Untitled
Abstract: No abstract text available
Text: VCE IC = = 3300 V 1200 A ABB HiPakTM IGBT Module 5SNA 1200G330100 Doc. No. 5SYA1563-00 Apr.06 • Low-loss, rugged SPT chip-set • Smooth switching SPT chip-set for good EMC • High insulation package • High power density • AlSiC base-plate for high power
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Original
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1200G330100
5SYA1563-00
CH-5600
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PDF
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DO-204AC
Abstract: GI1-1200GP GI1-1400GP GI1-1600GP
Text: GI1-1200GP thru GI1-1600GP Vishay Semiconductors New Product formerly General Semiconductor Miniature High Voltage Glass Passivated Rectifier DO-204AC DO-15 Features 0.034 (0.86) 0.028 (0.71) Dia. * d e t n e t a P 1.0 (25.4) min. 0.300 (7.6) 0.230 (5.8)
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Original
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GI1-1200GP
GI1-1600GP
DO-204AC
DO-15)
MIL-S-19500
08-Apr-05
DO-204AC
GI1-1400GP
GI1-1600GP
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PDF
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DO-204AC
Abstract: GI1-1200GP GI1-1600GP JESD22-B102 J-STD-002
Text: GI1-1200GP thru GI1-1600GP Vishay General Semiconductor Miniature High Voltage Glass Passivated Rectifier FEATURES • Superectifier structure for high reliability application • Cavity-free glass-passivated junction d* e t n e Pat • Low forward voltage drop
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Original
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GI1-1200GP
GI1-1600GP
DO-204AC
DO-15)
MIL-S-19500
2002/95/EC
2002/96/EC
18-Jul-08
DO-204AC
GI1-1600GP
JESD22-B102
J-STD-002
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PDF
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8k83
Abstract: diode 6.L
Text: F 1200A . F 1200G .3 Axial leaded diode High efficiency fast silicion rectifier diode F 1200A . F 1200G Forward Current: 12 A Reverse Voltage: 50 to 400 V Preliminary Data Features < = 4
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Original
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1200G
1200G
8k83
diode 6.L
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PDF
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5SNA1200G450300
Abstract: 1200G450300 cosmi
Text: VCE IC = = 4500 V 1200 A ABB HiPakTM IGBT Module 5SNA 1200G450300 PRELIMINARY Doc. No. 5SYA 1401-00 Dec 08 • Ultra low-loss, rugged SPT+ chip-set • Smooth switching SPT+ chip-set for good EMC • Industry standard package • High power density • AlSiC base-plate for high power
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Original
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1200G450300
CH-5600
5SNA1200G450300
1200G450300
cosmi
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PDF
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IC 7400 configuration
Abstract: 5SNA1200G450300
Text: VCE IC = = 4500 V 1200 A ABB HiPakTM IGBT Module 5SNA 1200G450300 Doc. No. 5SYA 1401-01 Mar 09 • Ultra low-loss, rugged SPT+ chip-set • Smooth switching SPT+ chip-set for good EMC • Industry standard package • High power density • AlSiC base-plate for high power
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Original
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1200G450300
CH-5600
IC 7400 configuration
5SNA1200G450300
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PDF
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1200G450350
Abstract: 5SNA1200G450350
Text: VCE IC = = 4500 V 1200 A ABB HiPakTM IGBT Module 5SNA 1200G450350 Doc. No. 5SYA 1415-02 04-2012 Ultra low-loss, rugged SPT+ chip-set Smooth switching SPT+ chip-set for good EMC Industry standard package High power density AlSiC base-plate for high power cycling capability
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Original
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1200G450350
CH-5600
1200G450350
5SNA1200G450350
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PDF
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Untitled
Abstract: No abstract text available
Text: Coaxial Broadband Amplifier 50Ω Variable Gain ZFL-1200G+ 10 to 1200 MHz Features • wideband, 10 to 1200 MHz • rugged, shielded case • gain control range: 60 dB typ. • gain control voltage: 0 to +5V CASE STYLE: Y39 Connectors Model SMA ZFL-1200G+
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Original
