EVW020A0S6R041Z
Abstract: EVW020A0S6 ipc-9592 IEC60950-1 SR-332 VDE0805-1 EVW020A0S6R041-HZ 124oC EVW020A0S6R0
Text: Data Sheet February 11, 2010 EVW020A0S6R0 Series Eighth-Brick DC-DC Converter Power Modules 36–75Vdc Input; 6.0Vdc Output; 20A Output Current Features Compliant to RoHS EU Directive 2002/95/EC (-Z versions) Compliant to ROHS EU Directive 2002/95/EC with
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EVW020A0S6R0
75Vdc
2002/95/EC
2002/95/EC
IPC-9592,
48Vdc)
Inp2-244-9428)
DS09-010
evw020s6r0
EVW020A0S6R041Z
EVW020A0S6
ipc-9592
IEC60950-1
SR-332
VDE0805-1
EVW020A0S6R041-HZ
124oC
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HX8340B
Abstract: HX8340-B mx 362-0
Text: DATA SHEET DOC No. HX8340-B(N -DS ) HX8340-B(N) 176RGB x 220 dot, 262k color, with internal GRAM, TFT Mobile Single Chip Driver Preliminary version 01 October, 2007 HX8340-B(N) 176RGB x 220 dot, 262K color, with internal GRAM, TFT Mobile Single Chip Driver
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HX8340-B
176RGB
224October,
225October,
HX8340B
mx 362-0
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CY8C41123
Abstract: CY8C41223
Text: CY8C41123 and CY8C41223 PRELIMINARY Linear Power PSoC Devices 1.0 Features 1.1 • • • • Key Features • Extended Operating Voltage of 2.5V to 36V • 2 HV Linear Opamp Control Loops for Driving Power PFETs • 2 HV Analog Sense Inputs • 4KB of Flash
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CY8C41123
CY8C41223
12-Bit
16-Bit
CY8C41223
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heat resistor
Abstract: No abstract text available
Text: Data Sheet March 3, 2011 EVW020A0S6R0 Series Eighth-Brick DC-DC Converter Power Modules 36–75Vdc Input; 6.0Vdc Output; 20A Output Current Features • Compliant to RoHS EU Directive 2002/95/EC (-Z versions) • Compliant to ROHS EU Directive 2002/95/EC with
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EVW020A0S6R0
75Vdc
2002/95/EC
2002/95/EC
IPC-9592,
48Vdc)
72-244-WATT
DS09-010
evw020s6r0
heat resistor
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Untitled
Abstract: No abstract text available
Text: FDD1600N10ALZD BoostPak N-Channel PowerTrench MOSFET + Diode 100 V, 6.8 A, 160 mΩ Features Description • RDS(on) = 124 mΩ ( Typ.)@ VGS = 10 V, ID = 3.4 A This N-Channel MOSFET is produced using Fairchild Semiconductor®’s PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching
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FDD1600N10ALZD
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HX8369
Abstract: S1129 Himax 23 PIN TFT MOBILE DISPLAY HX5186-A
Text: DOC No. HX8369-A00-DS HX8369-A00 480RGB x 864 dot, 16.7M color, with internal GRAM, TFT Mobile Single Chip Driver Version 02 October, 2010 HX8369-A00 480RGB x 864 dot, 16.7M color, with internal GRAM, TFT Mobile Single Chip Driver List of Contents October, 2010
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HX8369-A00-DS
HX8369-A00
480RGB
285October,
HX8369
S1129
Himax
23 PIN TFT MOBILE DISPLAY
HX5186-A
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Untitled
Abstract: No abstract text available
Text: Data Sheet March 3, 2011 EVW020A0S6R0 Series Eighth-Brick DC-DC Converter Power Modules 36–75Vdc Input; 6.0Vdc Output; 20A Output Current Features • Compliant to RoHS EU Directive 2002/95/EC (-Z versions) • Compliant to ROHS EU Directive 2002/95/EC with
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EVW020A0S6R0
75Vdc
2002/95/EC
2002/95/EC
IPC-9592,
48Vdc)
DS09-010
evw020s6r0
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Untitled
Abstract: No abstract text available
Text: FDD1600N10ALZD BoostPak N-Channel PowerTrench MOSFET + Diode 100 V, 6.8 A, 160 m Features Description • RDS(on) = 124 m ( Typ.)@ VGS = 10 V, ID = 3.4 A This N-Channel MOSFET is produced using Fairchild Semiconductor®’s PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching
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FDD1600N10ALZD
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jedec MO229
Abstract: BUT14
Text: Preliminary Technical Data ±2°C Accurate, 12-Bit Digital Temperature Sensor ADT7408 FUNCTIONAL BLOCK DIAGRAM FEATURES 12-bit temperature-to-digital converter ±2oC accuracy typ Operation from −20°C to +125°C Operation from 3 V to 3.6 V Average supply current 500µA max
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12-bit
MO-229
JC-42
ADT7408
ADT7408CCPZ2-reel7
PR05716-0-8/05
jedec MO229
BUT14
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Untitled
Abstract: No abstract text available
Text: LPRF Board API Reference Manual JN-RM-2003 Revision 2.2 17 December 2012 LPRF Board API Reference Manual 2 NXP Laboratories UK 2012 JN-RM-2003 v2.2 LPRF Board API Reference Manual Contents About this Manual 7 Organisation Conventions Acronyms and Abbreviations
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JN-RM-2003
JN-RM-2003
u16ALSreadChannelResult
u16HTSreadTempResult
u16HTSreadHumidityResult
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TRAM
Abstract: No abstract text available
Text: CY8C41123 and CY8C41223 PRELIMINARY Linear Power PSoC Devices 1.0 Features 1.1 • • • • Key Features • Extended Operating Voltage of 2.5V to 36V • 2 HV Linear Opamp Control Loops for Driving Power PFETs • 2 HV Analog Sense Inputs • 4KB of Flash
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CY8C41123
CY8C41223
12-Bit
16-Bit
CY8C41223
TRAM
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Untitled
Abstract: No abstract text available
Text: GE Datasheet ESTW024A0A BARRACUDA* Series; DC-DC Converter Power Modules 36-75Vdc Input; 5Vdc, 24A, 120W Output Features • Compliant to RoHS II EU “Directive 2011/65/EU -Z versions • Compliant to REACH Directive (EC) No 1907/2006 Flat and high efficiency curve
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ESTW024A0A
36-75Vdc
2011/65/EU
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Untitled
Abstract: No abstract text available
Text: FDD1600N10ALZD BoostPak N-Channel PowerTrench MOSFET + Diode 100 V, 6.8 A, 160 mΩ Features Description • RDS(on) = 124 mΩ (Typ.) @ VGS = 10 V, ID = 3.4 A This N-Channel MOSFET is produced using Fairchild Semiconductor’s PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior
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FDD1600N10ALZD
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CY8C41123
Abstract: CY8C41223 power psoc
Text: CY8C41123 and CY8C41223 PRELIMINARY Linear Power PSoC Devices 1.0 Features 1.1 • • • • Key Features • Extended Operating Voltage of 2.5V to 36V • 2 HV Linear Opamp Control Loops for Driving Power PFETs • 2 HV Analog Sense Inputs • 4KB of Flash
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CY8C41123
CY8C41223
12-Bit
16-Bit
CY8C41223
power psoc
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