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    11N65C Search Results

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    11N65C Price and Stock

    Infineon Technologies AG SPA11N65C3XKSA1

    MOSFET N-CH 650V 11A TO220-FP
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    DigiKey SPA11N65C3XKSA1 Tube 761 1
    • 1 $3.28
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    • 100 $3.28
    • 1000 $1.12137
    • 10000 $1.07888
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    Avnet Americas SPA11N65C3XKSA1 Tube 15 Weeks 500
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    • 1000 $1.06556
    • 10000 $1.0275
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    Newark SPA11N65C3XKSA1 Bulk 345 1
    • 1 $4.13
    • 10 $3.11
    • 100 $2.2
    • 1000 $1.71
    • 10000 $1.71
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    Rochester Electronics SPA11N65C3XKSA1 100 1
    • 1 $1.2
    • 10 $1.2
    • 100 $1.13
    • 1000 $1.02
    • 10000 $1.02
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    EBV Elektronik SPA11N65C3XKSA1 16 Weeks 500
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    Infineon Technologies AG SPP11N65C3XKSA1

    MOSFET N-CH 650V 11A TO220-3
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    DigiKey SPP11N65C3XKSA1 Tube
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    Win Source Electronics SPP11N65C3XKSA1 1,950
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    • 100 $1.112
    • 1000 $0.903
    • 10000 $0.903
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    Infineon Technologies AG SPP11N65C3HKSA1

    MOSFET N-CH 650V 11A TO-220
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    DigiKey SPP11N65C3HKSA1 Tube
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    Win Source Electronics SPP11N65C3HKSA1 1,900
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    • 100 $1.112
    • 1000 $0.903
    • 10000 $0.903
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    Infineon Technologies AG SPI11N65C3XKSA1

    MOSFET N-CH 650V 11A TO262-3
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    DigiKey SPI11N65C3XKSA1 Tube
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    EBV Elektronik SPI11N65C3XKSA1 21 Weeks 1
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    Infineon Technologies AG SPA11N65C3

    MOSFETs N-Ch 650V 11A TO220FP-3 CoolMOS C3
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    Mouser Electronics SPA11N65C3
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    Find more 11N65C price and stock on Findchips.com

    11N65C Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    ntc 5d-9

    Abstract: analog delay line schematic 11n65c3 AP3101 pc817c APPLICATION CIRCUITS FR107 SMD pq32 24v Advanced Analog Circuits B20100On AZ431
    Text: BCD Semi Ltd Co. AP3101 Demo Board Part Number: DB-AP3101-120W Seriers Number: V1.0-001 Content: 1. Description 2. Specifications 3. Schematics of the PCB 4. PCB Layout 5. PCB Dimensions 6. Photo View of the Demo Board 7. BOM 8. Test Result PROPRIETARY & CONFIDENTIAL


    Original     		PDF AP3101 DB-AP3101-120W 5V-265V 200mV ntc 5d-9 analog delay line schematic 11n65c3 pc817c APPLICATION CIRCUITS FR107 SMD pq32 24v Advanced Analog Circuits B20100On AZ431

    90W ac adapter schematic

    Abstract: npn 13001 90w flyback 90W laptop adapter 90W ac power adapter schematic TRIAC 13001 1W ZENER DIODE 90V AP1661 AP4310 AP3101 AP1661 WT210
    Text: BCD Semi Ltd Co. 90W AP3101+AP1661 Demo Board Manual Content: 1. Description 2. Specifications 3. Schematics of the PCB 4. PCB Layout 5. Photo View of the Demo Board 6. PCB Dimensions 7. BOM 8. Test Result PROPRIETARY & CONFIDENTIAL ADVANCED ANALOG CIRCUITS CORPORATION


    Original     		PDF AP3101 AP1661 100mV) 300mV 100mV 90W ac adapter schematic npn 13001 90w flyback 90W laptop adapter 90W ac power adapter schematic TRIAC 13001 1W ZENER DIODE 90V AP1661 AP4310 AP3101 AP1661 WT210

    11N65C3

    Abstract: 11N65C 11n65 SPA11N65C3 TRANSISTOR SMD MARKING CODE TRANSISTOR SMD MARKING CODE 7A SP000216318 SPP11N65C3 SPI11N65C3 11n6
    Text: 11N65C3,11N65C3 11N65C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO262 V DS 650 V RDS on 0.38 Ω ID 11 A PG-TO220FP PG-TO220 • Extreme dv/dt rated


    Original     		PDF SPP11N65C3 SPA11N65C3 SPI11N65C3 PG-TO262 PG-TO220FP PG-TO220 SPP11N65C3 Q67040-S4557 11N65C3 11N65C3 11N65C 11n65 SPA11N65C3 TRANSISTOR SMD MARKING CODE TRANSISTOR SMD MARKING CODE 7A SP000216318 SPI11N65C3 11n6

