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    S8192 Search Results

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    SiT8208AC-21-18S-8.192000 SiTime 1 to 80 MHz, ±10 to ±50 ppm Oscillator Datasheet
    SiT8208AC-21-25S-8.192000 SiTime 1 to 80 MHz, ±10 to ±50 ppm Oscillator Datasheet
    SiT8208AC-21-28S-8.192000 SiTime 1 to 80 MHz, ±10 to ±50 ppm Oscillator Datasheet
    SiT8208AC-23-18S-8.192000 SiTime 1 to 80 MHz, ±10 to ±50 ppm Oscillator Datasheet
    SiT8208AC-2F-25S-8.192000 SiTime 1 to 80 MHz, ±10 to ±50 ppm Oscillator Datasheet
    SF Impression Pixel

    S8192 Price and Stock

    ECS International Inc ECS-81.92-12-30Q-EN-TR

    CRYSTAL 8.1920MHZ 12PF SMD
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    DigiKey ECS-81.92-12-30Q-EN-TR Reel 21,000 1,000
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    New Advantage Corporation ECS-81.92-12-30Q-EN-TR 5,000 1
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    Abracon Corporation ABLS-8.192MHZ-B2-T

    CRYSTAL 8.1920MHZ 18PF SMD
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    DigiKey ABLS-8.192MHZ-B2-T Reel 20,000 1,000
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    ABLS-8.192MHZ-B2-T Cut Tape 127 1
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    ABLS-8.192MHZ-B2-T Reel 1,000
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    TME ABLS-8.192MHZ-B2-T 2,000 1,000
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    Avnet Abacus ABLS-8.192MHZ-B2-T Reel 12 Weeks 1,000
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    Master Electronics ABLS-8.192MHZ-B2-T 4,000
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    ECS International Inc ECS-81.92-18-7SX-TR

    CRYSTAL 8.1920MHZ 18PF SMD
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    DigiKey ECS-81.92-18-7SX-TR Reel 5,000 1,000
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    ECS-81.92-18-7SX-TR Cut Tape 420 1
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    Abracon Corporation ABLS-8.192MHZ-K4T

    CRYSTAL 8.1920MHZ 18PF SMD
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    DigiKey ABLS-8.192MHZ-K4T Cut Tape 1,031 1
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    ABLS-8.192MHZ-K4T Cut Tape 3 1
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    ECS International Inc ECS-81.92-18-5PLX-AGN-TR

    CRYSTAL 8.1920MHZ 18PF SMD
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    DigiKey ECS-81.92-18-5PLX-AGN-TR Reel 1,000 1,000
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    Master Electronics ECS-81.92-18-5PLX-AGN-TR
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    S8192 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: IRFPC40, SiHFPC40 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 600 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 60 Qgs (nC) 8.3 Qgd (nC) 30 Configuration • Isolated Central Mounting Hole COMPLIANT • Ease of Paralleling


    Original     		PDF IRFPC40, SiHFPC40 2002/95/EC O-247AC O-247AC O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU.

    Untitled

    Abstract: No abstract text available
    Text: IRFPE40, SiHFPE40 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 800 RDS(on) (Ω) VGS = 10 V Available • Repetitive Avalanche Rated 2.0 Qg (Max.) (nC) 130 • Isolated Central Mounting Hole Qgs (nC) 17 • Fast Switching


    Original     		PDF IRFPE40, SiHFPE40 2002/95/EC O-247AC O-247AC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    mosfet k 2038

    Abstract: IRFP450A
    Text: IRFP450A, SiHFP450A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 500 RDS(on) (Ω) VGS = 10 V 0.40 Qg (Max.) (nC) 64 Qgs (nC) 16 Qgd (nC) • Improved Gate, Avalanche and Dynamic dV/dt


    Original     		PDF IRFP450A, SiHFP450A O-247 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 mosfet k 2038 IRFP450A

