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    Bourns Inc SRP1265A-2R2M

    FIXED IND 2.2UH 22A 4.2 MOHM SMD
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    DigiKey SRP1265A-2R2M Reel 51,000 500
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    Avnet Americas SRP1265A-2R2M Ammo Pack 17 Weeks, 3 Days 1
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    SRP1265A-2R2M Reel 14 Weeks 500
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    Mouser Electronics SRP1265A-2R2M 7,238
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    Newark SRP1265A-2R2M Cut Tape 81 1
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    RS SRP1265A-2R2M Bulk 17 Weeks 500
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    TTI SRP1265A-2R2M Reel 7,000 500
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    Avnet Abacus SRP1265A-2R2M Reel 3,000 17 Weeks 500
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    Chip-Germany GmbH SRP1265A-2R2M 10,176
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    Master Electronics SRP1265A-2R2M 6,000
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    New Advantage Corporation SRP1265A-2R2M 9,000 1
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    Bourns Inc SRP1265A-6R8M

    FIXED IND 6.8UH 11.5A 11.5 MOHM
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    DigiKey SRP1265A-6R8M Reel 8,000 500
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    Avnet Americas SRP1265A-6R8M Reel 14 Weeks 500
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    Newark SRP1265A-6R8M Cut Tape 746 1
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    RS SRP1265A-6R8M Bulk 492 18 Weeks 1
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    Bristol Electronics SRP1265A-6R8M 2,069 3
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    TTI SRP1265A-6R8M Reel 2,500 500
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    Avnet Abacus SRP1265A-6R8M Reel 17 Weeks 500
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    Chip One Stop SRP1265A-6R8M Cut Tape 343
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    Master Electronics SRP1265A-6R8M 1,693
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    Bourns Inc SRP1265A-330M

    FIXED IND 33UH 8A 58 MOHM SMD
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    DigiKey SRP1265A-330M Cut Tape 3,061 1
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    SRP1265A-330M Digi-Reel 3,061 1
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    SRP1265A-330M Reel 3,000 500
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    Avnet Americas SRP1265A-330M Reel 14 Weeks 500
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    Mouser Electronics SRP1265A-330M 15,909
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    Newark SRP1265A-330M Cut Tape 620 1
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    Bristol Electronics SRP1265A-330M 49 3
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    TTI SRP1265A-330M Reel 59,500 500
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    SRP1265A-330M Cut Tape 1,160 10
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    Avnet Abacus SRP1265A-330M Reel 500 17 Weeks 500
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    Chip One Stop SRP1265A-330M Cut Tape 488
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    SRP1265A-330M Cut Tape 120
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    Master Electronics SRP1265A-330M 9,100
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    Win Source Electronics SRP1265A-330M 8,500
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    Bourns Inc SRP1265A-R56M

    FIXED IND 560NH 37A 1.2 MOHM SMD
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    DigiKey SRP1265A-R56M Reel 500 500
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    Avnet Americas SRP1265A-R56M Reel 500
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    Bristol Electronics SRP1265A-R56M 500
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    SRP1265A-R56M 312 5
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    Avnet Abacus SRP1265A-R56M Reel 17 Weeks 500
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    Master Electronics SRP1265A-R56M
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    New Advantage Corporation SRP1265A-R56M 17,500 1
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    Shenzhen Kedajia Electronics Co Ltd CSAB1265A-470M

    SMD MOLDING POWER CHOKE
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    DigiKey CSAB1265A-470M Reel 400 400
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    CSAB1265A-470M Cut Tape 400 1
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    CSAB1265A-470M Digi-Reel 400 1
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    NAC CSAB1265A-470M
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    1265A Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    800H

    Abstract: HN29V102414 HN29V102414T-50 Hitachi DSA0047
    Text: HN29V102414 Series 1G AND type Flash Memory More than 32,113-sector 542,581,248-bit x 2 ADE-203-1265A (Z) Preliminary Rev. 0.1 Jul. 25, 2001 Description The Hitachi HN29V102414 Series is a CMOS Flash Memory with AND type multi-level memory cells. It has fully automatic programming and erase capabilities with a single 3.0 V power supply. The functions are


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    HN29V102414 113-sector 248-bit) ADE-203-1265A 800H HN29V102414T-50 Hitachi DSA0047 PDF

    1265a

    Abstract: DCH10 EN4707
    Text: Ordering number:EN4707 DCH10 Silicon Epitaxial Planar Type Twin Type, Anode Common High-Speed Rectifiers, High-Frequency Rectifiers Features Package Dimensions • Ideal for use in hybrid ICs because of small-sized package. unit:mm 1265A [DCH10] 1:Cathode


