GSP-1208STM

Contextual Info: GSP-1208STM AC/DC POWER SUPPLY PRELIMINARY DATA FEATURES • EUROPEAN INPUT VOLTAGE 230Vac ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ SINGLE OUTPUT MAX 10W EMC COMPLIANCE ACCORDING TO EU DIRECTIVES SAFETY APPROVAL ACCORDING TO EN60950 / EN60065 OUTPUT VOLTAGE PRECISION: ±5%

1208S

Contextual Info: SñE J> 7555015 RAPITRON C ORP MIRON 000023b I S l f l H R AM ' T 1208SFRAM Memory 4,096-Bit Nonvolatile Ferroelectric RAM Product Specification Features • 4,096 Bit Bytewide Nonvolatile Ferroelectric RAM Organized as 512 x 8 ■ CMOS Technology with Integrated Ferroelectric Storage Cells

GSP-1208STM

Contextual Info: GSP-1208STM AC/DC POWER SUPPLY PRELIMINARY DATA FEATURES • EUROPEAN INPUT VOLTAGE 230Vac ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ SINGLE OUTPUT MAX 10W EMC COMPLIANCE ACCORDING TO EU DIRECTIVES SAFETY APPROVAL ACCORDING TO EN60950 / EN60065 OUTPUT VOLTAGE PRECISION: ±5%

NX3008NBKMB

Abstract: IP4303CX4 PCMF2DFN1
Contextual Info: Safeguard sensitive ICs - Increase battery life - Save space With NXP key products as recommended in this brochure Interface / Function Description Product type Package NFC antenna protection 18 / 24 V Birectional low capacitance ESD protection diode PESD18VF1BL

FM1208S

Abstract: Ferroelectric RAM mtron "Ferroelectric RAM" ramtron FRAM
Contextual Info: F M 1 2 0 8 S F R A M M e m o ry r^ p M T R O 4,096-Bit Nonvolatile Ferroelectric RAM Product Specification N Features • 4,096 Bit Bytewide Nonvolatile Ferroelectric RAM Organized as 512 x 8 ■ CMOS Technology with Integrated Ferroelectric Storage Cells

Ferroelectric RAM

Abstract: 1208S FM1208S
Contextual Info: I 1208SFRAM Memory 4,096-Bit Nonvolatile Ferroelectric RAM Product Specification r^ p M T R O N Features • 4,096 Bit Bytewide Nonvolatile Ferroelectric RAM Organized as 512 x 8 ■ CMOS Technology with Integrated Ferroelectric Storage Cells ■ Fully Synchronous Operation

Ferroelectric RAM

Abstract: FM1208S
Contextual Info: 1208SFRAM Memory Î^ IM IR O N 4,096-Bit Nonvolatile Ferroelectric RAM Product Specification Features • 4,096 Bit Bytewide Nonvolatile Ferroelectric RAM Organized as 512 x 8 ■ CMOS Technology with Integrated Ferroelectric Storage Cells ■ Fully Synchronous Operation

Contextual Info: MITSUBISHI LSIs 1208SN-70L, -85L,-lOL, 12L,-15L/ 1208SN-70H,-85H,-10H,-12H,-15H 4 1 9 4 3 0 4 - BIT 5 2 4 2 8 8 - WORD B Y 8-BIT CM OS STATIC RAM MODULE DESCRIPTION The M H 5 1 2 0 8 S N is a 4 1 9 4 3 0 4 bits C M OS static R A M PIN CONFIGURATION (TOP VIEW)

Contextual Info: THIS DRAWING AND DESIGN HEREON CON­ STITUTES A PROPRIETARY DESIGN OF PACKARD ELECTRIC DIVISION AND IS NOT TO BE DUPLICATED OR REPRODUCED WITH­ OUT AUTHORITY OF PACKARD ELECTRIC DIVISION. DATE SYM REVISION RECORD RELEASED REVISED 23AU8Ì 28AUÌ0 DO NOT S C A L E

Contextual Info: THIS DRAWING AND DESIGN HEREON CON­ ST IT U T E S A PROPRIETARY DESIGN OF PACKARD E LE C T R IC DIVISION AND IS NOT TO BE D UPLICATED OR REPRODUCED WITH­ OUT AUTHORITY OF PACKARD E LE C T R IC DIVISION. DATE SYM 23AU8< DO NOT S C A L E INSULATION WINGS FOR

Contextual Info: THIS DRAWING AND DESIGN HEREON CON­ STITUTES A PROPRIETARY DESIGN OF PACKARD ELECTRIC DIVISION AND IS NOT TO BE DUPLICATED OR REPRODUCED WITH­ OUT AUTHORITY OF PACKARD ELECTRIC DIVISION. DATE SYM AUTHORITY DR REVISION RECORD CK Al REDRAWN! REVISED NOTES, NAME;

