1206 pads layout
Abstract: No abstract text available
Text: TECHNICAL INFORMATION SOLDER PAD GEOMETRY STUDIES FOR SURFACE MOUNT OF CHIP CAPACITORS* Kent Wicker & John Maxwell AVX Corporation Corporate Research Laboratory P.O. Box 867 Myrtle Beach, SC 29577 Abstract: Solder pad geometry for surface mounting chip capacitors were
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1206 pads layout
Abstract: 1812 pads layout IPC-SM-782
Text: TECHNICAL INFORMATION SOLDER PAD GEOMETRY STUDIES FOR SURFACE MOUNT OF CHIP CAPACITORS* Kent Wicker & John Maxwell AVX Corporation Corporate Research Laboratory P.O. Box 867 Myrtle Beach, SC 29577 Abstract: Solder pad geometry for surface mounting chip capacitors were
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S-PGSM00M301-R
1206 pads layout
1812 pads layout
IPC-SM-782
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walsin ceramic capacitor
Abstract: walsin 0603 capacitor ceramic capacitor footprint 0201 dimension ceramic capacitor footprint dimension WALSIN capacitor ac walsin capacitor walsin ceramic capacitor 1206 MLCC CRACK mlcc soldering footprint dimension of MLCC capacitor 1812
Text: MULTILAYER CERAMIC CAPACITORS MLCC Application guide MLCC APPLICATION GUIDE WALSIN TECHNOLOGY CORPORATION 566-1,Kao-Shi Road, 5 Lin, Yang-Mei, Tao-Yuan, Taiwan www.passivecomponent.com Mar. 09, 2010 1/10 MULTILAYER CERAMIC CAPACITORS MLCC Application guide
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RO3010
Abstract: j352 transistor j352 bc17a VJ2225Y
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF374A N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this
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MRF374A
RO3010
j352
transistor j352
bc17a
VJ2225Y
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MRF374A
Abstract: marking c14a l1a marking
Text: Freescale Semiconductor Technical Data Rev. 4, 12/2004 RF Power Field - Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF374A Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this
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marking c14a
l1a marking
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RO3010
Abstract: RF POWER VERTICAL MOSFET
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF374A N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this
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MRF374
MRF374A
RO3010
RF POWER VERTICAL MOSFET
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Kemet Flex Solutions
Abstract: f2105 IPC-782A 198D IPC-SM-782 EIA-198 method 103 F-2100E F211
Text: Surface Mount Mounting Pad Dimensions and Considerations Ceramic Capacitors including 0603, 0402, 0201 and ceramic arrays Tantalum Capacitors (including low profile and large case (X & E) sizes and R case sizes) Aluminum Capacitors (including D, V, & X case sizes)
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F-2100E
IPC-SM-782,
Kemet Flex Solutions
f2105
IPC-782A
198D
IPC-SM-782
EIA-198 method 103
F211
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thermistor r5t
Abstract: chip resistor 1206 c19a S1239 MOTOROLA P C3B Kemet bc17a GX-0300-55 R7B Connector RO3010
Text: MOTOROLA MRF373 MRF373S The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs 60 W, 470 – 860 MHz, 28 V LATERAL N–CHANNEL BROADBAND RF POWER MOSFETS Designed for broadband commercial and industrial applications at frequencies from 470 – 860 MHz. The high gain and broadband performance of this
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MRF373S
MRF373
31JUL04
31JAN05
thermistor r5t
chip resistor 1206
c19a
S1239
MOTOROLA P
C3B Kemet
bc17a
GX-0300-55
R7B Connector
RO3010
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J352
Abstract: No abstract text available
Text: MOTOROLA Order this document by MRF374A/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF374A N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this
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MRF374A
MRF374A/D
J352
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transistor L1A
Abstract: 1206 capacitor chip pads layout rogers capacitor bc17a 470 860 mhz PCB
Text: MOTOROLA Order this document by MRF374A/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF374A N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this
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MRF374A/D
MRF374A
MRF374A/D
transistor L1A
1206 capacitor chip pads layout
rogers capacitor
bc17a
470 860 mhz PCB
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transistor j352
Abstract: No abstract text available
Text: MOTOROLA Order this document by MRF374A/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF374A N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications at frequencies from 470 – 860 MHz. The high gain and broadband performance of this
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transistor j352
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RO3010
Abstract: motorola balun variable capacitor rogers capacitor 1606 mosfet C14A MRF374 MRF374A C12A C12B
Text: MOTOROLA Order this document by MRF374A/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF374A N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this
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MRF374A
RO3010
motorola balun
variable capacitor
rogers capacitor
1606 mosfet
C14A
MRF374
MRF374A
C12A
C12B
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balun 50 kW
Abstract: C14A C12A C12B C13B MRF374 MRF374A RO3010 Vishay Dale 800 ohm resistors
Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF374A/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF374A Freescale Semiconductor, Inc. N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this
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MRF374A
balun 50 kW
