124OC Search Results
124OC Datasheets Context Search
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EVW020A0S6R041Z
Abstract: EVW020A0S6 ipc-9592 IEC60950-1 SR-332 VDE0805-1 EVW020A0S6R041-HZ 124oC EVW020A0S6R0
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EVW020A0S6R0 75Vdc 2002/95/EC 2002/95/EC IPC-9592, 48Vdc) Inp2-244-9428) DS09-010 evw020s6r0 EVW020A0S6R041Z EVW020A0S6 ipc-9592 IEC60950-1 SR-332 VDE0805-1 EVW020A0S6R041-HZ 124oC | |
HX8340B
Abstract: HX8340-B mx 362-0
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HX8340-B 176RGB 224October, 225October, HX8340B mx 362-0 | |
CY8C41123
Abstract: CY8C41223
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CY8C41123 CY8C41223 12-Bit 16-Bit CY8C41223 | |
heat resistorContextual Info: Data Sheet March 3, 2011 EVW020A0S6R0 Series Eighth-Brick DC-DC Converter Power Modules 36–75Vdc Input; 6.0Vdc Output; 20A Output Current Features • Compliant to RoHS EU Directive 2002/95/EC (-Z versions) • Compliant to ROHS EU Directive 2002/95/EC with |
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EVW020A0S6R0 75Vdc 2002/95/EC 2002/95/EC IPC-9592, 48Vdc) 72-244-WATT DS09-010 evw020s6r0 heat resistor | |
Contextual Info: FDD1600N10ALZD BoostPak N-Channel PowerTrench MOSFET + Diode 100 V, 6.8 A, 160 mΩ Features Description • RDS(on) = 124 mΩ ( Typ.)@ VGS = 10 V, ID = 3.4 A This N-Channel MOSFET is produced using Fairchild Semiconductor®’s PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching |
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FDD1600N10ALZD | |
HX8369
Abstract: S1129 Himax 23 PIN TFT MOBILE DISPLAY HX5186-A
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HX8369-A00-DS HX8369-A00 480RGB 285October, HX8369 S1129 Himax 23 PIN TFT MOBILE DISPLAY HX5186-A | |
Contextual Info: Data Sheet March 3, 2011 EVW020A0S6R0 Series Eighth-Brick DC-DC Converter Power Modules 36–75Vdc Input; 6.0Vdc Output; 20A Output Current Features • Compliant to RoHS EU Directive 2002/95/EC (-Z versions) • Compliant to ROHS EU Directive 2002/95/EC with |
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EVW020A0S6R0 75Vdc 2002/95/EC 2002/95/EC IPC-9592, 48Vdc) DS09-010 evw020s6r0 | |
Contextual Info: FDD1600N10ALZD BoostPak N-Channel PowerTrench MOSFET + Diode 100 V, 6.8 A, 160 m Features Description • RDS(on) = 124 m ( Typ.)@ VGS = 10 V, ID = 3.4 A This N-Channel MOSFET is produced using Fairchild Semiconductor®’s PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching |
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FDD1600N10ALZD | |
jedec MO229
Abstract: BUT14
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12-bit MO-229 JC-42 ADT7408 ADT7408CCPZ2-reel7 PR05716-0-8/05 jedec MO229 BUT14 | |
Contextual Info: LPRF Board API Reference Manual JN-RM-2003 Revision 2.2 17 December 2012 LPRF Board API Reference Manual 2 NXP Laboratories UK 2012 JN-RM-2003 v2.2 LPRF Board API Reference Manual Contents About this Manual 7 Organisation Conventions Acronyms and Abbreviations |
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JN-RM-2003 JN-RM-2003 u16ALSreadChannelResult u16HTSreadTempResult u16HTSreadHumidityResult | |
TRAMContextual Info: CY8C41123 and CY8C41223 PRELIMINARY Linear Power PSoC Devices 1.0 Features 1.1 • • • • Key Features • Extended Operating Voltage of 2.5V to 36V • 2 HV Linear Opamp Control Loops for Driving Power PFETs • 2 HV Analog Sense Inputs • 4KB of Flash |
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CY8C41123 CY8C41223 12-Bit 16-Bit CY8C41223 TRAM | |
Contextual Info: GE Datasheet ESTW024A0A BARRACUDA* Series; DC-DC Converter Power Modules 36-75Vdc Input; 5Vdc, 24A, 120W Output Features • Compliant to RoHS II EU “Directive 2011/65/EU -Z versions • Compliant to REACH Directive (EC) No 1907/2006 Flat and high efficiency curve |
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ESTW024A0A 36-75Vdc 2011/65/EU | |
Contextual Info: FDD1600N10ALZD BoostPak N-Channel PowerTrench MOSFET + Diode 100 V, 6.8 A, 160 mΩ Features Description • RDS(on) = 124 mΩ (Typ.) @ VGS = 10 V, ID = 3.4 A This N-Channel MOSFET is produced using Fairchild Semiconductor’s PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior |
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FDD1600N10ALZD | |
CY8C41123
Abstract: CY8C41223 power psoc
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CY8C41123 CY8C41223 12-Bit 16-Bit CY8C41223 power psoc | |
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