Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    120 GSM Search Results

    120 GSM Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    DAC38RF96IAAVR Texas Instruments Dual-Channel, 14-Bit, 9-GSPS, 12x-24x Interpolating, 9 GHz GSM PLL Digital-to-Analog Converter (DAC) 144-FCBGA -40 to 85 Visit Texas Instruments Buy
    DAC38RF87IAAVR Texas Instruments Dual-Channel, 14-Bit, 6.2-GSPS, 6x-24x Interpolating, 6 GHz GSM PLL Digital-to-Analog Converter 144-FCBGA -40 to 85 Visit Texas Instruments Buy
    DAC38RF97IAAV Texas Instruments Dual-Channel, 14-Bit, 6-GSPS, 12x-24x Interpolating, 6-GHz GSM PLL Digital-to-Analog Converter (DAC) 144-FCBGA -40 to 85 Visit Texas Instruments Buy
    DAC38RF86IAAVR Texas Instruments Dual-Channel, 14-Bit, 9-GSPS, 6x-24x Interpolating, 9 GHz GSM PLL Digital-to-Analog Converter (DAC) 144-FCBGA -40 to 85 Visit Texas Instruments Buy
    DAC38RF86IAAV Texas Instruments Dual-Channel, 14-Bit, 9-GSPS, 6x-24x Interpolating, 9 GHz GSM PLL Digital-to-Analog Converter (DAC) 144-FCBGA -40 to 85 Visit Texas Instruments Buy
    SF Impression Pixel

    120 GSM Price and Stock

    Fischer Elektronik GmbH & Co KG SL-LP-5-SMD-051-20-G-SM

    0.635 MM, LOW PROFILE<ST
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SL-LP-5-SMD-051-20-G-SM Tube 10
    • 1 -
    • 10 $1.55
    • 100 $1.55
    • 1000 $1.55
    • 10000 $1.55
    		Buy Now

    Fischer Elektronik GmbH & Co KG SL-LP-6-SMD-051-20-G-SM

    0.635 MM, LOW PROFILE IN SMD-T
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SL-LP-6-SMD-051-20-G-SM Tube 10
    • 1 -
    • 10 $1.29
    • 100 $1.29
    • 1000 $1.29
    • 10000 $1.29
    		Buy Now

    Fischer Elektronik GmbH & Co KG SL-LP-6-SMD-051-20-G-SM-PS

    0.635 MM, LOW PROFILE IN SMD-T
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SL-LP-6-SMD-051-20-G-SM-PS Tube 10
    • 1 -
    • 10 $1.9
    • 100 $1.9
    • 1000 $1.9
    • 10000 $1.9
    		Buy Now

    ATP Electronics Inc AF120GSMCJ-NAAXP

    120GB COMMERCIAL GRADE MIV 2.5" SATA SSD W/POWERPROTECTOR - Bulk (Alt: AF120GSMCJ-NAAXP)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas AF120GSMCJ-NAAXP Bulk 1
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Get Quote

    ATP Electronics Inc AF120GSMCJ-NAAUP

    120GB MIV MLC COMMERCIAL GRADE SATA SIII 2.5" SSD W/CC & PP - Bulk (Alt: AF120GSMCJ-NAAUP)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas AF120GSMCJ-NAAUP Bulk 16 Weeks 1
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Get Quote
    Find more 120 GSM price and stock on Findchips.com

    120 GSM Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    4G10

    Abstract: BLF4G10-120 BLF4G10S-120 ACPR400 ACPR600
    Text: BLF4G10-120; BLF4G10S-120 UHF power LDMOS transistor Rev. 01 — 10 January 2006 Product data sheet 1. Product profile 1.1 General description 120 W LDMOS power transistor for base station applications at frequencies from 800 MHz to 1000 MHz. Table 1: Typical performance


    Original     		PDF BLF4G10-120; BLF4G10S-120 ACPR400 ACPR600 ACPR400 4G10 BLF4G10-120 BLF4G10S-120

    po111

    Abstract: ELNA capacitor 100 uf 50v transistor a09
    Text: PTFA091201GL PTFA091201HL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 120 W, 920 – 960 MHz Description The PTFA091201GL and PTFA091201HL are 120-watt LDMOS FETs designed for ultra-linear GSM/EDGE power amplifier applications in


    Original     		PDF PTFA091201GL PTFA091201HL PTFA091201HL 120-watt PG-63248-2 PG-64248-2 po111 ELNA capacitor 100 uf 50v transistor a09

