111-112-113-114 WIDE BAND, LOW NOISE OPERATIONAL AMPLIFIERS • ■ ■ ■ ■ ■ ■ ■ ■ LOW NOISE: 3nV/√Hz PIN CONNECTIONS top view LOW SUPPLY CURRENT: 3.2mA 47mA OUTPUT CURRENT BANDWIDTH: 100MHz TSH110 : SOT23-5 Output 1 5V to 12V SUPPLY VOLTAGE


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    PDF TSH110-111-112-113-114 100MHz TSH110 OT23-5 OT23-5, TSH111 TSH110 TSH111, TSH112, TSH113 TSH111 TSH112 TSH114 TSSOP14 TSH110-TSH111-TSH112-TSH113-TSH114

    PHP18NQ10T

    Abstract: PHB27NQ10T BYC05B-600 PHB23NQ10T pbyr1045 BYV72EW200 Msd119 BYC08B-600 byv26 equivalent bridge rectifier 8341
    Text: Philips Semiconductors Power in Switched Mode Power Supplies SOT 428 DPAK SOT 404 SOT 223 SOT 429 D 2-PAK 1999 TO247 M3D306 TO220AB SOD 59 TO220AC SOT 186A SOD 113 ISOLATED TO22OAB 2-PIN SOT 186A Philips Semiconductors Ð a worldwide company Argentina: see South America


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    PDF M3D306 O220AB O220AC O22OAB 30EX-150 BYQ30EX-200 BYV32EX-150 BYV42EX-150 BYV32EX-200 BYV42EX-200 PHP18NQ10T PHB27NQ10T BYC05B-600 PHB23NQ10T pbyr1045 BYV72EW200 Msd119 BYC08B-600 byv26 equivalent bridge rectifier 8341

    identification code c3 SOT23-5

    Abstract: TSH110 TSH111 TSH112 TSH113 TSH114 TSSOP14
    Text: TSH110-111-112-113-114 WIDE BAND, LOW NOISE OPERATIONAL AMPLIFIERS • ■ ■ ■ ■ ■ ■ ■ ■ LOW NOISE: 3nV/√Hz LOW SUPPLY CURRENT: 3.2mA 47mA OUTPUT CURRENT BANDWIDTH: 100MHz TSH110 : SOT23-5 Output 1 5V to 12V SUPPLY VOLTAGE SLEW-RATE: 450V/µs


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    PDF TSH110-111-112-113-114 100MHz TSH110 OT23-5 OT23-5, TSH111 TSH110 TSH111, TSH112, TSH113 identification code c3 SOT23-5 TSH111 TSH112 TSH114 TSSOP14

    BT148

    Abstract: thyristor 12V it 1A BT148-400
    Text: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company THYRISTOR BT148- 400 TO-126 Plastic Package For use in General Purpose Switching and Phase Control Applications ABSOLUTE MAXIMUM RATINGS PARAMETER VALUE UNIT 400 V half sine wave, Tmb < 113ºC


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    PDF ISO/TS16949 BT148- O-126 C-120 Rev150404E BT148 thyristor 12V it 1A BT148-400

    IEC-870-5-103

    Abstract: MSTB 2.5 -5.08 084-CA MINIATURE CIRCUIT BREAKER Breaking capacity abb
    Text: 3URWHFW,7 %UHDNHU SURWHFWLRQ DQG FRQWURO WHUPLQDO 5 % &  1MRK 505 113-BEN Page 1 Revision: – Issued: October 2003 Data subject to change without notice HDWXUHV • Pre-configured protection terminal for costeffective engineering and commissioning


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    PDF 113-BEN 114-UEN 115-UEN 116-UEN 117-UEN 009-BEN 112-BEN SE-721 IEC-870-5-103 MSTB 2.5 -5.08 084-CA MINIATURE CIRCUIT BREAKER Breaking capacity abb

    SOT23-6

    Abstract: 02 SOT23-6
    Text: SOT23-6 Thermal Resistance and Derating Information SOT23-6 1.1W devices j-a=113°C/W Maximum Mounted on a FR4 p.c.b. of 50mm x 50mm 2"x2" connected using 25mm x 0.5mm copper wire 100 80 60 D=0.5 40 D=0.2 Single Pulse 20 D=0.05 D=0.1 100µ 1m 10m 100m 1


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    PDF OT23-6 OT23-6 SOT23-6 02 SOT23-6

    newark

    Abstract: L054BT26 15KV LR052BT14
    Text: E L E C T R O N I C ESD Protector Application Friday, 18 July 2008 Sirectifier Global Corp., Delaware, U.S.A. Sales Representatives: U.S.A. 113 Barksdale Professional Center in the City of Newark, County of New Castle, Delaware e-mail: sgc@sirectsemi.com China Room 320, Building Chaohui,


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    PDF L054BT26 newark L054BT26 15KV LR052BT14

    Untitled

    Abstract: No abstract text available
    Text: LF PA K 56 BUK7Y113-100E N-channel 100 V, 113 mΩ standard level MOSFET in LFPAK56 8 May 2013 Product data sheet 1. General description Standard level N-channel MOSFET in an LFPAK56 Power SO8 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101


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    PDF BUK7Y113-100E LFPAK56

    Untitled

    Abstract: No abstract text available
    Text: LF PA K 56 BUK9Y113-100E N-channel 100 V, 113 mΩ logic level MOSFET in LFPAK56 8 May 2013 Product data sheet 1. General description Logic level N-channel MOSFET in an LFPAK56 Power SO8 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use


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    PDF BUK9Y113-100E LFPAK56

