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    1200V TO247 MOSFET Search Results

    1200V TO247 MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    1200V TO247 MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    10 AMP 1200V RECTIFIER DIODE

    Abstract: 600V 25A Ultrafast Diode 1200v diode to247 ultrafast diode 10a 300v smps 450W ULTRA fast rectifier diode 30A 200V cathode common ULTRA fast rectifier diode 30A 200V anode common 1200v 30A to247 Diode C3 1200v 25A to247
    Text: SML25EUZ06B Enhanced Ultrafast Recovery Diode 600 Volt, 25 Amp Back of Case Cathode TECHNOLOGY The planar passivated and enhanced ultrafast recovery SML 25EUZ06B diode features a triple charge control action utilising Semelab’s Graded Buffer Zone technology combined with


    Original     		PDF SML25EUZ06B 25EUZ06B SML30SUZ03S SML30SUZ03SC SML30SUZ12B SML30SUZ12BC SML30SUZ12JD SML30SUZ12S SML30SUZ12TC OT227 10 AMP 1200V RECTIFIER DIODE 600V 25A Ultrafast Diode 1200v diode to247 ultrafast diode 10a 300v smps 450W ULTRA fast rectifier diode 30A 200V cathode common ULTRA fast rectifier diode 30A 200V anode common 1200v 30A to247 Diode C3 1200v 25A to247

    sot-227 footprint

    Abstract: VRF2933 SP6-P ARF1511 DRF1200 APT35GP120JDQ2 ARF521 TO-247 smps welder inverter APTGT25DA120D1G
    Text: Power Semiconductors Power Modules & RF Power MOSFETs 2006 Power Products Group 1 About Microsemi Microsemi Power Products Group was created in 2006 with the acquisition of Advanced Power Technology, Inc., a company at the forefront of power semiconductor technology since its founding in 1984.


    Original     		PDF

    IRU1239SC

    Abstract: iru1239 Full-bridge IR2110 Class-D ir2010 PWM IR2112 IRF540 ir21065 full bridge ir2110 h-bridge irfz44n IRVCM10A 600V 300A igbt dc to dc boost converter
    Text: SHENZHEN SHOUHE TECHNOLOGY CO., LTD. TEL: 0755-8380 8450 FAX: 0755-8380 8425 Part Information PartNo Function Line Pkg 100MT160PAPBF Discrete IRCI Module MTP 100MT160PA Discrete IRCI Module MTP 100MT160PBPBF Discrete IRCI Module MTP IRCI Module MTP IRCI Module MTK


    Original     		PDF 100MT160PAPBF 100MT160PA 100MT160PBPBF IRU1239SC iru1239 Full-bridge IR2110 Class-D ir2010 PWM IR2112 IRF540 ir21065 full bridge ir2110 h-bridge irfz44n IRVCM10A 600V 300A igbt dc to dc boost converter

    Untitled

    Abstract: No abstract text available
    Text: APT1201R5BVFR APT1201R5SVFR 1.500Ω Ω 1200V 10A POWER MOS V TO-247 Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		PDF APT1201R5BVFR APT1201R5SVFR O-247 O-247 APT1201R5BVFR

    APT1201R5BFVR

    Abstract: APT1201R5BVFR APT1201R5SFVR
    Text: APT1201R5BFVR APT1201R5SFVR 1.500Ω Ω 1200V 10A POWER MOS V TO-247 Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		PDF APT1201R5BFVR APT1201R5SFVR O-247 O-247 APT1201R5BVFR APT1201R5BFVR APT1201R5SFVR

    single phase inverter IGBT

    Abstract: wind inverter Thunderbolt buck 800v igbt single phase inverter mosfet single phase full bridge inverter mosfet power inverter 500w single phase inverter SiC IGBT High Power Modules APT50GT60BRDQ2G
    Text: Product Solutions for Inverters in Distributed Power Markets Solar, Wind, UPS 1 Power Semiconductors for Inverters Your Inverter Requirements… Our Business • Comprehensive range of power semiconductor products to meet the needs of 500W to 500kW inverters


    Original     		PDF 500kW APT60N60BCSG 00E-07 00E-06 50E-06 single phase inverter IGBT wind inverter Thunderbolt buck 800v igbt single phase inverter mosfet single phase full bridge inverter mosfet power inverter 500w single phase inverter SiC IGBT High Power Modules APT50GT60BRDQ2G

    20n120c3d

    Abstract: HGTG20N120C3 LD26TM
    Text: HGTG20N120C3D S E M I C O N D U C T O R 45A, 1200V, UFS Series N-Channel IGBT April 1998 Features Description • 45A, 1200V TC = 25oC The HGTG20N120C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor.