    Untitled

    Abstract: No abstract text available
    Text: IRFP450LC, SiHFP450LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 500 RDS(on) (Ω) VGS = 10 V 0.40 Qg (Max.) (nC) 74 Qgs (nC) 19 Qgd (nC) 35 Configuration Single D Ultra Low Gate Charge Reduced Gate Drive Requirement


    Original     		PDF IRFP450LC, SiHFP450LC O-247 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: IRFPE50, SiHFPE50 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 800 RDS(on) (Ω) VGS = 10 V • Repetitive Avalanche Rated 1.2 Qg (Max.) (nC) 200 • Isolated Central Mounting Hole Qgs (nC) 24 • Fast Switching 110


    Original     		PDF IRFPE50, SiHFPE50 2002/95/EC O-247AC O-247AC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    si7164

    Abstract: Si7164DP
    Text: SPICE Device Model Si7164DP Vishay Siliconix N-Channel 60-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range


    Original     		PDF Si7164DP 18-Jul-08 si7164

    SIHG20N50C

    Abstract: No abstract text available
    Text: SiHG20N50C Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Halogen-free According to IEC 61249-2-21 Definition • Low Figure-of-Merit Ron x Qg • 100 % Avalanche Tested • High Peak Current Capability • dV/dt Ruggedness • Improved Trr/Qrr


    Original     		PDF SiHG20N50C O-247AC 2002/95/EC O-247AC SiHG20N50C-E3 SiHG20N50C-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU.

    irfp27n60k

    Abstract: No abstract text available
    Text: IRFP27N60K, SiHFP27N60K Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 600 RDS(on) () VGS = 10 V 0.18 Qg (Max.) (nC) 180 Qgs (nC) 56 Qgd (nC) 86 Configuration • Improved Gate, Avalanche and Dynamic dV/dt


    Original     		PDF IRFP27N60K, SiHFP27N60K 2002/95/EC O-247AC 11-Mar-11 irfp27n60k

    Untitled

    Abstract: No abstract text available
    Text: IRFPC50, SiHFPC50 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 600 RDS(on) (Ω) VGS = 10 V 0.60 Qg (Max.) (nC) 140 Qgs (nC) 20 Qgd (nC) 69 Configuration Single D Available RoHS* COMPLIANT DESCRIPTION TO-247AC Third generation Power MOSFETs from Vishay provide the


    Original     		PDF IRFPC50, SiHFPC50 2002/95/EC O-247AC O-247AC O-22hay 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: SiHG24N65E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Generation Two • Low Figure-of-Merit (FOM) Ron x Qg 700 RDS(on) max. at 25 °C () VGS = 10 V 0.145 Qg max. (nC) 122 Qgs (nC) 21 Qgd (nC) •


    Original     		PDF SiHG24N65E 2002/95/EC O-247AC 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: IRFP254, SiHFP254 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 250 RDS(on) (Ω) VGS = 10 V 0.14 Qg (Max.) (nC) 140 Qgs (nC) 24 Qgd (nC) 71 Configuration Single Dynamic dV/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole


    Original     		PDF IRFP254, SiHFP254 2002/95/EC O-247AC O-247AC O-22hay 11-Mar-11

    SIHG22N60E

    Abstract: No abstract text available
    Text: SiHG22N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Halogen-free According to IEC 61249-2-21 Definition • Low Figure-of-Merit (FOM) Ron x Qg • Low Input Capacitance (Ciss) • Reduced Switching and Conduction Losses


    Original     		PDF SiHG22N60E O-247AC 2002/95/EC 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: SiHG24N65E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low Figure-of-Merit (FOM) Ron x Qg 700 RDS(on) max. at 25 °C () VGS = 10 V Qg max. (nC) 122 Qgs (nC) 21 Qgd (nC) • • • • • 0.145


    Original     		PDF SiHG24N65E 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Si7164DP

    Abstract: No abstract text available
    Text: SPICE Device Model Si7164DP Vishay Siliconix N-Channel 60-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range


    Original     		PDF Si7164DP S-81929-Rev. 25-Aug-08

    SiHG14N50D

    Abstract: No abstract text available
    Text: SiHG14N50D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) - Reduced Capacitive Switching Losses - High Body Diode Ruggedness


