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    KEMET Corporation 71PF310050H6K

    Film Capacitors 630V .10uF 85C 10% LS=10mm
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    TTI 71PF310050H6K Bulk 4,500
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    11X13MM Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    EM6A9325

    Abstract: No abstract text available
    Text: EtronTech EM6A9325 4M x 32 Low Power SDRAM LPSDRAM Preliminary (Rev 0.4 June/2003) Features • 4096 refresh cycles/64ms • Single 2.5V power supply • Interface: LVCMOS •Package : 90 ball-FBGA, 11x13mm, Lead Free • • • • • Clock rate: 133/125/100 MHz


    Original     		PDF EM6A9325 June/2003) cycles/64ms 11x13mm, 32bit EM6A9325BG-7 133MHz 11x13 125y1 EM6A9325

    EM669325

    Abstract: No abstract text available
    Text: EtronTech EM669325 4M x 32 Low Power SDRAM LPSDRAM Preliminary (Rev 0.6 Sep./2003) Features • 4096 refresh cycles/64ms • Single 3.0V, or 3.3V power supply • Interface: LVTTL •Package : 90 ball-FBGA, 11x13mm, Lead Free • • • • • Clock rate: 133/125/100 MHz


    Original     		PDF EM669325 cycles/64ms 11x13mm, 32bit EM669325BG-7 133MHz 11x13 90-FBGA, EM669325

    K8D3216UBC-pi07

    Abstract: K5E5658HCM KAD070J00M KBH10PD00M K5D1257ACM-D090000 samsung ddr2 ram MTBF KBB05A500A K801716UBC k5d1g13acm k5a3281ctm
    Text: Product Selection Guide Memory and Storage April 2005 MEMORY AND STORAGE SECTION A DRAM DDR2 SDRAM DDR SDRAM SDRAM RDRAM NETWORK DRAM MOBILE SDRAM GRAPHICS DDR SDRAM DRAM ORDERING INFORMATION FLASH NAND, OneNAND, NOR FLASH NAND FLASH ORDERING INFORMATION SRAM


    Original     		PDF BR-05-ALL-002 K8D3216UBC-pi07 K5E5658HCM KAD070J00M KBH10PD00M K5D1257ACM-D090000 samsung ddr2 ram MTBF KBB05A500A K801716UBC k5d1g13acm k5a3281ctm

    TRAY FBGA 11X13

    Abstract: S72MS512PE0HF94V MCP NAND sDR S72MS-P BGA 15X15 137-Ball MCP NAND DDR S30MS-P Spansion NAND Flash Spansion NAND Flash DIE
    Text: S72MS-P based MCP/PoP Products 1.8 Volt-only x16 Flash Memory and SDRAM on Split Bus NAND Interface ORNAND Flash on Bus 1 Mobile SDRAM on Bus 2 Data Sheet Advance Information S72MS-P based MCP/PoP Products Cover Sheet Notice to Readers: This document states the current technical specifications regarding the Spansion


    Original     		PDF S72MS-P TRAY FBGA 11X13 S72MS512PE0HF94V MCP NAND sDR BGA 15X15 137-Ball MCP NAND DDR S30MS-P Spansion NAND Flash Spansion NAND Flash DIE

    W29GL256P

    Abstract: W29GL256
    Text: W29GL256P 256M-BIT 3.0-VOLT PARALLEL FLASH MEMORY WITH PAGE MODE W29GL256P Table of Contents 1 2 3 4 5 6 7 GENERAL DESCRIPTION . 1 FEATURES . 1


    Original     		PDF W29GL256P 256M-BIT W29GL256P W29GL256

    is25c64B

    Abstract: IC61C1024 IS25C128A IS42VM16800E IS42SM16800 IS24C16A Smart is62c1024al tsop2-54 4kx8 sram IS42S32800D
    Text: To our valued customers, Often times electronic systems are placed in harsh environments that test the limits of device quality and reliability. These harsh environments exist in many Industrial, Automotive, Networking, and Mobile Communication applications. Many of these applications are


    Original     		PDF

    is42s16320

    Abstract: IS42S16320B-7BLI is42s16320b IS42S16320B-7TLI IS42S86400B IS42S86400B-7TL IS42S16320B-7BL MA3006 D1130
    Text: IS42S86400B IS42S16320B, IS45S16320B 64M x 8, 32M x 16 DECEMBER 2009 512Mb SYNCHRONOUS DRAM FEATURES • Clock frequency: 166, 143, 133 MHz • Fully synchronous; all signals referenced to a positive clock edge OVERVIEW ISSI's 512Mb Synchronous DRAM achieves high-speed


    Original     		PDF IS42S86400B IS42S16320B, IS45S16320B 512Mb IS42/45S16320B IS42/45S16320B is42s16320 IS42S16320B-7BLI is42s16320b IS42S16320B-7TLI IS42S86400B IS42S86400B-7TL IS42S16320B-7BL MA3006 D1130