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    EN4707 DCH10 DCH10] 1265a DCH10 EN4707 PDF

    CEE 32A plug

    Abstract: CEE 16 AMP PLUG 5608AA Mennekes 3658 STARTOP 33 1192ZA 5605aa 7011AA 5792A CEE 32A
    Text: Plugs for the world UK / IRL 2 International approvals. MENNEKES plugs and receptacles conform to relevant in other countries, in particular countries whose national and international standards. Plugs and national test marks are given below. Due to special


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    D-57399 I-10090 D-09465 CEE 32A plug CEE 16 AMP PLUG 5608AA Mennekes 3658 STARTOP 33 1192ZA 5605aa 7011AA 5792A CEE 32A PDF

    AT49BV8004

    Abstract: AT49BV8011 AT49BV8011T 8011T
    Text: Features • 2.7V to 3.6V Read/Write • Access Time - 90 ns • Sector Erase Architecture • • • • • • • • • • • – AT49BV8004 T Fourteen 32K Word (64K Byte) Sectors with Individual Write Lockout Two 16K Word (32K Byte) Sectors with Individual Write Lockout


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    AT49BV8004 AT49BV8011 02/99/xM AT49BV8011T 8011T PDF

    FERRITE BEAD 1000 OHM 0805

    Abstract: MW6S010NR1 A113 A114 A115 AN1955 C101 JESD22 MW6S010GNR1 CRCW12061001F100
    Text: Freescale Semiconductor Technical Data Document Number: MW6S010N Rev. 3, 5/2006 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFETs Designed for Class A or Class AB base station applications with frequencies up to 1500 MHz. Suitable for analog and digital modulation and multicarrier


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    MW6S010N MW6S010NR1 MW6S010GNR1 FERRITE BEAD 1000 OHM 0805 A113 A114 A115 AN1955 C101 JESD22 MW6S010GNR1 CRCW12061001F100 PDF

    MHVIC910HR2

    Abstract: MW6S010NR1 CRCW12061001FKEA ATC700A331JT150XT 1265A ATC700a FREESCALE PACKING A113 A114 AN1955
    Text: Freescale Semiconductor Technical Data Document Number: MW6S010N Rev. 5, 6/2009 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for Class A or Class AB base station applications with frequencies up to 1500 MHz. Suitable for analog and digital modulation and multicarrier


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    MW6S010N MW6S010NR1 MW6S010GNR1 MHVIC910HR2 CRCW12061001FKEA ATC700A331JT150XT 1265A ATC700a FREESCALE PACKING A113 A114 AN1955 PDF

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S27015N Rev. 2, 12/2008 RF Power Field Effect Transistors MRF6S27015NR1 MRF6S27015GNR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 2000 to


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    MRF6S27015N MRF6S27015NR1 MRF6S27015GNR1 15yees, MRF6S27015NR1 PDF

    D260-4118-0000

    Abstract: MRFE6VS25L MRFE6VS25GNR1 transistor J128 2422D 21-201-J ATC100B2R7BT500XT crcw12065k60f avx c0805c103k5rac MRFE6VS25NR1
    Text: Freescale Semiconductor Technical Data Document Number: MRFE6VS25N Rev. 1, 12/2012 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs RF power transistors designed for both narrowband and broadband ISM, broadcast and aerospace applications operating at frequencies from 1.8 to


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    MRFE6VS25N MRFE6VS25NR1 MRFE6VS25GNR1 MRFE6VS25N D260-4118-0000 MRFE6VS25L MRFE6VS25GNR1 transistor J128 2422D 21-201-J ATC100B2R7BT500XT crcw12065k60f avx c0805c103k5rac PDF

    stripline directional couplers

    Abstract: MRFP36030 MRF5S9080NB NONLINEAR MODEL LDMOS MRF377HR5 Product Selector Guide MRF1511NT1 ESD MC13820 MRF377HR3 MRF6S9045NBR1
    Text: RF and IF Quarter 3, 2005 SG1009Q32005 Rev 0 What’s New! Market Product GSM/GPRS Cellular MMM6025 Cellular, GPS, ISM MC13820 TV Broadcast MRF377HR3, MRF377HR5 900 MHz Cellular Base Station MRF6S9045NR1, MRF6S9045NBR1, MRF6S9060NR1, MRF6S9060NBR1, MRF6S9125NR1, MRF6S9125NBR1, MRF6S9130HR3, MRF6S9130HSR3,