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ZFL-1200G+
2002/95/EC)
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PDF
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GI1-1600GP
Abstract: No abstract text available
Text: GI1-1200GP thru GI1-1600GP Vishay General Semiconductor Miniature High Voltage Glass Passivated Rectifier FEATURES • Superectifier application SUPERECTIFIER structure for high reliability • Cavity-free glass-passivated junction • Low forward voltage drop
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Original
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GI1-1200GP
GI1-1600GP
MIL-S-19500
22-B106
AEC-Q101
2002/95/EC
2002/96/EC
DO-204AC
DO-15)
2011/65/EU
GI1-1600GP
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PDF
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Untitled
Abstract: No abstract text available
Text: VCE IC = = 4500 V 1200 A ABB HiPakTM IGBT Module 5SNA 1200G450350 Doc. No. 5SYA 1415-03 01-2014 • Ultra low-loss, rugged SPT+ chip-set Smooth switching SPT+ chip-set for good EMC Industry standard package High power density AlSiC base-plate for high power
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Original
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1200G450350
CH-5600
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PDF
|
Untitled
Abstract: No abstract text available
Text: VCE IC = = 3300 V 1200 A ABB HiPakTM IGBT Module 5SNA 1200G330100 Doc. No. 5SYA1563-03 01-2014 • Low-loss, rugged SPT chip-set Smooth switching SPT chip-set for good EMC High insulation package High power density AlSiC base-plate for high power cycling
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Original
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1200G330100
5SYA1563-03
UL1557,
E196689
CH-5600
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PDF
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GI1-1600GP
Abstract: DO-204AC GI1-1200GP J-STD-002
Text: GI1-1200GP thru GI1-1600GP Vishay General Semiconductor Miniature High Voltage Glass Passivated Rectifier FEATURES • Superectifier application SUPERECTIFIER structure for high reliability • Cavity-free glass-passivated junction • Low forward voltage drop
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Original
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GI1-1200GP
GI1-1600GP
MIL-S-19500
22-B106
DO-204AC
DO-15)
AEC-Q101
2002/95/EC
2002/96/EC
11-Mar-11
GI1-1600GP
DO-204AC
J-STD-002
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PDF
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1200G330100
Abstract: No abstract text available
Text: VCE IC = = 3300 V 1200 A ABB HiPakTM IGBT Module 5SNA 1200G330100 Doc. No. 5SYA1563-01 04-2012 Low-loss, rugged SPT chip-set Smooth switching SPT chip-set for good EMC High insulation package High power density AlSiC base-plate for high power cycling capability
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Original
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1200G330100
5SYA1563-01
CH-5600
1200G330100
|
PDF
|
Untitled
Abstract: No abstract text available
Text: VCE IC = = 4500 V 1200 A ABB HiPakTM IGBT Module 5SNA 1200G450350 Doc. No. 5SYA 1415-03 01-2014 • Ultra low-loss, rugged SPT+ chip-set Smooth switching SPT+ chip-set for good EMC Industry standard package High power density AlSiC base-plate for high power cycling
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Original
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1200G450350
UL1557,
E196689
CH-5600
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PDF
|
|
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Untitled
Abstract: No abstract text available
Text: VCE IC = = 4500 V 1200 A ABB HiPakTM IGBT Module 5SNA 1200G450300 Doc. No. 5SYA 1401-03 04-2012 Ultra low-loss, rugged SPT+ chip-set Smooth switching SPT+ chip-set for good EMC Industry standard package High power density AlSiC base-plate for high power cycling capability
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Original
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1200G450300
CH-5600
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PDF
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5SNA1200G330100
Abstract: 1200G330100
Text: VCE IC = = 3300 V 1200 A ABB HiPakTM IGBT Module 5SNA 1200G330100 PRELIMINARY Doc. No. 5SYA 1563-00 Feb.05 • Low-loss, rugged SPT chip-set • Smooth switching SPT chip-set for good EMC • High insulation package • High power density • AlSiC base-plate for high power