    Untitled

    Abstract: No abstract text available
    Text: IS42S86400B IS42S16320B, IS45S16320B 64M x 8, 32M x 16 SEPTEMBER 2009 512Mb SYNCHRONOUS DRAM FEATURES • Clock frequency: 166, 143, 133 MHz • Fully synchronous; all signals referenced to a positive clock edge OVERVIEW ISSI's 512Mb Synchronous DRAM achieves high-speed


    Original     		PDF IS42S86400B IS42S16320B, IS45S16320B 512Mb IS42/45S16320B IS42S86400B 54-pin IS42/45S16320B IS42S86400B,

    Untitled

    Abstract: No abstract text available
    Text: IS42S86400B IS42S16320B 64M x 8, 32M x 16 512Mb SYNCHRONOUS DRAM PRELIMINARY INFORMATION MARCH 2008 FEATURES • Clock frequency: 143, 133 MHz • Fully synchronous; all signals referenced to a positive clock edge OVERVIEW ISSI's 512Mb Synchronous DRAM achieves high-speed


    Original     		PDF IS42S86400B IS42S16320B 512Mb IS42S86400B 54-pin 54-ball

    IS29GL256

    Abstract: No abstract text available
    Text: IS29GL256 256 Megabit 32768K x 8-bit / 16384K x 16-bit Flash Memory Page mode Flash Memory, CMOS 3.0 Volt-only FEATURES • Single power supply operation - Full voltage range: 2.7 to 3.6 volts read and write operations • High performance - Access times as fast as 90 ns


    Original     		PDF IS29GL256 32768K 16384K 16-bit) 8-word/16-byte 32-word/64-byte 128-word/256-byte 8-word/16byte IS29GL256 IS29GL256-JTLE

    is62c51216al

    Abstract: IS43LR16320B IS66WVE4M16BLL is66wve2m16 IS43DR16640A BGA60 IS66WVE4M16ALL TSOP2-44 IS42SM16400G is45vs16160d
    Text: To our valued customers, At ISSI we design, develop and market high performance integrated circuits for the following key markets: i automotive electronics (ii) networking/telecommunications infrastructure, (iii) industrial/military/medical electronics (iv) mobile communications and digital


    Original     		PDF

    RISC-Processor s3c2410

    Abstract: MR16R1624DF0-CM8 arm9 samsung s3c2440 architecture chip 3351 dvd sp0411n K9W8G08U1M sandisk micro SD Card 2GB arm9 s3c2440 K9F1G08U0A K6X8008C2B
    Text: A Section MEMORY Table of Contents SECTION A PAGE DRAM SDRAM 3a – 4a DDR SDRAM 5a – 6a DDR2 SDRAM 7a RDRAM 8a NETWORK DRAM 8a MOBILE SDRAM 9a GRAPHICS DDR SDRAM 10a DRAM ORDERING INFORMATION 11a –13a NAND FLASH COMPONENTS, SMART MEDIA, COMPACT FLASH


    Original     		PDF BR-04-ALL-005 BR-04-ALL-004 RISC-Processor s3c2410 MR16R1624DF0-CM8 arm9 samsung s3c2440 architecture chip 3351 dvd sp0411n K9W8G08U1M sandisk micro SD Card 2GB arm9 s3c2440 K9F1G08U0A K6X8008C2B

    Untitled

    Abstract: No abstract text available
    Text: IS39LV512 / IS39LV010 / IS39LV040 512 Kbit / 1Mbit / 4Mbit 3.0 Volt-only CMOS Flash Memory FEATURES • Single Power Supply Operation - Low voltage range: 2.70 V - 3.60 V • Memory Organization - IS39LV512: 64K x 8 512 Kbit - IS39LV010: 128K x 8 (1 Mbit)


    Original     		PDF IS39LV512 IS39LV010 IS39LV040 IS39LV512: IS39LV010: IS39LV040: IS39LV512) 208mil 150mil 11x13mm)

    Untitled

    Abstract: No abstract text available
    Text: IS42S86400B IS42S16320B, IS45S16320B 64M x 8, 32M x 16 512Mb SYNCHRONOUS DRAM FEATURES • Clock frequency: 166, 143, 133 MHz • Fully synchronous; all signals referenced to a positive clock edge DECEMBER 2011 OVERVIEW ISSI's 512Mb Synchronous DRAM achieves high-speed


    Original     		PDF IS42S86400B IS42S16320B, IS45S16320B 512Mb IS42/45S16320B 11x13mm IS42S86400B,

    EM669

    Abstract: No abstract text available
    Text: EtronTech EM66932A 4M x 32 Hand-Held Low Power SDRAM LPSDRAM Preliminary (Rev 0.1 June/2003) Features • • • • • Clock rate: 133/125/100 MHz Fully synchronous operation Internal pipelined architecture Four internal banks (1M x 32bit x 4bank) Programmable Mode