    Original     		PDF HGTG20N120C3D HGTG20N120C3D 150oC. 20N120C3D 1-800-4-HARRIS 20n120c3d HGTG20N120C3 LD26TM

    15N120C3D

    Abstract: 15N120C3 HGTG15N120C3D LD26 RHRP15120 15N120C
    Text: HGTG15N120C3D S E M I C O N D U C T O R 35A, 1200V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode May 1997 Features Description • 35A, 1200V at TC = 25oC The HGTG15N120C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and


    Original     		PDF HGTG15N120C3D HGTG15N120C3D 150oC. 150oC 350ns 1-800-4-HARRIS 15N120C3D 15N120C3 LD26 RHRP15120 15N120C

    APT1201R5BVFR

    Abstract: APT1201R5SVFR
    Text: APT1201R5BVFR APT1201R5SVFR 1.500Ω Ω 1200V 10A POWER MOS V TO-247 Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		PDF APT1201R5BVFR APT1201R5SVFR O-247 O-247 APT1201R5BVFR APT1201R5SVFR

    mosfet 1200V 40A

    Abstract: igbt 20A 1200v Igbts guide mosfet 1200V 30a smps HGTG11N120CND MOSFET 1200v 30a HGTD3N60A4S HGTP20N60A4 igbt 1200V 60A HGTD3N60B3S
    Text: LC-96585.5 2-sided r2 8/24/00 7:22 PM Page 1 HOLE PUNCH THIS EDGE www.intersil.com Industrial IGBT family features a range of 600V Punch Through And 1200V Non Punch Through NPT . Solutions and Support 600V IGBT SELECTION GUIDE PACKAGE USABLE CURRENT TO-252AA


    Original     		PDF LC-96585 O-252AA HGTD3N60A4S O-220AB O-263AB O-247 O-264AA O-268AA HGTD3N60C3S HGT1S3N60A4S* mosfet 1200V 40A igbt 20A 1200v Igbts guide mosfet 1200V 30a smps HGTG11N120CND MOSFET 1200v 30a HGTD3N60A4S HGTP20N60A4 igbt 1200V 60A HGTD3N60B3S

    15N120C3D

    Abstract: HGTG15N120C3D LD26 RHRP15120 15N120C
    Text: HGTG15N120C3D 35A, 1200V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode May 1997 Features Description • 35A, 1200V at TC = 25oC The HGTG15N120C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance


    Original     		PDF HGTG15N120C3D HGTG15N120C3D 150oC. 150oC 350ns 15N120C3D LD26 RHRP15120 15N120C

    APT1201R6BVFR

    Abstract: APT1201R6SVFR
    Text: APT1201R6BVFR APT1201R6SVFR 1200V POWER MOS V FREDFET 8A 1.600Ω BVFR TO-247 Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		PDF APT1201R6BVFR APT1201R6SVFR O-247 O-247 APT1201R6BVFR 100mS APT1201R6SVFR

    Untitled

    Abstract: No abstract text available
    Text: VCES = 1600 V IC25 = 75 A VCE sat = 2.5 V IXGH 25N160 IXGT 25N160 High Voltage IGBT For Capacitor Discharge Applications Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ


    Original     		PDF 25N160 IC110 O-247 O-2684.

    102N06

    Abstract: DE275X2-102N06A PLUS247 501N2 DE275-501N16A DE475-501N44A H12N50 DE475-102N21A ISOPLUS247 IXFX
    Text: 500KHz-82MHz POWER MOSFETS O SWITCH MODE POWER SUPPLIES & RF GENERATORS January 2003 The IXYS RF Switch Mode MOSFET family is ideal for applications requiring fast switching including laser driver, induction heating, switch mode power supplies and other non-linear industrial applications. An extensive product


    Original     		PDF 500KHz-82MHz O-247 PLUS247 ISOPLUS247 102N06 DE275X2-102N06A PLUS247 501N2 DE275-501N16A DE475-501N44A H12N50 DE475-102N21A ISOPLUS247 IXFX

    Untitled

    Abstract: No abstract text available
    Text: APT1201R6BVFR APT1201R6SVFR 8A 1.600Ω 1200V POWER MOS V FREDFET BVFR TO-247 Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		PDF APT1201R6BVFR APT1201R6SVFR O-247 O-247 APT1201R6BVFR Continu10 100mS

    smps with uc3842 and tl431

    Abstract: mc34063 step down with mosfet mc34063 step up with mosfet MC34063 MOSFET UC3842 step up converter mc34063 step down 5a mc34063 step up 5a MOSFET 1000v 30a uc3842 step down mc34063 triple output
    Text: POWER SUPPLY EQUIPMENT STMicroelectronics SOLUTIONS Power Converter Block Diagram Mains Mains Rectification Conditioning Mains Rectification / Inrush Current Limitation Mains Conditioning Primary Secondary Primary Secondary RECOMMENDED DEVICES MAIN FEATURES


    Original     		PDF BF3510TV /BF3506TV BHA/K3012TV BTAxx600CW AVS08 L6560/A L6561 L4981A/B ST90T40 /W/P/HxxNB50/60/80 smps with uc3842 and tl431 mc34063 step down with mosfet mc34063 step up with mosfet MC34063 MOSFET UC3842 step up converter mc34063 step down 5a mc34063 step up 5a MOSFET 1000v 30a uc3842 step down mc34063 triple output

    .25N16

    Abstract: 25N160
    Text: High Voltage IGBT VCES = 1600 V IC25 = 75 A VCE sat = 2.5 V IXGH 25N160 IXGT 25N160 For Capacitor Discharge Applications Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ


    Original     		PDF 25N160 IC110 O-247 O-268 .25N16 25N160

    HGTG20N120C3D

    Abstract: 20N120C3D 12V 200A Relay LD26
    Text: HGTG20N120C3D Data Sheet 45A, 1200V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG20N120C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input


    Original     		PDF HGTG20N120C3D HGTG20N120C3D 150oC. 20N120C3D 12V 200A Relay LD26

    transistor 12n60c

    Abstract: 12N60c equivalent 30N120D1 13N50 equivalent 12n60c MOSFET 1200v 30a MOSFET 1000v 30a 30n120d CS20-22MOF1 12N60c MOSFET
    Text: ISOPLUS Summary Title Page Isolated Discrete Packages A4 - 1 ISOPLUS247TM A4 - 2 ISOPLUS i4-PACTM A4 - 3 ISOPLUS247 – ISOPLUS i4-PACTM Isolated Discrete Packages ISOPLUS247™ is the DCB isolated version of the PLUS247™-package TO247 without a mounting hole . The design


    Original     		PDF ISOPLUS247TM ISOPLUS247TM PLUS247TM-package FBO16-08N FBE22-06N1 21-05QC 22-08N 75-01F 21-08i01 transistor 12n60c 12N60c equivalent 30N120D1 13N50 equivalent 12n60c MOSFET 1200v 30a MOSFET 1000v 30a 30n120d CS20-22MOF1 12N60c MOSFET

    MOSFET 1200v 30a

    Abstract: Rad hard for Harris 32v smps RHRU100120 RHRG3060c harris mur1520 MUR820 RURD420 RURP820C
    Text: 41892.6 - FO-011 SELECTION 11/19/98 10:57 AM Page 1 Harris Semiconductor-An Industry Leader Harris Semiconductor comprises one sector of Harris Product Line Selection Corporation, an international communications and electronics For More Information: Harris On-Line Services:


    Original     		PDF FO-011 1-800-4-HARRIS MOSFET 1200v 30a Rad hard for Harris 32v smps RHRU100120 RHRG3060c harris mur1520 MUR820 RURD420 RURP820C

    Untitled

    Abstract: No abstract text available
    Text: HGTG20N120CN S em iconductor October 1998 Data Sheet 63A, 1200V, NPT Series N-Channel IGBT Features The HGTG20N120CN is a Non-Punch Through IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device


    OCR Scan     		PDF HGTG20N120CN HGTG20N120CN TA49289. 1-800-4-HARRIS

    Untitled

    Abstract: No abstract text available
    Text: HGTG15N120C3D S E M I C O N D U C T O R " " m • w ■ mM v 35A, 1200V, UFS Series N-C hannel IGBT w ith A nti-Parallel H yperfast Diode May 1997 Features Description • 35A, 1200V at T c = 25°C The HGTG15N120C3D is a MOS gated high voltage switch­ ing device combining the best features of MOSFETs and


    OCR Scan     		PDF HGTG15N120C3D HGTG15N120C3D 350ns 1-800-4-HARRIS

    Untitled

    Abstract: No abstract text available
    Text: HGTG20N120CN Semiconductor Data Sheet October 1998 63A, 1200V, NPT Series N-Channel IGBT Features The HGTG20N120CN is a Non-Punch Ih ro u g h IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device


    OCR Scan     		PDF HGTG20N120CN HGTG20N120CN 1-800-4-HARRIS

    Untitled

    Abstract: No abstract text available
    Text: HGTG30N120CN S em iconductor March 1999 Data Sheet 75A, 1200V, NPT Series N-Channel IGBT Features The HGTG30N120CN is a Non-Punch Through NPT IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device


    OCR Scan     		PDF HGTG30N120CN HGTG30N120CN 350ns 1-800-4-HARRIS