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    IXFX Price and Stock

    Littelfuse Inc IXFX64N60P

    MOSFET N-CH 600V 64A PLUS247-3
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    DigiKey IXFX64N60P Tube 787 1
    • 1 $16.6
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    Newark IXFX64N60P Bulk 300
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    Littelfuse Inc IXFX180N25T

    MOSFET N-CH 250V 180A PLUS247-3
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    DigiKey IXFX180N25T Tube 509 1
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    Newark IXFX180N25T Bulk 300
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    Littelfuse Inc IXFX100N65X2

    MOSFET N-CH 650V 100A PLUS247-3
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    DigiKey IXFX100N65X2 Tube 497 1
    • 1 $19.56
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    Newark IXFX100N65X2 Bulk 220 1
    • 1 $16.93
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    Littelfuse Inc IXFX300N20X3

    MOSFET N-CH 200V 300A PLUS247-3
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    DigiKey IXFX300N20X3 Tube 495 1
    • 1 $32.86
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    Littelfuse Inc IXFX64N50Q3

    MOSFET N-CH 500V 64A PLUS247-3
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    DigiKey IXFX64N50Q3 Tube 320 1
    • 1 $25.46
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    Newark IXFX64N50Q3 Bulk 300
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    IXFX Datasheets (115)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IXFX100N25 IXYS 250V HiPerFET power MOSFET Original PDF
    IXFX100N65X2 IXYS Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 650V 100A PLUS247 Original PDF
    IXFX120N20 IXYS 200V HiPerFET power MOSFET Original PDF
    IXFX120N20 IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 200V 120A PLUS247 Original PDF
    IXFX120N25 IXYS 250V HiPerFET power MOSFET Original PDF
    IXFX120N25P IXYS PolarHT HiPerFET Power MOSFET Original PDF
    IXFX120N30P3 IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 300V 120A TO-247 Original PDF
    IXFX120N30T IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 120A 300V PLUS247 Original PDF
    IXFX120N65X2 IXYS Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 650V 120A PLUS247 Original PDF
    IXFX12N90Q IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 900V 12A PLUS247 Original PDF
    IXFX140N25T IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 140A 250V PLUS247 Original PDF
    IXFX140N30P IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 300V 140A PLUS 247 Original PDF
    IXFX14N100 IXYS 1000V HiPerFET power MOSFET Original PDF
    IXFX150N15 IXYS 150V HiPerFET power MOSFET Original PDF
    IXFX150N30P3 IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 300V 150A TO-247 Original PDF
    IXFX15N100 IXYS 1000V HiPerFET power MOSFET Original PDF
    IXFX160N30T IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 160A 300V PLUS247 Original PDF
    IXFX16N90 IXYS HiPerFET Power MOSFET Original PDF
    IXFX170N20P IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 200V 170A PLUS247 Original PDF
    IXFX170N20T IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 170A 200V PLUS247 Original PDF

    IXFX Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    34N80

    Abstract: IXFN34N80 ixfx34n80
    Text: HiPerFETTM Power MOSFETs IXFK 34N80 IXFX 34N80 VDSS ID25 RDS on Single MOSFET Die = 800 V = 34 A = 0.24 W trr £ 250 ns Avalanche Rated Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW


    Original     		34N80 247TM 34N80 IXFN34N80 ixfx34n80 PDF

    62n25

    Abstract: 62n25 mosfet 62n2 247TM
    Text: Advance Technical Information HiPerFETTM Power MOSFETs IXFX 62N25 IXFK 62N25 VDSS ID25 RDS on Single MOSFET Die trr ≤ 250 ns Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 250 250 V V VGS VGSM Continuous Transient


    Original     		62N25 247TM O-264 728B1 62n25 62n25 mosfet 62n2 247TM PDF

    120N25

    Abstract: ID104
    Text: Advance Technical Information HiPerFETTM Power MOSFETs IXFX 120N25 IXFK 120N25 VDSS ID25 RDS on Single MOSFET Die = 250 V = 120 A Ω = 22 mΩ trr ≤ 250 ns Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ


    Original     		120N25 ID104 247TM 728B1 120N25 ID104 PDF

    100N25

    Abstract: ID104
    Text: HiPerFETTM Power MOSFETs IXFX 100N25 IXFK 100N25 VDSS ID25 RDS on Single MOSFET Die = 250 V = 100 A Ω = 27 mΩ trr ≤ 250 ns Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 250 250 V V VGS VGSM