    BCP56

    Abstract: LM7805 PTFA091201GL PTFA091201HL A0912
    Text: PTFA091201GL PTFA091201HL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 120 W, 920 – 960 MHz Description The PTFA091201GL and PTFA091201HL are 120-watt LDMOS FETs designed for ultra-linear GSM/EDGE power amplifier applications in


    Original     		PDF PTFA091201GL PTFA091201HL PTFA091201GL PTFA091201HL 120-watt PG-63248-2 PG-64248-2 BCP56 LM7805 A0912

    Untitled

    Abstract: No abstract text available
    Text: PTFA091201E PTFA091201F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 120 W, 920 – 960 MHz Description The PTFA091201E and PTFA091201F are 120-watt LDMOS FETs designed for ultra-linear GSM/EDGE power amplifier applications in


    Original     		PDF PTFA091201E PTFA091201F PTFA091201E PTFA091201F 120-watt H-36248-2 H-37248-2

    BCP56

    Abstract: LM7805 PTFA091201E PTFA091201F PTFA091201EV4
    Text: PTFA091201E PTFA091201F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 120 W, 920 – 960 MHz Description The PTFA091201E and PTFA091201F are 120-watt LDMOS FETs designed for ultra-linear GSM/EDGE power amplifier applications in


    Original     		PDF PTFA091201E PTFA091201F PTFA091201E PTFA091201F 120-watt H-36248-2 H-37248-2 BCP56 LM7805 PTFA091201EV4

    ceramic capacitor 103 z 2kv

    Abstract: No abstract text available
    Text: PTFA091201E PTFA091201F Thermally-Enhanced High Power RF LDMOS FETs 120 W, 920 – 960 MHz Description The PTFA091201E and PTFA091201F are thermally-enhanced, 120-watt, internally matched GOLDMOS FETs intended for ultralinear applications. They are characaterized for GSM/EDGE and


    Original     		PDF PTFA091201E PTFA091201F 120-watt, ceramic capacitor 103 z 2kv

    LM7805

    Abstract: ptfa091201e BCP56 PTFA091201F
    Text: PTFA091201E PTFA091201F Thermally-Enhanced High Power RF LDMOS FETs 120 W, 920 – 960 MHz Description The PTFA091201E and PTFA091201F are thermally-enhanced, 120-watt, internally matched GOLDMOS FETs intended for ultralinear applications. They are characaterized for GSM/EDGE and


    Original     		PDF PTFA091201E PTFA091201F PTFA091201E PTFA091201F 120-watt, LM7805 BCP56

    DB978

    Abstract: DB978H120EKL
    Text: 1710-1880 MHz DB978H120EKL 13 dBd Panel Antenna 1710-1880 MHz 13 dBd 15.1 dBi Gain Vertical Polarization 120° Azimuth BW • 7.5° Elevation BW • 7/16 DIN (Bottom) • GSM1800 120° • • • • Azimuth (Horizontal) Elevation (Vertical) Electrical


    Original     		PDF DB978H120EKL GSM1800 DB390 DB5098 01/01-B ISO9001 DB978 DB978H120EKL

    1755

    Abstract: No abstract text available
    Text: DUAL POLARISED TRI-SECTOR ANTENNA GSM900 XP/3-120/15 TYPE 1755 ‰ TRI-SECTOR MONOPOLE MOUNTING ‰ 3 X 120 DEGREE SECTORS This Dual-polarised antenna is intended for sites where a low-profile 3-sector coverage is desired. The radome diameter is only 350mm, and the base flange assembly


    Original     		PDF GSM900 XP/3-120/15 350mm, 870-960MHz 15dBi -15dB 1755

    ACPR600

    Abstract: BLF4G10LS-120 ACPR400 BLF4G10-120 philips electrolytic capacitor
    Text: BLF4G10LS-120 UHF power LDMOS transistor Rev. 01 — 10 January 2006 Product data sheet 1. Product profile 1.1 General description 120 W LDMOS power transistor for base station applications at frequencies from 800 MHz to 1000 MHz. Table 1: Typical performance


    Original     		PDF BLF4G10LS-120 ACPR400 ACPR600 ACPR400 ACPR600 BLF4G10LS-120 BLF4G10-120 philips electrolytic capacitor

    siemens rs 1016

    Abstract: B37940-K5220-J62 B54102 B3749 0805CS-270XMBC type pd21 0805CS-220XMBC Q62702-G44 Siemens MMIC
    Text: CGY 120 GaAs MMIC Datasheet * Monolithic microwave IC MMIC-Amplifier for mobile communication * Variable gain amplifier for GSM/PCN applications * Gain Control range over 50dB


