bolometer sensor
Abstract: PHOTODIODE current voltage amplifier array Infrared-Sensor working circuit schematic color sensor FillFactory fuga light sensor abstract SMALL ELECTRONICS PROJECTS electrical engineering projects bolometer sensor data sheet line follower sensor
Text: 1146 IEEE JOURNAL OF SOLID-STATE CIRCUITS, VOL. 35, NO. 8, AUGUST 2000 A Logarithmic Response CMOS Image Sensor with On-Chip Calibration Spyros Kavadias, Member, IEEE, Bart Dierickx, Danny Scheffer, Andre Alaerts, Dirk Uwaerts, and Jan Bogaerts Abstract—CMOS image sensors with logarithmic response are
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transistor y1
Abstract: aes 1136 detecteur magnetique Schmersal capteur de position 1146 transistors AES1145
Text: Montage- und Anschlussanleitung / Sicherheitsbaustein Mounting and wiring instructions / Safety monitoring module Instructions de montage et de câblage / Module de sécurité deutsch Bestimmung und Gebrauch Die Sicherheitsbausteine, zum Einsatz in Sicherheitsstromkreisen,
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tag 9205
Abstract: 800MHz CDMA Handset Circuit Diagram Wireless landline handset circuit diagram qualcomm 7200 msm7* qualcomm TAG 9202 800MHz CDMA Handset complete Circuit Diagram Umbilical cord MCI 9201 ERICSSON BML
Text: WHITE PAPER O K I T E L E C O M P R O D U C T S Technology Directions for Personal Communications Systems October 1995 ––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––– • Introduction ■
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1-800-OKI-6388
tag 9205
800MHz CDMA Handset Circuit Diagram
Wireless landline handset circuit diagram
qualcomm 7200
msm7* qualcomm
TAG 9202
800MHz CDMA Handset complete Circuit Diagram
Umbilical cord
MCI 9201
ERICSSON BML
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rede
Abstract: AN1146 X4C105
Text: X4C105 NOVRAM Features and Applications Application Note April 21, 2005 AN1146.0 Author: Peter Chan Introduction Have you ever experienced a power failure during a “save to disk” operation, then wondered, “Is my file saved correctly?” Have you had the need to track a critical process where a power glitch can cause the loss of status
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X4C105
AN1146
rede
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A8A Transistor
Abstract: SOT-23 marking a8x transistor A8J SOT-23 A8A A8A Transistor sot23
Text: MMUN2211LT1 Series Preferred Devices Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT Bias Resistor
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MMUN2211LT1
OT-23
COLT-23
OT-23
A8A Transistor
SOT-23 marking a8x
transistor A8J
SOT-23 A8A
A8A Transistor sot23
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Untitled
Abstract: No abstract text available
Text: MCP6541/1R/1U/2/3/4 Push-Pull Output Sub-Microamp Comparators Features: Description: • • • • The Microchip Technology Inc. MCP6541/1R/1U/2/3/4 family of comparators is offered in single MCP6541, MCP6541R, MCP6541U , single with Chip Select (CS) (MCP6543), dual (MCP6542) and quad (MCP6544)
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MCP6541/1R/1U/2/3/4
MCP6541,
MCP6541R,
MCP6541U)
MCP6543)
MCP6542)
MCP6544)
DS21696H-page
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VINA24
Abstract: Linear Technology mark code lt e3
Text: MCP6541/1R/1U/2/3/4 Push-Pull Output Sub-Microamp Comparators Features: Description: • • • • The Microchip Technology Inc. MCP6541/1R/1U/2/3/4 family of comparators is offered in single MCP6541, MCP6541R, MCP6541U , single with Chip Select (CS) (MCP6543), dual (MCP6542) and quad (MCP6544)
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MCP6541/1R/1U/2/3/4
MCP6541,
MCP6541R,
MCP6541U)
MCP6543)
MCP6542)
MCP6544)
OT-23-5,
SC-70-5
VINA24
Linear Technology mark code lt e3
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buz 350 equivalent
Abstract: BUP 203 transistor buz 36 BUP 312 BUP 304 leistungstransistoren bup 401 datasheet transistor buz 350 bup 213 BUP 309
Text: Typenübersicht Selection Guide • Leistungstransistoren Forts. ■ Typ VDS ■ Type V 50 50 60 50 50 60 50 50 50 50 100 100 100 100 200 200 200 200 500 500 500 1000 1000 1000 1000 400 400 400 60 60 50 50 50 ■ BUZ 10 ■ BUZ 10L ■ BUZ 10S2 ■ BUZ 11
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O-220
O-218
buz 350 equivalent
BUP 203
transistor buz 36
BUP 312
BUP 304
leistungstransistoren
bup 401 datasheet
transistor buz 350
bup 213
BUP 309
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HP 8510
Abstract: rf up converter PC8109
Text: Application Note Usage and Application of µPC8106 and µPC8109 2.0-GHz Silicon Frequency Up Converter ICs for Mobile Communications Document No. P13683EJ1V0AN00 1st edition Date Published January 1999 N CP(K) 1999 Printed in Japan [MEMO] 2 The information in this document will be updated without notice.
