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    Shanghai ToFFuture Technology Co Ltd XT-M120MINI

    SENSOR OPTICAL USB, ETHERNET
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    DigiKey XT-M120MINI Bulk 1
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    Schneider Electric RTX-132 220/230 120MIN

    Timer; 10÷120min; DPDT; 230VAC/5A; Usup: 220÷230VAC; 220÷230VDC
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    TME RTX-132 220/230 120MIN 1
    • 1 $107.62
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    Schneider Electric RTX-133 220/230 120MIN

    Timer; 10÷120min; DPDT; 230VAC/5A; Usup: 220÷230VAC; 220÷230VDC
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TME RTX-133 220/230 120MIN 1
    • 1 $107.62
    • 10 $104.33
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    120MIN Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    2SC4467

    Abstract: transistor 2SC4467 2SA1694
    Text: 2SC4467 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SA1694 2SC4467 Unit ICBO VCB=160V 10max µA VCEO 120 V IEBO VEB=6V 10max µA VEBO 6 V V(BR)CEO IC 8 A hFE 120min IC=50mA V VCE=4V, IC=3A 50min∗ 19.9±0.3 Symbol A VCE(sat) IC=3A, IB=0.3A


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    2SC4467 2SA1694) MT-100 10max 50min 20typ 200typ 100ms 2SC4467 transistor 2SC4467 2SA1694 PDF

    2SC4467

    Abstract: 2SA1694 2sa1694 2sc4467 DSA0016509
    Text: 2SC4467 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SA1694 Ratings Unit ICBO VCB=160V 10max µA VCEO 120 V IEBO VEB=6V 10max µA VEBO 6 V V(BR)CEO IC 8 A hFE 120min IC=50mA V VCE=4V, IC=3A 50min∗ 19.9±0.3 Symbol A VCE(sat) IC=3A, IB=0.3A


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    2SC4467 2SA1694) MT-100 10max 50min 20typ 200typ 100ms 120min 2SC4467 2SA1694 2sa1694 2sc4467 DSA0016509 PDF

    2sd2083

    Abstract: transistor 2sd2083 2sb1383
    Text: 2SD2083 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SB1383 IEBO VEB=6V 10max mA 6 V V(BR)CEO 25(Pulse40) A hFE IC=25mA 120min VCE=4V, IC=12A 2000min V 2 A VCE(sat) IC=12A, IB=24mA 1.8max PC 120(Tc=25°C) W VBE(sat) IC=12A, IB=24mA 2.5max


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    2SD2083 2SB1383) 10max Pulse40) 120min 2000min 20typ 340typ 2sd2083 transistor 2sd2083 2sb1383 PDF

    2SC4153

    Abstract: 2SC4153 equivalent FM20 100X100X2
    Text: 2SC4153 Silicon NPN Triple Diffused Planar Transistor Switchihg Transistor µA 120min V hFE VCE=4V, IC=3A 70 to 220 IB 3 A VCE(sat) IC=3A, IB=0.3A 0.5max PC 30(Tc=25°C) W VBE(sat) IC=3A, IB=0.3A 1.2max V Tj 150 °C fT VCE=12V, IE=–0.5A 30typ MHz °C


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    2SC4153 120min 30typ 110typ ulse14) 100max O220F) 50x50x2 2SC4153 2SC4153 equivalent FM20 100X100X2 PDF

    2SC3835

    Abstract: DSA0016507
    Text: 2SC3835 Silicon NPN Triple Diffused Planar Transistor Switching Transistor µA V IEBO VEB=8V 100max µA 8 V V(BR)CEO IC=50mA 120min V 7(Pulse14) A hFE VCE=4V, IC=3A 70 to 220 3 A VCE(sat) IC=3A, IB=0.3A 0.5max PC 70(Tc=25°C) W VBE(sat) IC=3A, IB=0.3A 1.2max


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    2SC3835 100max 120min Pulse14) 30typ 110typ MT-100 2SC3835 DSA0016507 PDF

    2SC4153

    Abstract: FM20
    Text: 2SC4153 Silicon NPN Triple Diffused Planar Transistor Switchihg Transistor µA 120min V hFE VCE=4V, IC=3A 70 to 220 IB 3 A VCE(sat) IC=3A, IB=0.3A 0.5max PC 30(Tc=25°C) W VBE(sat) IC=3A, IB=0.3A 1.2max V Tj 150 °C fT VCE=12V, IE=–0.5A 30typ MHz °C


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    2SC4153 120min 30typ 110typ 100x100x2 150x150x2 50x50x2 2SC4153 FM20 PDF

    2SD2045

    Abstract: No abstract text available
    Text: 2SD2045 Silicon NPN Triple Diffused Planar Transistor VCB=120V 10max µA VCEO 120 V IEBO VEB=6V 10max mA 6 V V BR CEO IC=10mA 120min 6(Pulse10) A hFE VCE=2V, IC=3A 2000min V IB 1 A VCE(sat) IC=3A, IB=3mA 1.5max PC 50(Tc=25°C) W VBE(sat) IC=3A, IB=3mA 2.0max