    Original     		PDF Q62702-G44 PD21/Gü siemens rs 1016 B37940-K5220-J62 B54102 B3749 0805CS-270XMBC type pd21 0805CS-220XMBC Q62702-G44 Siemens MMIC

    sirfstar 3

    Abstract: GSM based home appliance control circuit diagram GSP2E NTC 4,7 Siemens sirfstar 3 commands 2933 regulator 2933 Voltage Regulator GCF-CC GSP2E/LP GSM module circuit diagram
    Text: s XT55 Hardware Interface Description Confidential / Released XT55 Siemens Cellular Engine Version: DocID: 01.00 XT55_hd_v01.00 XT55_hd_v01.00 Page 1 of 120 Hardware Interface Description mobile 21.05.2004 s XT55 Hardware Interface Description Confidential / Released


    Original     		PDF 1119PV sirfstar 3 GSM based home appliance control circuit diagram GSP2E NTC 4,7 Siemens sirfstar 3 commands 2933 regulator 2933 Voltage Regulator GCF-CC GSP2E/LP GSM module circuit diagram

    UL-2601-1

    Abstract: UL2601-1 UL2601 IEC601-1-2 GSM28-28 EN60601-1 EN61000-4-2 EN61000-4-3 EN61000-4-4 EN61000-4-5
    Text: GSM28 Medical 28 Watt Global Performance Switchers FEATURES: • • • • • • • • Industry’s smallest 28 W medically approved switcher Compact size 4.00" x 2.59" x 0.92" Wide-range ac input: 85-264 Vac Less than 25 µA leakage current @ 120 Vac


    Original     		PDF GSM28 UL2601-1, EN60601-1 B/IEC601-1-2 vibration--10 2000Hz, UL-2601-1 UL2601-1 UL2601 IEC601-1-2 GSM28-28 EN60601-1 EN61000-4-2 EN61000-4-3 EN61000-4-4 EN61000-4-5

    cgh09120f

    Abstract: 3019 Transistor Ro4003
    Text: CGH09120F 120 W, UHF - 2.5 GHz, GaN HEMT for WCDMA, LTE, MC-GSM Cree’s CGH09120F is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH09120F ideal for MC-GSM, WCDMA and LTE


    Original     		PDF CGH09120F CGH09120F CGH0912 CGH09120F-TB 3019 Transistor Ro4003

    ATC600S

    Abstract: 8029 l2 circuit CAP 0805 ATC 600F 8029 l2 CGH0912 CGH09120F CGH09120F-TB RO4003 amplifier TRANSISTOR 12 GHZ
    Text: PRELIMINARY CGH09120F 120 W, UHF - 2.5 GHz, GaN HEMT for WCDMA, LTE, MC-GSM Cree’s CGH09120F is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH09120F ideal for MC-GSM, WCDMA and LTE


    Original     		PDF CGH09120F CGH09120F CGH0912 ATC600S 8029 l2 circuit CAP 0805 ATC 600F 8029 l2 CGH0912 CGH09120F-TB RO4003 amplifier TRANSISTOR 12 GHZ

    ATC600S

    Abstract: RO4003 CAP 0805 ATC 600F ATC 600F CGH0912 CGH09120F CGH09120F-TB JESD22 68-pF j 182
    Text: CGH09120F 120 W, UHF - 2.5 GHz, GaN HEMT for WCDMA, LTE, MC-GSM Cree’s CGH09120F is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH09120F ideal for MC-GSM, WCDMA and LTE


    Original     		PDF CGH09120F CGH09120F CGH0912 ATC600S RO4003 CAP 0805 ATC 600F ATC 600F CGH0912 CGH09120F-TB JESD22 68-pF j 182

    cgh09120f

    Abstract: ATC 600F lk 3058 3019 Transistor LTE AMPLIFIER
    Text: CGH09120F 120 W, UHF - 2.5 GHz, GaN HEMT for WCDMA, LTE, MC-GSM Cree’s CGH09120F is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH09120F ideal for MC-GSM, WCDMA and LTE


    Original     		PDF CGH09120F CGH09120F CGH0912 CGH09120F-TB ATC 600F lk 3058 3019 Transistor LTE AMPLIFIER