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PC8106
PC8109
P13683EJ1V0AN00
any88-6130
HP 8510
rf up converter
PC8109
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6lfl
Abstract: SD 1496 transistor sd1145 1135 sd 1144 XO 18 .230 6lfl TO-117SL
Text: SGS-THOMSON TELECOM AND DATA COMMUNICATIONS M3 ©[I[LIl g'ir®@R!lö(gi RF & MICROWAVE TRANSISTORS TO-39 TO-11TSL .280 4L SL (B XO-72 SL 450 . 512 MHz Package Type Config. CLASS C FOR MOBILE APPLICATIONS VCc (V) Pqut mm (W) SD 1132-4 SD 1115-2 SD 1482
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O-11TSL
XO-72
O-117SL
6lfl
SD 1496 transistor
sd1145
1135
sd 1144
XO 18
.230 6lfl
TO-117SL
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Untitled
Abstract: No abstract text available
Text: Tem ic TN3012L S e m i c o n d u c t o r s N-Channel Enhancement-Mode MOSFET Transistors Product Summary V BR DSS M in (V) r DS<on) M a x (Q ) ^GSrth) (V) I d (A) 0.8 to 3 0.18 12@ V GS= 1 0 V 300 20 @ VGS * 4.5 V Features Benefits • • • • • •
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TN3012L
-226A
P-37409--Rev.
04-Jul-94
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2SC2719
Abstract: 2sc2720 2sc2681 CRM 1150 138D 2SA1133 2SC2660 2SC2710 2SC2716 HJR 7 200
Text: 5 - - FOR USE BY ELECTRICIANS OVERSEAS : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English
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2SC2719
255nS
225nS
2SC2720
540nS
490nS
2SC2721
200/unit.
2sc2681
CRM 1150
138D
2SA1133
2SC2660
2SC2710
2SC2716
HJR 7 200
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Untitled
Abstract: No abstract text available
Text: T em ic TP1220L, TP/VP2020L, BSS92_ sì„conix P-Channel Enhancement-Mode MOS Transistors Product Summary P art N um ber V BR DSS M in (V) r DS(on) M ax (£2) VGS(lh) (V) I d (A) TP1220L -1 2 0 20 @ V GS = -4 .5 V —1 to -2 .4 -0 .1 2 TP2020L -2 0 0
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TP1220L,
TP/VP2020L,
BSS92_
TP1220L
TP2020L
VP2020L
BSS92
P-37994--
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2SC1123
Abstract: 138D
Text: 5 - - FOR U SE BY E L E C T R IC IA N S O V E R S E A S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English
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D43C8
Abstract: D43C5 D43C7 D43C9 D43C D42C D43C10 D43C11 D43C2 D43C3
Text: Silicon Power Tab @ 1 2 1 • S D43C Transistors “ Color M olded" The General Electric D43C is a green, silicone plastic encapsulated, power transistor designed for various specific and general purpose applications, such as: output and driver stages of amplifiers operating at frequencies
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diode j3x
Abstract: D67DE5 D67DE 400-500 D67DE6 D67DE7 D67DE ZN442 k 518
Text: HIGH SPEED NPN POWER DARLINGTON TRANSISTORS The General Electric D67DE is a high current power darlington. It features collector isolation from the heat sink, an internal construction designed for stress-free operation at temperature extremes, hefty screw terminals for emitter and
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D67DE5
D67DE
diode j3x
D67DE 400-500
D67DE6
D67DE7
ZN442
k 518
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9033 transistor
Abstract: PT8828 2N4932 PT8740 BLW27 BLX66 sd1315 BLY94 MM1669 PT8811
Text: 0.75. 4.2 GHz microwave transistors for class C operation O transistors hyperfréquences, classe C TYPE TH 1002 TH 1005 TH 1010 TH 2001 TH 2003 TH 2005 TH 2302 TH 2304 TH 2307 TH 3000 TH 3001 TH 3003 TH 3005 TH 4200 TH 4201 2 IM 4428 2N 4429 2N 4430 2N 4431
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302N6082
BM80-12
SD1416
MM1601
MRF631
SD1144
PT8549
SD1214
N5054
2N3553
9033 transistor
PT8828
2N4932
PT8740
BLW27
BLX66
sd1315
BLY94
MM1669
PT8811
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ge d43c5
Abstract: D43C8 D43C3 D43C2 d42c8 D42C5 D43C5 D42C1 D42C2 D42C3
Text: SILICON POWER TRANSISTORS C O M PL E M E NT A RY - 3 A MPE RE S G IE T y p e PN P NPN Pt T c = 2 5 °C W D 42C 1 - 1 2 .5 v CEO M in . (V ) 30 h F'E •c 200m A C o n t. @ I V , (A i ■ M in . M ax. 3 .0 25 - h FE @ 1 V , 1A COM M ENTS Package Type M in .
