K7A161801M
Abstract: K7A163601M advh
Text: K7A163601M K7A161801M 512Kx36 & 1Mx18 Synchronous SRAM Document Title 512Kx36 & 1Mx18-Bit Synchronous Pipelined Burst SRAM Revision History Rev. No. History Draft Date Remark 0.0 Initial draft Jan. 18. 1999 Preliminary 0.1 1. Update ICC & ISB values. 2. Remove tCYC 117MHz -85
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K7A163601M
K7A161801M
512Kx36
1Mx18
1Mx18-Bit
117MHz
150mA
110mA
130mA
K7A161801M
K7A163601M
advh
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PCP1403-TD-H
Abstract: No abstract text available
Text: Ordering number : ENA2294A PCP1403 N-Channel Power MOSFET 60V, 4.5A, 117mΩ, Single PCP http://onsemi.com Features • On-resistance RDS on 1=92mΩ(typ.) • 4V drive • Protection Diode in • Halogen free compliance Specifications Absolute Maximum Ratings at Ta = 25°C
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ENA2294A
PCP1403
600mm2Ã
A2294-5/5
PCP1403-TD-H
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AP2304GN
Abstract: No abstract text available
Text: AP2304GN Pb Free Plating Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement ▼ Small package outline D ▼ Surface mount package BVDSS 25V RDS ON 117mΩ ID 2.7A S SOT-23 Description G The Advanced Power MOSFETs from APEC provide the
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AP2304GN
OT-23
100ms
270/W
Fig10.
AP2304GN
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Untitled
Abstract: No abstract text available
Text: 117MHz SAW Filter 10MHz Bandwidth China Electronics Technology Group Corporation No.26 Research Institute SIPAT Co., Ltd. N11703 Part Number:LB Number:LBN11703 www. sipatsaw.com Features � For IF SAW filter � High attenuation � Single-ended operation
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117MHz
10MHz
LBN11703
2002/95/EC)
10deg/Div
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G2304A
Abstract: No abstract text available
Text: Pb Free Plating Product ISSUED DATE :2005/03/21 REVISED DATE : G2304A N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS ON ID 30V 117m 2.5A Description The G2304A utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely
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G2304A
G2304A
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G2304
Abstract: No abstract text available
Text: Pb Free Plating Product CORPORATION G2304 N-CHANNEL ENHANCEMENT MODE POWER MOSFET ISSUED DATE :2004/10/12 REVISED DATE :2005/03/22B BVDSS RDS ON ID 25V 117m 2.7A Description The G2304 provides the designer with the best combination of fast switching, low on-resistance and
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G2304
2005/03/22B
G2304
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AP2304AGN
Abstract: No abstract text available
Text: AP2304AGN Pb Free Plating Product Advanced Power Electronics Corp. ▼ Simple Drive Requirement N-CHANNEL ENHANCEMENT MODE POWER MOSFET D ▼ Small Package Outline BVDSS 30V RDS ON 117mΩ ID ▼ Surface Mount Device 2.5A S SOT-23 G Description Advanced Power MOSFETs utilized advanced processing techniques
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AP2304AGN
OT-23
OT-23
100ms
AP2304AGN
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IDT71V632
Abstract: sram with address counter
Text: 64K x 32 3.3V Synchronous SRAM Pipelined Outputs Burst Counter, Single Cycle Deselect Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ with full support of the Pentium and PowerPC™ processor interfaces. The pipelined burst architecture provides cost-effective 3-1-1-1 secondary cache performance for processors up to 117MHz.
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117MHz.
IDT71V632
117MHz
100pinTQFP
x4033
sram with address counter
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AS8C801825
Abstract: AS8C803625 256K x 8 SRAM dip
Text: 256K X 36, 512K X 18 3.3V Synchronous SRAMs 3.3V I/O, Burst Counter Flow-Through Outputs, Single Cycle Deselect AS8C803625 AS8C801825 Features • • 256K x 36, 512K x 18 memory configuration Supports fast access times: - 7.5ns up to 117MHz clock frequency
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AS8C803625
AS8C801825
117MHz
100-pin
36/512K
100pin
AS8C801825
256K x 8 SRAM dip
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71V632
Abstract: IDT71V632
Text: 64K x 32 3.3V Synchronous SRAM Pipelined Outputs Burst Counter, Single Cycle Deselect Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ IDT71V632/Z with full support of the Pentium and PowerPC™ processor interfaces. The pipelined burst architecture provides cost-effective 3-1-1-1 secondary cache performance for processors up to 117MHz.
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IDT71V632/Z
117MHz.
IDT71V632
71V632
PK100-1)
71V632SA4PF
71V632S5PF
71V632S6PF
71V632S7PF
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data MOSFET SOT-23
Abstract: No abstract text available
Text: AP2304AGN-HF Halogen-Free Product Advanced Power Electronics Corp. ▼ Simple Drive Requirement N-CHANNEL ENHANCEMENT MODE POWER MOSFET D ▼ Small Package Outline BVDSS 30V RDS ON 117mΩ ID ▼ Surface Mount Device 2.5A S ▼ RoHS Compliant SOT-23 G Description
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AP2304AGN-HF
OT-23
100ms
data MOSFET SOT-23
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Untitled
Abstract: No abstract text available
Text: 64K x 32 3.3V Synchronous SRAM Pipelined Outputs Burst Counter, Single Cycle Deselect Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ IDT71V632 with full support of the Pentium and PowerPC™ processor interfaces. The pipelined burst architecture provides cost-effective 3-1-1-1 secondary cache performance for processors up to 117MHz.