    Original     		100N25 ID104 247TM capa26 100N25 ID104 PDF

    32N50Q

    Abstract: 125OC
    Text: VDSS IXFK 32N50Q IXFX 32N50Q HiPerFETTM Power MOSFETs Q-Class trr ≤ 250 ns Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 500 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 IDM 32 120 A


    Original     		32N50Q 247TM 125OC 728B1 123B1 728B1 065B1 32N50Q 125OC PDF

    Untitled

    Abstract: No abstract text available
    Text: IXFX 21N100F IXFK 21N100F HiPerRFTM Power MOSFETs F-Class: MegaHertz Switching VDSS = 1000 V ID25 = 21 A RDS on = 0.50 Ω trr ≤ 250 ns Single MOSFET Die N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr PLUS 247TM (IXFX)


    Original     		21N100F 247TM 728B1 PDF

    IXFK240N15T2

    Abstract: IXFX240N15T2 PLUS247
    Text: Advance Technical Information IXFK240N15T2 IXFX240N15T2 GigaMOSTM TrenchT2 HiperFETTM Power MOSFET VDSS ID25 = = 150V 240A Ω 5.2mΩ 140ns RDS on ≤ ≤ trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-264 (IXFK) Symbol Test Conditions


    Original     		IXFK240N15T2 IXFX240N15T2 140ns O-264 240N15T2 IXFK240N15T2 IXFX240N15T2 PLUS247 PDF

    80N50P

    Abstract: IXFK 80N50P PLUS247
    Text: Advance Technical Information PolarHVTM HiPerFET Power MOSFET IXFK 80N50P IXFX 80N50P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = 500 V = 80 A Ω < 65 mΩ < 200 ns TO-264 AA (IXFK) Symbol Test Conditions Maximum Ratings


    Original     		80N50P O-264 80N50P IXFK 80N50P PLUS247 PDF

    200N10P

    Abstract: IXFN200N10P TO-227B IXFX200N10P PLUS247 IXFN200N10P IXYS
    Text: Advanced Technical Information PolarTM HiPerFET Power MOSFET VDSS ID25 IXFN 200N10P IXFK 200N10P IXFX 200N10P RDS on = 100 V = 200 A Ω = 7.5 mΩ N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ


    Original     		200N10P OT-227 E153432 IXFX200N10P IXFN200N10P 200N10P IXFN200N10P TO-227B IXFX200N10P PLUS247 IXFN200N10P IXYS PDF

    360N10T

    Abstract: PLUS-247 IXFK360N10T IXFX360N10T PLUS247
    Text: Advance Technical Information IXFK360N10T IXFX360N10T GigaMOSTM Trench HiperFETTM Power MOSFET VDSS ID25 = = 100V 360A Ω 2.9mΩ 130ns RDS on ≤ ≤ trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-264 (IXFK) Symbol Test Conditions


    Original     		IXFK360N10T IXFX360N10T 130ns O-264 360N10T PLUS-247 IXFK360N10T IXFX360N10T PLUS247 PDF

    Untitled

    Abstract: No abstract text available
    Text: Advanced Technical Information IXFX 90N30 IXFK 90N30 HiPerFETTM Power MOSFETs VDSS ID25 RDS on Single MOSFET Die trr £ 250 ns Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 300 300 V V VGS VGSM Continuous Transient


    Original     		90N30 90N30 ID104 247TM O-264 PDF

    Siemens DIODE E 1240

    Abstract: IXFK80N60P3 IXFX80N60P3
    Text: Advance Technical Information IXFK80N60P3 IXFX80N60P3 Polar3TM HiPerFETTM Power MOSFET VDSS ID25 TO-264 IXFK Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ 600 600 V V VGSS VGSM Continuous Transient ± 30 ± 40 V V


    Original     		IXFK80N60P3 IXFX80N60P3 O-264 250ns PLUS247 80N60P3 Siemens DIODE E 1240 IXFX80N60P3 PDF

    120N20

    Abstract: No abstract text available
    Text: IXFX 120N20 HiPerFET TM Power MOSFETs VDSS ID25 RDS on Single MOSFET Die = = = 200 V 120 A 17 mW trr £ 250 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 200 200 V V VGS


    Original     		120N20 120N20 PDF

    Untitled

    Abstract: No abstract text available
    Text: Advanced Technical Information HiPerFETTM Power MOSFETs IXFK 24N100 IXFX 24N100 VDSS ID25 RDS on Single MOSFET Die Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW Maximum Ratings VGS VGSM Continuous Transient ID25 IDM IAR 1000