C14A
C12A
C12B
C13B
MRF374
MRF374A
RO3010
Vishay Dale 800 ohm resistors
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marking c14a
Abstract: ATC - Semiconductor Devices transistor j239 04 6274 045 000 800
Text: MRF374A Rev. 4, 12/2004 Freescale Semiconductor Technical Data RF Power Field - Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF374A Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this
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MRF374A
marking c14a
ATC - Semiconductor Devices
transistor j239
04 6274 045 000 800
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SMD Transistor z6
Abstract: SMD z6 1206 pads layout ADuM540x ceramic chip capacitor pads layout ADUM5401 transistor SMD Z2 terminal block connector
Text: Evaluation Board for the ADuM5401ADuM5404 Quad Isolators with isoPower EVAL-ADuM5401-ADuM5404 products and is a configurable board that can be adapted to many iCoupler products. FEATURES Convenient connections for power through screw terminal blocks Add-on BNC connector for 50 Ω signal sources
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EVAL-ADuM5401-ADuM5404
ADuM130x
ADuM131x
ADuM140x
ADuM141x
ADuM240x
ADuM330x
ADuM340x
ADuM540x
SMD Transistor z6
SMD z6
1206 pads layout
ceramic chip capacitor pads layout
ADUM5401
transistor SMD Z2
terminal block connector
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MRF373 PUSH PULL
Abstract: c19a chip resistor 1206 rogers C14A MRF373 MRF373 print circuit B07T MRF373S R7B Connector
Text: MOTOROLA Order this document by MRF373/D SEMICONDUCTOR TECHNICAL DATA Product Is Not Recommended for New Design. The next generation of higher performance products are in development. Visit our online Selector Guides http://mot–sps.com/rf/sg/sg.html for scheduled introduction dates.
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MRF373
MRF373S
MRF373
MRF373 PUSH PULL
c19a
chip resistor 1206
rogers
C14A
MRF373 print circuit
B07T
MRF373S
R7B Connector
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RO3010
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF372 N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this
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C3B Kemet
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Rev. 8, 12/2004 RF Power Field - Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF372 MRF372R5 Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this
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C3B Kemet
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transistor R1A 37
Abstract: 5233 mosfet J146 VJ1210y
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF372 N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this
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transistor R1A 37
5233 mosfet
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transmitter 446 mhz
Abstract: R5B transistor J960 470-860 mhz Power amplifier w
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF372 N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications at frequencies from 470 – 860 MHz. The high gain and broadband performance of this device
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transmitter 446 mhz
R5B transistor
J960
470-860 mhz Power amplifier w
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MRF373R1
Abstract: C19B C14A rf push pull mosfet power amplifier B07T MRF373SR1 chip resistor 1206 ATC 700 B 101 G P
Text: ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005 MOTOROLA Order this document by MRF373/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies from 470 – 860 MHz. The high gain and broadband performance of these
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MRF373R1
MRF373SR1
MRF373R1
C19B
C14A
rf push pull mosfet power amplifier
B07T
MRF373SR1
chip resistor 1206
ATC 700 B 101 G P
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c19a
Abstract: motorola rf power chip resistor 1206 BUY13 C14A LDMOS push pull MRF373 MRF373 PUSH PULL MRF373R1 MRF373SR1
Text: MOTOROLA RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies from 470 – 860 MHz. The high gain and broadband performance of these devices make them ideal for large–signal, common source amplifier applications in 28 volt transmitter equipment.
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MRF373SR1
MRF373R1
MRF373/D
c19a
motorola rf power
chip resistor 1206
BUY13
C14A
LDMOS push pull
MRF373
MRF373 PUSH PULL
MRF373SR1
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MRF373
Abstract: RO3010 A419 MRF373 PUSH PULL C14A MRF373 print circuit P1210 MRF373S atc 174 BUY13
Text: MOTOROLA The RF MOSFET Line MRF373 MRF373S RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs 470 – 860 MHz, 60 W, 28 V LATERAL N–CHANNEL BROADBAND RF POWER MOSFETS Designed for broadband commercial and industrial applications at frequencies from 470 – 860 MHz. The high gain and broadband performance of this
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MRF373
MRF373S
MRF373)
MRF373
DEVICEMRF373/D
RO3010
A419
MRF373 PUSH PULL
C14A
MRF373 print circuit
P1210
MRF373S
atc 174
BUY13
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KSS 1206
Abstract: chip resistor 1206 MRF373 MRF373 print circuit GPS 112 C14A GX-0300-55 MRF373S Thermistor application
Text: MOTOROLA O rder this docum ent by M RF373/D SEMICONDUCTOR TECHNICAL DATA Product Is Not Recomm ended for New Design. The next generation of higher performance products are in developm ent. Visit our online Selector Guides http://m ot-sps.com /rf/sg/sg.htm l for scheduled introduction dates.
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mrf373/d
KSS 1206
chip resistor 1206
MRF373
MRF373 print circuit
GPS 112
C14A
GX-0300-55
MRF373S
Thermistor application
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