    BTS 129

    Abstract: BTS 240 tle 4214 BSP 452 bts 550 BTS 721-L1 BTS 740 s2 bts555p bts 2 2 2 N1 5226
    Text: Overview Low Side Switches in Smart SIPMOS or Smart Power Technology RON mΩ 1 Channel 2 Channel 4 Channel 2 x 800 4 x 8000 500 TLE 5212 G BSP 75 400 TLE 5216 G 2 x 350 2 x 200 TLE 5226 G TLE 5227 G 250 TLE 4224-2 200 BTS 110 170 150 BTS 113 A BTS 112 A


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    PDF 410x2 432x2 442x2 BTS 129 BTS 240 tle 4214 BSP 452 bts 550 BTS 721-L1 BTS 740 s2 bts555p bts 2 2 2 N1 5226

    SKH122

    Abstract: SKH-122 UPS schematic diagram using PIC microcontroller IRG4B30 0.75KW siemens motor electric fm transmitter 2KM documentation avr FOR ALTERNATOR circuit diagram Bluebird Millennium board 2.2KW siemens gear motor sine wave inverter schematic diagram PCB ups 12v
    Text: INDEX Order Code Description Manufacturer 688-113 688-125 688-405 688-137 688-149 688-101 743-471 548-613 548-625 — — — — — — 795-987 670-820 — — — — — 663-335 663-293 795-331 687-625 794-788 794-776 796-413 795-422 795-410 795-483 796-300


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    PDF SAB-C505C-LM: SAB-C515C-LM: SAB-C167CR-LM: 16-bit SAE81C90-N: SAE81C91-N: SAB-C504-LM: BTS149: BSP350: BSP452: SKH122 SKH-122 UPS schematic diagram using PIC microcontroller IRG4B30 0.75KW siemens motor electric fm transmitter 2KM documentation avr FOR ALTERNATOR circuit diagram Bluebird Millennium board 2.2KW siemens gear motor sine wave inverter schematic diagram PCB ups 12v

    transistor fp 1016

    Abstract: BFQ34T ON4497 FP 801 UBB361
    Text: Philips Semiconductors bbSBSBl G D S lS b T 113 • APX Product specification NPN 4 GHz wideband transistor BFQ34T N AMER PHILIPS/DISCRETE b'ìE ]> PINNING DESCRIPTION NPN transistor in a plastic SOT37 envelope, intended for wideband amplification applications. The


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    PDF ON4497) BFQ34T transistor fp 1016 BFQ34T ON4497 FP 801 UBB361

    Untitled

    Abstract: No abstract text available
    Text: 113 Surface M ount Devices Zener Diodes, SOT-23 350mW , Pinout H (cont.) Zener Impedance ^Z (Nom)* @ IZT lR (Max) Temperature Coefficient Zzk (Max) Zr t (Max) *ZK= 0-25mA @VR Type (V) @ <z (mA) ft (mA) (ft) 0vz (Max) (%/°C) (txA) (V) PMBZ5241B PMBZ5242B


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    PDF OT-23 350mW) 0-25mA PMBZ5241B PMBZ5242B PMBZ5243B PMBZ5244B PMBZ5245B PMBZ5246B PMBZ5247B

    apx transistor

    Abstract: No abstract text available
    Text: • bbS3T31 00Z353T 113 ■ APX Philips Semiconductors_ N APIER PHILIPS/ DISCR ETE b?E D BF545A; BF545B; BF545C N-channel silicon junction field-effect transistor FEATURES Product specification QUICK R EFER EN CE DATA MAX. UNIT “ 30 V BF545A


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    PDF bbS3T31 00Z353T BF545A; BF545B; BF545C BF545A BF545B apx transistor

    digital countdown timer

    Abstract: countdown timer programmable timer for appliances digital count up and countdown timer 4-digit lcd 6.4mm
    Text: SÌ R Neuu Series' Of LCD Digital Countdoujn/Countup Timers For Multi-applications Model: TR 119 LCD Countdown/ Countup Timers Clock Model: TRI 18 2 Channel Jumbo display Timer Clock Specifications: M O DEL TR 112/TR 113 • 4-digit display countdown timer


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    PDF 112/TR 70mmx73mmx digital countdown timer countdown timer programmable timer for appliances digital count up and countdown timer 4-digit lcd 6.4mm

    Untitled

    Abstract: No abstract text available
    Text: • bbSBIBl Q0EMS73 113 « A P X A AMER PHILIPS/DISCRETE BCW 60 SERIES b?E D ; v SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N silicon transistors, in a microminiature plastic envelope, intended for low level, low noise, low frequency purpose applications in hybrid circuits.


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    PDF Q0EMS73 bbS3031 003457b

    Untitled

    Abstract: No abstract text available
    Text: PART NUMBER REV. LDD —S M C 3 0 0 8 R I —SOTR B UNCONTROLLED DOCUMENT 3,75 [0,148] — 000.90 [00,035] 20 PLS. 20 REV. A B 0,80 [0,032] 11 m V m m m m m m m t h E.C.N. NUMBER AND REVISION COMMENTS E.C.N. #113 39 & 11373. E.C.N. #11446. DATE 12.04.06.


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    PDF LDD-SMC3008RI-SOTR 100juA

    BB453

    Abstract: BF5458 D103D BF545A BF545B BF545C MSB003 UBB467 SFs SOT23 dk transistor
    Text: • P h i l i p bb53T31 002355^ 113 ■ APX p Product specification N-channel silicon junction field-effect transistor FEATURES N AriER b «>■£/« BF545Aî BF545Bî BF545C QUICK REFERENCE DATA • Low leakage level typ. 500 fA • High gain ±vDS • Low cut-off voltage (max. 2.2 V


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    PDF BF545Ai BF545B5 BF545C BF545A) BF545A BF545A BF545B MBB471 BB453 BF5458 D103D BF545C MSB003 UBB467 SFs SOT23 dk transistor