    11N65C3

    Abstract: No abstract text available
    Text: 11N65C3,11N65C3 11N65C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO262 V DS 650 V RDS on 0.38 Ω ID 11 A PG-TO220FP PG-TO220 • Extreme dv/dt rated


    Original     		PDF SPP11N65C3 SPA11N65C3 SPI11N65C3 PG-TO262 PG-TO220FP PG-TO220 SPP11N65C3 Q67040-S4557 11N65C3 11N65C3

    11N65C3

    Abstract: 11n65 11N65C SPP11N65C3 Q67040-S4554 MIL-STD-750-1038 Q67040-S4561 AN-TO220-3-31-01 TRANSISTOR SMD MARKING CODE 7A SPA11N65C3
    Text: 11N65C3, 11N65C3 11N65C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology VDS 650 V RDS on 0.38 Ω ID 11 A • Ultra low gate charge • Periodic avalanche rated P-TO262-3-1 P-TO220-3-31 P-TO220-3-1 • Extreme dv/dt rated


    Original     		PDF SPP11N65C3, SPA11N65C3 SPI11N65C3 P-TO262-3-1 P-TO220-3-31 P-TO220-3-1 SPP11N65C3 Q67040-S4557 11N65C3 11n65 11N65C SPP11N65C3 Q67040-S4554 MIL-STD-750-1038 Q67040-S4561 AN-TO220-3-31-01 TRANSISTOR SMD MARKING CODE 7A SPA11N65C3

    11n65

    Abstract: No abstract text available
    Text: Preliminary Datasheet POWER FACTOR CORRECTION CONTROLLER General Description Features The AP1661 is an active power factor control IC which is designed mainly for use as pre-converter in electronic ballast, AC-DC adapters and off-line SMPS applications. •


    Original     		PDF AP1661 AP1661 600mA 800mA 11n65

    Untitled

    Abstract: No abstract text available
    Text: 11N65C3, 11N65C3 11N65C3 Preliminary data Cool MOS Power Transistor Feature VDS @ Tjmax 820 V RDS on 0.38 Ω ID 11 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO262-3-1 P-TO220-3-31


    Original     		PDF SPP11N65C3, SPA11N65C3 SPI11N65C3 P-TO262-3-1 P-TO220-3-31 P-TO220-3-1 SPP11N65C3 Q67040-S4557 11N65C3

    11n65

    Abstract: Q67040-S4554 Q67040-S4557 11N65C3 SPP11N65C3
    Text: 11N65C3,11N65C3 11N65C3 Cool MOS Power Transistor Feature VDS @ Tjmax 820 V RDS on 0.38 Ω ID 11 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO262-3-1 PG-TO220-3-31 PG-TO220-3-1 • Extreme dv/dt rated


    Original     		PDF SPP11N65C3 SPA11N65C3 SPI11N65C3 PG-TO262-3-1 PG-TO220-3-31 PG-TO220-3-1 SPI11N65C3 11N65C3 11n65 Q67040-S4554 Q67040-S4557

    11N65C3

    Abstract: 11n65
    Text: 11N65C3,11N65C3 11N65C3 Cool MOS Power Transistor Feature VDS @ Tjmax 820 V RDS on 0.38 Ω ID 11 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO262-3-1 PG-TO220-3-31 PG-TO220-3-1 • Extreme dv/dt rated


    Original     		PDF SPP11N65C3 SPA11N65C3 SPI11N65C3 PG-TO262-3-1 PG-TO220-3-31 PG-TO220-3-1 SPI11N65C3 11N65C3 11n65

    Untitled

    Abstract: No abstract text available
    Text: 11N65C3,11N65C3 11N65C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge PG-TO262 • Periodic avalanche rated V DS 650 V RDS on 0.38 Ω ID 11 A PG-TO220FP PG-TO220 • Extreme dv/dt rated


    Original     		PDF SPP11N65C3 SPA11N65C3 SPI11N65C3 PG-TO262 PG-TO220FP PG-TO220 SPP11N65C3 Q67040-S4557 11N65C3

    ap1661p

    Abstract: 1661M-G1 11n65 11n65c3 AP1661 AP1661M-G1 11N65C 1661m AP1661M-E1 AP1661P-G1
    Text: Data Sheet POWER FACTOR CORRECTION CONTROLLER General Description Features The AP1661 is an active power factor control IC which is designed mainly for use as pre-converter in electronic ballast, AC-DC adapters and off-line SMPS applications. • · · · The AP1661 includes an internal start-up timer for


    Original     		PDF AP1661 AP1661 600mA 800mA ap1661p 1661M-G1 11n65 11n65c3 AP1661M-G1 11N65C 1661m AP1661M-E1 AP1661P-G1

