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    1146 TRANSISTORS Search Results

    1146 TRANSISTORS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    CA3082 Rochester Electronics LLC CA3082 - Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    CA3081F Rochester Electronics LLC CA3081 - Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    1146 TRANSISTORS Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    bolometer sensor

    Abstract: PHOTODIODE current voltage amplifier array Infrared-Sensor working circuit schematic color sensor FillFactory fuga light sensor abstract SMALL ELECTRONICS PROJECTS electrical engineering projects bolometer sensor data sheet line follower sensor
    Text: 1146 IEEE JOURNAL OF SOLID-STATE CIRCUITS, VOL. 35, NO. 8, AUGUST 2000 A Logarithmic Response CMOS Image Sensor with On-Chip Calibration Spyros Kavadias, Member, IEEE, Bart Dierickx, Danny Scheffer, Andre Alaerts, Dirk Uwaerts, and Jan Bogaerts Abstract—CMOS image sensors with logarithmic response are


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    transistor y1

    Abstract: aes 1136 detecteur magnetique Schmersal capteur de position 1146 transistors AES1145
    Text: Montage- und Anschlussanleitung / Sicherheitsbaustein Mounting and wiring instructions / Safety monitoring module Instructions de montage et de câblage / Module de sécurité deutsch Bestimmung und Gebrauch Die Sicherheitsbausteine, zum Einsatz in Sicherheitsstromkreisen,


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    tag 9205

    Abstract: 800MHz CDMA Handset Circuit Diagram Wireless landline handset circuit diagram qualcomm 7200 msm7* qualcomm TAG 9202 800MHz CDMA Handset complete Circuit Diagram Umbilical cord MCI 9201 ERICSSON BML
    Text: WHITE PAPER O K I T E L E C O M P R O D U C T S Technology Directions for Personal Communications Systems October 1995 ––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––– • Introduction ■


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    1-800-OKI-6388 tag 9205 800MHz CDMA Handset Circuit Diagram Wireless landline handset circuit diagram qualcomm 7200 msm7* qualcomm TAG 9202 800MHz CDMA Handset complete Circuit Diagram Umbilical cord MCI 9201 ERICSSON BML PDF

    rede

    Abstract: AN1146 X4C105
    Text: X4C105 NOVRAM Features and Applications Application Note April 21, 2005 AN1146.0 Author: Peter Chan Introduction Have you ever experienced a power failure during a “save to disk” operation, then wondered, “Is my file saved correctly?” Have you had the need to track a critical process where a power glitch can cause the loss of status


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    X4C105 AN1146 rede PDF

    A8A Transistor

    Abstract: SOT-23 marking a8x transistor A8J SOT-23 A8A A8A Transistor sot23
    Text: MMUN2211LT1 Series Preferred Devices Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT Bias Resistor


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    MMUN2211LT1 OT-23 COLT-23 OT-23 A8A Transistor SOT-23 marking a8x transistor A8J SOT-23 A8A A8A Transistor sot23 PDF

    Untitled

    Abstract: No abstract text available
    Text: MCP6541/1R/1U/2/3/4 Push-Pull Output Sub-Microamp Comparators Features: Description: • • • • The Microchip Technology Inc. MCP6541/1R/1U/2/3/4 family of comparators is offered in single MCP6541, MCP6541R, MCP6541U , single with Chip Select (CS) (MCP6543), dual (MCP6542) and quad (MCP6544)


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    MCP6541/1R/1U/2/3/4 MCP6541, MCP6541R, MCP6541U) MCP6543) MCP6542) MCP6544) DS21696H-page PDF

    VINA24

    Abstract: Linear Technology mark code lt e3
    Text: MCP6541/1R/1U/2/3/4 Push-Pull Output Sub-Microamp Comparators Features: Description: • • • • The Microchip Technology Inc. MCP6541/1R/1U/2/3/4 family of comparators is offered in single MCP6541, MCP6541R, MCP6541U , single with Chip Select (CS) (MCP6543), dual (MCP6542) and quad (MCP6544)


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    MCP6541/1R/1U/2/3/4 MCP6541, MCP6541R, MCP6541U) MCP6543) MCP6542) MCP6544) OT-23-5, SC-70-5 VINA24 Linear Technology mark code lt e3 PDF

    buz 350 equivalent

    Abstract: BUP 203 transistor buz 36 BUP 312 BUP 304 leistungstransistoren bup 401 datasheet transistor buz 350 bup 213 BUP 309
    Text: Typenübersicht Selection Guide • Leistungstransistoren Forts. ■ Typ VDS ■ Type V 50 50 60 50 50 60 50 50 50 50 100 100 100 100 200 200 200 200 500 500 500 1000 1000 1000 1000 400 400 400 60 60 50 50 50 ■ BUZ 10 ■ BUZ 10L ■ BUZ 10S2 ■ BUZ 11


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    O-220 O-218 buz 350 equivalent BUP 203 transistor buz 36 BUP 312 BUP 304 leistungstransistoren bup 401 datasheet transistor buz 350 bup 213 BUP 309 PDF

    HP 8510

    Abstract: rf up converter PC8109
    Text: Application Note Usage and Application of µPC8106 and µPC8109 2.0-GHz Silicon Frequency Up Converter ICs for Mobile Communications Document No. P13683EJ1V0AN00 1st edition Date Published January 1999 N CP(K) 1999 Printed in Japan [MEMO] 2 The information in this document will be updated without notice.


