Contextual Info: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MS2267 RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS Features • • • • • • • 960 – 1215MHz 50 VOLTS 5:1 VSWR CAPABILITY @ RATED CONDITIONS INPUT/OUTPUT MATCHING

MS2267

Abstract: 50V 1215MHZ
Contextual Info: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MS2267 RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS Features • • • • • • • 960 – 1215MHz 50 VOLTS 5:1 VSWR CAPABILITY @ RATED CONDITIONS INPUT/OUTPUT MATCHING

7121

Abstract: MS2267 50V 1215MHZ
Contextual Info: MS2267 RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS Features • • • • • • • 960 – 1215MHz 50 VOLTS 5:1 VSWR CAPABILITY @ RATED CONDITIONS INPUT/OUTPUT MATCHING POUT = 250 WATTS GP = 8.0 dB MINIMUM COMMON BASE CONFIGURATION DESCRIPTION: The MS2267 is a high power Class C NPN transistor

MRF10031

Contextual Info: MRF10031 Microwave Power Silicon NPN Transistor 30W peak , 960–1215MHz, 36V M/A-COM Products Released - Rev. 05.30.07 Features • • • • • • • • Guaranteed performance @ 960-1215MHz, 36Vdc Output power: 30W peak Minimum gain: 9.0dB min., 9.5dB typ.

RFHA1006

Abstract: 0906-4K LQG11A47NJ00
Contextual Info: RFHA1006 RFHA1006 225MHz to 1215MHz, 9W GaN Wideband Power Amplifier 225MHz TO 1215MHz, 9W GaN WIDEBAND POWER AMPLIFIER Package: AlN Leadless Chip Carrier / SO8 VGS Pin 1 Features  Advanced GaN HEMT Technology  Output Power of 9W  Advanced Heat-Sink Technology

Contextual Info: Part Number: Integra ILD0912M400HV TECHNOLOGIES, INC. Avionics TACAN RF Power LDMOS FET Silicon LDMOS FET  High Power Gain  Superior thermal stability The high power transistor part number ILD0912M400HV is designed for Avionics TACAN systems operating at 960-1215MHz.

Contextual Info: 800 Watts, 50V, 960-1215MHz DESCRIPTION PACKAGE The high power HVV0912-800 device is a high voltage silicon enhancement mode RF transistor designed for L-band pulsed avionics applications operating over the frequency range of 960 MHz and 1215 MHz. FEATURES

Contextual Info: RFHA1006 RFHA1006 9W GaN Wide-Band Power Amplifier 225MHz to 1215MHz The RFHA1006 is a wideband Power Amplifier designed for CW and pulsed applications such as wireless infrastructure, RADAR, two way radios and general purpose amplification. Using an advanced high power density

Contextual Info: Specification for an Highpass LC Filter MtronPTI P/N: LF9412 I. General & Electrical Requirements 1. Corner Frequency FON : 1215MHz 2. Passband: 1215MHz to 1400MHz 3. Passband Insertion Loss: ≤ 0.7dB 4. Passband VSWR: ≤ 1.4:1 5. Passband Phase Linearity: ≤ 9

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FWbb[j PALLET FORM FACTOR FEATURES 1 kWatt RF Pout (32 Watts Input Power) 48V operation VIMOSTM Technology High Gain, 15dB at 1 kWatt 1215MHz Compact design 2.6 x 4.6 Inches (64 x 117mm)

MS2267

Abstract: TACAN
Contextual Info: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MS2267 RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS Features • • • • • • • 960 – 1215MHz 50 VOLTS 5:1 VSWR CAPABILITY @ RATED CONDITIONS INPUT/OUTPUT MATCHING

Contextual Info: RFHA1006 RFHA1006 225MHz to 1215MHz, 9W GaN Wideband Power Amplifier 225MHz TO 1215MHz, 9W GaN WIDEBAND POWER AMPLIFIER Package: AlN Leadless Chip Carrier / SO8 VGS Pin 1 Features  Advanced GaN HEMT Technology  Output Power of 9W  Advanced Heat-Sink Technology