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    SG1009Q32005 MMM6025 MC13820 MRF377HR3, MRF377HR5 MRF6S9045NR1, MRF6S9045NBR1, MRF6S9060NR1, MRF6S9060NBR1, MRF6S9125NR1, stripline directional couplers MRFP36030 MRF5S9080NB NONLINEAR MODEL LDMOS MRF377HR5 Product Selector Guide MRF1511NT1 ESD MC13820 MRF377HR3 MRF6S9045NBR1 PDF

    MW6S010NR1

    Abstract: A114 A115 AN1955 C101 JESD22 MW6S010 MW6S010GMR1 MW6S010GNR1 MW6S010MR1
    Text: Freescale Semiconductor Technical Data Document Number: MW6S010 Rev. 1, 5/2005 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFETs Designed for Class A or Class AB base station applications with frequencies up to 1500 MHz. Suitable for analog and digital modulation and multicarrier


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    MW6S010 MW6S010NR1 MW6S010GNR1 MW6S010MR1 MW6S010GMR1 A114 A115 AN1955 C101 JESD22 MW6S010 MW6S010GMR1 PDF

    Untitled

    Abstract: No abstract text available
    Text: Document Number: MW6S010N Rev. 5, 6/2009 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for Class A or Class AB base station applications with frequencies up to 1500 MHz. Suitable for analog and digital modulation and multicarrier


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    MW6S010N MW6S010NR1 MW6S010GNR1 PDF

    35d21

    Abstract: MRF6S20010GNR1 j3068 1990 1142 MRF6S20010N A113 ATC100B9R1BT500XT A115 AN1955 CDR33BX104AKYS
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S20010N Rev. 3, 6/2009 RF Power Field Effect Transistors MRF6S20010NR1 MRF6S20010GNR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for Class A or Class AB general purpose applications with


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    MRF6S20010N MRF6S20010NR1 MRF6S20010GNR1 MRF6S20010NR1 35d21 MRF6S20010GNR1 j3068 1990 1142 MRF6S20010N A113 ATC100B9R1BT500XT A115 AN1955 CDR33BX104AKYS PDF

    Untitled

    Abstract: No abstract text available
    Text: HIGH CURRENT SMT POWER INDUCTORS E & E Magnetic Products Limited 1265A Series Used in high power application Large permissible DC current Ideal for computers and portable power devices, DC-DC converters, energy storage applications and Input-Output filter applications


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    RIS1265A RIS1265A-R47MF RIS1265A-R56MF RIS1265A-R68MF RIS1265A-R82MF RIS1265A-1R0MF RIS1265A-1ite: PI118 PDF

    power transistors table

    Abstract: MW6S010NR1 mrfe6s9060n MHW6342TN Motorola Microwave power Transistor "RF high power Amplifier" MRF6V2300N MRFG35010R1 MRF6P23190HR6 MRF373 PUSH PULL
    Text: RF Products Freescale Semiconductor Selector Guide SG46 Rev. 34 6/2008 RF Product Selector Guide Offering a broad portfolio of RF products, Freescale Semiconductor primarily serves the wireless infrastructure, wireless subscriber, general purpose amplifier, broadcast and industrial markets. Freescale pioneered RF technology and continues to be the leader in the field by providing the quality,


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    PDF

    t490d106k035at

    Abstract: j3068
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S20010N Rev. 2, 12/2008 RF Power Field Effect Transistors MRF6S20010NR1 MRF6S20010GNR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for Class A or Class AB general purpose applications with


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    MRF6S20010N MRF6S20010NR1 MRF6S20010GNR1 t490d106k035at j3068 PDF

    MRF8P9040N

    Abstract: rf Amplifier mhz Doherty 470-860 MRF1513NT1 s2p MRF8S21100H MRF8S21100HS MRF8S9220HR3 AN1643 MRF6P23190H MRF8S9170NR3 MW6S004NT1
    Text: RF Products Freescale Semiconductor Selector Guide SG46 Rev. 35.1 5/2010 RF Product Selector Guide Freescale Semiconductor offers a comprehensive portfolio of RF products, primarily serving the cellular infrastructure, general purpose amplifier, broadcast, aerospace and industrial


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    PDF

    J2190

    Abstract: A113 A114 A115 AN1955 C101 CDR33BX104AKYS JESD22 MRF6S27015GNR1 MRF6S27015NR1
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S27015N Rev. 1, 6/2007 RF Power Field Effect Transistors MRF6S27015NR1 MRF6S27015GNR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 2000 to


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    MRF6S27015N MRF6S27015NR1 MRF6S27015GNR1 MRF6S27015NR1 J2190 A113 A114 A115 AN1955 C101 CDR33BX104AKYS JESD22 MRF6S27015GNR1 PDF