    Original     		24N100 24N100 247TM O-264 PDF

    Untitled

    Abstract: No abstract text available
    Text: Advance Technical Information IXFK260N17T IXFX260N17T GigaMOSTM Power MOSFET VDSS ID25 = = 170V 260A Ω 6.5mΩ 200ns RDS on ≤ ≤ trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-264 (IXFK) Symbol Test Conditions Maximum Ratings


    Original     		IXFK260N17T IXFX260N17T 200ns O-264 -55ig. 260N17T PDF

    120N20

    Abstract: No abstract text available
    Text: HiPerFET TM Power MOSFETs IXFX 120N20 IXFK 120N20 VDSS ID25 RDS on Single MOSFET Die = 200 V = 120 A Ω = 17 mΩ trr ≤ 250 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ


    Original     		120N20 120N20 ID104 247TM O-264 125OC 728B1 PDF

    Untitled

    Abstract: No abstract text available
    Text: IXFX 1806 HiPerFET TM Power MOSFETs VDSS ID25 RDS on Single MOSFET Die = = = 500 V 53 A 90 mW trr £ 250 ns Preliminary data sheet Maximum Ratings PLUS 247TM (IXFX) Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW 500


    Original     		247TM PDF

    Untitled

    Abstract: No abstract text available
    Text: Advance Technical Information PolarHVTM HiPerFET Power MOSFET IXFK 80N50P IXFX 80N50P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = 500 V = 80 A Ω < 75 mΩ < 200 ns TO-264 AA (IXFK) Symbol Test Conditions Maximum Ratings


    Original     		80N50P 80N50P O-264 PLUS247 PDF

    z 607 ma

    Abstract: No abstract text available
    Text: IXFK 24N100 IXFX 24N100 HiPerFETTM Power MOSFETs VDSS ID25 RDS on Single MOSFET Die trr ≤ 250 ns Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Maximum Ratings VGS VGSM Continuous Transient ID25 IDM IAR 1000 1000


    Original     		24N100 24N100 247TM O-264 z 607 ma PDF

    64N50

    Abstract: No abstract text available
    Text: Advance Technical Information IXFK64N50Q3 IXFX64N50Q3 HiperFETTM Power MOSFETs Q3-Class VDSS ID25 = = ≤ ≤ RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier 500V 64A Ω 85mΩ 250ns TO-264 (IXFK) Symbol Test Conditions Maximum Ratings


    Original     		O-264) O-264 PLUS247 PLUS247) IXFK64N50Q3 IXFX64N50Q3 250ns O-264 PLUS247 64N50 PDF

    Untitled

    Abstract: No abstract text available
    Text: Advanced Technical Information HiPerFETTM Power MOSFETs IXFK 180N06 IXFX 180N06 VDSS ID25 RDS on Single Die MOSFET = 60 V = 180 A = 5 mW trr £ 200 ns Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW VGS


    Original     		180N06 180N06 247TM O-264 PDF

    ixfk32n80

    Abstract: No abstract text available
    Text: Preliminary Technical Information IXFK32N80Q3 IXFX32N80Q3 HiperFETTM Power MOSFETs Q3-Class VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 800 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		O-264) O-264 PLUS247 PLUS247) IXFK32N80Q3 IXFX32N80Q3 300ns O-264 ixfk32n80 PDF

    Untitled

    Abstract: No abstract text available
    Text: Advance Technical Information IXFK24N100Q3 IXFX24N100Q3 HiperFETTM Power MOSFETs Q3-Class VDSS ID25 = = ≤ ≤ RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier 1000V 24A Ω 440mΩ 300ns TO-264 (IXFK) Symbol Test Conditions Maximum Ratings


    Original     		IXFK24N100Q3 IXFX24N100Q3 300ns O-264 PLUS247 24N100Q3 PDF

    16N90

    Abstract: No abstract text available
    Text: IXFH16N90 IXFX16N90 HiPerFET Power MOSFETs V DSS I D25 D DS on N-Channel Enhancement Mode High dv/dt, Lowtrr, HDMOS™ Family = 900 V = 16 A = 0.65 Q trr < 200 ns Prelim inary data Symbol V DSS v™ V GS v GS* Test Conditions T, = 25°C to 150°C T,J = 25°C to 150°C;’ RGS


    OCR Scan     		IXFH16N90 IXFX16N90 O-247 247TM 16N90 PDF