RFHA

Abstract: LQG11A47NJ00
Contextual Info: RFHA1006 RFHA1006 225MHz to 1215MHz, 9W GaN Wideband Power Amplifier 225MHz TO 1215MHz, 9W GaN WIDEBAND POWER AMPLIFIER Package: AlN Leadless Chip Carrier / SO8 VGS Pin 1 Features  Advanced GaN HEMT Technology  Output Power of 9W  Advanced Heat-Sink Technology

Contextual Info: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MS2267 RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS Features • • • • • • • 960 – 1215MHz 50 VOLTS 5:1 VSWR CAPABILITY @ RATED CONDITIONS INPUT/OUTPUT MATCHING

AM80912-005

Abstract: capacitor feed-through SGS-THOMSON RF POWER
Contextual Info: AM80912-005 RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS . . . . REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED 5:1 VSWR CAPABILITY LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE POUT = 6.0 W MIN. WITH 9.3 dB GAIN

Contextual Info: [ Z J SGS-THOMSON * 7 w. RiflD g[S |[Li TIS©liaB(gi A M 8 0 9 1 2 -0 1 5 RF & MICROWAVE TRANSISTORS _ AVIONICS APPLICATIONS . REFRACTORY/GOLD METALLIZATION • EM ITTER SITE BALLASTED . 0 0 :1 VSWR CAPABILITY ■ LOW THERMAL RESISTANCE

Contextual Info: 5 7 . SGS-THOMSON AM80912-030 m RF & MICROWAVE TRANSISTORS SPECIALITY AVIONICS/JTIDS APPLICATIONS REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED 15:1 VSWR CAPABILITY LOW RF THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE

Contextual Info: RFHA1025 RFHA1025 280W GaN Wideband Pulsed Power Amplifier 280W GaN WIDEBAND PULSED POWER AMPLIFIER Package: Flanged Ceramic, 2-Pin Features  Wideband Operation: 0.96GHz to 1.215GHz  Advanced GaN HEMT Technology  Advanced Heat-Sink Technology 

Contextual Info: Part Number: Integra IB0912M600 TECHNOLOGIES, INC. L-Band TACAN Transistor Silicon Bipolar − Ultra-high fT The high power pulsed transistor device part number IB0912M600 is designed for systems operating over the instantaneous bandwidth of 960-1215 MHz. While operating in class C mode under TACAN pulsing

AM0912-300

Abstract: 0912-300 so 960
Contextual Info: AM0912-300 RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS . . . . . REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED 15:1 VSWR CAPABILITY LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE POUT = 300 W MIN. WITH 7.0 dB GAIN

Contextual Info: Part Number: Integra ILD0912M150HV TECHNOLOGIES, INC. Avionics Band RF Power LDMOS FET Silicon LDMOS FET  High Power Gain  Superior thermal stability The high power transistor part number ILD0912M150HV is designed for Avionics systems operating at 960-1215 MHz. Operating at 10µs,

1090mhz

Abstract: JESD22-A114 PRA1000
Contextual Info: PRELIMINARY Long & Short Pulse 960-1215Mz 1025-1150MHz 1030-1090MHz PRA1000 300 Watt, 36V, Pulsed LDMOS RF Power Transistor DME, TACAN, TCAS, MODE S, Introduction Table 1. Thermal Characteristics Parameter Thermal Resistance, Junction to Case: Sym Value Unit

MAX1784

Abstract: PDL400 MAX4726 JESD22-C101A
Contextual Info: PDL400U/F PRELIMINARY DATASHEET 45 W, 960-1215 MHz, N-Channel E-M ode, Lateral MOSFET Introduction Table 1. Thermal Ch aracteris tic s The PDL400 is a high-voltage, gold metalized laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for applications

AM80912-030

Contextual Info: AM80912-030 RF & MICROWAVE TRANSISTORS SPECIALITY AVIONICS/JTIDS APPLICATIONS . . . . REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED 15:1 VSWR CAPABILITY LOW RF THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE