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    1265A Search Results

    1265A Result Highlights (2)

    Part ECAD Model Manufacturer Description Download Buy
    DC1265A-A Analog Devices LTC3220EPF - 360mA general pur Visit Analog Devices Buy
    DC1265A-B Analog Devices LTC3220EPF-1 - 360mA general p Visit Analog Devices Buy
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    1265A Price and Stock

    Bourns Inc SRP1265A-150M

    FIXED IND 15UH 9A 28 MOHM SMD
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    Mouser Electronics SRP1265A-150M 2,605
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    Newark SRP1265A-150M Cut Tape 142 1
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    Master Electronics SRP1265A-150M 1,926
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    Win Source Electronics SRP1265A-150M 32,935
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    Bourns Inc SRP1265A-4R7M

    FIXED IND 4.7UH 13.5A 8.4MOHM SM
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    SRP1265A-4R7M Cut Tape 136 1
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    Mouser Electronics SRP1265A-4R7M 5,331
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    Newark SRP1265A-4R7M Cut Tape 1,735 1
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    Bristol Electronics SRP1265A-4R7M 1,000 3
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    Avnet Abacus SRP1265A-4R7M Reel 33,500 17 Weeks 500
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    Win Source Electronics SRP1265A-4R7M 22,000
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    Bourns Inc SRP1265A-470M

    FIXED IND 47UH 6.5A 90 MOHM SMD
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    SRP1265A-470M Ammo Pack 1
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    Mouser Electronics SRP1265A-470M 3,344
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    Bourns Inc SRP1265A-R82M

    FIXED IND 820NH 33A 1.9 MOHM SMD
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    Bourns Inc SRP1265A-R15M

    FIXED IND 150NH 55A 0.6 MOHM SMD
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    DigiKey SRP1265A-R15M Reel 500 500
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    1265A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    800H

    Abstract: HN29V102414 HN29V102414T-50 Hitachi DSA0047
    Text: HN29V102414 Series 1G AND type Flash Memory More than 32,113-sector 542,581,248-bit x 2 ADE-203-1265A (Z) Preliminary Rev. 0.1 Jul. 25, 2001 Description The Hitachi HN29V102414 Series is a CMOS Flash Memory with AND type multi-level memory cells. It has fully automatic programming and erase capabilities with a single 3.0 V power supply. The functions are


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    PDF HN29V102414 113-sector 248-bit) ADE-203-1265A 800H HN29V102414T-50 Hitachi DSA0047

    1265a

    Abstract: DCH10 EN4707
    Text: Ordering number:EN4707 DCH10 Silicon Epitaxial Planar Type Twin Type, Anode Common High-Speed Rectifiers, High-Frequency Rectifiers Features Package Dimensions • Ideal for use in hybrid ICs because of small-sized package. unit:mm 1265A [DCH10] 1:Cathode


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    PDF EN4707 DCH10 DCH10] 1265a DCH10 EN4707

    CEE 32A plug

    Abstract: CEE 16 AMP PLUG 5608AA Mennekes 3658 STARTOP 33 1192ZA 5605aa 7011AA 5792A CEE 32A
    Text: Plugs for the world UK / IRL 2 International approvals. MENNEKES plugs and receptacles conform to relevant in other countries, in particular countries whose national and international standards. Plugs and national test marks are given below. Due to special


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    PDF D-57399 I-10090 D-09465 CEE 32A plug CEE 16 AMP PLUG 5608AA Mennekes 3658 STARTOP 33 1192ZA 5605aa 7011AA 5792A CEE 32A

    AT49BV8004

    Abstract: AT49BV8011 AT49BV8011T 8011T
    Text: Features • 2.7V to 3.6V Read/Write • Access Time - 90 ns • Sector Erase Architecture • • • • • • • • • • • – AT49BV8004 T Fourteen 32K Word (64K Byte) Sectors with Individual Write Lockout Two 16K Word (32K Byte) Sectors with Individual Write Lockout


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    PDF AT49BV8004 AT49BV8011 02/99/xM AT49BV8011T 8011T