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    PC8106 PC8109 P13683EJ1V0AN00 any88-6130 HP 8510 rf up converter PC8109 PDF

    6lfl

    Abstract: SD 1496 transistor sd1145 1135 sd 1144 XO 18 .230 6lfl TO-117SL
    Text: SGS-THOMSON TELECOM AND DATA COMMUNICATIONS M3 ©[I[LIl g'ir®@R!lö(gi RF & MICROWAVE TRANSISTORS TO-39 TO-11TSL .280 4L SL (B XO-72 SL 450 . 512 MHz Package Type Config. CLASS C FOR MOBILE APPLICATIONS VCc (V) Pqut mm (W) SD 1132-4 SD 1115-2 SD 1482


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    O-11TSL XO-72 O-117SL 6lfl SD 1496 transistor sd1145 1135 sd 1144 XO 18 .230 6lfl TO-117SL PDF

    Untitled

    Abstract: No abstract text available
    Text: Tem ic TN3012L S e m i c o n d u c t o r s N-Channel Enhancement-Mode MOSFET Transistors Product Summary V BR DSS M in (V) r DS<on) M a x (Q ) ^GSrth) (V) I d (A) 0.8 to 3 0.18 12@ V GS= 1 0 V 300 20 @ VGS * 4.5 V Features Benefits • • • • • •


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    TN3012L -226A P-37409--Rev. 04-Jul-94 PDF

    2SC2719

    Abstract: 2sc2720 2sc2681 CRM 1150 138D 2SA1133 2SC2660 2SC2710 2SC2716 HJR 7 200
    Text: 5 - - FOR USE BY ELECTRICIANS OVERSEAS : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English


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    2SC2719 255nS 225nS 2SC2720 540nS 490nS 2SC2721 200/unit. 2sc2681 CRM 1150 138D 2SA1133 2SC2660 2SC2710 2SC2716 HJR 7 200 PDF

    Untitled

    Abstract: No abstract text available
    Text: T em ic TP1220L, TP/VP2020L, BSS92_ sì„conix P-Channel Enhancement-Mode MOS Transistors Product Summary P art N um ber V BR DSS M in (V) r DS(on) M ax (£2) VGS(lh) (V) I d (A) TP1220L -1 2 0 20 @ V GS = -4 .5 V —1 to -2 .4 -0 .1 2 TP2020L -2 0 0


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    TP1220L, TP/VP2020L, BSS92_ TP1220L TP2020L VP2020L BSS92 P-37994-- PDF

    2SC1123

    Abstract: 138D
    Text: 5 - - FOR U SE BY E L E C T R IC IA N S O V E R S E A S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English


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    D43C8

    Abstract: D43C5 D43C7 D43C9 D43C D42C D43C10 D43C11 D43C2 D43C3
    Text: Silicon Power Tab @ 1 2 1 • S D43C Transistors “ Color M olded" The General Electric D43C is a green, silicone plastic encapsulated, power transistor designed for various specific and general purpose applications, such as: output and driver stages of amplifiers operating at frequencies


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    diode j3x

    Abstract: D67DE5 D67DE 400-500 D67DE6 D67DE7 D67DE ZN442 k 518
    Text: HIGH SPEED NPN POWER DARLINGTON TRANSISTORS The General Electric D67DE is a high current power darlington. It features collector isolation from the heat sink, an internal construction designed for stress-free operation at temperature extremes, hefty screw terminals for emitter and


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    D67DE5 D67DE diode j3x D67DE 400-500 D67DE6 D67DE7 ZN442 k 518 PDF

    9033 transistor

    Abstract: PT8828 2N4932 PT8740 BLW27 BLX66 sd1315 BLY94 MM1669 PT8811
    Text: 0.75. 4.2 GHz microwave transistors for class C operation O transistors hyperfréquences, classe C TYPE TH 1002 TH 1005 TH 1010 TH 2001 TH 2003 TH 2005 TH 2302 TH 2304 TH 2307 TH 3000 TH 3001 TH 3003 TH 3005 TH 4200 TH 4201 2 IM 4428 2N 4429 2N 4430 2N 4431


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    302N6082 BM80-12 SD1416 MM1601 MRF631 SD1144 PT8549 SD1214 N5054 2N3553 9033 transistor PT8828 2N4932 PT8740 BLW27 BLX66 sd1315 BLY94 MM1669 PT8811 PDF

    ge d43c5

    Abstract: D43C8 D43C3 D43C2 d42c8 D42C5 D43C5 D42C1 D42C2 D42C3
    Text: SILICON POWER TRANSISTORS C O M PL E M E NT A RY - 3 A MPE RE S G IE T y p e PN P NPN Pt T c = 2 5 °C W D 42C 1 - 1 2 .5 v CEO M in . (V ) 30 h F'E •c 200m A C o n t. @ I V , (A i ■ M in . M ax. 3 .0 25 - h FE @ 1 V , 1A COM M ENTS Package Type M in .


