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    1201D Search Results

    1201D Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    DAC1201D125HL-C18 Renesas Electronics Corporation Dual 12-bit DAC, up to 125 Msps Visit Renesas Electronics Corporation
    DAC1201D125-DB Renesas Electronics Corporation DAC1201D125 Visit Renesas Electronics Corporation
    DAC1201D125HL-C1 Renesas Electronics Corporation Dual 12-bit DAC, up to 125 Msps Visit Renesas Electronics Corporation
    TPS561201DDCR Texas Instruments 4.5V to 17V Input, 1A Synchronous Step-Down Voltage Regulator in 6-pin SOT-23 6-SOT-23-THIN -40 to 125 Visit Texas Instruments Buy
    TPS61201DRCT Texas Instruments 0.3V Input, 3.3V Output Voltage Boost Converter with 1.3A Switches and ''Down Mode'' in a 3x3 QFN 10-VSON -40 to 85 Visit Texas Instruments Buy
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    1201D Price and Stock

    KOA Speer Electronics Inc RK73G1ETTP1201D

    RES 1.2K OHM 0.5% 1/10W 0402
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey RK73G1ETTP1201D Digi-Reel 17,447 1
    • 1 $0.29
    • 10 $0.15
    • 100 $0.0883
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    RK73G1ETTP1201D Cut Tape 17,447 1
    • 1 $0.29
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    • 100 $0.0883
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    Mouser Electronics RK73G1ETTP1201D 11,238
    • 1 $0.33
    • 10 $0.278
    • 100 $0.109
    • 1000 $0.051
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    Texas Instruments TPS561201DDCT

    IC REG BUCK ADJ 1A SOT23
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    DigiKey TPS561201DDCT Cut Tape 8,584 1
    • 1 $1.06
    • 10 $0.763
    • 100 $0.6076
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    TPS561201DDCT Digi-Reel 8,584 1
    • 1 $1.06
    • 10 $0.763
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    TPS561201DDCT Reel 8,250 250
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    Mouser Electronics TPS561201DDCT 1,608
    • 1 $0.96
    • 10 $0.652
    • 100 $0.455
    • 1000 $0.447
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    Ameya Holding Limited TPS561201DDCT 191,879
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    Chip1Stop TPS561201DDCT Cut Tape 221
    • 1 $0.46
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    Win Source Electronics TPS561201DDCT 159,885
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    Cvilux Corporation CF31201D0R0-05-NH

    CONN FFC BOTTOM 20POS 0.5MM R/A
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    DigiKey CF31201D0R0-05-NH Digi-Reel 5,803 1
    • 1 $0.35
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    CF31201D0R0-05-NH Cut Tape 5,803 1
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    • 100 $0.2051
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    Susumu Co Ltd ATS2012-01DB-FD-T05

    HIGH FREQUENCY CHIP ATTENUATOR,
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    DigiKey ATS2012-01DB-FD-T05 Digi-Reel 989 1
    • 1 $5.73
    • 10 $4.385
    • 100 $3.4916
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    ATS2012-01DB-FD-T05 Cut Tape 989 1
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    ATS2012-01DB-FD-T05 Reel 500 500
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    Bulgin MAV0120-1D

    SWITCH PUSHBUTTON SPST-NO 2A 36V
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    DigiKey MAV0120-1D Tray 35 1
    • 1 $23.99
    • 10 $20.694
    • 100 $17.8415
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    Find more 1201D price and stock on Findchips.com

    1201D Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    transistor cross reference

    Abstract: No abstract text available
    Text: Skip to content | | | Products By Type Connectors Electromechanical Components Electronic Modules Fiber Optics Filters Identification & Labeling Passive Components Power Sources RF & Microwave Products Tooling Products Touch Screen Displays Tubing, Molded and Harnessing Products