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Original
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1200G330100
IF30100
CH-5600
5SNA1200G330100
1200G330100
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PDF
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Untitled
Abstract: No abstract text available
Text: Drawing Number – WD5 Outline Number – 100A361 Weight 1200g Westcode Customer Services email: wsl.sales@westcode.com Telephone: +44 0 1249 444524 Fax: +44 (0)1249 659448
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Original
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100A361
1200g
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PDF
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Untitled
Abstract: No abstract text available
Text: Drawing Number – W42 Outline Number – 100A310 Weight 1200g Westcode Customer Services email: wsl.sales@westcode.com Telephone: +44 0 1249 444524 Fax: +44 (0)1249 659448
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Original
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100A310
1200g
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PDF
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Untitled
Abstract: No abstract text available
Text: Drawing Number – W44 Outline Number – 101A340 Weight 1200g Westcode Customer Services email: wsl.sales@westcode.com Telephone: +44 0 1249 444524 Fax: +44 (0)1249 659448
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Original
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101A340
1200g
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PDF
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Untitled
Abstract: No abstract text available
Text: TOSHIBA SILICON DIFFUSED TYPE 1200GXHH22 High Speed Rectifier Applications • Repetitive Peak Reverse Voltage: VRRM=4500V • Average Forward Current: lF AV =1200A • Double Side Cooling Maximum Ratings CHARACTERISTIC SYMBOL RATINGS UNIT Repetitive Peak Reverse Voltage
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OCR Scan
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1200GXHH22
1300g
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PDF
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TENTATIVE 1200GXHH24 TOSHIBA FAST RECOVERY DIODE SILICON DIFFUSED TYPE 1 2 0 0 G X H H24 HIGH SPEED RECTIFIER APPLICATIONS • • • Repetitive Peak Reverse Voltage : Vrrm = 4500V Average Forward Current : Ijr AV = 1200A Double Side Cooling MAXIMUM RATINGS
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OCR Scan
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1200GXHH24
961001EAA1
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PDF
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toshiba gto
Abstract: No abstract text available
Text: TOSHIBA TENTATIVE 1200GXHH25 TOSHIBA FAST RECOVERY DIODE SILICON DIFFUSED TYPE 1 2 0 0 G X H H25 Unit in mm HIGH SPEED RECTIFIER APPLICATIONS • • • Repetitive Peak Reverse Voltage : Vrrm —4500V Average Forward Current : Ijr AV = 1200A Double Side Cooling
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OCR Scan
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1200GXHH25
--4500V
961001EAA1
--2500A,
toshiba gto
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PDF
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toshiba gto
Abstract: No abstract text available
Text: TOSHIBA TENTATIVE 1200GXHH23 TOSHIBA FAST RECOVERY DIODE SILICON DIFFUSED TYPE 1 2 0 0 G X H H23 HIGH SPEED RECTIFIER APPLICATIONS • • • Repetitive Peak Reverse Voltage : Vrrm = 4500V Average Forward Current : Ijr AV = 1200A Double Side Cooling MAXIMUM RATINGS
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OCR Scan
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1200GXHH23
961001EAA1
toshiba gto
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PDF
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1200GXHH22
Abstract: No abstract text available
Text: 1200GXHH22 TOSHIBA TOSHIBA FAST RECOVERY RECTIFIER SILICON DIFFUSED TYPE 1 2 0 0 G X H H22 HIGH SPEED RECTIFIER APPLICATIONS • • • Repetitive Peak Reverse Voltage : V r r m = 4500 V Average Forward Current : If AV = 1200 A Double Side Cooling MAXIMUM RATINGS
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OCR Scan
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1200GXHH22
200GXH
125-C
1200GXHH22
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PDF
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