    FERRITE BEAD 1000 OHM 0805

    Abstract: MW6S010NR1 A113 A114 A115 AN1955 C101 JESD22 MW6S010GNR1 CRCW12061001F100
    Text: Freescale Semiconductor Technical Data Document Number: MW6S010N Rev. 3, 5/2006 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFETs Designed for Class A or Class AB base station applications with frequencies up to 1500 MHz. Suitable for analog and digital modulation and multicarrier


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    PDF MW6S010N MW6S010NR1 MW6S010GNR1 FERRITE BEAD 1000 OHM 0805 A113 A114 A115 AN1955 C101 JESD22 MW6S010GNR1 CRCW12061001F100

    MHVIC910HR2

    Abstract: MW6S010NR1 CRCW12061001FKEA ATC700A331JT150XT 1265A ATC700a FREESCALE PACKING A113 A114 AN1955
    Text: Freescale Semiconductor Technical Data Document Number: MW6S010N Rev. 5, 6/2009 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for Class A or Class AB base station applications with frequencies up to 1500 MHz. Suitable for analog and digital modulation and multicarrier


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    PDF MW6S010N MW6S010NR1 MW6S010GNR1 MHVIC910HR2 CRCW12061001FKEA ATC700A331JT150XT 1265A ATC700a FREESCALE PACKING A113 A114 AN1955

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S27015N Rev. 2, 12/2008 RF Power Field Effect Transistors MRF6S27015NR1 MRF6S27015GNR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 2000 to


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    PDF MRF6S27015N MRF6S27015NR1 MRF6S27015GNR1 15yees, MRF6S27015NR1

    D260-4118-0000

    Abstract: MRFE6VS25L MRFE6VS25GNR1 transistor J128 2422D 21-201-J ATC100B2R7BT500XT crcw12065k60f avx c0805c103k5rac MRFE6VS25NR1
    Text: Freescale Semiconductor Technical Data Document Number: MRFE6VS25N Rev. 1, 12/2012 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs RF power transistors designed for both narrowband and broadband ISM, broadcast and aerospace applications operating at frequencies from 1.8 to


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    PDF MRFE6VS25N MRFE6VS25NR1 MRFE6VS25GNR1 MRFE6VS25N D260-4118-0000 MRFE6VS25L MRFE6VS25GNR1 transistor J128 2422D 21-201-J ATC100B2R7BT500XT crcw12065k60f avx c0805c103k5rac

    stripline directional couplers

    Abstract: MRFP36030 MRF5S9080NB NONLINEAR MODEL LDMOS MRF377HR5 Product Selector Guide MRF1511NT1 ESD MC13820 MRF377HR3 MRF6S9045NBR1
    Text: RF and IF Quarter 3, 2005 SG1009Q32005 Rev 0 What’s New! Market Product GSM/GPRS Cellular MMM6025 Cellular, GPS, ISM MC13820 TV Broadcast MRF377HR3, MRF377HR5 900 MHz Cellular Base Station MRF6S9045NR1, MRF6S9045NBR1, MRF6S9060NR1, MRF6S9060NBR1, MRF6S9125NR1, MRF6S9125NBR1, MRF6S9130HR3, MRF6S9130HSR3,


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    PDF SG1009Q32005 MMM6025 MC13820 MRF377HR3, MRF377HR5 MRF6S9045NR1, MRF6S9045NBR1, MRF6S9060NR1, MRF6S9060NBR1, MRF6S9125NR1, stripline directional couplers MRFP36030 MRF5S9080NB NONLINEAR MODEL LDMOS MRF377HR5 Product Selector Guide MRF1511NT1 ESD MC13820 MRF377HR3 MRF6S9045NBR1

    MW6S010NR1

    Abstract: A114 A115 AN1955 C101 JESD22 MW6S010 MW6S010GMR1 MW6S010GNR1 MW6S010MR1
    Text: Freescale Semiconductor Technical Data Document Number: MW6S010 Rev. 1, 5/2005 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFETs Designed for Class A or Class AB base station applications with frequencies up to 1500 MHz. Suitable for analog and digital modulation and multicarrier