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200mA
D42C1
D43C1
D42C2
D43C2
D42C3
D43C3
D42C4
D43C4
D42C5
ge d43c5
D43C8
d42c8
D42C5
D43C5
D42C1
D42C3
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Untitled
Abstract: No abstract text available
Text: TP0202K New Product Vishay Siliconix P-Channel 30-V D-S MOSFET -3 0 * iK > ’ PRODUCT SUMMARY V (B R )D S S ( m ln ) (V ) < r D S (o n ) (f ì ) VGS(th)(V) lD (mA) 1.4 @ V q s = - 1 0 V -1 .3 t o -3 .0 -3 8 5 3.5 @ V G s = - 4 - 5 V -1 .3 t o -3 .0 -2 4 0
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TP0202K
16-Jul-01
S-04279--
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2N6121
Abstract: No abstract text available
Text: • 7^E^S37 □ D S ci 3 ô ci fi ■ 3 3 H \ f Z 7 SGS-THOMSON 2N6121/22/23 ^ 7 # IM@[M [i[L[i@¥E»nûS_ 2N6124/25/26 S G S - THOMS ON 3 PE » MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS DESCRIPTIO N The 2N6121, 2N6122 and 2N6123 are silicon epi
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2N6121/22/23
2N6124/25/26
2N6121,
2N6122
2N6123
O-220
2N6124,
2N6125
2N6121/22/23/24/25/26
2N6121
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2N3553
Abstract: 2N3375 WE VQE 23 F 2n3632 transistor 2n3553 2N3553 NPN philips 1968 philips 1969 philips TRANSISTORS 1968 WE VQE 11 E
Text: 41E D • IPHIN 711Qö2b 00EÖ033 1 2N3375 2N3553 2N3632 PHILIPS INTERNATIONAL T - 3 3 - 0 < ? SILICON EPITAXIAL PLANAR OVERLAY TRANSISTORS The 2N3553 is an n-p-n overlay transistor in a TO-39 metai envelope with the col lector connected to the case. The 2N3375 and the 2N3632 are n-p-n overlay transistors In T 0 -6 0 metal envelopes with the electrodes
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2n3375
2n3553
2n3632
2N3632
T0-60
WE VQE 23 F
transistor 2n3553
2N3553 NPN
philips 1968
philips 1969
philips TRANSISTORS 1968
WE VQE 11 E
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MRF245
Abstract: PT8828 BFY70 J0303 CM-501 sd1238 2N6096 RF Transistor S10-12 2N4932 BLY94
Text: 960. 1215 MHz class C pulse for DME/IFF/TACAN transistors pour applications D M E /IFF/TAC A N puisées, classe C TYPE PACKAGE CONFIG. V cc V SD 1528 .280 4L STU D (A) S D 1528-1 .280 4LSL (A) S D 1528-8 .250 2LFL HERM SD 1530 .280 4L STU D (A) SD 1530-1
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CB-403)
CB-410)
CB-303)
CB-4111
CB-306)
CB-407)
1CB-404)
CB-408)
CB-409)
52N6082
MRF245
PT8828
BFY70
J0303
CM-501
sd1238
2N6096
RF Transistor S10-12
2N4932
BLY94
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Untitled
Abstract: No abstract text available
Text: National Semiconductor T - 75- 45-07 DS75128/DS75129 Eight-Channel Line Receivers General Description Features The DS75128 and DS75129 are eight-channel line receiv ers designed to satisfy the requirements of the input-output interface specification for IBM 360/370. Both devices fea
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00bS33T
DS75128/DS75129
DS75128
DS75129
DS7S12B
DS7S128
DS75128/DS75129
1N3064
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H270
Abstract: KU ll 14a IRFI460 IRFI460D IRFI460U SS452
Text: Data Sheet No. PD-9.818 I N T E R N A T I O N A L R E C T I F I E R I R REPETITIVE AVALANCHE RATED AND dv/dt RATED HEXFET TRANSISTOR IRFI460 N -C H A N N E L 500 Volt, 0.27 Ohm HEXFET Product Summary The HEXFET® technology is the key to International
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IRFI460D
IRFI460U
O-259
MIL-S-19500
SSM52
H270
KU ll 14a
IRFI460
IRFI460D
IRFI460U
SS452
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