    Original     		PDF 2000Hz transistor cross reference

    diode cross reference

    Abstract: IN5408 equivalent DIOTEC Electronics IN5408 diode 1N4008 PBL302 rgp20 17 diode rectifier 1N4000 1n4004 1n4002 RP602 PBP205
    Text: DIOTEC ELECTRONICS CORPORATION PRODUCT GUIDE TRUE VOID FREE VACUUM DIE SOLDERING SOFT GLASS DIODES HIGH VOLTAGE ULTRA FAST RECOVERY DISH DIODES TVS PRESS FIT WEB SITE: www.diotec-usa.com E-MAIL: Support@diotec-usa.com DIOTEC ELECTRONICS CORP. THE RECTIFIER SPECIALISTS


    Original     		PDF

    c151A

    Abstract: FDMS3602S
    Text: Preliminary Datasheet FDMS3602S Dual N-Channel PowerTrench MOSFET N-Channel: 25 V, 30 A, 5.6 mΩ N-Channel: 25 V, 40 A, 2.2 mΩ Features General Description Q1: N-Channel This device includes two specialized N-Channel MOSFETs in a „ Max rDS on = 5.6 mΩ at VGS = 10 V, ID = 15 A


    Original     		PDF FDMS3602S c151A FDMS3602S

    Untitled

    Abstract: No abstract text available
    Text: FDMS7606 Dual N-Channel PowerTrench MOSFET Q1: 30 V, 12 A, 11.4 mΩ Q2: 30 V, 22 A, 11.6 mΩ Features General Description Q1: N-Channel This device includes two specialized N-Channel MOSFETs in a ̈ Max rDS on = 11.4 mΩ at VGS = 10 V, ID = 11.5 A dual MLP package. The switch node has been internally


    Original     		PDF FDMS7606

    2ty transistor

    Abstract: 1202D 1204D 1206D 1208D 1210D J15A
    Text: DIOTEC ELECTRONICS CORP. Data Sheet No. BUDI-1200D-1A 18020 Hobart Blvd., Unit B Gardena, CA 90248 U.S.A Tel.: 310 767-1052 Fax: (310) 767-7958 MECHANICAL SPECIFICATION FEATURES R Die Size: 0.120" Round PROPRIETARY SOFT GLASS JUNCTION PASSIVATION FOR SUPERIOR RELIABILITY AND


    Original     		PDF BUDI-1200D-1A 12BAR 2ty transistor 1202D 1204D 1206D 1208D 1210D J15A

    Untitled

    Abstract: No abstract text available
    Text: PowerTrench Power Stage Asymmetric Dual N-Channel MOSFET Features General Description Q1: N-Channel This device includes two specialized N-Channel MOSFETs in a „ Max rDS on = 8 mΩ at VGS = 10 V, ID = 13 A dual PQFN package. The switch node has been internally


    Original     		PDF FDMS3664S FDMS3664S

    Untitled

    Abstract: No abstract text available
    Text: PowerTrench Power Stage Asymmetric Dual N-Channel MOSFET Features General Description Q1: N-Channel This device includes two specialized N-Channel MOSFETs in a „ Max rDS on = 5.6 mΩ at VGS = 10 V, ID = 15 A dual PQFN package. The switch node has been internally


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: FDMS3610S PowerTrench Power Stage 25V Asymmetric Dual N-Channel MOSFET General Description Features Q1: N-Channel This device includes two specialized N-Channel MOSFETs in a „ Max rDS on = 5.0 mΩ at VGS = 10 V, ID = 17.5 A dual PQFN package. The switch node has been internally


    Original     		PDF FDMS3610S

    1201D

    Abstract: No abstract text available
    Text: PowerTrench Power Stage Asymmetric Dual N-Channel MOSFET Features General Description Q1: N-Channel This device includes two specialized N-Channel MOSFETs in a „ Max rDS on = 8 mΩ at VGS = 10 V, ID = 13 A dual PQFN package. The switch node has been internally