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    PDF MW6S010 MW6S010NR1 MW6S010GNR1 MW6S010MR1 MW6S010GMR1 A114 A115 AN1955 C101 JESD22 MW6S010 MW6S010GMR1

    Untitled

    Abstract: No abstract text available
    Text: Document Number: MW6S010N Rev. 5, 6/2009 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for Class A or Class AB base station applications with frequencies up to 1500 MHz. Suitable for analog and digital modulation and multicarrier


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    PDF MW6S010N MW6S010NR1 MW6S010GNR1

    35d21

    Abstract: MRF6S20010GNR1 j3068 1990 1142 MRF6S20010N A113 ATC100B9R1BT500XT A115 AN1955 CDR33BX104AKYS
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S20010N Rev. 3, 6/2009 RF Power Field Effect Transistors MRF6S20010NR1 MRF6S20010GNR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for Class A or Class AB general purpose applications with


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    PDF MRF6S20010N MRF6S20010NR1 MRF6S20010GNR1 MRF6S20010NR1 35d21 MRF6S20010GNR1 j3068 1990 1142 MRF6S20010N A113 ATC100B9R1BT500XT A115 AN1955 CDR33BX104AKYS

    Untitled

    Abstract: No abstract text available
    Text: HIGH CURRENT SMT POWER INDUCTORS E & E Magnetic Products Limited 1265A Series Used in high power application Large permissible DC current Ideal for computers and portable power devices, DC-DC converters, energy storage applications and Input-Output filter applications


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    PDF RIS1265A RIS1265A-R47MF RIS1265A-R56MF RIS1265A-R68MF RIS1265A-R82MF RIS1265A-1R0MF RIS1265A-1ite: PI118

    power transistors table

    Abstract: MW6S010NR1 mrfe6s9060n MHW6342TN Motorola Microwave power Transistor "RF high power Amplifier" MRF6V2300N MRFG35010R1 MRF6P23190HR6 MRF373 PUSH PULL
    Text: RF Products Freescale Semiconductor Selector Guide SG46 Rev. 34 6/2008 RF Product Selector Guide Offering a broad portfolio of RF products, Freescale Semiconductor primarily serves the wireless infrastructure, wireless subscriber, general purpose amplifier, broadcast and industrial markets. Freescale pioneered RF technology and continues to be the leader in the field by providing the quality,


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    PDF

    t490d106k035at

    Abstract: j3068
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S20010N Rev. 2, 12/2008 RF Power Field Effect Transistors MRF6S20010NR1 MRF6S20010GNR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for Class A or Class AB general purpose applications with


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    PDF MRF6S20010N MRF6S20010NR1 MRF6S20010GNR1 t490d106k035at j3068

    MRF8P9040N

    Abstract: rf Amplifier mhz Doherty 470-860 MRF1513NT1 s2p MRF8S21100H MRF8S21100HS MRF8S9220HR3 AN1643 MRF6P23190H MRF8S9170NR3 MW6S004NT1
    Text: RF Products Freescale Semiconductor Selector Guide SG46 Rev. 35.1 5/2010 RF Product Selector Guide Freescale Semiconductor offers a comprehensive portfolio of RF products, primarily serving the cellular infrastructure, general purpose amplifier, broadcast, aerospace and industrial


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    PDF

    J2190

    Abstract: A113 A114 A115 AN1955 C101 CDR33BX104AKYS JESD22 MRF6S27015GNR1 MRF6S27015NR1
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S27015N Rev. 1, 6/2007 RF Power Field Effect Transistors MRF6S27015NR1 MRF6S27015GNR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 2000 to


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    PDF MRF6S27015N MRF6S27015NR1 MRF6S27015GNR1 MRF6S27015NR1 J2190 A113 A114 A115 AN1955 C101 CDR33BX104AKYS JESD22 MRF6S27015GNR1

    SAL 41B

    Abstract: 2SD1265 2SD12 2SD1265A 2SD1265 Q
    Text: P o w er T ra n s is to rs 2SD12Ó5, 1265A 2S D 1265, 2S D 1265A Silicon N PN Triple-Diffused Junction Type P a c k a g e D im e n s io n s P o w e r A m p lifie r U ni t ! mm • F e a tu re s • Wide area of safety operation ASO • “Full Pack” package for simplified m ounting on a heat sink with one