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    2SD2045 10max 120min Pulse10) 2000min 50typ 70typ 2SD2045 PDF

    2SD2082

    Abstract: 2SB1382
    Text: 2SD2082 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SB1382 Application : Driver for Solenoid, Motor and General Purpose Conditions V ICBO VCB=120V 10max µA VCEO 120 V IEBO VEB=6V 10max mA 6 V V(BR)CEO 16(Pulse26) A hFE IC=10mA 120min


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    2SD2082 2SB1382) FM100 10max Pulse26) 120min 2000min 20typ 210typ 2SD2082 2SB1382 PDF

    2SD1769

    Abstract: No abstract text available
    Text: 2SD1769 Silicon NPN Triple Diffused Planar Transistor Unit Conditions 120 V ICBO VCB=120V 10max µA VCEO 120 V IEBO VEB=6V 20max mA 6 V V BR CEO 6(Pulse10) A hFE IC=10mA 120min VCE=2V, IC=3A 2000min 10.2±0.2 V IB 1 A VCE(sat) IC=3A, IB=3mA 1.5max PC 50(Tc=25°C)


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    2SD1769 MT-25 10max 20max Pulse10) 100typ 2SD1769 PDF

    2SD2015

    Abstract: FM20
    Text: 2SD2015 Silicon NPN Triple Diffused Planar Transistor IC 4 A 10max mA VEB=6V IC=10mA 120min hFE VCE=2V, IC=2A 2000min V IB 0.5 A VCE sat IC=2A, IB=2mA 1.5max PC 25(Tc=25°C) W VBE(sat) IC=2A, IB=2mA 2.0max V Tj 150 °C fT VCE=12V, IE=–0.1A 40typ MHz °C


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    2SD2015 120min 2000min 40typ 10max O220F) 2SD2015 FM20 PDF

    2SD2015

    Abstract: FM20 w605
    Text: 2SD2015 Silicon NPN Triple Diffused Planar Transistor V BR CEO IC 4 A 10max mA VEB=6V IC=10mA 120min hFE VCE=2V, IC=2A 2000min V IB 0.5 A VCE(sat) IC=2A, IB=2mA 1.5max PC 25(Tc=25°C) W VBE(sat) IC=2A, IB=2mA 2.0max V Tj 150 °C fT VCE=12V, IE=–0.1A 40typ


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    2SD2015 2000min 40typ 100ms 150x150x2 50x50x2 2SD2015 FM20 w605 PDF

    2SB1258

    Abstract: 2SD1785 FM20 IE1A
    Text: 2SD1785 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SB1258 VCEO 120 V IEBO VEBO 6 V V(BR)CEO 6(Pulse10) A hFE IC Symbol Conditions Unit VCB=120V 10max µA 10max mA VEB=6V IC=10mA 120min VCE=2V, IC=3A 2000min V 1 A VCE(sat) PC 30(Tc=25°C)


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    2SD1785 2SB1258) Pulse10) 10max 120min 2000min 100typ 70typ O220F) 2SB1258 2SD1785 FM20 IE1A PDF

    2SB1259

    Abstract: 2SD2081 FM20 12v dc to 6v dc
    Text: 2SD2081 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SB1259 ICBO VCEO 120 V IEBO VEBO 6 V V(BR)CEO 10(Pulse15) A IC VCB=120V 10max µA 10max mA VEB=6V IC=10mA 120min hFE VCE=4V, IC=5A 2000min V A VCE(sat) IC=5A, IB=5mA 1.5max 30(Tc=25°C)


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    2SD2081 2SB1259) 10max Pulse15) 120min 2000min 60typ 95typ 2SB1259 2SD2081 FM20 12v dc to 6v dc PDF

    2SD1785

    Abstract: 2SB1258 FM20
    Text: 2SD1785 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SB1258 VCEO 120 V IEBO VEBO 6 V V(BR)CEO 6(Pulse10) A hFE IC Symbol Conditions Unit VCB=120V 10max µA 10max mA VEB=6V IC=10mA 120min VCE=2V, IC=3A 2000min V 1 A VCE(sat) PC 30(Tc=25°C)


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    2SD1785 2SB1258) Pulse10) 10max 120min 2000min 100typ 70typ 2SD1785 2SB1258 FM20 PDF

    2sd2083

    Abstract: 2sb1383
    Text: 2SD2083 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SB1383 IEBO VEB=6V 10max mA 6 V V(BR)CEO 25(Pulse40) A hFE IC=25mA 120min VCE=4V, IC=12A 2000min V 2 A VCE(sat) IC=12A, IB=24mA 1.8max PC 120(Tc=25°C) W VBE(sat) IC=12A, IB=24mA 2.5max


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    2SD2083 2SB1383) 10max Pulse40) 120min 2000min 20typ 340typ MT-100 2sd2083 2sb1383 PDF

