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    Tripp Lite P142-000-MINI

    ADAPTER HDMI RCPT TO HDMI PLUG
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    DigiKey P142-000-MINI Bulk 12 1
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    Mouser Electronics P142-000-MINI
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    Newark P142-000-MINI Bulk 10
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    NAC P142-000-MINI 8 1
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    Master Electronics P142-000-MINI
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    2000MIN Datasheets Context Search

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    equivalent 2sb1383

    Abstract: 2sb1383 equivalent 2sb1383 2sd2083
    Text: 2 k Ω (80Ω) E 2SB1383 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2083) –10max µA V IEBO VEB=–6V –10max mA –120min 2000min VCE(sat) IC=–12A, IB=–24mA –1.8max VBE(sat) IC=–12A, IB=–24mA –2.5max V VCE=–12V, IE=1A


    Original     		PDF 2SB1383 2SD2083) 10max 2000min 50typ 230typ 120min equivalent 2sb1383 2sb1383 equivalent 2sb1383 2sd2083

    2SD2014

    Abstract: 2SB1257 FM20
    Text: 2SD2014 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SB1257 ICBO VCEO 80 V IEBO VEBO 6 V V(BR)CEO IC 4 A hFE VCE=2V, IC=3A 2000min Conditions Unit VCB=120V 10max µA VEB=6V 10max mA IC=10mA 80min V 10.1±0.2 IB 0.5 A VCE(sat) IC=3A, IB=3mA


    Original     		PDF 2SD2014 2SB1257) O220F) 2000min 10max 80min 75typ 45typ 2SD2014 2SB1257 FM20

    2sd2083

    Abstract: transistor 2sd2083 2sb1383
    Text: 2SD2083 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SB1383 IEBO VEB=6V 10max mA 6 V V(BR)CEO 25(Pulse40) A hFE IC=25mA 120min VCE=4V, IC=12A 2000min V 2 A VCE(sat) IC=12A, IB=24mA 1.8max PC 120(Tc=25°C) W VBE(sat) IC=12A, IB=24mA 2.5max


    Original     		PDF 2SD2083 2SB1383) 10max Pulse40) 120min 2000min 20typ 340typ 2sd2083 transistor 2sd2083 2sb1383

    2SB1420

    Abstract: SDC40
    Text: 2 k Ω (80Ω) E 2SB1420 Silicon PNP Epitaxial Planar Transistor VCBO –120 V ICBO VCB=–120V –10max µA VCEO –120 V IEBO VEB=–6V –10max mA –6 V V(BR)CEO –16(Pulse–26) A hFE IC=–10mA –120min VCE=–4V, IC=–8A 2000min Unit V IB –1


    Original     		PDF 2SB1420 MT-100 10max 120min 50typ 2000min 2SB1420 SDC40

    2SB1257

    Abstract: 2SD2014 FM20 nk co DSA0016505
    Text: 2 k Ω (6 5 0Ω) E 2SB1257 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2014) A –10max µA –60min V hFE VCE=–4V, IC=–3A 2000min IB –1 A VCE(sat) IC=–3A, IB=–6mA –1.5max PC 25(Tc=25°C) W VBE(sat) IC=–3A, IB=–6mA –2max


    Original     		PDF 2SB1257 2SD2014) 10max 60min 2000min 150typ 75typ O220F) 50x50x2 2SB1257 2SD2014 FM20 nk co DSA0016505

    2SD2045

    Abstract: No abstract text available
    Text: 2SD2045 Silicon NPN Triple Diffused Planar Transistor VCB=120V 10max µA VCEO 120 V IEBO VEB=6V 10max mA 6 V V BR CEO IC=10mA 120min 6(Pulse10) A hFE VCE=2V, IC=3A 2000min V IB 1 A VCE(sat) IC=3A, IB=3mA 1.5max PC 50(Tc=25°C) W VBE(sat) IC=3A, IB=3mA 2.0max


    Original     		PDF 2SD2045 10max 120min Pulse10) 2000min 50typ 70typ 2SD2045

    2SD1769

    Abstract: No abstract text available
    Text: 2SD1769 Silicon NPN Triple Diffused Planar Transistor Unit Conditions 120 V ICBO VCB=120V 10max µA VCEO 120 V IEBO VEB=6V 20max mA 6 V V BR CEO 6(Pulse10) A hFE IC=10mA 120min VCE=2V, IC=3A 2000min 10.2±0.2 V IB 1 A VCE(sat) IC=3A, IB=3mA 1.5max PC 50(Tc=25°C)


    Original     		PDF 2SD1769 MT-25 10max 20max Pulse10) 100typ 2SD1769

    2SD2014

    Abstract: 2SB1257 FM20 S8010
    Text: 2SD2014 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SB1257 ICBO VCEO 80 V IEBO VEBO 6 V V(BR)CEO IC 4 A hFE VCE=2V, IC=3A 2000min Conditions Unit VCB=120V 10max µA VEB=6V 10max mA IC=10mA 80min V 10.1±0.2 IB 0.5 A VCE(sat) IC=3A, IB=3mA


