IRFP048R
Abstract: 7052A
Text: IRFP048R, SiHFP048R Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 110 Qgs (nC) 29 Qgd (nC) 38 Configuration • Isolated Central Mounting Hole 0.018 COMPLIANT • Ease of Paralleling
|
Original
|
IRFP048R,
SiHFP048R
O-247
O-220
O-218
18-Jul-08
IRFP048R
7052A
|
PDF
|
IRFP048R
Abstract: No abstract text available
Text: IRFP048R, SiHFP048R Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 110 Qgs (nC) 29 Qgd (nC) 38 Configuration • Isolated Central Mounting Hole 0.018 COMPLIANT • Ease of Paralleling
|
Original
|
IRFP048R,
SiHFP048R
O-247
O-220
O-218
18-Jul-08
IRFP048R
|
PDF
|
Untitled
Abstract: No abstract text available
Text: IRFP048R, SiHFP048R Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) • Isolated Central Mounting Hole 0.018 • 175 °C Operating Temperature 110 Qgs (nC) 29 Qgd (nC) 38 Configuration
|
Original
|
IRFP048R,
SiHFP048R
2002/95/EC
O-247AC
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
|
PDF
|
Untitled
Abstract: No abstract text available
Text: IRFP048R, SiHFP048R Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) • Isolated Central Mounting Hole 0.018 • 175 °C Operating Temperature 110 Qgs (nC) 29 Qgd (nC) 38 Configuration
|
Original
|
IRFP048R,
SiHFP048R
2002/95/EC
O-247AC
O-220AB
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
|
PDF
|
Untitled
Abstract: No abstract text available
Text: IRFP048R, SiHFP048R Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) • Isolated Central Mounting Hole 0.018 • 175 °C Operating Temperature 110 Qgs (nC) 29 Qgd (nC) 38 Configuration
|
Original
|
IRFP048R,
SiHFP048R
2002/95/EC
O-247AC
O-220AB
11-Mar-11
|
PDF
|
Untitled
Abstract: No abstract text available
Text: IRFP048R, SiHFP048R Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) • Isolated Central Mounting Hole 0.018 • 175 °C Operating Temperature 110 Qgs (nC) 29 Qgd (nC) 38 Configuration
|
Original
|
IRFP048R,
SiHFP048R
2002/95/EC
O-247AC
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
|
PDF
|
Untitled
Abstract: No abstract text available
Text: IRFP048R, SiHFP048R Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) • Isolated Central Mounting Hole 0.018 • 175 °C Operating Temperature 110 Qgs (nC) 29 Qgd (nC) 38 Configuration
|
Original
|
IRFP048R,
SiHFP048R
2002/95/EC
O-247AC
O-220AB
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
|
PDF
|
SiHF
Abstract: No abstract text available
Text: IRFP048R_RC, SiHFP048R_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,
|
Original
|
IRFP048R
SiHFP048R
AN609,
07-Jun-10
SiHF
|
PDF
|
Untitled
Abstract: No abstract text available
Text: IRFP048R, SiHFP048R Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) • Isolated Central Mounting Hole 0.018 • 175 °C Operating Temperature 110 Qgs (nC) 29 Qgd (nC) 38 Configuration
|
Original
|
IRFP048R,
SiHFP048R
2002/95/EC
O-247AC
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
|
PDF
|
Untitled
Abstract: No abstract text available
Text: IRFP048R, SiHFP048R Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 110 Qgs (nC) 29 Qgd (nC) 38 Configuration • Isolated Central Mounting Hole 0.018 COMPLIANT • Ease of Paralleling
|
Original
|
IRFP048R,
SiHFP048R
O-247
O-220
12-Mar-07
|
PDF
|