    PEF 24628

    Abstract: PSB 21493 siemens PMB 6610 47n60c3 psb 21553 Pmb7725 PEF 22628 PMB6610 psb 50505 PMB 6819
    Text: 2006/2007 Published by Infineon Technologies AG Ordering No. B192-H6780-G10-X-7600 Printed in Germany PS 080648. nb Infineon Product Catalog for Distribution 2006/2007 Product Catalog for Distribution www.infineon.com/distribution Edition July 2006 Published by


    Original     		PDF B192-H6780-G10-X-7600 SP000012954 SP000013610 SP000017969 SP000014627 SP000018085 SP000018086 PEF 24628 PSB 21493 siemens PMB 6610 47n60c3 psb 21553 Pmb7725 PEF 22628 PMB6610 psb 50505 PMB 6819

    BCM 4336

    Abstract: 2A0565 C2335 2A280Z C1740 bipolar transistor transistor A1267 a1273 transistor c2335 r 2B0565 2b265
    Text: 01.07.2005 11:10 Uhr Seite 2 Shor t Form Catalog for Distribution 2005/06 w w w. i n f i n e o n . c o m / d i s t r i b u t i o n Published by Infineon Technologies AG Ordering No. B192-H6780-G9-X-7600 Printed in Germany LM 060550. Shor t Form Catalog Distribution 2005/06


    Original     		PDF B192-H6780-G9-X-7600 D-81669 VDSL5100i-E VDSL6100i-E BCM 4336 2A0565 C2335 2A280Z C1740 bipolar transistor transistor A1267 a1273 transistor c2335 r 2B0565 2b265

    AP1661

    Abstract: 11N65C3 cs 9110 d2 power factor correction boost topology 11N65C mosfet power totem pole CIRCUIT 1N4148 MUR460 mosfet triggering circuit power mosfet triggering circuit
    Text: Application Note 1006 Design of Power Factor Correction Circuit Using AP1661 Prepared by Zhu Shihai System Engineering Department 1. Introduction 2. Product Features The AP1661 is an active power factor control IC which is designed mainly for use as a pre-converter in


    Original     		PDF AP1661 AP1661 600mA 800mA 11N65C3 cs 9110 d2 power factor correction boost topology 11N65C mosfet power totem pole CIRCUIT 1N4148 MUR460 mosfet triggering circuit power mosfet triggering circuit

    11N65C3

    Abstract: 11N65C SPI11N65C3 SPP11N65C3 SP000216318 11n65
    Text: 11N65C3,11N65C3 11N65C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO262 V DS 650 V RDS on 0.38 Ω ID 11 A PG-TO220-3-31 PG-TO220 • Extreme dv/dt rated


    Original     		PDF SPP11N65C3 SPA11N65C3 SPI11N65C3 PG-TO262 PG-TO220-3-31 PG-TO220 SPI11N65C3 PG-TO220 11N65C3 11N65C SP000216318 11n65

    11n65

    Abstract: 11N65C3 11N65C SPA11N65C3
    Text: 11N65C3,11N65C3 11N65C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO262-3 V DS 650 V RDS on 0.38 Ω ID 11 A PG-TO220-3-31 PG-TO220-3-1 • Extreme dv/dt rated


    Original     		PDF SPP11N65C3 SPA11N65C3 SPI11N65C3 PG-TO262-3 PG-TO220-3-31 PG-TO220-3-1 SPI11N65C3 11N65C3 11n65 11N65C

    11N65C3

    Abstract: SPP11N65C3 11n65 A O TRANSISTOR SMD MARKING CODE SPA11N65C3 11N65C Q67040-S4561
    Text: 11N65C3,11N65C3 11N65C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO262-3-1 V DS 650 V RDS on 0.38 Ω ID 11 A PG-TO220-3-31 PG-TO220-3-1 • Extreme dv/dt rated


    Original     		PDF SPP11N65C3 SPA11N65C3 SPI11N65C3 PG-TO262-3-1 PG-TO220-3-31 PG-TO220-3-1 SPI11N65C3 11N65C3 11n65 A O TRANSISTOR SMD MARKING CODE 11N65C Q67040-S4561

    11N65C3

    Abstract: SPA11N65C3 SPI11N65C3 SPP11N65C3
    Text: 11N65C3,11N65C3 11N65C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO262 V DS 650 V RDS on 0.38 Ω ID 11 A PG-TO220FP PG-TO220 • Extreme dv/dt rated


    Original     		PDF SPP11N65C3 SPA11N65C3 SPI11N65C3 PG-TO262 PG-TO220FP PG-TO220 SPP11N65C3 Q67040-S4557 11N65C3 11N65C3 SPA11N65C3 SPI11N65C3