    SAL 41B

    Abstract: 2SD1265 2SD12 2SD1265A 2SD1265 Q
    Text: P o w er T ra n s is to rs 2SD12Ó5, 1265A 2S D 1265, 2S D 1265A Silicon N PN Triple-Diffused Junction Type P a c k a g e D im e n s io n s P o w e r A m p lifie r U ni t ! mm • F e a tu re s • Wide area of safety operation ASO • “Full Pack” package for simplified m ounting on a heat sink with one


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    2SD12Ã 2SD1265A 2SD1265, 2SD1265 SAL 41B 2SD12 2SD1265A 2SD1265 Q PDF

    D2375

    Abstract: D1259A d1267a D1265A transistor 2SA1949 2sd2328a TRANSISTORS SELECTION GUIDE D1261A C3795 2SB1526
    Text: Transistors Selection Guide by Packages • SS-Mini Type, SS-Mini Flat-Lead Packages (D1) c e o (V) lc ( m A ) \ \ V 15 10 (* 6V) 20 *A 2SC 5363 30 80 40 2SA1806 2SC4809 2SC5295 (65mA) 2SC4808 2SD2345 150 f 2SA1791 ! 2SC4656 185 I 2SB1463 I 2SD2240 2SD2240A


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    125mW 2SC4627 2SC5021 2SA1790 2SC4626 2SC4655 2SC4809 2SC5295 2SC4808 2SA1806 D2375 D1259A d1267a D1265A transistor 2SA1949 2sd2328a TRANSISTORS SELECTION GUIDE D1261A C3795 2SB1526 PDF

    1265A

    Abstract: DCH10
    Text: Ordering num ber: E N 4707 DCH10 No.4707 Silicon Epitaxial P lanar Type Twin Type, Anode Common High-Speed Rectifiers, H igh-Frequency Rectifiers F eatu res •Ideal for use in hybrid ICs because of small-sized package. A b s o lu te M a x im u m R a tin g s at Ta = 25°C


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    DCH10 1265A DCH10 PDF

    2SC144

    Abstract: 2SD466 2sc5266
    Text: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *


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    T258-OMI FAX06 2SC144 2SD466 2sc5266 PDF

    Untitled

    Abstract: No abstract text available
    Text: Features • 2.7V to 3.6V Read/Write • Access Tim e - 90 ns • Sector Erase Architecture - AT49BV8004 T Fourteen 32K Word (64K Byte) Sectors with Individual W rite Lockout Two 16K Word (32K Byte) Sectors with Individual W rite Lockout Eight 4K Word (8K Byte) Sectors with Individual W rite Lockout


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    AT49BV8004 AT49BV8011 AT49BV8004n 48-ball, 48-lead, O-142 PDF

    D1276A

    Abstract: B1419 d638 transistor b1361 ic 1271a D1273 D1985A B947A B1178 1985A
    Text: Transistors Selèction Guide by Packages I SS Mini Type Packages (D1 ) \ Vceo(V) lc(mA) pc= i25mw 10 15 2SC4609 2SA1806 20 2SC4627 A 2SC5021 í 2SA1790 ' 2SC4626 2SC4655 15 30 50 80 100 , Preliminary 2SC4808 40 50 150 2SD2345 12SA1791 I 2SC4656 í 2SB1463


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    2SC4609 2SC4808 2SA1806 2SC4627 2SA1790 2SC4626 2SC4655 2SD2345 2SC46 12SA1 D1276A B1419 d638 transistor b1361 ic 1271a D1273 D1985A B947A B1178 1985A PDF

    chip 8-pin T592

    Abstract: BYS24 81c61 ADS TS20 t592 POWER COMMAND HM 1211 TL04 G4 200ds power generation POWER COMMAND HM 1211 i.c t244
    Text: 82C614 DATA BOOK September 1990 Revision 1.6 CHIPS AND TECHNOLOGIES, INC. 3050 ZANKER ROAD SAN JOSE, CA 95134 408 434-0600 A aO'iôllb DDD'îSGG 30 ^ PRELIMINARY 82C614 D ata Sheet COPYRIGHT NOTICE Copyright @ 1990, Chips and Technologies, Inc. ALL RIGHTS RESERVED.


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    82C614 0X124 MFG40001 160SPFP-01 chip 8-pin T592 BYS24 81c61 ADS TS20 t592 POWER COMMAND HM 1211 TL04 G4 200ds power generation POWER COMMAND HM 1211 i.c t244 PDF