    Original     		PDF EM66932A June/2003) 32bit cycles/64ms 11x13mto 90-FBGA, EM669

    DRAM11

    Abstract: ALN186 186-ball OB18-6
    Text: S72NS-S Based MCPs MirrorBit Eclipse Flash Memory and DRAM 2 Gb 128M x 16 bit , 1.8 Volt-only, Multiplexed Simultaneous Read/ Write, Burst Mode Flash Memory 512 Mb (32M x 16 bit) DDR DRAM on Split Bus S72NS-S Based MCPs Cover Sheet Data Sheet (Advance Information)


    Original     		PDF S72NS-S DRAM11 ALN186 186-ball OB18-6

    IS42S86400B

    Abstract: IS42S16320B is42s86400
    Text: IS42S86400B IS42S16320B, IS45S16320B 64M x 8, 32M x 16 OCTOBER 2010 512Mb SYNCHRONOUS DRAM OVERVIEW ISSI's 512Mb Synchronous DRAM achieves high-speed FEATURES • Clock frequency: 166, 143, 133 MHz • Fully synchronous; all signals referenced to a positive clock edge


    Original     		PDF IS42S86400B IS42S16320B, IS45S16320B 512Mb IS42/45S16320B IS42/45S2/45S16320B IS42S86400B IS42S16320B is42s86400

    IS45S16320B-7TLA2

    Abstract: IS42S86400B IS42S16320B IS45S16320B
    Text: IS42S86400B IS42S16320B, IS45S16320B 64M x 8, 32M x 16 APRIL 2011 512Mb SYNCHRONOUS DRAM OVERVIEW ISSI's 512Mb Synchronous DRAM achieves high-speed FEATURES • Clock frequency: 166, 143, 133 MHz • Fully synchronous; all signals referenced to a positive clock edge


    Original     		PDF IS42S86400B IS42S16320B, IS45S16320B 512Mb IS42/45S16320B Sel2/45S16320B 11x13mm IS45S16320B-7TLA2 IS42S86400B IS42S16320B IS45S16320B

    Untitled

    Abstract: No abstract text available
    Text: IS42S32160B IS45S32160B 16M x 32 512Mb SYNCHRONOUS DRAM PRELIMINARY INFORMATION JULY 2009 FEATURES • Clock frequency: 166, 143 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge OVERVIEW


    Original     		PDF IS42S32160B IS45S32160B 512Mb IS42S32160B, 11x13mm

    is42s16320

    Abstract: No abstract text available
    Text: IS42S86400B IS42S16320B, IS45S16320B 64M x 8, 32M x 16 DECEMBER 2010 512Mb SYNCHRONOUS DRAM OVERVIEW ISSI's 512Mb Synchronous DRAM achieves high-speed FEATURES • Clock frequency: 166, 143, 133 MHz • Fully synchronous; all signals referenced to a positive clock edge


    Original     		PDF IS42S86400B IS42S16320B, IS45S16320B 512Mb IS42/45S16320B IS42S86400B 54LTSOP-2 11x13mm IS42S86400B, IS42/45S16320B is42s16320

    Untitled

    Abstract: No abstract text available
    Text: IS42S86400B IS42S16320B 64M x 8, 32M x 16 512Mb SYNCHRONOUS DRAM PRELIMINARY INFORMATION SEPTEMBER 2008 FEATURES • Clock frequency: 166, 143 MHz • Fully synchronous; all signals referenced to a positive clock edge OVERVIEW ISSI's 512Mb Synchronous DRAM achieves high-speed


    Original     		PDF IS42S86400B IS42S16320B 512Mb IS42S86400B 54-pin 54-baches

    2l01

    Abstract: LFBGA64
    Text: W29GL128C 128M-BIT 3.0-VOLT PARALLEL FLASH MEMORY WITH PAGE MODE Publication Release Date: August 3, 2012 Revision F BLANK W29GL128C Table of Contents 1 2 3 4 5 6 7 GENERAL DESCRIPTION . 1


    Original     		PDF W29GL128C 128M-BIT 2l01 LFBGA64

    Automotive Product Selector Guide

    Abstract: products automotive IS61WV51216 IS61WV512 DDR RAM 512M is66wve2m16 IS61LPS2048 IS61WV25632 BGA165 VFBGA package tray
    Text: Automotive Market Support Introduction ISSI has been supporting the Automotive Market since 1999. In 2001, ISSI began to broaden its support of the market by introducing the Automotive Business Unit. The purpose of this business unit is to provide cross-functional unit support within ISSI to continually enhance the Automotive Infrastructure from


    Original     		PDF

    IS39LV010

    Abstract: A114 ESD IS39LV040
    Text: IS39LV512 / IS39LV010 / IS39LV040 512 Kbit / 1Mbit / 4Mbit 3.0 Volt-only CMOS Flash Memory FEATURES • Single Power Supply Operation - Low voltage range: 2.70 V - 3.60 V • Memory Organization - IS39LV512: 64K x 8 512 Kbit - IS39LV010: 128K x 8 (1 Mbit)


    Original     		PDF IS39LV512: IS39LV010: IS39LV040: IS39LV512) 208mil 150mil 11x13mm) com22 IS39LV512 IS39LV010 A114 ESD IS39LV040