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IDT71V632
MT58LC64K32D7LG-XX)
100-pin
117MHz
100pinTQFP
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Untitled
Abstract: No abstract text available
Text: OBSOLETE - PLEASE USE ZXTC6720MC ZXTDE4M832 MPPS Miniature Package Power Solutions DUAL 80V NPN & 70V PNP LOW SATURATION TRANSISTOR COMBINATION SUMMARY NPN Transistor PNP Transistor VCEO = 80V; RSAT = 68m ; C = 3.5A VCEO = -70V; RSAT = 117m ; C = -2.5A
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ZXTC6720MC
ZXTDE4M832
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117-601MR
Abstract: No abstract text available
Text: CURRENT TRANSFORMER Model 117MR APPLICATION: FREQUENCY: INSULATION LEVEL: CONTINUOUS THERMAL CURRENT RATING FACTOR: 600:5MR Model 117-601MR - rating C20
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117MR
117-601MR
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IDT71V632
Abstract: No abstract text available
Text: 64K x 32 3.3V Synchronous SRAM Pipelined Outputs Burst Counter, Single Cycle Deselect Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ IDT71V632 with full support of the Pentium and PowerPC™ processor interfaces. The pipelined burst architecture provides cost-effective 3-1-1-1 secondary cache performance for processors up to 117MHz.
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IDT71V632
117MHz.
IDT71V632
IDT71V632,
117MHz
x4033
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY SSRAM AS5SS128K32 128K x 32 4Mb Synchronous Flow-Through Static Ram FEATURES GENERAL DESCRIPTION • Available in Mil-Temp*, Enhanced & Industrial Ranges • Clock frequency up to 117MHz • Internal self-timed write cycle • Individual Byte Write Control and Global Write
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AS5SS128K32
117MHz
100-Pin
AS5SS128K32
-40oC
105oC
-55oC
125oC
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IDT71V632
Abstract: No abstract text available
Text: 64K x 32 3.3V Synchronous SRAM Pipelined Outputs Burst Counter, Single Cycle Deselect Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ IDT71V632/Z with full support of the Pentium and PowerPC™ processor interfaces. The pipelined burst architecture provides cost-effective 3-1-1-1 secondary cache performance for processors up to 117MHz.
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IDT71V632/Z
117MHz.
IDT71V632
117MHz
100pinTQFP
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AP2304AN
Abstract: N-CHANNEL MOSFET 30V 2A SOT-23
Text: AP2304AN Advanced Power Electronics Corp. ▼ Simple Drive Requirement N-CHANNEL ENHANCEMENT MODE POWER MOSFET D ▼ Small Package Outline BVDSS 30V RDS ON 117mΩ ID ▼ Surface Mount Device 2.5A S SOT-23 G Description Advanced Power MOSFETs utilized advanced processing techniques
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AP2304AN
OT-23
OT-23
100ms
AP2304AN
N-CHANNEL MOSFET 30V 2A SOT-23
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Untitled
Abstract: No abstract text available
Text: Ordering number : EN*A2294 PCP1403 Advance Information http://onsemi.com N-Channel Power MOSFET 60V, 4.5A, 117mΩ, Single PCP Features • On-resistance RDS on 1=92mΩ(typ.) • 4V drive • Protection Diode in • Halogen free compliance Specifications
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A2294
PCP1403
600mm2Ã
A2294-5/5
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Untitled
Abstract: No abstract text available
Text: 8 5 6 7 ECRN 13677 ECB 4/11/04 4.3 .17 2 3.23 2.97 .127 .117 D 1.00[25.4] MAX .65 [16.5] MIN 31.8 1.25 8.4 .33 1 25.40±0.38 1.000±.015 15.9 .63 RADIUS OR CHAMFER 12.8 .50 C SUGGESTED DIMENSIONS FOR MATING BLADE 19.10 .752 1 2 REV. 2 27 1.06 ECRN 14133: .117MIN/.127 MAX WAS .125 .002,
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117MIN/
PCL01
CADFILES/01902
114467S1
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Untitled
Abstract: No abstract text available
Text: PART NUMBER: 117MDCL900KFE# METALLIZED POLYPROPYLENE, ROUND TUBE CAPACITOR PARTS ARE ROHS COMPLIANT ELECTRICAL SPECIFICATIONS Capacitance: 110 uF Dissipation Factor: 0.0002 Max at 100 Hz and 25°C Temperature Coefficient: -200 PPM/°C : -100 PPM/°C , 100 PPM/°C
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OCR Scan
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117MDCL900KFE#
IL60712
847J-675-1760
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junction temperature v850
Abstract: No abstract text available
Text: Preliminary - April 1998 ¡il T t d l N O L O C V 2.5V or 3.3V I/O 117/100/90/50 GS840NBT18FT F eatures Output registers are provided and are controlled by FT mode pin. With FT mode pin, output registers can be programmed in either pipeline mode for very high frequency operation (117MHz or
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100-lead
junction temperature v850
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GS811V
Abstract: IQE3045
Text: in T f ( 4 1 N 0 LOCI G S 811V 32Q /T GS811V32Q/T Q O tf v OO D u v e t* 80-117MHz(P/L) 2.5V_ O fcl\ X O C . DU I O I_ 66MHz(FT) Features • • • • • • • Single 3.3V +5%/-5% power supply Separate VDDQ to allow 2.375V to 3.465V output supply level
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GS811V
32Q/T
80-117MHz
66MHz
117MHz
IQE3045
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PDF
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CD73
Abstract: No abstract text available
Text: Preliminary - February 98 CU l i tu H0LOCV 2.5V or 3.3V 64K x 64 Burst 117/100/83/75/66 Features • • • • • • • • • • • Single 3.3V +10%/-5% power supply 5-volt tolerant clock High frequency operation: 117MHz Fast access time: 4.5ns Clock to Q
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OCR Scan
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117MHz
128-lead
GS84064Q/T
GS84064
1023G45
CD73
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PDF
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