11A S81 Search Results

11A S81 Result Highlights (5)

Part	Manufacturer	Description
LBEE5XV2BZ-883	Murata Manufacturing Co Ltd	Shielded Small Wi-Fi® 11a/b/g/n/ac/ax 2x2 MIMO + Bluetooth® 5.2 Module - CCATS N/A(self classification)
LBEE5ZZ2XS-846	Murata Manufacturing Co Ltd	Shielded Small Wi-Fi® 11a/b/g/n/ac/ax 2x2 MIMO + Bluetooth® 5.3 Module - CCATS N/A(self classification)
UPA2754GR-E1-A	Renesas Electronics Corporation	Nch Dual Power Mosfet 30V 11A 14.5Mohm Power Sop8
UPA2706GR(0)-E1-A	Renesas Electronics Corporation	Nch Single Power Mosfet 30V 11A 15Mohm Power Sop8
UPA2706GR-E1-AT	Renesas Electronics Corporation	Nch Single Power Mosfet 30V 11A 15Mohm Power Sop8

11A S81 Price and Stock

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ABLIC Inc. S-817B11AMC-CWAT2U LDO Voltage Regulators 1.1V 1.2uA 2.0%
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	S-817B11AMC-CWAT2U		3,000			1 $0.99 10 $0.879 100 $0.686 1000 $0.447 10000 $0.381	Buy Now
ABLIC Inc. S-817B11AY-Z2-U LDO Voltage Regulators VOLTAGE REGULATOR
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	S-817B11AY-Z2-U		1,810			1 $0.86 10 $0.747 100 $0.573 1000 $0.362 10000 $0.294	Buy Now
APEM Inc DPS8111AK2 Thumbwheel Switches & Pushwheel Switches 1A 40VAC 40VDC Decimal
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	DPS8111AK2					1 $20.46 10 $18.4 100 $17.42 1000 $17.42 10000 $17.42	Get Quote
ABLIC Inc. S-817B11AY-B2-U LDO Voltage Regulators 1.1V 1.2uA 2.0%
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	S-817B11AY-B2-U					1 $0.86 10 $0.747 100 $0.573 1000 $0.402 10000 $0.364	Get Quote
ABLIC Inc. S-817B11AUA-CWAT2U LDO Voltage Regulators 1.1V 1.2uA 2.0%
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	S-817B11AUA-CWAT2U					1 $0.86 10 $0.769 100 $0.62 1000 $0.439 10000 $0.381	Get Quote