WPCE773LA0DG

Abstract: alc272x transistor r1009 TPS51125 9lprs9 100 N31 transistor SRN10KJ 9lprs929 ipad3 20D0
Contextual Info: 5 4 3 2 SYSTEM DC/DC Project code: 91.4BT01.001 PCB P/N : 48.4BT01.001 Revision : 08239-SA SM30 Block Diagram D 1 Mobile CPU Penryn 5V_S5 7A DCBATOUT PCB STACKUP SMSC 5V_AUX_S5 TOP SYSTEM DC/DC VCC HOST BUS INPUTS DDR3 LCD Cantiga 800/1033 12,13 MHz 1D05V_M(16A)

Contextual Info: THIS DRAWING AND DESIGN HEREON CON­ STITUTES A PROPRIETARY DESIGN OF PACKARD ELECTRIC DIVISION AND IS NOT TO BE DUPLICATED OR REPRODUCED WITH­ OUT AUTHORITY OF PACKARD ELECTRIC DIVISION. DATE SYM 15MYS0 12015795 - MAS SEPARATE 'C SIZEi ADDED NOTE *6 AND REVISED NOTE *1

diode e61

Abstract: bidirectional zener diode
Contextual Info: High voltage/high energy of surge protection elements EMD UM 2 D5 It protect from surge current at lower voltage and higher speed than protection inside the varistor. These are the key parts to high reliability set. clamping voltage Vz TYPE No. package surge

12020084

Abstract: Packard weather pack 12015024 packard electric 12015323 ck 17a
Contextual Info: THIS DRAWING AND DESIGN HEREON CON­ STITUTES A PROPRIETARY DESIGN OF PACKARD ELECTRIC DIVISION AND IS NOT TO BE DUPLICATED OR REPRODUCED WITH­ OUT AUTHORITY OF PACKARD ELECTRIC DIVISION. DATE F L E X AREA MAY E X H I B I T MATERIAL SEPARATION AFTER F I N A L ASSEMBLE

Ferroelectric RAM

Abstract: "Ferroelectric RAM" 755s015 TCA 356 1208S
Contextual Info: 1208SFRAM Memory r ^ p M 4,096-Bit Nonvolatile Ferroelectric RAM Product Specification T R O N Features • 4,096 Bit Bytewide Nonvolatile Ferroelectric RAM Organized as 512 x 8 ■ CMOS Technology with Integrated Ferroelectric Storage Cells ■ Fully Synchronous Operation

Ferroelectric RAM

Contextual Info: 1208S FRAM Memory r ^ M T R O N 4,096-Bit Nonvolatile Ferroelectric RAM Product Specification Features • 4,096 Bit Bytewide Nonvolatile Ferroelectric RAM Organized as 512 x 8 ■ CMOS Technology with Integrated Ferroelectric Storage Cells ■ Fully Synchronous Operation

C5125

Contextual Info: THIS DRAWING AND DESIGN HEREON CON­ S T IT U T E S A PROPRIETARY DESIGN OF PACKARD E LE C T R IC DIVISION AND IS NOT TO BE D UPLICATED OR REPRODUCED WITH­ OUT AUTHORITY OF PACKARD E LE C T R IC DIVISION. 8 6 7 5 4 2 3 PART NO. 1 ZONE DATE SYM REVISION RECORD

Contextual Info: THIS DRAWING AND DESIGN HEREON CON­ STITUTES A PROPRIETARY DESIGN OF PACKARD ELECTRIC DIVISION AND IS NOT TO BE DUPLICATED OR REPRODUCED WITH­ OUT AUTHORITY OF PACKARD ELECTRIC DIVISION. DATE AUTHORITY Al REDRAWN & REVISED WITH NO PHYSICAL CHANGE 10JLS1 A2 37.1 REF WAS 36.7 REF &

"Ferroelectric RAM"

Abstract: ferroelectric ram FM1208S RAM word-line driver 1994 ferroelectric
Contextual Info: 1208S FRAM Memory 4,096-Bit Nonvolatile Ferroelectric RAM Product Specification Features 4,096 Bit Bytewide Nonvolatile Ferroelectric RAM Organized as 512 x 8 • CMOS Technology with Integrated Ferroelectric Storage Cells ■ Fully Synchronous Operation

12015793

Abstract: 12010717 PA6 equivalent DELPHI E G S j1344 12015323 12m06
Contextual Info: REVISION HISTORY ' CLEARED REV COL & ALL PARTS - REVISED VIEW 226725 OGGOGG RC J — 2 . 0 R E F .-2 PLCS. n n n n >9Vd< IHd13Q □ "3 4> " 1. DIMENSIONS ARE TO FACE OF VIEW SHOWN,UNLESS OTHERWISE INDICATED. 2. CAVITIES ARE IDENTICAL. 3. CABLE SLOTS ARE IDENTICAL.

2s 8562

Contextual Info: 1208S FRAM Memory HAM ^ M T R O fM Features * I , ! ') ' l i i l liy t e w k lc \ o n v n l a l i l e 1 1 r r o e h v l n c li \ M I 10 \c a r l'a ia Rétention \\ith o u l Power I Single S \o li + 10% Suppk O r g a n i / « ! as S I 2 \ <S H C.VIOS T e c h n o lo g ) w it h I n t e g r a le d F e r r u c le c t r u