    Original     		PDF 2SD2014 2SB1257) O220F) 2000min 10max 80min 75typ 45typ 150x150x2 2SD2014 2SB1257 FM20 S8010

    2SD2015

    Abstract: FM20
    Text: 2SD2015 Silicon NPN Triple Diffused Planar Transistor IC 4 A 10max mA VEB=6V IC=10mA 120min hFE VCE=2V, IC=2A 2000min V IB 0.5 A VCE sat IC=2A, IB=2mA 1.5max PC 25(Tc=25°C) W VBE(sat) IC=2A, IB=2mA 2.0max V Tj 150 °C fT VCE=12V, IE=–0.1A 40typ MHz °C


    Original     		PDF 2SD2015 120min 2000min 40typ 10max O220F) 2SD2015 FM20

    2SD1796

    Abstract: FM20
    Text: 2SD1796 Built-in Avalanche Diode for Surge Absorbing Darlington Silicon NPN Triple Diffused Planar Transistor 4 A hFE mA 60±10 VCE=4V, IC=3A 2000min V 0.5 A VCE sat IC=3A, IB=10mA 1.5max V PC 25(Tc=25°C) W fT VCE=12V, IE=–0.2A 60typ MHz Tj 150 °C COB


    Original     		PDF 2SD1796 2000min 60typ 150x150x2 50x50x2 2SD1796 FM20

    2SD2017

    Abstract: FM20
    Text: 2SD2017 Silicon NPN Triple Diffused Planar Transistor VCEO 250 V IEBO VEBO 20 V V BR CEO IC 6 A hFE VCE=2V, IC=2A 2000min Conditions Unit VCB=300V 100max µA VEB=20V 10max mA IC=25mA 250min 10.1±0.2 V IB 1 A VCE(sat) IC=2A, IB=2mA 1.5max PC 35(Tc=25°C) W


    Original     		PDF 2SD2017 O220F) 2000min 100max 10max 250min 20typ 65typ 150x150x2 100x100x2 2SD2017 FM20

    2SD2015

    Abstract: FM20 w605
    Text: 2SD2015 Silicon NPN Triple Diffused Planar Transistor V BR CEO IC 4 A 10max mA VEB=6V IC=10mA 120min hFE VCE=2V, IC=2A 2000min V IB 0.5 A VCE(sat) IC=2A, IB=2mA 1.5max PC 25(Tc=25°C) W VBE(sat) IC=2A, IB=2mA 2.0max V Tj 150 °C fT VCE=12V, IE=–0.1A 40typ


    Original     		PDF 2SD2015 2000min 40typ 100ms 150x150x2 50x50x2 2SD2015 FM20 w605

    2SB1258

    Abstract: 2SD1785 FM20 IE1A
    Text: 2SD1785 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SB1258 VCEO 120 V IEBO VEBO 6 V V(BR)CEO 6(Pulse10) A hFE IC Symbol Conditions Unit VCB=120V 10max µA 10max mA VEB=6V IC=10mA 120min VCE=2V, IC=3A 2000min V 1 A VCE(sat) PC 30(Tc=25°C)


    Original     		PDF 2SD1785 2SB1258) Pulse10) 10max 120min 2000min 100typ 70typ O220F) 2SB1258 2SD1785 FM20 IE1A

    2SB1259

    Abstract: 2SD2081 FM20 12v dc to 6v dc
    Text: 2SD2081 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SB1259 ICBO VCEO 120 V IEBO VEBO 6 V V(BR)CEO 10(Pulse15) A IC VCB=120V 10max µA 10max mA VEB=6V IC=10mA 120min hFE VCE=4V, IC=5A 2000min V A VCE(sat) IC=5A, IB=5mA 1.5max 30(Tc=25°C)


    Original     		PDF 2SD2081 2SB1259) 10max Pulse15) 120min 2000min 60typ 95typ 2SB1259 2SD2081 FM20 12v dc to 6v dc

    2SD1796

    Abstract: relay 12v 3a datasheet FM20
    Text: 2SD1796 Built-in Avalanche Diode for Surge Absorbing Darlington Silicon NPN Triple Diffused Planar Transistor IC 4 A hFE 10max mA VEB=6V IC=10mA 60±10 VCE=4V, IC=3A 2000min V 0.5 A VCE sat IC=3A, IB=10mA 1.5max V PC 25(Tc=25°C) W fT VCE=12V, IE=–0.2A


    Original     		PDF 2SD1796 2000min 60typ 150x150x2 50x50x2 2SD1796 relay 12v 3a datasheet FM20

    2SD1785

    Abstract: 2SB1258 FM20
    Text: 2SD1785 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SB1258 VCEO 120 V IEBO VEBO 6 V V(BR)CEO 6(Pulse10) A hFE IC Symbol Conditions Unit VCB=120V 10max µA 10max mA VEB=6V IC=10mA 120min VCE=2V, IC=3A 2000min V 1 A VCE(sat) PC 30(Tc=25°C)