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    PDF 2SD12Ã 2SD1265A 2SD1265, 2SD1265 SAL 41B 2SD12 2SD1265A 2SD1265 Q

    D2375

    Abstract: D1259A d1267a D1265A transistor 2SA1949 2sd2328a TRANSISTORS SELECTION GUIDE D1261A C3795 2SB1526
    Text: Transistors Selection Guide by Packages • SS-Mini Type, SS-Mini Flat-Lead Packages (D1) c e o (V) lc ( m A ) \ \ V 15 10 (* 6V) 20 *A 2SC 5363 30 80 40 2SA1806 2SC4809 2SC5295 (65mA) 2SC4808 2SD2345 150 f 2SA1791 ! 2SC4656 185 I 2SB1463 I 2SD2240 2SD2240A


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    PDF 125mW 2SC4627 2SC5021 2SA1790 2SC4626 2SC4655 2SC4809 2SC5295 2SC4808 2SA1806 D2375 D1259A d1267a D1265A transistor 2SA1949 2sd2328a TRANSISTORS SELECTION GUIDE D1261A C3795 2SB1526

    1265A

    Abstract: DCH10
    Text: Ordering num ber: E N 4707 DCH10 No.4707 Silicon Epitaxial P lanar Type Twin Type, Anode Common High-Speed Rectifiers, H igh-Frequency Rectifiers F eatu res •Ideal for use in hybrid ICs because of small-sized package. A b s o lu te M a x im u m R a tin g s at Ta = 25°C


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    PDF DCH10 1265A DCH10

    2SC144

    Abstract: 2SD466 2sc5266
    Text: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *


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    PDF T258-OMI FAX06 2SC144 2SD466 2sc5266

    Untitled

    Abstract: No abstract text available
    Text: Features • 2.7V to 3.6V Read/Write • Access Tim e - 90 ns • Sector Erase Architecture - AT49BV8004 T Fourteen 32K Word (64K Byte) Sectors with Individual W rite Lockout Two 16K Word (32K Byte) Sectors with Individual W rite Lockout Eight 4K Word (8K Byte) Sectors with Individual W rite Lockout


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    PDF AT49BV8004 AT49BV8011 AT49BV8004n 48-ball, 48-lead, O-142

    D1276A

    Abstract: B1419 d638 transistor b1361 ic 1271a D1273 D1985A B947A B1178 1985A
    Text: Transistors Selèction Guide by Packages I SS Mini Type Packages (D1 ) \ Vceo(V) lc(mA) pc= i25mw 10 15 2SC4609 2SA1806 20 2SC4627 A 2SC5021 í 2SA1790 ' 2SC4626 2SC4655 15 30 50 80 100 , Preliminary 2SC4808 40 50 150 2SD2345 12SA1791 I 2SC4656 í 2SB1463


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    PDF 2SC4609 2SC4808 2SA1806 2SC4627 2SA1790 2SC4626 2SC4655 2SD2345 2SC46 12SA1 D1276A B1419 d638 transistor b1361 ic 1271a D1273 D1985A B947A B1178 1985A

    chip 8-pin T592

    Abstract: BYS24 81c61 ADS TS20 t592 POWER COMMAND HM 1211 TL04 G4 200ds power generation POWER COMMAND HM 1211 i.c t244
    Text: 82C614 DATA BOOK September 1990 Revision 1.6 CHIPS AND TECHNOLOGIES, INC. 3050 ZANKER ROAD SAN JOSE, CA 95134 408 434-0600 A aO'iôllb DDD'îSGG 30 ^ PRELIMINARY 82C614 D ata Sheet COPYRIGHT NOTICE Copyright @ 1990, Chips and Technologies, Inc. ALL RIGHTS RESERVED.


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    PDF 82C614 0X124 MFG40001 160SPFP-01 chip 8-pin T592 BYS24 81c61 ADS TS20 t592 POWER COMMAND HM 1211 TL04 G4 200ds power generation POWER COMMAND HM 1211 i.c t244