    Original     		PDF SiHG14N50D O-247AC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: IRFP17N50L, SiHFP17N50L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • SuperFast Body Diode Eliminates the Need For External Diodes in ZVS Applications 500 RDS(on) (Ω) VGS = 10 V 0.28 Qg (Max.) (nC) 130 Qgs (nC) 33 Qgd (nC) 59 Configuration


    Original     		PDF IRFP17N50L, SiHFP17N50L 2002/95/EC O-247AC 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: IRFP448, SiHFP448 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 500 RDS(on) (Ω) VGS = 10 V 0.60 Qg (Max.) (nC) 84 Qgs (nC) 8.4 Qgd (nC) 50 Configuration Single D RoHS* COMPLIANT Third Generation Power MOSFETs from Vishay provide the


    Original     		PDF IRFP448, SiHFP448 2002/95/EC O-247AC O-247AC O-22hay 11-Mar-11

    IRFP32N50K

    Abstract: No abstract text available
    Text: IRFP32N50K, SiHFP32N50K Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 500 RDS(on) (Ω) VGS = 10 V 0.135 Qg (Max.) (nC) 190 Qgs (nC) 59 Qgd (nC) • Improved Gate, Avalanche and Dynamic dV/dt


    Original     		PDF IRFP32N50K, SiHFP32N50K 2002/95/EC O-247AC O-247AC IRFP32N50KPbhay 11-Mar-11 IRFP32N50K

    91248

    Abstract: No abstract text available
    Text: IRFPE50, SiHFPE50 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 800 RDS(on) (Ω) VGS = 10 V • Repetitive Avalanche Rated 1.2 Qg (Max.) (nC) 200 • Isolated Central Mounting Hole Qgs (nC) 24 • Fast Switching 110


    Original     		PDF IRFPE50, SiHFPE50 2002/95/EC O-247AC O-247AC 11-Mar-11 91248

    Untitled

    Abstract: No abstract text available
    Text: IRFP21N60L, SiHFP21N60L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Superfast Body Diode Eliminates the Need for External Diodes in ZVS Applications 600 RDS(on) () VGS = 10 V 0.27 Qg (Max.) (nC) 150 Qgs (nC) 46 Qgd (nC) 64 Configuration


    Original     		PDF IRFP21N60L, SiHFP21N60L 2002/95/EC O-247AC 11-Mar-11

    SiHG73N60E

    Abstract: SIHG73N60E-GE3
    Text: SiHG73N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low Figure-of-Merit (FOM) Ron x Qg 650 RDS(on) max. at 25 °C () VGS = 10 V • Low Input Capacitance (Ciss) 0.039 • Reduced Switching and Conduction Losses


    Original     		PDF SiHG73N60E O-247AC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 SIHG73N60E-GE3

    Untitled

    Abstract: No abstract text available
    Text: The Perkin Elmer Optoelectronics LD2100 high performance digital line scan cameras set new performance standards in line scan imaging. Innovative design features provide ultra-high performance while offering the flexibility required for line scan imaging applications.


    Original     		PDF LD2100 10-bit RS-232 S-4096, S-6144, S-8192 800-775-OPTO

    Untitled

    Abstract: No abstract text available
    Text: IRFP048R, SiHFP048R Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) • Isolated Central Mounting Hole 0.018 • 175 °C Operating Temperature 110 Qgs (nC) 29 Qgd (nC) 38 Configuration


    Original     		PDF IRFP048R, SiHFP048R 2002/95/EC O-247AC O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU.

    Untitled

    Abstract: No abstract text available
    Text: IRFP140, SiHFP140 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 100 RDS(on) (Ω) VGS = 10 V 0.077 Qg (Max.) (nC) 72 Qgs (nC) 11 Qgd (nC) 32 Configuration Single D TO-247AC Dynamic dV/dt Rating Repetitive Avalanche Rated


    Original     		PDF IRFP140, SiHFP140 O-247AC 2002/95/EC O-247AC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12