Find more 11A S81 price and stock on Findchips.com

11A S81 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
IRFB11N50A Abstract: SiHFB11N50A SiHFB11N50A-E3 Text: IRFB11N50A, SiHFB11N50A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and current	Original	IRFB11N50A, SiHFB11N50A O-220 18-Jul-08 IRFB11N50A SiHFB11N50A-E3	PDF
Untitled Abstract: No abstract text available Text: IRFB11N50A, SiHFB11N50A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and current	Original	IRFB11N50A, SiHFB11N50A O-220 12-Mar-07	PDF
Untitled Abstract: No abstract text available Text: IRFP26N60L, SiHFP26N60L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Superfast Body Diode Eliminates the Need for External Diodes in ZVS Applications 600 RDS(on) (Ω) VGS = 10 V 0.21 Qg (Max.) (nC) 180 Qgs (nC) 61 Qgd (nC) Requirements	Original	IRFP26N60L, SiHFP26N60L O-247 12-Mar-07	PDF
17AB Abstract: No abstract text available Text: IRFPS29N60L, SiHFPS29N60L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Super Fast Body Diode Eliminates the Need for External Diodes in ZVS Applications 600 RDS(on) (Ω) VGS = 10 V 0.175 Qg (Max.) (nC) 220 Qgs (nC) 67 Qgd (nC) 96 Configuration	Original	IRFPS29N60L, SiHFPS29N60L SUPER-247TM 12-Mar-07 17AB	PDF
Untitled Abstract: No abstract text available Text: IRFP21N60L, SiHFP21N60L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Superfast Body Diode Eliminates the Need for External Diodes in ZVS Applications 600 RDS(on) (Ω) VGS = 10 V 0.27 Qg (Max.) (nC) 150 Qgs (nC) 46 Qgd (nC) 64 Configuration	Original	IRFP21N60L, SiHFP21N60L O-247 12-Mar-07	PDF
SiHFP21N60L Abstract: IRFP21N60L Text: IRFP21N60L, SiHFP21N60L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Superfast Body Diode Eliminates the Need for External Diodes in ZVS Applications 600 RDS(on) (Ω) VGS = 10 V 0.27 Qg (Max.) (nC) 150 Qgs (nC) 46 Qgd (nC) 64 Configuration	Original	IRFP21N60L, SiHFP21N60L O-247 18-Jul-08 IRFP21N60L	PDF
SiHFPS29N60L Abstract: ISD 1820 P dt-830 IRFPS29N60L SiHFPS29N60L-E3 Text: IRFPS29N60L, SiHFPS29N60L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Super Fast Body Diode Eliminates the Need for External Diodes in ZVS Applications 600 RDS(on) (Ω) VGS = 10 V 0.175 Qg (Max.) (nC) 220 Qgs (nC) 67 Qgd (nC) 96 Configuration	Original	IRFPS29N60L, SiHFPS29N60L SUPER-247TM 18-Jul-08 ISD 1820 P dt-830 IRFPS29N60L SiHFPS29N60L-E3	PDF
IRFP26N60 Abstract: IRFP26N60L SiHFP26N60L ktp12 Text: IRFP26N60L, SiHFP26N60L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Superfast Body Diode Eliminates the Need for External Diodes in ZVS Applications 600 RDS(on) (Ω) VGS = 10 V 0.21 Qg (Max.) (nC) 180 Qgs (nC) 61 Qgd (nC) Requirements	Original	IRFP26N60L, SiHFP26N60L O-247 18-Jul-08 IRFP26N60 IRFP26N60L ktp12	PDF
IRFP21N60L Abstract: SiHFP21N60L Text: IRFP21N60L, SiHFP21N60L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Superfast Body Diode Eliminates the Need for External Diodes in ZVS Applications 600 RDS(on) (Ω) VGS = 10 V 0.27 Qg (Max.) (nC) 150 Qgs (nC) 46 Qgd (nC) 64 Configuration	Original	IRFP21N60L, SiHFP21N60L O-247 18-Jul-08 IRFP21N60L	PDF
Untitled Abstract: No abstract text available Text: IRFP21N60L, SiHFP21N60L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Superfast Body Diode Eliminates the Need for External Diodes in ZVS Applications 600 RDS(on) () VGS = 10 V 0.27 Qg (Max.) (nC) 150 Qgs (nC) 46 Qgd (nC) 64 Configuration	Original	IRFP21N60L, SiHFP21N60L 2002/95/EC O-247AC 11-Mar-11	PDF
Untitled Abstract: No abstract text available Text: IRFP26N60L, SiHFP26N60L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Superfast Body Diode Eliminates the Need for External Diodes in ZVS Applications 600 RDS(on) () VGS = 10 V 0.21 Qg (Max.) (nC) 180 Qgs (nC) 61 Qgd (nC) Requirements	Original	IRFP26N60L, SiHFP26N60L 2002/95/EC O-247AC 11-Mar-11	PDF
s8192 Abstract: No abstract text available Text: IRFP21N60L, SiHFP21N60L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Superfast Body Diode Eliminates the Need for External Diodes in ZVS Applications 600 RDS(on) () VGS = 10 V 0.27 Qg (Max.) (nC) 150 Qgs (nC) 46 Qgd (nC) 64 Configuration	Original	IRFP21N60L, SiHFP21N60L 2002/95/EC O-247AC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 s8192	PDF
Untitled Abstract: No abstract text available Text: IRFP26N60L, SiHFP26N60L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Superfast Body Diode Eliminates the Need for External Diodes in ZVS Applications 600 RDS(on) () VGS = 10 V 0.21 Qg (Max.) (nC) 180 Qgs (nC) 61 Qgd (nC) Requirements	Original	IRFP26N60L, SiHFP26N60L 2002/95/EC O-247AC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12	PDF
irfd9020 Abstract: No abstract text available Text: IRFD9020, SiHFD9020 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Dynamic dv/dt Rating VDS V - 60 RDS(on) (Ω) VGS = - 10 V Qg (Max.) (nC) 19 Qgs (nC) 5.4 Qgd (nC) 11 Configuration • Repetitive Avalanche Rated 0.28 Available RoHS* • For Automatic Insertion	Original	IRFD9020, SiHFD9020 18-Jul-08 irfd9020	PDF