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    200mA D42C1 D43C1 D42C2 D43C2 D42C3 D43C3 D42C4 D43C4 D42C5 ge d43c5 D43C8 d42c8 D42C5 D43C5 D42C1 D42C3 PDF

    Untitled

    Abstract: No abstract text available
    Text: TP0202K New Product Vishay Siliconix P-Channel 30-V D-S MOSFET -3 0 * iK > ’ PRODUCT SUMMARY V (B R )D S S ( m ln ) (V ) < r D S (o n ) (f ì ) VGS(th)(V) lD (mA) 1.4 @ V q s = - 1 0 V -1 .3 t o -3 .0 -3 8 5 3.5 @ V G s = - 4 - 5 V -1 .3 t o -3 .0 -2 4 0


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    TP0202K 16-Jul-01 S-04279-- PDF

    2N6121

    Abstract: No abstract text available
    Text: • 7^E^S37 □ D S ci 3 ô ci fi ■ 3 3 H \ f Z 7 SGS-THOMSON 2N6121/22/23 ^ 7 # IM@[M [i[L[i@¥E»nûS_ 2N6124/25/26 S G S - THOMS ON 3 PE » MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS DESCRIPTIO N The 2N6121, 2N6122 and 2N6123 are silicon epi­


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    2N6121/22/23 2N6124/25/26 2N6121, 2N6122 2N6123 O-220 2N6124, 2N6125 2N6121/22/23/24/25/26 2N6121 PDF

    2N3553

    Abstract: 2N3375 WE VQE 23 F 2n3632 transistor 2n3553 2N3553 NPN philips 1968 philips 1969 philips TRANSISTORS 1968 WE VQE 11 E
    Text: 41E D • IPHIN 711Qö2b 00EÖ033 1 2N3375 2N3553 2N3632 PHILIPS INTERNATIONAL T - 3 3 - 0 < ? SILICON EPITAXIAL PLANAR OVERLAY TRANSISTORS The 2N3553 is an n-p-n overlay transistor in a TO-39 metai envelope with the col lector connected to the case. The 2N3375 and the 2N3632 are n-p-n overlay transistors In T 0 -6 0 metal envelopes with the electrodes


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    2n3375 2n3553 2n3632 2N3632 T0-60 WE VQE 23 F transistor 2n3553 2N3553 NPN philips 1968 philips 1969 philips TRANSISTORS 1968 WE VQE 11 E PDF

    MRF245

    Abstract: PT8828 BFY70 J0303 CM-501 sd1238 2N6096 RF Transistor S10-12 2N4932 BLY94
    Text: 960. 1215 MHz class C pulse for DME/IFF/TACAN transistors pour applications D M E /IFF/TAC A N puisées, classe C TYPE PACKAGE CONFIG. V cc V SD 1528 .280 4L STU D (A) S D 1528-1 .280 4LSL (A) S D 1528-8 .250 2LFL HERM SD 1530 .280 4L STU D (A) SD 1530-1


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    CB-403) CB-410) CB-303) CB-4111 CB-306) CB-407) 1CB-404) CB-408) CB-409) 52N6082 MRF245 PT8828 BFY70 J0303 CM-501 sd1238 2N6096 RF Transistor S10-12 2N4932 BLY94 PDF

    Untitled

    Abstract: No abstract text available
    Text: National Semiconductor T - 75- 45-07 DS75128/DS75129 Eight-Channel Line Receivers General Description Features The DS75128 and DS75129 are eight-channel line receiv­ ers designed to satisfy the requirements of the input-output interface specification for IBM 360/370. Both devices fea­


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    00bS33T DS75128/DS75129 DS75128 DS75129 DS7S12B DS7S128 DS75128/DS75129 1N3064 PDF

    H270

    Abstract: KU ll 14a IRFI460 IRFI460D IRFI460U SS452
    Text: Data Sheet No. PD-9.818 I N T E R N A T I O N A L R E C T I F I E R I R REPETITIVE AVALANCHE RATED AND dv/dt RATED HEXFET TRANSISTOR IRFI460 N -C H A N N E L 500 Volt, 0.27 Ohm HEXFET Product Summary The HEXFET® technology is the key to International


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    IRFI460D IRFI460U O-259 MIL-S-19500 SSM52 H270 KU ll 14a IRFI460 IRFI460D IRFI460U SS452 PDF