    Original     		PDF FDMS3664S FDMS3664S 1201D

    AO-A15

    Abstract: 8l35 MCM72F6 MCM72F7
    Text: MOTOROLA SEMICONDUCTOR Order TECHNICAL DATA this document by MCM72F6/D — – Advance Information 512KB and 1MB Synchronous Fast Static RAM Module MCM72F6 MCM72F7 The MCM72F6 512KB is configured as 64K x 72 bits and the MCM72F7 (1 MB) is configured as 128K x 72 bits, Both are packaged in a 168 pin dual–in–line memory


    Original     		PDF MCM72F6/D 512KB MCM72F6 MCM72F7 512KB) Box5405, l-303-675-21400 rl-600-441-2447 AO-A15 8l35 MCM72F6 MCM72F7

    Untitled

    Abstract: No abstract text available
    Text: PowerTrench Power Stage Asymmetric Dual N-Channel MOSFET Features General Description Q1: N-Channel This device includes two specialized N-Channel MOSFETs in a ̈ Max rDS on = 8 mΩ at VGS = 10 V, ID = 13 A dual PQFN package. The switch node has been internally


    Original     		PDF

    FDMS3620S

    Abstract: No abstract text available
    Text: FDMS3620S PowerTrench PowerStage 25V Asymmetric Dual N-Channel MOSFET General Description Features Q1: N-Channel This device includes two specialized N-Channel MOSFETs in a ̈ Max rDS on = 4.7 mΩ at VGS = 10 V, ID = 17.5 A dual PQFN package. The switch node has been internally


    Original     		PDF FDMS3620S FDMS3620S

    fdms3600

    Abstract: FDMS3600S N9OC
    Text: PowerTrench Power Stage 25 V Asymmetric Dual N-Channel MOSFET Features General Description Q1: N-Channel This device includes two specialized N-Channel MOSFETs in a „ Max rDS on = 5.6 mΩ at VGS = 10 V, ID = 15 A dual PQFN package. The switch node has been internally


    Original     		PDF FDMS3600S FDMS3600S fdms3600 N9OC

    N9CC

    Abstract: FDMS3606AS 150 mh inductor
    Text: FDMS3606AS PowerTrench Power Stage 30 V Asymmetric Dual N-Channel MOSFET Features General Description Q1: N-Channel This device includes two specialized N-Channel MOSFETs in a „ Max rDS on = 8 mΩ at VGS = 10 V, ID = 13 A dual PQFN package. The switch node has been internally


    Original     		PDF FDMS3606AS FDMS3606AS N9CC 150 mh inductor

    11-CQ2

    Abstract: 22CF
    Text: PowerTrench Power Stage Asymmetric Dual N-Channel MOSFET Features General Description Q1: N-Channel This device includes two specialized N-Channel MOSFETs in a „ Max rDS on = 8 mΩ at VGS = 10 V, ID = 13 A dual PQFN package. The switch node has been internally


    Original     		PDF FDMS3668S FDMS3668S 11-CQ2 22CF

    2545 power n-channel mosfet

    Abstract: No abstract text available
    Text: FDMS3626S PowerTrench Power Stage 25V Asymmetric Dual N-Channel MOSFET Features General Description Q1: N-Channel This device includes two specialized N-Channel MOSFETs in a „ Max rDS on = 5.0 mΩ at VGS = 10 V, ID = 17.5 A dual PQFN package. The switch node has been internally


    Original     		PDF FDMS3626S FDMS3626S 2545 power n-channel mosfet

    FDMS7602S

    Abstract: 501B 8 P
    Text: FDMS7602S Dual N-Channel PowerTrench MOSFET Q1: 30 V, 30 A, 7.5 mΩ Q2: 30 V, 30 A, 5.0 mΩ Features General Description Q1: N-Channel This device includes two specialized N-Channel MOSFETs in a „ Max rDS on = 7.5 mΩ at VGS = 10 V, ID = 12 A dual MLP package.The switch node has been internally