    25C1252

    Abstract: TE 8802
    Text: 2SC3834 Silicon NPN Triple Diffused Planar Transistor Switching Transistor Conditions Ratings Unit V ICBO VCB=200V 100max µA VCEO 120 V IEBO VEB=8V 100max µA 8 V V(BR)CEO IC=50mA 120min V 7(Pulse14) A hFE VCE=4V, IC=3A 70 to 220 IB 3 A VCE(sat) IC=3A, IB=0.3A


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    2SC3834 Pulse14) 100max 120min 30typ 110typ MT-25 25C1252 TE 8802 PDF

    2SD1769

    Abstract: No abstract text available
    Text: 2SD1769 Silicon NPN Triple Diffused Planar Transistor Unit Conditions 120 V ICBO VCB=120V 10max µA VCEO 120 V IEBO VEB=6V 20max mA 6 V V BR CEO 6(Pulse10) A hFE IC=10mA 120min VCE=2V, IC=3A 2000min 10.2±0.2 V IB 1 A VCE(sat) IC=3A, IB=3mA 1.5max PC 50(Tc=25°C)


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    2SD1769 MT-25 10max 20max Pulse10) 100typ 2SD1769 PDF

    2SC3834

    Abstract: transistor 1022
    Text: 2SC3834 Silicon NPN Triple Diffused Planar Transistor Switching Transistor 100max µA V IEBO VEB=8V 100max µA 8 V V(BR)CEO IC=50mA 120min V 7(Pulse14) A hFE VCE=4V, IC=3A 70 to 220 IB 3 A VCE(sat) IC=3A, IB=0.3A 0.5max PC 50(Tc=25°C) W VBE(sat) IC=3A, IB=0.3A


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    2SC3834 100max 120min Pulse14) 30typ 110typ MT-25 2SC3834 transistor 1022 PDF

    Untitled

    Abstract: No abstract text available
    Text: Power Transistor 2SC4153 ICBO IEBO V BR CEO hFE VCE (sat) VBE (sat) fT COB (Ta=25ºC) Unit µA µA V Ratings 100max 100max 120min 70 to 220 0.5max 1.2max 30typ 110typ External Dimensions FM20 (full-mold) 10.0 V V MHz pF a b RL (Ω) 16.7 IC (A) 3 VBB1 (V)


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    2SC4153 100max 120min 30typ 110typ PDF

    2SC5100

    Abstract: 2SA1908 DSA0016511
    Text: 2SC5100 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SA1908 hFE IB 3 A VCE(sat) PC 75(Tc=25°C) W fT 150 °C COB °C ∗hFE Rank Tj Tstg –55 to +150 V 120min IC=50mA VCE=4V, IC=3A 50min∗ IC=3A, IB=0.3A 0.5max V VCE=12V, IE=–0.5A


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    2SC5100 2SA1908) 50min 13typ 50typ 32typ 120min 10max FM100 2SC5100 2SA1908 DSA0016511 PDF

    2SD2045

    Abstract: No abstract text available
    Text: 2SD2045 Silicon NPN Triple Diffused Planar Transistor VCB=120V 10max µA VCEO 120 V IEBO VEB=6V 10max mA 6 V V BR CEO IC=10mA 120min 6(Pulse10) A hFE VCE=2V, IC=3A 2000min V IB 1 A VCE(sat) IC=3A, IB=3mA 1.5max PC 50(Tc=25°C) W VBE(sat) IC=3A, IB=3mA 2.0max


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    2SD2045 10max 120min Pulse10) 2000min 50typ 70typ 2SD2045 PDF

    2SA1908

    Abstract: 2SC5100
    Text: 2SC5100 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SA1908 hFE IB 3 A VCE(sat) PC 75(Tc=25°C) W fT 150 °C COB °C ∗hFE Rank Tj Tstg –55 to +150 V 120min IC=50mA VCE=4V, IC=3A 50min∗ IC=3A, IB=0.3A 0.5max V VCE=12V, IE=–0.5A


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    2SC5100 2SA1908) 50min 13typ 50typ 32typ 120min 10max 2SA1908 2SC5100 PDF

    2sc3835

    Abstract: No abstract text available
    Text: 2SC3835 Silicon NPN Triple Diffused Planar Transistor Switching Transistor 100max µA V IEBO VEB=8V 100max µA V V V(BR)CEO IC=50mA 120min 7(Pulse14) A hFE VCE=4V, IC=3A 70 to 220 IB 3 A VCE(sat) IC=3A, IB=0.3A 0.5max PC 70(Tc=25°C) W VBE(sat) IC=3A, IB=0.3A


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    2SC3835 100max 120min Pulse14) 30typ 110typ MT-100 2sc3835 PDF

    2SD2082

    Abstract: 2SB1382
    Text: 2SD2082 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SB1382 Application : Driver for Solenoid, Motor and General Purpose Conditions V ICBO VCB=120V 10max µA VCEO 120 V IEBO VEB=6V 10max mA 6 V V(BR)CEO 16(Pulse26) A hFE IC=10mA 120min


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    2SD2082 2SB1382) FM100 10max Pulse26) 120min 2000min 2SD2082 2SB1382 PDF