    Untitled

    Abstract: No abstract text available
    Text: DUAL POLARISED TRI-SECTOR ANTENNA GSM900 XP/3-120/15/0 TYPE 1755 TRI-SECTOR MONOPOLE MOUNTING 3 X 120O SECTORS This Dual-polarised antenna is intended for sites where a low-profile 3-sector coverage is desired. The radome diameter is only 350mm, and the base flange assembly


    Original     		PDF GSM900 XP/3-120/15/0 350mm, 870-960MHz 15dBi

    ul2601-1

    Abstract: EN60601-1 EN61000-4-2 EN61000-4-3 EN61000-4-4 EN61000-4-5
    Text: GSM28 Medical 28 Watt Global Performance Switchers GLOBAL PERFORMANCE SWITCHERS FEATURES: DC Power Supplies • Industry’s smallest 28 W medically approved switcher • Compact size 4.00” x 2.59” x 0.92” • Wide-range ac input: 85-264 Vac • Less than 25 A leakage current @ 120 Vac


    Original     		PDF GSM28 UL2601-1, EN60601-1 B/IEC601-1-2 vibration--10 2000Hz, 2000Hz ul2601-1 EN60601-1 EN61000-4-2 EN61000-4-3 EN61000-4-4 EN61000-4-5

    GSM pcb antenna

    Abstract: gsm antenna pcb MMCX connector GSM MMCx antenna PCB GSM ANTENNA datasheet GSM gsm antenna
    Text: RoHS Revisions RoHS  1 Initial Design  02/03/09 Revisions    NO DESCRIPTION 1 FR4 PCB 80*30*0.8mm 2 Ø1.13mm Cable 1202mm 3 Black Insulator Tape 4 MMCX M RA Connector taoglas limited GSM Penta-Band PCB Antenna – 120mm Ø1.13 MMCX(M)RA


    Original     		PDF 1202mm 120mm GSM pcb antenna gsm antenna pcb MMCX connector GSM MMCx antenna PCB GSM ANTENNA datasheet GSM gsm antenna

    MAX2042

    Abstract: No abstract text available
    Text: MAX2042A RELIABILITY REPORT FOR MAX2042AETP+ PLASTIC ENCAPSULATED DEVICES November 15, 2011 MAXIM INTEGRATED PRODUCTS 120 SAN GABRIEL DR. SUNNYVALE, CA 94086 Approved by Richard Aburano Quality Assurance Manager, Reliability Operations Maxim Integrated Products. All rights reserved.


    Original     		PDF MAX2042A MAX2042AETP+ JESD22-A114. 250mA JESD78. NHVWBQ002C, MAX2042

    B37940-K5220-J62

    Abstract: siemens rs 1016 B37940K5220J62 B54102 mmic-amplifier CGY120 B54102-A1471-J60 B37490-K5120-J62 0805CS-220XMBC MMIC marking CODE c4
    Text: SIEMENS GaAs MMIC CGY 120 Datasheet * Monolithic microwave IC MMIC-Amplifier for mobile communication * Variable gain amplifier for GSM/PCN applications * Gain Control range over 50dB * 50Q input and output matched * Low power consumption 'Operating voltage range: 2.7 to 6 V


    OCR Scan     		PDF Q62702-G44 Vcon55 B37940-K5220-J62 siemens rs 1016 B37940K5220J62 B54102 mmic-amplifier CGY120 B54102-A1471-J60 B37490-K5120-J62 0805CS-220XMBC MMIC marking CODE c4

    B54102

    Abstract: dg s22 B37940-K5220-J62
    Text: SIEMENS CGY 120 GaAs MMIC Datasheet * Monolithic microwave IC MMIC-Amplifier for mobile communication * Variable gain amplifier for GSM/PCN applications * Gain Control range over 50dB *5 0 i2 input and output matched * Low power consumption ‘ Operating voltage range: 2.7 to 6 V


    OCR Scan     		PDF Q62702-G44 235b05 A23SbGS CGY120 B54102 dg s22 B37940-K5220-J62

    siemens rs 1016

    Abstract: 012E3
    Text: SIEMENS CGY 120 GaAs MMIC • • • • • • • Monolithic microwave IC MMIC-Amplifier for mobile communication Variable gain amplifier for GSM/PCN applications Gain Control range over 50dB 50Q input and output matched Low power consumption Operating voltage range: 2.7 to 6 V


    OCR Scan     		PDF Q62702-G44 235LD5 fl235b05 siemens rs 1016 012E3