    Original     		PDF FDMS7602S FDMS7602S 501B 8 P

    FDMS3606AS

    Abstract: No abstract text available
    Text: FDMS3606AS PowerTrench Power Stage Asymmetric Dual N-Channel MOSFET Features General Description Q1: N-Channel This device includes two specialized N-Channel MOSFETs in a „ Max rDS on = 8 mΩ at VGS = 10 V, ID = 13 A dual PQFN package. The switch node has been internally


    Original     		PDF FDMS3606AS FDMS3606AS

    1201-HA2

    Abstract: Allen-Bradley 1397 1321-3R80-B 1321-3R8-B 1321-3r25-b 1321-3R35-B 1201-HA1 1321-3R45-B 1321-3R8-c 1321-3R160-B
    Text: 1397 Digital DC Drive Available in either regenerative or non-regenerative configurations, the 1397 family of digital DC drives employs advanced microprocessor technology to help deliver performance, flexibility and communications options in a complete, economical drive package.


    Original     		PDF 1397-MB006 1397-MB010 1397-MB014 1397-MB018 1397-MB024 1397-MB031 1397-MB040 1397-MB050 1397-MB065 1397-MB085 1201-HA2 Allen-Bradley 1397 1321-3R80-B 1321-3R8-B 1321-3r25-b 1321-3R35-B 1201-HA1 1321-3R45-B 1321-3R8-c 1321-3R160-B

    fdms3660s

    Abstract: 501B 8 P
    Text: PowerTrench Power Stage Asymmetric Dual N-Channel MOSFET Features General Description Q1: N-Channel This device includes two specialized N-Channel MOSFETs in a „ Max rDS on = 8 mΩ at VGS = 10 V, ID = 13 A dual PQFN package. The switch node has been internally


    Original     		PDF FDMS3660S FDMS3660S 501B 8 P

    Untitled

    Abstract: No abstract text available
    Text: FDMS7606 Dual N-Channel PowerTrench MOSFET Q1: 30 V, 12 A, 11.4 mΩ Q2: 30 V, 22 A, 11.6 mΩ Features General Description Q1: N-Channel This device includes two specialized N-Channel MOSFETs in a „ Max rDS on = 11.4 mΩ at VGS = 10 V, ID = 11.5 A dual MLP package. The switch node has been internally


    Original     		PDF FDMS7606 FDMS7606

    Untitled

    Abstract: No abstract text available
    Text: FDMS3602AS PowerTrench Power Stage Asymmetric Dual N-Channel MOSFET Features General Description Q1: N-Channel This device includes two specialized N-Channel MOSFETs in a „ Max rDS on = 5.6 mΩ at VGS = 10 V, ID = 15 A dual PQFN package. The switch node has been internally


    Original     		PDF FDMS3602AS

    D325

    Abstract: No abstract text available
    Text: 8 Manufacturing date c o n s i s t i n g o f : 2 d i g i t s f o r the year Y Y , 2 d i g i t s old P/N Tyco (without the week ( WW) and 1 digit for the day -x-xxxxxxx-x V Code 0,6 P/N TYCO V Soldering/Wire-Wrap pins V42254-) 00 -0. 4 YYWWD +XXXX-+XXX


    OCR Scan     		PDF DIN41612 IEC603-2 V42254-) V42254- -D325 SR10-0177-03 SR10-0157-02 V42254-B1xxx-D325- D325

    IRFD1Z3 equivalent

    Abstract: 8N60 equivalent TP8N20 TP8N10 siemens semiconductor manual What is comparable with IRF 3205 2N6823 irf8408 MTM5N90 designers datasheet smps cook circuit
    Text: The information in this book has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. Motorola reserves the right to make changes with­ out further notice to any products herein to improve reliability, function or design. Motorola does not


    OCR Scan     		PDF VP1204N TP8P08 5001D VP1206N 1208N 5002D 1209N VP1209N IRFD1Z3 equivalent 8N60 equivalent TP8N20 TP8N10 siemens semiconductor manual What is comparable with IRF 3205 2N6823 irf8408 MTM5N90 designers datasheet smps cook circuit