MS1022 Abstract: No abstract text available Text: IRFP460, SiHFP460 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 500 RDS(on) (Ω) VGS = 10 V • Repetitive Avalanche Rated 0.27 Available Qg (Max.) (nC) 210 • Isolated Central Mounting Hole Qgs (nC) 29 • Fast Switching	Original	IRFP460, SiHFP460 O-247 O-247 12-Mar-07 MS1022	PDF
IRFP460 Abstract: irfp460pbf IRFP460 application irfp460 datasheet SiHFP460 irfp460 mosfet Text: IRFP460, SiHFP460 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 500 RDS(on) (Ω) VGS = 10 V • Repetitive Avalanche Rated 0.27 Available Qg (Max.) (nC) 210 • Isolated Central Mounting Hole Qgs (nC) 29 • Fast Switching	Original	IRFP460, SiHFP460 O-247 O-247 18-Jul-08 IRFP460 irfp460pbf IRFP460 application irfp460 datasheet irfp460 mosfet	PDF
IRFP23N50L Abstract: SiHFP23N50L 91209 irfp23n50 Text: IRFP23N50L, SiHFP23N50L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Superfast Body Diode Eliminates the Need for External Diodes in ZVS Applications 500 RDS(on) (Ω) VGS = 10 V 0.190 Qg (Max.) (nC) 150 Qgs (nC) 44 Qgd (nC) 72 Configuration	Original	IRFP23N50L, SiHFP23N50L O-247 18-Jul-08 IRFP23N50L 91209 irfp23n50	PDF
Untitled Abstract: No abstract text available Text: IRFP23N50L, SiHFP23N50L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Superfast Body Diode Eliminates the Need for External Diodes in ZVS Applications 500 RDS(on) (Ω) VGS = 10 V 0.190 Qg (Max.) (nC) 150 Qgs (nC) 44 Qgd (nC) 72 Configuration	Original	IRFP23N50L, SiHFP23N50L O-247 12-Mar-07	PDF
IRFP460 application Abstract: IRFP460PBF irfp460 mosfet IRFP460 SiHFP460 siliconix irfp460 MJ 2400 irfp460 i SILICONIX MARKING IRFP460 irfp460 siliconix Text: IRFP460, SiHFP460 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 500 RDS(on) (Ω) VGS = 10 V • Repetitive Avalanche Rated 0.27 Available Qg (Max.) (nC) 210 • Isolated Central Mounting Hole Qgs (nC) 29 • Fast Switching	Original	IRFP460, SiHFP460 O-247 O-247 11-Mar-11 IRFP460 application IRFP460PBF irfp460 mosfet IRFP460 siliconix irfp460 MJ 2400 irfp460 i SILICONIX MARKING IRFP460 irfp460 siliconix	PDF
SIHG20N50C Abstract: No abstract text available Text: SiHG20N50C Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Halogen-free According to IEC 61249-2-21 Definition • Low Figure-of-Merit Ron x Qg • 100 % Avalanche Tested • High Peak Current Capability • dV/dt Ruggedness • Improved Trr/Qrr	Original	SiHG20N50C O-247AC 2002/95/EC O-247AC SiHG20N50C-E3 SiHG20N50C-GE3 11-Mar-11	PDF
Untitled Abstract: No abstract text available Text: SiHG22N60S www.vishay.com Vishay Siliconix S Series Power MOSFET FEATURES PRODUCT SUMMARY VDS at TJ max. V • Generation One • Halogen-free According to IEC 61249-2-21 Definition • High EAR Capability • Lower Figure-of-Merit Ron x Qg • 100 % Avalanche Tested	Original	SiHG22N60S O-247AC 2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12	PDF
SIHG20N50C Abstract: No abstract text available Text: SiHG20N50C Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Halogen-free According to IEC 61249-2-21 Definition • Low Figure-of-Merit Ron x Qg • 100 % Avalanche Tested • High Peak Current Capability • dV/dt Ruggedness • Improved Trr/Qrr	Original	SiHG20N50C O-247AC 2002/95/EC O-247AC SiHG20N50C-E3 SiHG20N50C-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU.	PDF
Untitled Abstract: No abstract text available Text: IRFP460, SiHFP460 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 500 RDS(on) (Ω) VGS = 10 V • Repetitive Avalanche Rated 0.27 Available Qg (Max.) (nC) 210 • Isolated Central Mounting Hole Qgs (nC) 29 • Fast Switching	Original	IRFP460, SiHFP460 O-247 O-247 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
203A14 Abstract: bcr12 PD4361 19A6 11a s81 uPD4361B Text: JJPD4361B 65,536 X 1-bit Static CMOS RAM L ~ Æ lé \ * NEC Electronics Inc. Description Pin Configurations The /JPD4361B is a 65,536-word by 1-bit static RAM fab ric a te d w ith advanced silicon-gate technology. CM O S peripheral circuits and N-channel m em ory cells	OCR Scan	uPD4361B /JPD4361B 536-word 22-pin 24-pin PD4361B 203A14 bcr12 PD4361 19A6 11a s81	PDF

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11A S81 Search Results

11A S81 Result Highlights (5)

11A S81 Price and Stock

ABLIC Inc. S-817B11AMC-CWAT2U

ABLIC Inc. S-817B11AY-Z2-U

APEM Inc DPS8111AK2

ABLIC Inc. S-817B11AY-B2-U

ABLIC Inc. S-817B11AUA-CWAT2U

11A S81 Datasheets Context Search

IRFB11N50A

Untitled

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17AB

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SiHFP21N60L

SiHFPS29N60L

IRFP26N60

IRFP21N60L

Untitled

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s8192

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irfd9020

MS1022

IRFP460

IRFP23N50L

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IRFP460 application

SIHG20N50C

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SIHG20N50C

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203A14