    Original     		PDF 2SD1785 2SB1258) Pulse10) 10max 120min 2000min 100typ 70typ 2SD1785 2SB1258 FM20

    2SD2081

    Abstract: 2SB1259 FM20 451a
    Text: 2SD2081 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SB1259 ICBO VCEO 120 V IEBO VEBO 6 V V(BR)CEO 10(Pulse15) A IC VCB=120V 10max µA 10max mA VEB=6V IC=10mA 120min hFE VCE=4V, IC=5A 2000min V A VCE(sat) IC=5A, IB=5mA 1.5max 30(Tc=25°C)


    Original     		PDF 2SD2081 2SB1259) 10max Pulse15) 120min 2000min 60typ 95typ O220F) 2SD2081 2SB1259 FM20 451a

    2sd2083

    Abstract: 2sb1383
    Text: 2SD2083 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SB1383 IEBO VEB=6V 10max mA 6 V V(BR)CEO 25(Pulse40) A hFE IC=25mA 120min VCE=4V, IC=12A 2000min V 2 A VCE(sat) IC=12A, IB=24mA 1.8max PC 120(Tc=25°C) W VBE(sat) IC=12A, IB=24mA 2.5max


    Original     		PDF 2SD2083 2SB1383) 10max Pulse40) 120min 2000min 20typ 340typ MT-100 2sd2083 2sb1383

    2SB1420

    Abstract: DSA0016506
    Text: 2 k Ω (80Ω) E 2SB1420 Silicon PNP Epitaxial Planar Transistor VCBO –120 V ICBO VCB=–120V –10max µA VCEO –120 V IEBO VEB=–6V –10max mA –6 V V(BR)CEO –16(Pulse–26) A hFE Unit IC=–10mA –120min VCE=–4V, IC=–8A 2000min V IB –1


    Original     		PDF 2SB1420 MT-100 10max 120min 50typ 2000min 2SB1420 DSA0016506

    2sb1383

    Abstract: 2sd2083 DSA0016505
    Text: 2 k Ω (80Ω) E 2SB1383 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2083) –10max µA V IEBO VEB=–6V –10max mA –120min 2000min VCE(sat) IC=–12A, IB=–24mA –1.8max VBE(sat) IC=–12A, IB=–24mA –2.5max V VCE=–12V, IE=1A


    Original     		PDF 2SB1383 2SD2083) 10max 2000min 50typ 230typ 120min MT-100 2sb1383 2sd2083 DSA0016505

    2SB1351

    Abstract: FM20 2SB135
    Text: 2 k Ω (1 0 0Ω) E 2SB1351 Silicon PNP Epitaxial Planar Transistor hFE mA –60min V VCE=–4V, IC=–10A 2000min IB –1 A VCE(sat) IC=–10A, IB=–20mA –1.5max PC 30(Tc=25°C) W VBE(sat) IC=–10A, IB=–20mA –2.0max V Tj 150 °C fT VCE=–12V, IE=1A


    Original     		PDF 2SB1351 60min 2000min 130typ 170typ 10max O220F) 50x50x2 2SB1351 FM20 2SB135

    2SD2014

    Abstract: 2SB1257 FM20
    Text: 2 k Ω (6 5 0Ω) E 2SB1257 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2014) A –10max µA –60min V hFE VCE=–4V, IC=–3A 2000min IB –1 A VCE(sat) IC=–3A, IB=–6mA –1.5max PC 25(Tc=25°C) W VBE(sat) IC=–3A, IB=–6mA –2max


    Original     		PDF 2SB1257 2SD2014) 10max 60min 2000min 150typ 75typ O220F) 2SD2014 2SB1257 FM20

    Untitled

    Abstract: No abstract text available
    Text: 2 k Ω (1 0 0Ω) E 2SB1352 Silicon PNP Epitaxial Planar Transistor hFE mA –60min V VCE=–4V, IC=–10A 2000min IB –1 A VCE(sat) IC=–10A, IB=–20mA –1.5max PC 60(Tc=25°C) W VBE(sat) IC=–10A, IB=–20mA –2.0max V Tj 150 °C fT VCE=–12V, IE=1A


    Original     		PDF 2SB1352 10max 60min 2000min 130typ 170typ FM100

    2SD2633

    Abstract: 84AB 2sd26
    Text: Power Transistor 2SD2633 Tj Tstg W ICBO IEBO VCEO hFE VCE sat VBE (sat) Test Conditions VCB=200V VEB=6V IC=50mA VCE=2V, IC=6A IC=6A, IB=6mA IC=6A, IB=6mA Ratings 100max 10max 150min 2000min 1.5max 2.0max (Ta=25ºC) Unit µA mA V External Dimensions TO220F (full-mold)


    Original     		PDF 2SD2633 100max 10max 150min 2000min O220F 2SD2633 84AB 2sd26